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    • 1. 发明申请
    • ULTRA-RESPONSIVE PHASE SHIFTERS FOR DEPLETION MODE SILICON MODULATORS
    • 用于隔离模式硅调制器的超声波相位切换器
    • US20140341497A1
    • 2014-11-20
    • US14060058
    • 2013-10-22
    • Yang LiuTom Baehr-Jones
    • Yang LiuTom Baehr-Jones
    • G02F1/01
    • G02F1/025G02F1/01G02F1/011G02F1/015G02F1/035G02F1/0353G02F1/0356G02F1/2257G02F2001/0113G02F2001/0152
    • A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3 V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.
    • 描述了基于实验验证的模型的基于载波耗尽的硅调制器的新型移相器设计。 据信,迄今为止忽略不完全电离的作用将对超灵敏移相器产生重大影响。 预期可以观察到与20dB / cm的低传播损耗相关联的0.3V·cm的低V&pgr L产品。 移相器基于重叠的植入步骤,其中仔细选择剂量和能量以利用反掺杂产生S形结。 该接头具有特别有吸引力的V&pgr; L品质因数,同时实现了极低的电容和光损耗。 这种改进将使得能够构造出显着更小的马赫 - 曾德调制器,尽管如此,驱动电压也将较低,插入损耗也大大降低。 所描述的制造过程具有最小的复杂性; 特别地,不需要高分辨率光刻步骤。
    • 2. 发明授权
    • Ultra-responsive phase shifters for depletion mode silicon modulators
    • 用于耗尽型硅调制器的超响应型移相器
    • US09158138B2
    • 2015-10-13
    • US14060058
    • 2013-10-22
    • Yang LiuTom Baehr-Jones
    • Yang LiuTom Baehr-Jones
    • G02F1/035G02F1/025G02F1/015G02F1/225G02F1/01
    • G02F1/025G02F1/01G02F1/011G02F1/015G02F1/035G02F1/0353G02F1/0356G02F1/2257G02F2001/0113G02F2001/0152
    • A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3 V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.
    • 描述了基于实验验证的模型的基于载波耗尽的硅调制器的新型移相器设计。 据信,迄今为止忽略不完全电离的作用将对超灵敏移相器产生重大影响。 预期可以观察到与20dB / cm的低传播损耗相关联的0.3V·cm的低V&pgr L产品。 移相器基于重叠的植入步骤,其中仔细选择剂量和能量以利用反掺杂产生S形结。 该接头具有特别有吸引力的V&pgr; L品质因数,同时实现了极低的电容和光损耗。 这种改进将使得能够构造出显着更小的马赫 - 曾德调制器,尽管如此,驱动电压也将较低,插入损耗也大大降低。 所描述的制造过程具有最小的复杂性; 特别地,不需要高分辨率光刻步骤。
    • 6. 发明授权
    • Beam generation and steering with integrated optical circuits for light detection and ranging
    • 光束发生和转向与集成光电路进行光检测和测距
    • US08311374B2
    • 2012-11-13
    • US12511201
    • 2009-07-29
    • Michael J. HochbergTom Baehr-Jones
    • Michael J. HochbergTom Baehr-Jones
    • G02B6/12G02B6/26G02B6/42
    • G02B6/12007G01S7/4813G01S7/4814G01S17/42G21K1/025
    • An integrated photonic beam steering device includes a planar photonic substrate. An input waveguide is configured to accept an electromagnetic energy from a source of electromagnetic energy radiation. A first splitter is configured to split the electromagnetic radiation into one or more paths. One or more phased array rows are optically coupled to each of the one or more paths. Each phased array row includes a row splitter configured to split the each of the one or more paths into two or more row paths. Two or more phase modulators are each optically coupled respectively to each of the two or more row paths. Two or more output couplers are optically coupled respectively to each phase modulator output of the two or more phase modulators. The two or more output couplers are configured to radiate a steered photonic beam away from the integrated photonic beam steering device.
    • 集成光子束转向装置包括平面光子衬底。 输入波导被配置为从电磁能辐射源接受电磁能。 第一分离器被配置成将电磁辐射分成一个或多个路径。 一个或多个相控阵列行光耦合到一个或多个路径中的每一个。 每个相控阵列行包括配置成将一个或多个路径中的每一个划分成两个或更多个行路径的行分配器。 两个或更多个相位调制器分别光耦合到两个或更多个行路径中的每一个。 两个或更多个输出耦合器分别光耦合到两个或多个相位调制器的每个相位调制器输出。 两个或更多个输出耦合器被配置为辐射远离集成光子束转向装置的转向光子束。
    • 7. 发明授权
    • Method of performing hyperspectral imaging with photonic integrated circuits
    • 用光子集成电路进行高光谱成像的方法
    • US08203115B2
    • 2012-06-19
    • US12511346
    • 2009-07-29
    • Michael J. HochbergTom Baehr-Jones
    • Michael J. HochbergTom Baehr-Jones
    • G02B6/26
    • H01L27/14621G02B6/12004G02B6/12007H01L27/14627H01L27/14629
    • According to the invention, an integrated hyperspectral imager includes a planar photonic substrate. A plurality of imaging pixel photonic circuits is disposed in a M×N array on the planar photonic substrate. Each imaging pixel photonic circuit includes an input coupler configured to receive a broadband input electromagnetic radiation. A waveguide is optically coupled to the input coupler. A plurality of wavelength filters is optically coupled to the waveguide. Each wavelength filter has a wavelength filter input and a wavelength filter output. Each detector has a detector input optically coupled respectively to each of the wavelength filter outputs. Each detector has a respective detector output. The integrated hyperspectral imager is configured to provide electrical signals that are representative of a hyperspectral image of the received broadband input electromagnetic radiation. A method for recording an image based on a received electromagnetic radiation is also described.
    • 根据本发明,集成的高光谱成像器包括平面光子衬底。 多个成像像素光子电路被布置在平面光子基片上的M×N阵列中。 每个成像像素光子电路包括被配置为接收宽带输入电磁辐射的输入耦合器。 波导光耦合到输入耦合器。 多个波长滤波器光耦合到波导。 每个波长滤波器具有波长滤波器输入和波长滤波器输出。 每个检测器具有分别光耦合到每个波长滤波器输出的检测器输入。 每个检测器具有相应的检测器输出。 集成的高光谱成像器被配置为提供代表所接收的宽带输入电磁辐射的高光谱图像的电信号。 还描述了基于接收的电磁辐射记录图像的方法。
    • 8. 发明授权
    • Electroabsorption modulator based on fermi level tuning
    • 基于费米能级调谐的电吸收调制器
    • US08098965B1
    • 2012-01-17
    • US12630829
    • 2009-12-03
    • Tom Baehr-JonesMichael J. Hochberg
    • Tom Baehr-JonesMichael J. Hochberg
    • G02F1/035G02B6/26G02B6/42
    • G02F1/025G02F1/2257G02F2001/0152
    • A novel electroabsorption modulator based on tuning the Fermi level relative to mid-gap states in a semiconductor. The modulator includes a semiconductor waveguide that has an input port and an output port. Between the input port and the output port is a section of the waveguide that functions as an electroabsorptive region. Adjacent to the electroabsorptive region are electrical contacts. In operation by adjusting voltages on the electrical contacts, the quasi-Fermi level in the electroabsorptive region of the semiconductor waveguide is brought above or below mid band-gap electronic states. As these states transition between occupancy and vacancy, the absorption coefficient for optical radiation in the electroabsorptive region of the semiconductor changes. As this change in absorption coefficient modulates the intensity of transmitted radiation in response to an input data stream driving the voltages, the device functions as a semiconductor optical modulator in accordance with the principles of the invention.
    • 一种新型的电吸收调制器,其基于调制半导体中的中间状态的费米能级。 调制器包括具有输入端口和输出端口的半导体波导。 在输入端口和输出端口之间是用作电吸收区域的波导部分。 与电吸收区相邻的是电接点。 在通过调节电触点上的电压的操作中,半导体波导的电吸收区域中的准费米能级高于或低于中间带隙电子状态。 随着这些状态在占用和空位之间的转变,半导体电吸收区域的光辐射吸收系数发生变化。 由于这种吸收系数的变化响应于驱动电压的输入数据流来调制透射辐射的强度,所以该装置用作根据本发明的原理的半导体光调制器。
    • 10. 发明申请
    • All-optical modulation and sdwitching with patterned optically absorbing polymers
    • 全光学调制和图案光学吸收聚合物的旋转
    • US20090297094A1
    • 2009-12-03
    • US12455092
    • 2009-05-28
    • Michael J. HochbergTom Baehr-Jones
    • Michael J. HochbergTom Baehr-Jones
    • G02B6/12G02B6/02
    • G02F3/00B82Y20/00G02B6/12007G02B6/1223G02F1/065G02F1/3515G02F1/3534G02F2203/13
    • All-optical processing devices that include patterned optically active polymers. The devices that are constructed according to principles of the invention include at least one optical input port and at least one optical output port, respectively configured to accept optical input signals and provide optical output signals. The devices include optically active material such as organic polymers that interact with illumination at a first wavelength to change at least one optical property in a non-linear manner. The optically active polymer can be placed adjacent one or more waveguides that allow the input illumination to propagate. As the optical property of the optically active material is changed by the incident illumination, the propagating illumination undergoes a modulation or change in phase, thereby providing an optical output signal having a desired relation to the optical input signal, such as the result of a logical or a computational operation.
    • 包括图案化光学活性聚合物的全光学处理装置。 根据本发明的原理构造的装置包括至少一个光输入端口和至少一个光输出端口,分别被配置为接受光输入信号并提供光输出信号。 这些装置包括光学活性材料,例如与第一波长的照明相互作用的有机聚合物,以非线性方式改变至少一种光学性质。 光学活性聚合物可以放置在允许输入照射传播的一个或多个波导附近。 由于光学活性材料的光学特性被入射照射改变,所以传播照明经历相位调制或变化,从而提供与光输入信号具有期望关系的光输出信号,例如逻辑 或计算操作。