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    • 4. 发明授权
    • Ternary nitride-based buffer layer of a nitride-based light-emitting device and a method for manufacturing the same
    • 氮化物系发光元件的三元氮化物系缓冲层及其制造方法
    • US07497905B2
    • 2009-03-03
    • US10711567
    • 2004-09-24
    • Chen OuWen-Hsiang LinShih-Kuo Lai
    • Chen OuWen-Hsiang LinShih-Kuo Lai
    • C30B25/02
    • H01L33/007H01L21/0237H01L21/0242H01L21/02458H01L21/0254H01L21/0262
    • Ternary nitride-based buffer layer of a nitride-based light-emitting device and related manufacturing method. The device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a ternary nitride-based buffer layer, a first conductivity type nitride-based semiconductor layer, a light-emitting layer, and a second conductivity type nitride-based semiconductor layer. The manufacturing method includes introducing a first reaction source containing a first group III element into a chamber at a first temperature that is subsequently deposited on the surface of the substrate, the melting point of said element being lower than the first temperature. Introducing a second reaction source containing a second group III element and a third reaction source containing a nitrogen element into the chamber at a second temperature, no lower than the melting point of the first group III element, for forming a ternary nitride-based buffer layer with the first group III element.
    • 氮化物系发光元件的三元氮化物系缓冲层及其制造方法。 该装置包括基板和多个层,其以下列顺序形成在基板上:三元氮化物基缓冲层,第一导电型氮化物基半导体层,发光层和第二导电型氮化物基缓冲层, 基于半导体层。 该制造方法包括将包含第一III族元素的第一反应源在随后沉积在基材表面上的第一温度下引入室中,所述元素的熔点低于第一温度。 在不低于第一III族元素的熔点的第二温度下引入含有第二组III元素的第二反应源和含有氮元素的第三反应源,用于形成三元氮化物基缓冲层 与第一组III元素。
    • 5. 发明申请
    • POWER SUPPLY APPARATUS HAVING MULTIPLE POWER OUTPUT DEVICES
    • 具有多个电力输出装置的电源装置
    • US20070270003A1
    • 2007-11-22
    • US11534104
    • 2006-09-21
    • Wen-Hsiang LinSzu-Lu HuangHung-Chang Hsieh
    • Wen-Hsiang LinSzu-Lu HuangHung-Chang Hsieh
    • H01R13/648
    • H01R13/6272H01R13/639
    • A power supply apparatus includes a main body, a power input device, a first power output device and a second power output device. The power input device is coupled to an input terminal of the main body. The first power output device includes a first cable and a first connector. The first cable is interconnected between a first output terminal of the main body and a first surface of the first connector. An extension part is extended from the first surface of the first connector. The second power output device includes a second cable and a second connector. A first surface of the second connector is suppressed by the extension part of the first connector to facilitate securely fixing the first connector and the second connector in a power socket, so that a regulated output voltage is outputted from the first and second output devices to the power socket.
    • 电源装置包括主体,电源输入装置,第一电力输出装置和第二电力输出装置。 电源输入装置耦合到主体的输入端子。 第一电力输出装置包括第一电缆和第一连接器。 第一电缆在主体的第一输出端子和第一连接器的第一表面之间互连。 延伸部分从第一连​​接器的第一表面延伸。 第二电力输出装置包括第二电缆和第二连接器。 第二连接器的第一表面被第一连接器的延伸部分抑制,以便将第一连接器和第二连接器牢固地固定在电源插座中,使得稳定的输出电压从第一和第二输出装置输出到 电源插座。
    • 9. 发明申请
    • TERNARY NITRIDE-BASED BUFFER LAYER OF A NITRIDE-BASED LIGHT-EMITTING DEVICE AND A METHOD FOR MANUFACTURING THE SAME
    • 基于氮化物的发光器件的基于氮化物的缓冲层及其制造方法
    • US20050221520A1
    • 2005-10-06
    • US10711567
    • 2004-09-24
    • Chen OuWen-Hsiang LinShih-Kuo Lai
    • Chen OuWen-Hsiang LinShih-Kuo Lai
    • H01L21/00H01L21/20H01L21/205H01L33/06H01L33/12H01L33/32
    • H01L33/007H01L21/0237H01L21/0242H01L21/02458H01L21/0254H01L21/0262
    • Ternary nitride-based buffer layer of a nitride-based light-emitting device and related manufacturing method. The device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a ternary nitride-based buffer layer, a first conductivity type nitride-based semiconductor layer, a light-emitting layer, and a second conductivity type nitride-based semiconductor layer. The manufacturing method includes introducing a first reaction source containing a first group III element into a chamber at a first temperature that is subsequently deposited on the surface of the substrate, the melting point of said element being lower than the first temperature. Introducing a second reaction source containing a second group III element and a third reaction source containing a nitrogen element into the chamber at a second temperature, no lower than the melting point of the first group III element, for forming a ternary nitride-based buffer layer with the first group III element.
    • 氮化物系发光元件的三元氮化物系缓冲层及其制造方法。 该装置包括基板和多个层,其以下列顺序形成在基板上:三元氮化物基缓冲层,第一导电型氮化物基半导体层,发光层和第二导电型氮化物基缓冲层, 基于半导体层。 该制造方法包括将包含第一III族元素的第一反应源在随后沉积在基材表面上的第一温度下引入室中,所述元素的熔点低于第一温度。 在不低于第一III族元素的熔点的第二温度下引入含有第二组III元素的第二反应源和含有氮元素的第三反应源,用于形成三元氮化物基缓冲层 与第一组III元素。
    • 10. 发明授权
    • Method and apparatus for performing bus transactions orderly and concurrently in a bus bridge
    • 在公交车桥上有序且同时进行总线交易的方法和装置
    • US06226704B1
    • 2001-05-01
    • US09201993
    • 1998-12-01
    • Wan-Kuang WangWen-Hsiang LinMichael T. H. Chen
    • Wan-Kuang WangWen-Hsiang LinMichael T. H. Chen
    • G06F1342
    • G06F13/4036
    • The present invention provides a method and apparatus for performing bus transactions orderly and concurrently in a bus bridge. To meet the ordering rules, the invention adopts a HOLD/HLDA handshaking mechanism to control the flow of transactions in the bus bridge. When both HOLD and HLDA signals are asserted, the bus bridge holds the transaction processed in one direction and then the bus bridge is ready to process the transaction from another direction. That is, the bus bridge first controls the transaction flowing in one direction whenever there is request coming from another direction, wherein the HOLD signal is asserted simultaneously. Upon receipt of the HLDA signal indicating that the transaction flow has been completely held in one direction, the bus bridge allows the transaction to flow from another direction by granting the request agent bus ownership. The present invention also provides a method to avoid deadlock. The bus bridge retries transactions stalling the bus in two cases. First, the bus bridge retries non-postable transactions until the posted transactions in the posting buffers on the same side are completed at the destination. Second, the bus bridge retries postable transactions until the posting buffers on the same side have sufficient spaces to accept transactions.
    • 本发明提供一种用于在总线桥中有序并且同时执行总线业务的方法和装置。 为了满足订货规则,本发明采用HOLD / HLDA握手机制来控制公交车桥交易流量。 当HOLD和HLDA信号都被置位时,总线桥将一个方向的事务处理,然后总线桥准备好从另一方向处理事务。 也就是说,只要存在来自另一方向的请求,总线桥首先控制事务在一个方向上流动,其中HOLD信号同时被断言。 当接收到指示事务流已经完全保持在一个方向上的HLDA信号时,总线桥允许通过授予请求代理总线所有权从另一个方向流动该事务。 本发明还提供了一种避免死锁的方法。 公车大桥重试两次交通拖车。 首先,总线桥接器重试非可发布事务,直到同一侧的发布缓冲区中发布的事务在目的地完成。 其次,巴士桥重试可交易交易,直到同一侧的发布缓冲区有足够的空间来接受交易。