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1. 发明授权

US06267853B1 Electro-chemical deposition system 失效
标题翻译：电化学沉积系统
公开(公告)号：US06267853B1
公开(公告)日：2001-07-31
申请号：US09350210
申请日：1999-07-09
申请人： Yezdi Dordi , Muhammad Atif Malik , Henan Hao , Timothy H. Franklin , Joe Stevens , Donald Olgado
发明人： Yezdi Dordi , Muhammad Atif Malik , Henan Hao , Timothy H. Franklin , Joe Stevens , Donald Olgado
IPC分类号： C25B1500
CPC分类号： C25D17/001 , C25D7/123 , H01L21/2885 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes an edge bead removal/spin-rinse-dry (EBR/SRD) station disposed on the mainframe adjacent the loading station, a rapid thermal anneal chamber attached to the loading station, a seed layer repair station disposed on the mainframe, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要翻译：本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个电加工电池。优选地，电化学沉积系统包括设置在与装载站相邻的主机上的边缘珠去除/旋转干燥（EBR / SRD）站，附接到装载站的快速热退火室，种子层修复站设置在主机上，以及用于控制电化学沉积过程和电化学沉积系统的部件的系统控制器。

2. 发明授权

US06878245B2 Method and apparatus for reducing organic depletion during non-processing time periods 失效
标题翻译：在非处理时间段内减少有机物耗尽的方法和装置
公开(公告)号：US06878245B2
公开(公告)日：2005-04-12
申请号：US10085338
申请日：2002-02-27
申请人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Sivakami Ramanathan , Muhammad Atif Malik , Girish A. Dixit
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Sivakami Ramanathan , Muhammad Atif Malik , Girish A. Dixit
IPC分类号： C25D21/14 , C25D21/18 , C25D17/00 , C25D21/00
CPC分类号： C25D21/18 , C25D21/14
摘要： Embodiments of the invention generally provide an apparatus and method for replenishing organic molecules in an electroplating bath. The replenishment process of the present invention may occur on a real-time basis, and therefore, the concentration of organics minimally varies from desired concentration levels. The replenishment method generally includes conducting pre-processing depletion measurements in order to determine organic depletion rates per current density applied in the electroplating system. Once the organic depletion rates per current density are determined, these depletion rates may be applied to an electroplating processing recipe to calculate the volume of organic depletion per recipe step. The calculated volume of organic depletion per recipe step may then be used to determine the volume of organic molecule replenishment per unit of time that is required per recipe step in order to maintain a desired concentration of organics in the plating solution. The calculated replenishment volume may then be added to the processing recipe so that the replenishment process may occur at real-time during processing periods. The apparatus generally includes a selectively actuated valve in communicaiton with a fluid delivery line, wherein the valve is configured to fluidly isolate a plating cell during a non-processing time period. The valve may be controlled by a system controller, and thus, the fluid level in the cell may be controlled during a non-processing time period.
摘要翻译：本发明的实施方案通常提供用于在电镀浴中补充有机分子的装置和方法。本发明的补充方法可以在实时的基础上进行，因此有机物的浓度最小化从期望的浓度水平变化。补充方法通常包括进行预处理耗尽测量，以便确定在电镀系统中施加的每个电流密度的有机耗尽率。一旦确定了每个电流密度的有机耗尽率，则这些耗尽率可以应用于电镀处理配方以计算每个配方步骤的有机耗尽量。然后可以使用每个配方步骤的计算的有机耗尽体积来确定每个配方步骤所需的每单位时间的有机分子补充体积，以维持电镀溶液中所需的有机物浓度。计算的补充量然后可以被添加到处理配方中，使得补货过程可以在处理时段期间实时发生。该装置通常包括与流体输送管线通信的选择性致动的阀，其中阀被配置为在非处理时间段期间流体地隔离电镀槽。阀可以由系统控制器控制，因此，可以在非处理时间段期间控制单元中的液位。

3. 发明授权

US06824666B2 Electroless deposition method over sub-micron apertures 有权
标题翻译：亚微米孔径上的无电沉积方法
公开(公告)号：US06824666B2
公开(公告)日：2004-11-30
申请号：US10059822
申请日：2002-01-28
申请人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Muhammad Atif Malik , Sivakami Ramanathan , Girish A. Dixit , Robin Cheung
发明人： Srinivas Gandikota , Chris R. McGuirk , Deenesh Padhi , Muhammad Atif Malik , Sivakami Ramanathan , Girish A. Dixit , Robin Cheung
IPC分类号： C23C2800
CPC分类号： H01L21/76843 , C23C18/1651 , C23C18/1653 , C23C18/1696 , C23C18/1831 , C23C18/28 , C23C18/30 , C23C18/38 , H01L21/288 , H01L21/2885 , H01L21/6708 , H01L21/76864 , H01L21/76868 , H01L21/76871 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , Y10S428/936
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要翻译：一种沉积包含至少一种选自贵金属，半贵金属，其合金及其组合的金属的催化剂层的装置和方法，其形成在基板上形成的亚微米特征。贵金属的实例包括钯和铂。半贵金属的实例包括钴，镍和钨。可通过无电沉积，电镀或化学气相沉积来沉积催化层。在一个实施方案中，催化层可以沉积在特征中以用作随后沉积的导电材料的阻挡层。在另一个实施方案中，催化剂层可以沉积在阻挡层上。在另一个实施方案中，催化层可以沉积在沉积在阻挡层上的种子层上，以充当种子层中任何不连续性的“贴片”。一旦沉积了催化层，可以在催化剂层上沉积诸如铜的导电材料。在一个实施例中，导电材料通过无电沉积沉积在催化剂层上。在另一个实施方案中，导电材料通过无电沉积然后电镀或随后进行化学气相沉积沉积在催化剂层上。在另一个实施例中，导电材料通过电镀或化学气相沉积沉积在催化层上。

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