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1. 发明申请

US20090298241A1 METHOD OF FABRICATING VERTICAL THIN FILM TRANSISTOR 有权
标题翻译：制造垂直薄膜晶体管的方法
公开(公告)号：US20090298241A1
公开(公告)日：2009-12-03
申请号：US12536492
申请日：2009-08-06
申请人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L21/336
CPC分类号： H01L51/057 , Y10S438/944 , Y10S438/951
摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.
摘要翻译：公开了制造垂直薄膜晶体管（垂直TFT）的方法，其中使用荫罩来制造垂直结构的TFT器件。首先，形成用作肋和栅极层的金属层。接下来，在栅极层上设置荫罩。之后，将荫罩用作掩模以形成源极层，有机半导体层和漏极层。因此，该过程被简化。由于不需要光刻工艺，因此避免了有机半导体层的损坏，并且可以获得具有所需电特性的垂直TFT。

2. 发明授权

US07588971B2 Method of fabricating vertical thin film transistor 有权
公开(公告)号：US07588971B2
公开(公告)日：2009-09-15
申请号：US11778668
申请日：2007-07-17
申请人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L29/786 , H01L21/84
CPC分类号： H01L51/057 , Y10S438/944 , Y10S438/951
摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

3. 发明授权

US07638374B2 Method of fabricating vertical thin film transistor 有权
标题翻译：制造垂直薄膜晶体管的方法
公开(公告)号：US07638374B2
公开(公告)日：2009-12-29
申请号：US12536492
申请日：2009-08-06
申请人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L21/84 , H01L21/786
CPC分类号： H01L51/057 , Y10S438/944 , Y10S438/951
摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.
摘要翻译：公开了制造垂直薄膜晶体管（垂直TFT）的方法，其中使用荫罩来制造垂直结构的TFT器件。首先，形成用作肋和栅极层的金属层。接下来，在栅极层上设置荫罩。之后，将荫罩用作掩模以形成源极层，有机半导体层和漏极层。因此，该过程被简化。由于不需要光刻工艺，因此避免了有机半导体层的损坏，并且可以获得具有所需电特性的垂直TFT。

4. 发明申请

US20080014686A1 METHOD OF FABRICATING VERTICAL THIN FILM TRANSISTOR 有权
标题翻译：制造垂直薄膜晶体管的方法
公开(公告)号：US20080014686A1
公开(公告)日：2008-01-17
申请号：US11778668
申请日：2007-07-17
申请人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Tsung-Hsien Lin , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L51/057 , Y10S438/944 , Y10S438/951
摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.
摘要翻译：公开了制造垂直薄膜晶体管（垂直TFT）的方法，其中使用荫罩来制造垂直结构的TFT器件。首先，形成用作肋和栅极层的金属层。接下来，在栅极层上设置荫罩。之后，将荫罩用作掩模以形成源极层，有机半导体层和漏极层。因此，该过程被简化。由于不需要光刻工艺，因此避免了有机半导体层的损坏，并且可以获得具有所需电特性的垂直TFT。

5. 发明授权

US07851800B2 Thin film transistor and organic electro-luminescent display device 有权
标题翻译：薄膜晶体管和有机电致发光显示装置
公开(公告)号：US07851800B2
公开(公告)日：2010-12-14
申请号：US12345666
申请日：2008-12-30
申请人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
发明人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
IPC分类号： H01L31/00
CPC分类号： H01L27/3262 , H01L51/524 , H01L51/5253 , H01L51/5259 , H01L2227/323 , Y10T428/24802
摘要： A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.
摘要翻译：提供TFT和OLED装置。 TFT包括衬底，栅极，栅极绝缘体，源极/漏极层，隔离层和沟道层。栅极设置在基板上。栅极绝缘体设置在基板上并覆盖栅极。源极/漏极层设置在栅极绝缘体上，并且将栅极绝缘体的一部分暴露在栅极上方。隔离层设置在源极/漏极层上并且具有用于暴露栅极绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。沟道层设置在隔离层的开口中。此外，沟道层由开口露出并且电连接到源极/漏极层。另一方面，OLED器件主要包括驱动电路和有机电致发光单元。

6. 发明申请

US20070160813A1 THIN FILM TRANSISTOR, ORGANIC ELECTRO-LUMINESCENT DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管，有机电致发光显示装置及其制造方法
公开(公告)号：US20070160813A1
公开(公告)日：2007-07-12
申请号：US11309735
申请日：2006-09-19
申请人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
发明人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
IPC分类号： G03G7/00
CPC分类号： H01L27/3262 , H01L51/524 , H01L51/5253 , H01L51/5259 , H01L2227/323 , Y10T428/24802
摘要： A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.
摘要翻译：提供一种制造薄膜晶体管的方法。栅极形成在基板上。在基板上形成栅极绝缘体以覆盖栅极。源极/漏极层形成在栅极绝缘体上，并且栅极上方的栅极绝缘体的一部分被源极/漏极层暴露。在源极/漏极层上形成隔离层，并且具有用于暴露栅绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。沟道层形成在隔离层的开口中，以电连接到源极/漏极层，沟道层被开口暴露。

7. 发明申请

US20090102375A1 THIN FILM TRANSISTOR AND ORGANIC ELECTRO-LUMINESCENT DISPLAY DEVICE 有权
标题翻译：薄膜晶体管和有机电致发光显示器件
公开(公告)号：US20090102375A1
公开(公告)日：2009-04-23
申请号：US12345666
申请日：2008-12-30
申请人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
发明人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
IPC分类号： H01L29/08 , H01L29/00 , H01J1/62
CPC分类号： H01L27/3262 , H01L51/524 , H01L51/5253 , H01L51/5259 , H01L2227/323 , Y10T428/24802
摘要： A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.
摘要翻译：提供TFT和OLED装置。 TFT包括衬底，栅极，栅极绝缘体，源极/漏极层，隔离层和沟道层。栅极设置在基板上。栅极绝缘体设置在基板上并覆盖栅极。源极/漏极层设置在栅极绝缘体上，并且将栅极绝缘体的一部分暴露在栅极上方。隔离层设置在源极/漏极层上，并且具有用于暴露栅极绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。沟道层设置在隔离层的开口中。此外，沟道层由开口露出并且电连接到源极/漏极层。另一方面，OLED器件主要包括驱动电路和有机电致发光单元。

8. 发明授权

US07741163B2 Method of fabricating thin film transistor and organic electro-luminescent display device 有权
标题翻译：制造薄膜晶体管和有机电致发光显示装置的方法
公开(公告)号：US07741163B2
公开(公告)日：2010-06-22
申请号：US11309735
申请日：2006-09-19
申请人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
发明人： Tarng-Shiang Hu , Yi-Kai Wang , Jing-Yi Yan , Tsung-Hsien Lin , Jia-Chong Ho
IPC分类号： H01L21/00
CPC分类号： H01L27/3262 , H01L51/524 , H01L51/5253 , H01L51/5259 , H01L2227/323 , Y10T428/24802
摘要： A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.
摘要翻译：提供一种制造薄膜晶体管的方法。栅极形成在基板上。在基板上形成栅极绝缘体以覆盖栅极。源极/漏极层形成在栅极绝缘体上，并且栅极上方的栅极绝缘体的一部分被源极/漏极层暴露。在源极/漏极层上形成隔离层，并且具有用于暴露栅极绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。沟道层形成在隔离层的开口中，以电连接到源极/漏极层，沟道层被开口暴露。

9. 发明授权

US07834357B2 Structure of thin film transistor 有权
标题翻译：薄膜晶体管的结构
公开(公告)号：US07834357B2
公开(公告)日：2010-11-16
申请号：US11871153
申请日：2007-10-11
申请人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L29/786
CPC分类号： H01L51/102 , H01L27/283 , H01L51/0023 , H01L51/0545
摘要： A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.
摘要翻译：提供了薄膜晶体管（TFT）的结构。衬底具有彼此相对的第一表面和第二表面，其中第一表面具有图案化掩模层。图案化的第一电极层设置在基板的第二表面上，并且具有栅极部分和电容器电极部分。图案化的第二电极层设置在衬底的第二表面上并且具有源极和漏极，其中图案化的第二电极层与图案化的第一电极层自对准，通过将图案化的第一表面暴露于衬底的第一表面掩模层作为掩模。在图案化的第一电极层和图案化的第二电极层之间设置绝缘层。

10. 发明申请

US20080099843A1 STRUCTURE OF THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管结构
公开(公告)号：US20080099843A1
公开(公告)日：2008-05-01
申请号：US11871153
申请日：2007-10-11
申请人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L27/12
CPC分类号： H01L51/102 , H01L27/283 , H01L51/0023 , H01L51/0545
摘要： A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.
摘要翻译：提供了薄膜晶体管（TFT）的结构。衬底具有彼此相对的第一表面和第二表面，其中第一表面具有图案化掩模层。图案化的第一电极层设置在基板的第二表面上，并且具有栅极部分和电容器电极部分。图案化的第二电极层设置在衬底的第二表面上并且具有源极和漏极，其中图案化的第二电极层与图案化的第一电极层自对准，通过将图案化的第一表面暴露于衬底的第一表面掩模层作为掩模。在图案化的第一电极层和图案化的第二电极层之间设置绝缘层。

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