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1. 发明申请

US20110147733A1 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件结构及其制造方法
公开(公告)号：US20110147733A1
公开(公告)日：2011-06-23
申请号：US12776484
申请日：2010-05-10
申请人： Yih-Chyun KAO , Chun-Nan Lin , Li-Kai Chen , Wen-Ching Tsai
发明人： Yih-Chyun KAO , Chun-Nan Lin , Li-Kai Chen , Wen-Ching Tsai
IPC分类号： H01L29/786 , H01L29/12 , H01L21/34
CPC分类号： H01L29/7869
摘要： A semiconductor device structure on a substrate and a manufacture method thereof is provided. The semiconductor device structure includes an oxide semiconductor transistor and a passivation layer containing free hydrogen. The semiconductor device structure is formed by following steps. A gate electrode is formed on the substrate. A gate dielectric layer covers the gate electrode. A source electrode is formed on the gate dielectric layer. A drain electrode is formed on the gate dielectric layer and separated from the source electrode and thereby forming a channel distance. An oxide semiconductor layer is formed on the gate dielectric layer, the source electrode and the drain electrode and between the source electrode and the drain electrode. The oxide semiconductor layer is further electrically connected with the source electrode and the drain electrode. A passivation layer covers the oxide semiconductor layer, the source electrode and the drain electrode. The passivation layer has a groove formed therein, and the groove surrounds the oxide semiconductor layer.
摘要翻译：提供了一种基板上的半导体器件结构及其制造方法。半导体器件结构包括氧化物半导体晶体管和含有游离氢的钝化层。半导体器件结构通过以下步骤形成。在基板上形成栅电极。栅介质层覆盖栅电极。源极电极形成在栅极电介质层上。在栅极电介质层上形成漏电极，与源电极分离，形成通道距离。在栅极电介质层，源电极和漏电极以及源电极和漏电极之间形成氧化物半导体层。氧化物半导体层进一步与源电极和漏电极电连接。钝化层覆盖氧化物半导体层，源电极和漏电极。钝化层在其中形成有凹槽，并且沟槽围绕氧化物半导体层。

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