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1. 发明授权

US09217829B2 Compact and low loss Y-junction for submicron silicon waveguide 有权
标题翻译：亚微米硅波导的紧凑型低损耗Y型结
公开(公告)号：US09217829B2
公开(公告)日：2015-12-22
申请号：US14093263
申请日：2013-11-29
申请人： Yi Zhang , Shuyu Yang , Tom Baehr-Jones
发明人： Yi Zhang , Shuyu Yang , Tom Baehr-Jones
IPC分类号： G02B6/26 , G02B6/42 , G02B6/28 , G02B6/125 , G02B6/122 , G02B6/12
CPC分类号： G02B6/125 , G02B6/107 , G02B6/1223 , G02B6/1228 , G02B6/2808 , G02B27/0012 , G02B2006/12038 , G02B2006/12061 , G02B2006/1215 , G06F17/5009 , G06F17/5018 , G06F17/5077 , G06N3/126
摘要： A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 μm×2 μm, orders of magnitude smaller than MMI and directional couplers.
摘要翻译：亚微米硅波导的紧凑，低损耗和波长不敏感的Y结。该设计采用FDTD和粒子群优化（PSO）进行。该器件采用248nm CMOS线制造。 8英寸晶圆的测量平均插入损耗为0.28±0.02 dB。器件占地面积小于1.2μm×2μm，比MMI和定向耦合器小一个数量级。

2. 发明申请

US20140178005A1 Compact and low loss Y-junction for submicron silicon waveguide 有权
标题翻译：亚微米硅波导的紧凑型低损耗Y型结
公开(公告)号：US20140178005A1
公开(公告)日：2014-06-26
申请号：US14093263
申请日：2013-11-29
申请人： Yi Zhang , Shuyu Yang , Tom Baehr-Jones
发明人： Yi Zhang , Shuyu Yang , Tom Baehr-Jones
IPC分类号： G02B6/28
CPC分类号： G02B6/125 , G02B6/107 , G02B6/1223 , G02B6/1228 , G02B6/2808 , G02B27/0012 , G02B2006/12038 , G02B2006/12061 , G02B2006/1215 , G06F17/5009 , G06F17/5018 , G06F17/5077 , G06N3/126
摘要： A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 μm×2 μm, orders of magnitude smaller than MMI and directional couplers.
摘要翻译：亚微米硅波导的紧凑，低损耗和波长不敏感的Y结。该设计采用FDTD和粒子群优化（PSO）进行。该器件采用248nm CMOS线制造。 8英寸晶圆的测量平均插入损耗为0.28±0.02 dB。器件占地面积小于1.2μm×2μm，比MMI和定向耦合器小一个数量级。

3. 发明申请

US20140341497A1 ULTRA-RESPONSIVE PHASE SHIFTERS FOR DEPLETION MODE SILICON MODULATORS 有权
标题翻译：用于隔离模式硅调制器的超声波相位切换器
公开(公告)号：US20140341497A1
公开(公告)日：2014-11-20
申请号：US14060058
申请日：2013-10-22
申请人： Yang Liu , Tom Baehr-Jones
发明人： Yang Liu , Tom Baehr-Jones
IPC分类号： G02F1/01
CPC分类号： G02F1/025 , G02F1/01 , G02F1/011 , G02F1/015 , G02F1/035 , G02F1/0353 , G02F1/0356 , G02F1/2257 , G02F2001/0113 , G02F2001/0152
摘要： A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3 V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.
摘要翻译：描述了基于实验验证的模型的基于载波耗尽的硅调制器的新型移相器设计。据信，迄今为止忽略不完全电离的作用将对超灵敏移相器产生重大影响。预期可以观察到与20dB / cm的低传播损耗相关联的0.3V·cm的低V＆pgr L产品。移相器基于重叠的植入步骤，其中仔细选择剂量和能量以利用反掺杂产生S形结。该接头具有特别有吸引力的V＆pgr; L品质因数，同时实现了极低的电容和光损耗。这种改进将使得能够构造出显着更小的马赫 - 曾德调制器，尽管如此，驱动电压也将较低，插入损耗也大大降低。所描述的制造过程具有最小的复杂性; 特别地，不需要高分辨率光刻步骤。

4. 发明授权

US08067724B2 All-optical integrated photonic clock having a delay line for providing gate signal to a gate waveguide 有权
标题翻译：具有用于向栅极波导提供栅极信号的延迟线的全光学积分光子钟
公开(公告)号：US08067724B2
公开(公告)日：2011-11-29
申请号：US12455008
申请日：2009-05-27
申请人： Michael J. Hochberg , Tom Baehr-Jones
发明人： Michael J. Hochberg , Tom Baehr-Jones
IPC分类号： G01J1/04
CPC分类号： H03B17/00 , G02F1/0126 , G02F1/025 , G02F1/2257 , G02F2001/0152 , G02F2203/54
摘要： An all-optical integrated photonic clock, systems employing the same, and methods of making and using the same. Illustrative examples are provided based on silicon semiconductor technology that employs rectangular waveguides fabricated on SOI wafers. In some embodiments, the clock can provide an optical timing signal. In some embodiments, the clock can provide a jitter-free electrical signal derived from the clock by use of a high speed photodetector.
摘要翻译：全光学综合光子钟，采用相同的系统及其制作和使用方法。提供了基于在SOI晶片上制造的矩形波导的硅半导体技术的示例性实例。在一些实施例中，时钟可以提供光学定时信号。在一些实施例中，时钟可以通过使用高速光电检测器来提供从时钟导出的无抖动电信号。

5. 发明申请

US20110057091A1 All-optical integrated photonic clock 有权
标题翻译：全光集成光子钟
公开(公告)号：US20110057091A1
公开(公告)日：2011-03-10
申请号：US12455008
申请日：2009-05-27
申请人： Michael J. Hochberg , Tom Baehr-Jones
发明人： Michael J. Hochberg , Tom Baehr-Jones
IPC分类号： H03B17/00 , G02F1/025
CPC分类号： H03B17/00 , G02F1/0126 , G02F1/025 , G02F1/2257 , G02F2001/0152 , G02F2203/54
摘要： An all-optical integrated photonic clock, systems employing the same, and methods of making and using the same. Illustrative examples are provided based on silicon semiconductor technology that employs rectangular waveguides fabricated on SOI wafers. In some embodiments, the clock can provide an optical timing signal. In some embodiments, the clock can provide a jitter-free electrical signal derived from the clock by use of a high speed photodetector.
摘要翻译：全光学综合光子钟，采用相同的系统及其制作和使用方法。提供了基于在SOI晶片上制造的矩形波导的硅半导体技术的示例性实例。在一些实施例中，时钟可以提供光学定时信号。在一些实施例中，时钟可以通过使用高速光电检测器来提供从时钟导出的无抖动电信号。

6. 发明授权

US07454095B2 Integrated plasmon and dielectric waveguides 有权
标题翻译：集成等离子体和介质波导
公开(公告)号：US07454095B2
公开(公告)日：2008-11-18
申请号：US11116110
申请日：2005-04-26
申请人： Tom Baehr-Jones , Michael J. Hochberg , Axel Scherer
发明人： Tom Baehr-Jones , Michael J. Hochberg , Axel Scherer
IPC分类号： G02B6/12 , G02B6/26
CPC分类号： G02B6/1226 , B82Y20/00
摘要： A metal waveguide is coupled to a dielectric waveguide to obtain transmission of light in a plasmon mode along an edge of the metal waveguide. Efficient, broadband light transmission is obtained, achieving a low insertion loss, using standard processing tools. An efficient integrated optical circuit is obtained.
摘要翻译：金属波导耦合到电介质波导，以沿着金属波导的边缘获得等离子体激发光的透射。使用标准的处理工具，实现了高效的宽带光传输，实现了低插入损耗。获得了高效的集成光电路。

7. 发明授权

US09158138B2 Ultra-responsive phase shifters for depletion mode silicon modulators 有权
标题翻译：用于耗尽型硅调制器的超响应型移相器
公开(公告)号：US09158138B2
公开(公告)日：2015-10-13
申请号：US14060058
申请日：2013-10-22
申请人： Yang Liu , Tom Baehr-Jones
发明人： Yang Liu , Tom Baehr-Jones
IPC分类号： G02F1/035 , G02F1/025 , G02F1/015 , G02F1/225 , G02F1/01
CPC分类号： G02F1/025 , G02F1/01 , G02F1/011 , G02F1/015 , G02F1/035 , G02F1/0353 , G02F1/0356 , G02F1/2257 , G02F2001/0113 , G02F2001/0152
摘要： A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3 V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.
摘要翻译：描述了基于实验验证的模型的基于载波耗尽的硅调制器的新型移相器设计。据信，迄今为止忽略不完全电离的作用将对超灵敏移相器产生重大影响。预期可以观察到与20dB / cm的低传播损耗相关联的0.3V·cm的低V＆pgr L产品。移相器基于重叠的植入步骤，其中仔细选择剂量和能量以利用反掺杂产生S形结。该接头具有特别有吸引力的V＆pgr; L品质因数，同时实现了极低的电容和光损耗。这种改进将使得能够构造出显着更小的马赫 - 曾德调制器，尽管如此，驱动电压也将较低，插入损耗也大大降低。所描述的制造过程具有最小的复杂性; 特别地，不需要高分辨率光刻步骤。

8. 发明授权

US08311374B2 Beam generation and steering with integrated optical circuits for light detection and ranging 有权
标题翻译：光束发生和转向与集成光电路进行光检测和测距
公开(公告)号：US08311374B2
公开(公告)日：2012-11-13
申请号：US12511201
申请日：2009-07-29
申请人： Michael J. Hochberg , Tom Baehr-Jones
发明人： Michael J. Hochberg , Tom Baehr-Jones
IPC分类号： G02B6/12 , G02B6/26 , G02B6/42
CPC分类号： G02B6/12007 , G01S7/4813 , G01S7/4814 , G01S17/42 , G21K1/025
摘要： An integrated photonic beam steering device includes a planar photonic substrate. An input waveguide is configured to accept an electromagnetic energy from a source of electromagnetic energy radiation. A first splitter is configured to split the electromagnetic radiation into one or more paths. One or more phased array rows are optically coupled to each of the one or more paths. Each phased array row includes a row splitter configured to split the each of the one or more paths into two or more row paths. Two or more phase modulators are each optically coupled respectively to each of the two or more row paths. Two or more output couplers are optically coupled respectively to each phase modulator output of the two or more phase modulators. The two or more output couplers are configured to radiate a steered photonic beam away from the integrated photonic beam steering device.
摘要翻译：集成光子束转向装置包括平面光子衬底。输入波导被配置为从电磁能辐射源接受电磁能。第一分离器被配置成将电磁辐射分成一个或多个路径。一个或多个相控阵列行光耦合到一个或多个路径中的每一个。每个相控阵列行包括配置成将一个或多个路径中的每一个划分成两个或更多个行路径的行分配器。两个或更多个相位调制器分别光耦合到两个或更多个行路径中的每一个。两个或更多个输出耦合器分别光耦合到两个或多个相位调制器的每个相位调制器输出。两个或更多个输出耦合器被配置为辐射远离集成光子束转向装置的转向光子束。

9. 发明授权

US08203115B2 Method of performing hyperspectral imaging with photonic integrated circuits 有权
标题翻译：用光子集成电路进行高光谱成像的方法
公开(公告)号：US08203115B2
公开(公告)日：2012-06-19
申请号：US12511346
申请日：2009-07-29
申请人： Michael J. Hochberg , Tom Baehr-Jones
发明人： Michael J. Hochberg , Tom Baehr-Jones
IPC分类号： G02B6/26
CPC分类号： H01L27/14621 , G02B6/12004 , G02B6/12007 , H01L27/14627 , H01L27/14629
摘要： According to the invention, an integrated hyperspectral imager includes a planar photonic substrate. A plurality of imaging pixel photonic circuits is disposed in a M×N array on the planar photonic substrate. Each imaging pixel photonic circuit includes an input coupler configured to receive a broadband input electromagnetic radiation. A waveguide is optically coupled to the input coupler. A plurality of wavelength filters is optically coupled to the waveguide. Each wavelength filter has a wavelength filter input and a wavelength filter output. Each detector has a detector input optically coupled respectively to each of the wavelength filter outputs. Each detector has a respective detector output. The integrated hyperspectral imager is configured to provide electrical signals that are representative of a hyperspectral image of the received broadband input electromagnetic radiation. A method for recording an image based on a received electromagnetic radiation is also described.
摘要翻译：根据本发明，集成的高光谱成像器包括平面光子衬底。多个成像像素光子电路被布置在平面光子基片上的M×N阵列中。每个成像像素光子电路包括被配置为接收宽带输入电磁辐射的输入耦合器。波导光耦合到输入耦合器。多个波长滤波器光耦合到波导。每个波长滤波器具有波长滤波器输入和波长滤波器输出。每个检测器具有分别光耦合到每个波长滤波器输出的检测器输入。每个检测器具有相应的检测器输出。集成的高光谱成像器被配置为提供代表所接收的宽带输入电磁辐射的高光谱图像的电信号。还描述了基于接收的电磁辐射记录图像的方法。

10. 发明授权

US08098965B1 Electroabsorption modulator based on fermi level tuning 有权
标题翻译：基于费米能级调谐的电吸收调制器
公开(公告)号：US08098965B1
公开(公告)日：2012-01-17
申请号：US12630829
申请日：2009-12-03
申请人： Tom Baehr-Jones , Michael J. Hochberg
发明人： Tom Baehr-Jones , Michael J. Hochberg
IPC分类号： G02F1/035 , G02B6/26 , G02B6/42
CPC分类号： G02F1/025 , G02F1/2257 , G02F2001/0152
摘要： A novel electroabsorption modulator based on tuning the Fermi level relative to mid-gap states in a semiconductor. The modulator includes a semiconductor waveguide that has an input port and an output port. Between the input port and the output port is a section of the waveguide that functions as an electroabsorptive region. Adjacent to the electroabsorptive region are electrical contacts. In operation by adjusting voltages on the electrical contacts, the quasi-Fermi level in the electroabsorptive region of the semiconductor waveguide is brought above or below mid band-gap electronic states. As these states transition between occupancy and vacancy, the absorption coefficient for optical radiation in the electroabsorptive region of the semiconductor changes. As this change in absorption coefficient modulates the intensity of transmitted radiation in response to an input data stream driving the voltages, the device functions as a semiconductor optical modulator in accordance with the principles of the invention.
摘要翻译：一种新型的电吸收调制器，其基于调制半导体中的中间状态的费米能级。调制器包括具有输入端口和输出端口的半导体波导。在输入端口和输出端口之间是用作电吸收区域的波导部分。与电吸收区相邻的是电接点。在通过调节电触点上的电压的操作中，半导体波导的电吸收区域中的准费米能级高于或低于中间带隙电子状态。随着这些状态在占用和空位之间的转变，半导体电吸收区域的光辐射吸收系数发生变化。由于这种吸收系数的变化响应于驱动电压的输入数据流来调制透射辐射的强度，所以该装置用作根据本发明的原理的半导体光调制器。

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