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1. 发明授权

US07834357B2 Structure of thin film transistor 有权
标题翻译：薄膜晶体管的结构
公开(公告)号：US07834357B2
公开(公告)日：2010-11-16
申请号：US11871153
申请日：2007-10-11
申请人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L29/786
CPC分类号： H01L51/102 , H01L27/283 , H01L51/0023 , H01L51/0545
摘要： A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.
摘要翻译：提供了薄膜晶体管（TFT）的结构。衬底具有彼此相对的第一表面和第二表面，其中第一表面具有图案化掩模层。图案化的第一电极层设置在基板的第二表面上，并且具有栅极部分和电容器电极部分。图案化的第二电极层设置在衬底的第二表面上并且具有源极和漏极，其中图案化的第二电极层与图案化的第一电极层自对准，通过将图案化的第一表面暴露于衬底的第一表面掩模层作为掩模。在图案化的第一电极层和图案化的第二电极层之间设置绝缘层。

2. 发明申请

US20080099843A1 STRUCTURE OF THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管结构
公开(公告)号：US20080099843A1
公开(公告)日：2008-05-01
申请号：US11871153
申请日：2007-10-11
申请人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L27/12
CPC分类号： H01L51/102 , H01L27/283 , H01L51/0023 , H01L51/0545
摘要： A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.
摘要翻译：提供了薄膜晶体管（TFT）的结构。衬底具有彼此相对的第一表面和第二表面，其中第一表面具有图案化掩模层。图案化的第一电极层设置在基板的第二表面上，并且具有栅极部分和电容器电极部分。图案化的第二电极层设置在衬底的第二表面上并且具有源极和漏极，其中图案化的第二电极层与图案化的第一电极层自对准，通过将图案化的第一表面暴露于衬底的第一表面掩模层作为掩模。在图案化的第一电极层和图案化的第二电极层之间设置绝缘层。

3. 发明申请

US20080102567A1 METHOD FOR MAKING THIN FILM TRANSISTOR 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20080102567A1
公开(公告)日：2008-05-01
申请号：US11871155
申请日：2007-10-11
申请人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L21/84 , H01L21/336
CPC分类号： H01L51/102 , H01L27/283 , H01L51/0023 , H01L51/0545
摘要： A method for making a thin film transistor (TFT) is provided. A mask is first formed on the backside of a substrate, and is used to fabricate a gate, source, and drain of the transistor by backside exposure, such that the source and drain can be self-aligned with the gate pattern. In this way, an alignment shift due to expansion or contraction after performing a high temperature process on an insulating layer can be avoided. Further, since the backside mask previously formed on the substrate can be shifted with the expansion or contraction of the substrate, the process is simplified. Moreover, the source/drain can be accurately aligned with the gate, so that parasitic capacitance can be reduced and flickering of the panel can be avoided.
摘要翻译：提供了制造薄膜晶体管（TFT）的方法。首先在基板的背面形成掩模，并且用于通过背面曝光来制造晶体管的栅极，源极和漏极，使得源极和漏极可以与栅极图案自对准。以这种方式，可以避免在对绝缘层进行高温处理之后由于膨胀或收缩引起的对准移位。此外，由于预先形成在基板上的背面掩模可以随着基板的膨胀或收缩而偏移，因此简化了处理。此外，源极/漏极可以精确地与栅极对准，使得可以减小寄生电容并且可以避免面板的闪烁。

4. 发明授权

US07829398B2 Method for making thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07829398B2
公开(公告)日：2010-11-09
申请号：US11871155
申请日：2007-10-11
申请人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
发明人： Yi-Kai Wang , Liang-Ying Huang , Tarng-Shiang Hu , Yu-Yuan Shen
IPC分类号： H01L21/00
CPC分类号： H01L51/102 , H01L27/283 , H01L51/0023 , H01L51/0545
摘要： A method for making a thin film transistor (TFT) is provided. A mask is first formed on the backside of a substrate, and is used to fabricate a gate, source, and drain of the transistor by backside exposure, such that the source and drain can be self-aligned with the gate pattern. In this way, an alignment shift due to expansion or contraction after performing a high temperature process on an insulating layer can be avoided. Further, since the backside mask previously formed on the substrate can be shifted with the expansion or contraction of the substrate, the process is simplified. Moreover, the source/drain can be accurately aligned with the gate, so that parasitic capacitance can be reduced and flickering of the panel can be avoided.
摘要翻译：提供了制造薄膜晶体管（TFT）的方法。首先在衬底的背面形成掩模，并且用于通过背面曝光来制造晶体管的栅极，源极和漏极，使得源极和漏极可以与栅极图案自对准。以这种方式，可以避免在对绝缘层进行高温处理之后由于膨胀或收缩引起的对准移位。此外，由于预先形成在基板上的背面掩模可以随着基板的膨胀或收缩而偏移，因此简化了处理。此外，源极/漏极可以精确地与栅极对准，使得可以减小寄生电容并且可以避免面板的闪烁。

5. 发明授权

US07872263B2 Substrate structure for a thin film transistor 有权
标题翻译：薄膜晶体管的衬底结构
公开(公告)号：US07872263B2
公开(公告)日：2011-01-18
申请号：US11491192
申请日：2006-07-24
申请人： Liang-Ying Huang , Yi-Kai Wang , Tarng-Shiang Hu , Jia-Chong Ho
发明人： Liang-Ying Huang , Yi-Kai Wang , Tarng-Shiang Hu , Jia-Chong Ho
IPC分类号： H01L29/10
CPC分类号： H01L51/0021 , H01L27/1288 , H01L27/1292 , H01L29/66765 , H01L51/0545 , H01L51/105
摘要： A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.
摘要翻译：提供了TFT（薄膜晶体管）制造方法和基板结构。该结构包括基板和自对准掩模。首先制造衬底上的自对准掩模，然后在热处理期间自对准掩模可以与衬底同步延伸。当在不形成TFT的一侧设置曝光光源时，自对准掩模可以克服当塑料基板延伸时要在塑料基板上形成的源极和漏极的位置不正确的问题，对准准确性有很大的影响。结果，可以精确地定义源极和漏极的位置。

6. 发明申请

US20070059868A1 Thin film transistor manufacturing method and substrate structure 有权
标题翻译：薄膜晶体管的制造方法和基板结构
公开(公告)号：US20070059868A1
公开(公告)日：2007-03-15
申请号：US11491192
申请日：2006-07-24
申请人： Liang-Ying Huang , Yi-Kai Wang , Tarng-Shiang Hu , Jia-Chong Ho
发明人： Liang-Ying Huang , Yi-Kai Wang , Tarng-Shiang Hu , Jia-Chong Ho
IPC分类号： H01L21/84
CPC分类号： H01L51/0021 , H01L27/1288 , H01L27/1292 , H01L29/66765 , H01L51/0545 , H01L51/105
摘要： A method of TFT (Thin Film Transistor) manufacturing and a substrate structure are provided. The structure includes a substrate and a self-alignment mask. A self-alignment mask on a substrate is first manufactured and then the self-alignment mask may synchronously extend with the substrate during the thermal process. When an exposure light source is provided on the side without a TFT formed, the self-alignment mask can overcome the problem that when a plastic substrate extends, the positions of the source and drain to be formed on the plastic substrate are incorrect, which has a great effect on the accuracy of alignment. As the result, the positions of the source and drain can be defined accurately.
摘要翻译：提供了TFT（薄膜晶体管）制造方法和基板结构。该结构包括基板和自对准掩模。首先制造衬底上的自对准掩模，然后在热处理期间自对准掩模可以与衬底同步延伸。当在不形成TFT的一侧设置曝光光源时，自对准掩模可以克服当塑料基板延伸时要在塑料基板上形成的源极和漏极的位置不正确的问题，对准准确性有很大的影响。结果，可以精确地定义源极和漏极的位置。

7. 发明申请

US20080032440A1 ORGANIC SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：有机半导体器件及其制造方法
公开(公告)号：US20080032440A1
公开(公告)日：2008-02-07
申请号：US11564301
申请日：2006-11-29
申请人： Liang-Ying Huang , Tsung-Hsien Lin , Hsiang-Yuan Cheng , Tarng-Shiang Hu
发明人： Liang-Ying Huang , Tsung-Hsien Lin , Hsiang-Yuan Cheng , Tarng-Shiang Hu
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , H01L51/0018
摘要： An organic semiconductor device is provided. A conductive gate layer and a gate dielectric layer are formed on a substrate. Patterned metal layers are formed on the gate dielectric layer beside the conductive gate layer. An electrode modified layer is formed on a top surface and sidewall of each of the patterned metal layer. The patterned metal layers and the electrode modified layers formed thereon serve a source and a drain. An organic semiconductor layer is formed on the source and the drain.
摘要翻译：提供有机半导体器件。在衬底上形成导电栅极层和栅极电介质层。图案化的金属层形成在导电栅极层旁边的栅极电介质层上。电极改性层形成在每个图案化金属层的顶表面和侧壁上。图案化的金属层和其上形成的电极改性层用于源极和漏极。在源极和漏极上形成有机半导体层。

8. 发明申请

US20060180808A1 Organic semiconductor element having multi protection layers and process of making the same 有权
标题翻译：具有多个保护层的有机半导体元件及其制造方法
公开(公告)号：US20060180808A1
公开(公告)日：2006-08-17
申请号：US11149158
申请日：2005-06-10
申请人： Cheng-Chung Hsieh , Liang-Ying Huang , Tarng-Shiang Hu , Cheng-chung Lee
发明人： Cheng-Chung Hsieh , Liang-Ying Huang , Tarng-Shiang Hu , Cheng-chung Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/107 , H01L51/0021 , H01L51/0545
摘要： An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.
摘要翻译：提供了具有多个保护层的有机半导体元件及其制造方法。首先，在薄膜晶体管上形成第一保护层。接下来，形成足够厚以用作所述第一保护层上的光隔离物的第二保护层。然后在所述有机薄膜晶体管上生长多个保护层，以使得第二保护层能够通过图案化工艺具有光隔离物的附加功能。因此，可以防止有机薄膜晶体管损坏，实现制造工艺的简化和生产成本的降低。

9. 发明申请

US20060079038A1 Method of fabricating an electronic device 有权
标题翻译：制造电子装置的方法
公开(公告)号：US20060079038A1
公开(公告)日：2006-04-13
申请号：US11131387
申请日：2005-05-18
申请人： Tarng-Shiang Hu , Jia-Chong Ho , Liang-Ying Huang , Cheng-Chung Lee
发明人： Tarng-Shiang Hu , Jia-Chong Ho , Liang-Ying Huang , Cheng-Chung Lee
IPC分类号： H01L21/84
CPC分类号： H01L27/285 , H01L51/0021
摘要： A method of fabricating an electronic device includes the following steps: a) providing a substrate; b) forming a first strip on the substrate; c) coating an insulation layer on the first strip and the substrate while completely overlaying the first strip and the substrate with the same; d) forming a second strip on the insulation layer; e) forming conductive polymer on the insulation layer while completely overlaying the second strip with the same; f) etching the conductive polymer via plasma etching for completely removing the conductive polymer on the second strip; and g) forming a semiconductor layer on the second strip and the conductive polymer.
摘要翻译：一种制造电子器件的方法包括以下步骤：a）提供衬底; b）在衬底上形成第一条带; c）在第一条带和基板上涂覆绝缘层，同时完全覆盖第一条带和基板; d）在所述绝缘层上形成第二条带; e）在绝缘层上形成导电聚合物，同时完全覆盖第二条带; f）通过等离子体蚀刻蚀刻导电聚合物，以完全去除第二条带上的导电聚合物; 以及g）在所述第二条带和所述导电聚合物上形成半导体层。

10. 发明申请

US20090117686A1 METHOD OF FABRICATING ORGANIC SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造有机半导体器件的方法
公开(公告)号：US20090117686A1
公开(公告)日：2009-05-07
申请号：US12350931
申请日：2009-01-08
申请人： Liang-Ying Huang , Tsung-Hsien Lin , Hsiang-Yuan Cheng , Tarng-Shiang Hu
发明人： Liang-Ying Huang , Tsung-Hsien Lin , Hsiang-Yuan Cheng , Tarng-Shiang Hu
IPC分类号： H01L51/30
CPC分类号： H01L51/0545 , H01L51/0018
摘要： A method of fabricating an organic semiconductor device includes following steps. A gate conductive layer is formed on a substrate, and then a gate dielectric layer is formed. Next, patterned metal layers are formed on the gate dielectric layer beside the gate conductive layer. An electrode modified layer is then formed on the surface and the sidewall of each patterned metal layer, and the patterned metal layers and the electrode modified layers formed thereon serve as a source and a drain. Thereafter, an organic semiconductor layer is formed on the source and the drain and on a portion of the gate dielectric layer exposed between the source and the drain to be an active layer.
摘要翻译：制造有机半导体器件的方法包括以下步骤。在基板上形成栅极导电层，然后形成栅极电介质层。接下来，在栅极导电层旁边的栅极电介质层上形成图案化的金属层。然后在每个图案化金属层的表面和侧壁上形成电极改性层，并且其上形成的图案化金属层和电极改性层用作源极和漏极。此后，在源极和漏极以及暴露在源极和漏极之间的栅极电介质层的一部分上形成有机半导体层为有源层。

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