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    • 5. 发明授权
    • Methods and apparatus for linear scan magnetron sputtering
    • 线性扫描磁控溅射的方法和装置
    • US5873989A
    • 1999-02-23
    • US795754
    • 1997-02-06
    • John L. HughesGary A. DavisRobert J. KolenkowCarl T. PetersenNorman H. PondRobert E. Weiss
    • John L. HughesGary A. DavisRobert J. KolenkowCarl T. PetersenNorman H. PondRobert E. Weiss
    • C23C14/35H01J37/34C23C14/34
    • H01J37/3455C23C14/35H01J37/3408
    • A magnetron sputtering source for depositing a material onto a substrate includes a target from which the material is sputtered, a magnet assembly disposed in proximity to the target for confining a plasma at the surface of the target and a drive assembly for scanning the magnet assembly relative to the target. The sputtering source may further include an anode for maintaining substantially constant plasma characteristics as the magnet assembly is scanned relative to the target. The anode may be implemented as variable voltage stationary electrodes positioned at or near the opposite ends of the scan path followed by the magnet assembly, spaced-apart anode wires positioned between the target and the substrate or a movable anode that is scanned with the magnet assembly. The magnet elements of the magnet assembly may have different spacings from the surface of the target to enhance depositional thickness uniformity. The target may be fabricated in sections, each having a target element bonded to a backing element for reduced sensitivity to thermal variations. The target may be rotated from a first fixed position to a second fixed position relative to the magnet assembly at least once during its operating life for increased target utilization.
    • 用于将材料沉积到衬底上的磁控溅射源包括溅射材料的靶,设置在靶附近的磁体组件,用于限制目标表面处的等离子体和用于扫描磁体组件的驱动组件 到目标。 当磁体组件相对于靶被扫描时,溅射源还可以包括用于维持基本恒定的等离子体特性的阳极。 阳极可以被实现为位于扫描路径的相对端处或附近的可变电压固定电极,随后是磁体组件,位于靶和衬底之间的间隔开的阳极线或者用磁体组件扫描的可移动阳极 。 磁体组件的磁体元件可以具有与目标表面不同的间隔,以增强沉积厚度均匀性。 靶可以制造成具有目标元件结合到背衬元件的部分,以降低对热变化的敏感性。 目标可以在其运行寿命期间相对于磁体组件从第一固定位置旋转至第二固定位置,以增加目标利用率。
    • 8. 发明授权
    • Umbrella holder
    • 伞架
    • US5836327A
    • 1998-11-17
    • US906577
    • 1997-08-05
    • Gary A. Davis
    • Gary A. Davis
    • A45B11/00A63B55/60B62B9/14F16M13/02A45B3/00
    • B62B9/147A45B11/00F16M11/10F16M11/2021F16M11/28F16M13/022A63B2055/602
    • An umbrella holder comprising a clamp mechanism; a right/left angular adjustment mechanism, a forward/rearward angular adjustment mechanism; a length adjustment mechanism; and an umbrella shaft and handle securing mechanism. The clamp mechanism includes an upper and lower jaw member, an upper and lower resilient clamp pad, and a clamp screw mechanism. Each upper and lower jaw member is provided with a clamp channel that is covered with the upper or lower resilient clamp pad, respectively. The clamp channels are oriented in opposed relationship and the clamp screw mechanism threadable engages the lower jaw member and rotatably engages the upper jaw member in a manner such that rotation of the clamp screw mechanism causes the upper and lower jaw to be forced together or apart depending on the direction of rotation of the clamp screw mechanism. The umbrella shaft and handle securing mechanism includes a shaft channel clamp and a handle strap assembly positioned below the shaft channel clamp. The shaft channel clamp includes a channel member having an elongated channel that is covered with resilient padding and sized to receive therein a portion of the shaft of an umbrella. A compression member rotatably connected to a shaft clamp screw mechanism is positioned within the elongated channel. The compression member has a resilient pad covering the compression surface thereof. The compression member is preferably elongated and can also have a curved channelized surface if desired. The handle strap assembly includes a flexible strap having an adjustable securing mechanism.
    • 一种伞架,包括夹紧机构; 右/左角度调节机构,前/后角度调节机构; 长度调整机制; 伞柄和手柄固定机构。 夹紧机构包括上下爪构件,上下弹性夹紧垫和夹紧螺钉机构。 每个上下钳口构件设置有分别由上或下弹性夹持垫覆盖的夹紧通道。 夹钳通道以相对关系定向,并且夹紧螺纹机构可螺纹接合下钳口构件并以可旋转地接合上钳口构件的方式使得夹紧螺钉机构的旋转使得上下钳夹压在一起或分开, 在夹紧螺丝机构的旋转方向上。 伞杆和手柄固定机构包括轴通道夹具和位于轴通道夹具下方的手柄带组件。 轴通道夹具包括具有细长通道的通道构件,该通道被弹性衬垫覆盖并且尺寸适于在其中容纳伞的轴的一部分。 可旋转地连接到轴夹螺钉机构的压缩构件定位在细长通道内。 压缩构件具有覆盖其压缩表面的弹性垫。 压缩构件优选地是细长的,并且如果需要也可以具有弯曲的通道化表面。 手柄带组件包括具有可调节固定机构的柔性带。
    • 9. 发明授权
    • Heterojunction electron transfer device
    • 异质结电子转移装置
    • US5576559A
    • 1996-11-19
    • US332880
    • 1994-11-01
    • Gary A. Davis
    • Gary A. Davis
    • H01L31/10H01J1/34H01L21/331H01L29/205H01L29/66H01L29/73H01L29/737H01L31/032H01L31/103H01L31/105H01L31/108H01L31/109H01L27/14
    • H01L31/1035H01L29/205H01L31/105H01L31/108
    • A smooth and monotonic potential energy gradient was established at a p-type (InGa)As--undopad InP heterojunction to efficiently transfer conduction electrons from the (InGa)As:p layer to the InP:.o slashed. layer. This potential energy gradient was established with a compositionally graded p-type semiconductor alloy layer and an n-type InP built-in field layer interposed at the heterojunction. The compositionally graded semiconductor alloy layer spatially distributes the conduction band discontinuity of the (InGa)As--InP heterojunction and the InP:n built-in field layer eliminates potential energy barriers from the conduction band over a wide range of externally-applied biases including no externally applied bias. The smooth and monotonic potential energy gradient thus established promotes efficient transfer of the conduction electrons due to drift from the (InGa)As:p layer to the large bandgap InP collector layer where they contribute to the output current of any number of electronic devices. The utility of this potential energy grading structure was demonstrated in a transferred-electron photocathode device wherein the efficient transfer of photoelectrons from the (InGa)As:p absorber layer to the InP:.o slashed. electron-transfer layer has been utilized. This structure has utility in a number of electronic devices requiring such electron transfer across an (InGa)As:p--InP:.o slashed. heterojunction including p-i-n photodetectors and heterojunction bipolar transistors.
    • 在p型(InGa)As-undopad InP异质结中建立了平滑和单调的势能梯度,以有效地将传导电子从(InGa)As:p层转移到InP:+526层。 这种势能梯度是通过组成分级的p型半导体合金层和插在异质结中的n型InP内置场层建立的。 组成分级的半导体合金层在空间上分布(InGa)As-InP异质结的导带不连续性,InP:n内置场层在宽范围的外部施加的偏差范围内消除了来自导带的潜在能量障碍,包括 外部施加偏差。 这样建立的平滑和单调势能梯度促进了由于(InGa)As:p层漂移到大带隙InP集电极层的传导电子的有效传递,在那里它们有助于任何数量的电子器件的输出电流。 已经利用了转移电子光电阴极装置中的这种势能分级结构的实用性,其中已经利用了从(InGa)As:p吸收层到InP:+526电子转移层的光电子的有效转移。 该结构在许多电子器件中具有实用性,该电子器件需要通过包括p-i-n光电检测器和异质结双极晶体管的(InGa)As:p-InP:+526异质结进行电子转移。