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    • 4. 发明授权
    • Nitride semiconductor light emitting device having a silver p-contact
    • 具有银p接触的氮化物半导体发光器件
    • US06194743B1
    • 2001-02-27
    • US09212150
    • 1998-12-15
    • You KondohSatoshi WatanabeYawara KanekoShigeru NakagawaNorihide Yamada
    • You KondohSatoshi WatanabeYawara KanekoShigeru NakagawaNorihide Yamada
    • H01L3300
    • H01L33/42H01L33/40H01L2224/4847
    • A light emitting device constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver in contact with the p-type semiconductor layer. In the preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconductor materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer is preferably provided over the silver layer. The fixation layer may be a dielectric or a conductor, the choice depending on whether or not the silver layer is transparent.
    • 构造在基板上的发光器件。 该器件包括与衬底接触的n型半导体层,用于产生光的有源层,有源层与n型半导体层电接触。 p型半导体层与有源层电接触,p电极与p型半导体层电接触。 p电极包括与p型半导体层接触的银层。 在本发明的优选实施例中,n型半导体层和p型半导体层由III族氮化物半导体材料构成。 在本发明的一个实施方案中,银层足够薄以使其透明。 在其它实施例中,银层足够厚以反射入射到其上的大部分光。 优选在银层上设置固定层。 固定层可以是电介质或导体,这取决于银层是否透明。