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1. 发明授权

US5912500A Integrated photocathode 失效
标题翻译：集成光电阴极
公开(公告)号：US5912500A
公开(公告)日：1999-06-15
申请号：US561909
申请日：1995-11-22
申请人： Kenneth A. Costello , Verle W. Aebi , Robert E. Weiss
发明人： Kenneth A. Costello , Verle W. Aebi , Robert E. Weiss
IPC分类号： H01J9/12 , H01J1/34 , H01J31/50 , H01J40/06 , H01J43/08 , H01L21/306 , H01L29/72
CPC分类号： H01J31/501 , H01J1/34
摘要： A transferred-electron photocathode or other opto-electronic device having one light-receiving side and one electronic side, in which multiple photocathodes are processed concurrently on a wafer for front and back side contacts and anti-reflection layers. After the wafer-level processing, the individual cells are diced, and each is placed in a rectangular recess formed in a window body with the light-receptive part of the photocathode facing the window. The integration is aided by several novel processes including coining a chip recess into a window, selective etching of titanium over chromium, and using a single metal sheet member for electrically contacting the photocathode, forming part of the vacuum envelope, and providing an exterior electrical tab.
摘要翻译：具有一个光接收侧和一个电子侧的转移电子光电阴极或其它光电子器件，其中在晶片上同时处理多个光电阴极用于正面和背面接触和抗反射层。在晶片级处理之后，单个单元被切割，并且每个单元被放置在形成在窗体中的矩形凹部中，光电阴极的光接收部分面向窗口。通过几个新颖的工艺来辅助整合，包括将一个芯片凹槽压成窗口，选择性地蚀刻钛上的铬，以及使用单个金属片构件来电接触光电阴极，形成真空外壳的一部分，以及提供外部电气接头。

2. 发明授权

US5512375A Pseudomorphic substrates 失效
标题翻译：假基质
公开(公告)号：US5512375A
公开(公告)日：1996-04-30
申请号：US138454
申请日：1993-10-14
申请人： Roger T. Green , Gary A. Davis , Verle W. Aebi
发明人： Roger T. Green , Gary A. Davis , Verle W. Aebi
IPC分类号： C30B25/02 , C30B25/18 , B32B17/06 , C30B29/40
CPC分类号： C30B25/02 , C30B25/18 , C30B29/40
摘要： High quality epitaxial layers can be grown on a multi-layer substrate which has a crystalline pseudomorphic layer with an exposed surface used for the epitaxial growth. The pseudomorphic layer of the substrate has a thickness at or below the pseudomorphic limit so it will be deformed as stress forces are developed during epitaxial growth of heteroepitaxial structures. A plastically deformable layer is bonded to the pseudomorphic layer, This plastically deformable layer is made of material that plastically flows at epitaxial growth temperatures.
摘要翻译：可以在具有用于外延生长的暴露表面的晶体假晶层的多层衬底上生长高质量外延层。衬底的假晶层具有等于或低于假晶界限的厚度，因此当异质外延结构的外延生长过程中产生应力时，其将会变形。可塑性变形层结合到假晶层上。该塑性变形层由在外延生长温度下塑性流动的材料制成。

3. 发明授权

US08975668B2 Backside-thinned image sensor using Al2 O3 surface passivation 有权
标题翻译：使用Al2 O3表面钝化的背面变薄图像传感器
公开(公告)号：US08975668B2
公开(公告)日：2015-03-10
申请号：US13620476
申请日：2012-09-14
申请人： Kenneth A. Costello , Edward Yin , Michael Wayne Pelczynski , Verle W. Aebi
发明人： Kenneth A. Costello , Edward Yin , Michael Wayne Pelczynski , Verle W. Aebi
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/1464
摘要： A structure and method of manufacture is disclosed for a backside thinned imager that incorporates a conformal, Al2O3, low thermal budget, surface passivation. This passivation approach facilitates fabrication of backside thinned, backside illuminated, silicon image sensors with thick silicon absorber layer patterned with vertical trenches that are formed by etching the exposed back surface of a backside-thinned image sensor to control photo-carrier diffusion and optical crosstalk. A method of manufacture employing conformal, Al2O3, surface passivation approach is shown to provide high quantum efficiency and low dark current while meeting the thermal budget constraints of a finished standard foundry-produced CMOS imager.
摘要翻译：公开了一种用于背面薄化成像器的结构和方法，其包含保形Al 2 O 3，低热预算表面钝化。这种钝化方法有利于制造具有通过蚀刻背面薄化图像传感器的暴露后表面以控制光载流子扩散和光学串扰形成的垂直沟槽的厚硅吸收层的背面变薄的背面照射的硅图像传感器。显示了使用保形Al 2 O 3表面钝化方法的制造方法，以提供高量子效率和低暗电流，同时满足成品标准铸造生产的CMOS成像器的热预算约束。

4. 发明授权

US06657178B2 Electron bombarded passive pixel sensor imaging 有权
标题翻译：电子轰击无源像素传感器成像
公开(公告)号：US06657178B2
公开(公告)日：2003-12-02
申请号：US09784621
申请日：2001-02-14
申请人： Verle W. Aebi
发明人： Verle W. Aebi
IPC分类号： H01J4014
CPC分类号： H01J31/26 , H01J31/49 , H01J2231/50068 , H01L27/14609 , H04N5/33 , H04N5/335 , H04N5/374
摘要： A low light level image directed to a photocathode in a vacuum causes release of electron which bombard a CMOS imager including passive pixel sensors which in turn generates an electronic image which is fed out of the vacuum and is used to create useful images corresponding to the low level input image. A camera and other low light imaging devices are described.
摘要翻译：在真空中指向光电阴极的低光级图像引起电子的释放，该电子轰击包括无源像素传感器的CMOS成像器的电子，该无源像素传感器又产生馈送出真空的电子图像，并且用于创建对应于低级输入图像。描述了照相机和其他低光成像装置。

5. 发明申请

US20130105928A1 BACKSIDE-THINNED IMAGE SENSOR USING Al2O3 SURFACE PASSIVATION 有权
标题翻译：使用Al2O3表面钝化的背面薄膜图像传感器
公开(公告)号：US20130105928A1
公开(公告)日：2013-05-02
申请号：US13620476
申请日：2012-09-14
申请人： Kenneth A. COSTELLO , Edward YIN , Michael Wayne PELCZYNSKI , Verle W. AEBI
发明人： Kenneth A. COSTELLO , Edward YIN , Michael Wayne PELCZYNSKI , Verle W. AEBI
IPC分类号： H01L31/0232 , H01L31/0216
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/1464
摘要： A structure and method of manufacture is disclosed for a backside thinned imager that incorporates a conformal, Al2O3, low thermal budget, surface passivation. This passivation approach facilitates fabrication of backside thinned, backside illuminated, silicon image sensors with thick silicon absorber layer patterned with vertical trenches that are formed by etching the exposed back surface of a backside-thinned image sensor to control photo-carrier diffusion and optical crosstalk. A method of manufacture employing conformal, Al2O3, surface passivation approach is shown to provide high quantum efficiency and low dark current while meeting the thermal budget constraints of a finished standard foundry-produced CMOS imager.
摘要翻译：公开了一种用于背面薄化成像器的结构和方法，其包含保形Al 2 O 3，低热预算表面钝化。这种钝化方法有利于制造具有通过蚀刻背面薄化图像传感器的暴露后表面以控制光载流子扩散和光学串扰形成的垂直沟槽的厚硅吸收层的背面变薄的背面照射的硅图像传感器。显示了使用保形Al 2 O 3表面钝化方法的制造方法，以提供高量子效率和低暗电流，同时满足成品标准铸造生产的CMOS成像器的热预算约束。

6. 发明授权

US5374826A Hybrid photomultiplier tube with high sensitivity 失效
标题翻译：混合光电倍增管，灵敏度高
公开(公告)号：US5374826A
公开(公告)日：1994-12-20
申请号：US91764
申请日：1993-07-14
申请人： Ross A. LaRue , Kenneth A. Costello , Verle W. Aebi
发明人： Ross A. LaRue , Kenneth A. Costello , Verle W. Aebi
IPC分类号： G01N23/225 , G01N23/227 , G01T1/28 , H01J37/073 , H01J43/24 , H01J43/28 , H01J49/06 , H01J31/30
CPC分类号： H01J43/246 , G01N23/2273 , G01T1/28 , H01J43/28
摘要： A focused electron/bombarded (FEB) ion detector comprising an MCP, focusing means, and a collection anode disposed in a detector body. The collector anode includes a diode for receiving the focused output electron beam from the MCP. The gain between the input ion current to the MCP and the detector output signal from the diode is on the order of 1-100 million, depending on the device configuration and applied biasing voltages. A hybrid photomultiplier tube includes a photocathode, a photodiode for collecting and multiplying electrons emitted by the photocathode and providing an output signal and electrodes for focusing the electrons on the photodiode. A vacuum envelope encloses a vacuum region between photocathode and the detector. A conductor disposed on or adjacent to a sidewall of the vacuum envelope reduces the effect of electrical charges on the inside wall of the vacuum envelope on the trajectories of the electrons.
摘要翻译：聚焦电子/轰击（FEB）离子检测器，包括MCP，聚焦装置和设置在检测器主体中的收集阳极。集电极阳极包括用于从MCP接收聚焦的输出电子束的二极管。根据器件配置和施加的偏置电压，MCP输入离子电流与二极管的检测器输出信号之间的增益约为1-100亿。混合光电倍增管包括光电阴极，用于收集和乘积由光电阴极发射的电子并提供输出信号的光电二极管和用于将电子聚焦在光电二极管上的电极。真空封套包围光电阴极和检测器之间的真空区域。设置在真空外壳的侧壁上或与真空外壳的侧壁相邻的导体减小了在电子轨迹上的电荷对真空外壳的内壁的影响。

7. 发明授权

US5268612A Feedback limited microchannel plate 失效
标题翻译：反馈限制微通道板
公开(公告)号：US5268612A
公开(公告)日：1993-12-07
申请号：US724041
申请日：1991-07-01
申请人： Verle W. Aebi , Kenneth A. Costello
发明人： Verle W. Aebi , Kenneth A. Costello
IPC分类号： H01J9/12 , H01J31/50 , H01J43/24 , H01J43/04
CPC分类号： H01J43/246 , H01J31/506
摘要： A low noise microchannel plate limiting feedback includes a conductive deposit on an output side for reducing open areas at an output end of the plate. The microchannel plate can be included in an image intensifier tube.

8. 发明授权

US08421012B2 Low energy portable low-light camera with wavelength cutoff 有权
标题翻译：具有波长截止功能的低能量便携式低光照相机
公开(公告)号：US08421012B2
公开(公告)日：2013-04-16
申请号：US12873225
申请日：2010-08-31
申请人： Verle W. Aebi
发明人： Verle W. Aebi
IPC分类号： H01L31/00
CPC分类号： H01L27/14643 , H01L27/1464 , H01L31/0304 , H01L31/03046 , H01L31/109 , Y02E10/544
摘要： A sensor for night vision applications is provided, wherein the sensor comprises a semiconductor absorption layer of composition that limits long wavelength response cutoff to between 1.25 to 1.4 μm wavelength. The selection of this cutoff frequency provides improved dark current performance, thereby requiring less cooling of the sensor. Consequently, energy consumption is reduced, as the sensor does not require active cooling, so that the sensor is particularly beneficial for mobile night vision applications where battery weight is of high importance.
摘要翻译：提供了一种用于夜视应用的传感器，其中传感器包括将长波长响应截止限制在1.25至1.4μm波长之间的组成半导体吸收层。该截止频率的选择提供了改进的暗电流性能，从而需要较少的传感器冷却。因此，由于传感器不需要主动冷却，所以能量消耗降低，因此传感器对于电池重量非常重要的移动夜视应用尤为有利。

9. 发明申请

US20110049365A1 LOW ENERGY PORTABLE LOW-LIGHT CAMERA WITH WAVELENGTH CUTOFF 有权
标题翻译：低能量便携式低照度相机，具有波长切割
公开(公告)号：US20110049365A1
公开(公告)日：2011-03-03
申请号：US12873225
申请日：2010-08-31
申请人： Verle W. AEBI
发明人： Verle W. AEBI
IPC分类号： H01L25/00
CPC分类号： H01L27/14643 , H01L27/1464 , H01L31/0304 , H01L31/03046 , H01L31/109 , Y02E10/544
摘要： A sensor for night vision applications is provided, wherein the sensor comprises a semiconductor absorption layer of composition that limits long wavelength response cutoff to between 1.25 to 1.4 μm wavelength. The selection of this cutoff frequency provides improved dark current performance, thereby requiring less cooling of the sensor. Consequently, energy consumption is reduced, as the sensor does not require active cooling, so that the sensor is particularly beneficial for mobile night vision applications where battery weight is of high importance.
摘要翻译：提供了一种用于夜视应用的传感器，其中传感器包括将长波长响应截止限制在1.25至1.4μm波长之间的组成半导体吸收层。该截止频率的选择提供了改进的暗电流性能，从而需要较少的传感器冷却。因此，由于传感器不需要主动冷却，所以能量消耗降低，因此传感器对于电池重量非常重要的移动夜视应用尤为有利。

10. 发明授权

US07531826B2 Photocathode structure and operation 有权
标题翻译：光电阴极结构和操作
公开(公告)号：US07531826B2
公开(公告)日：2009-05-12
申请号：US11142805
申请日：2005-06-01
申请人： Kenneth A Costello , Verle W. Aebi
发明人： Kenneth A Costello , Verle W. Aebi
IPC分类号： H01L29/06 , H01L29/12 , H01L27/04 , H01J40/06 , G01J5/20
CPC分类号： H01L31/108 , G02B23/12 , H01L31/103 , H01L31/109
摘要： A novel photocathode employing a rectifying junction is described that permits color imaging extending applications for photocathodes in a variety of instruments and night vision devices.
摘要翻译：描述了采用整流结的新型光电阴极，其允许彩色成像延长了各种仪器和夜视设备中光电阴极的应用。

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