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1. 发明授权

US06829273B2 Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same 失效
标题翻译：氮化物半导体层结构和包含其一部分的氮化物半导体激光器
公开(公告)号：US06829273B2
公开(公告)日：2004-12-07
申请号：US10040328
申请日：2001-12-19
申请人： Hiroshi Amano , Isamu Akasaki , Yawara Kaneko , Norihide Yamada , Tetsuya Takeuchi , Satoshi Watanabe
发明人： Hiroshi Amano , Isamu Akasaki , Yawara Kaneko , Norihide Yamada , Tetsuya Takeuchi , Satoshi Watanabe
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/3215 , H01S5/32341 , H01S5/34333 , H01S2301/173
摘要： The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crystal nitride semiconductor material that includes AlN. The composite layer includes a first sub-layer adjacent the buffer layer and a second sub-layer over the first sub-layer. The single-crystal nitride semiconductor material of the composite layer has a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction in the second sub-layer. The second AlN molar fraction is greater than the first AlN molar fraction. The nitride semiconductor laser comprises a portion of the above-described nitride semiconductor layer structure, and additionally comprises an optical waveguide layer over the composite layer and an active layer over the optical waveguide layer.
摘要翻译：氮化物半导体层结构包括缓冲层和缓冲层上的复合层。缓冲层是包含AlN的低温沉积氮化物半导体材料的层。复合层是包含AlN的单晶氮化物半导体材料层。复合层包括邻近缓冲层的第一子层和第一子层上的第二子层。复合层的单晶氮化物半导体材料在第一子层中具有第一AlN摩尔分数，并且在第二子层中具有第二AlN摩尔分数。第二AlN摩尔分数大于第一AlN摩尔分数。氮化物半导体激光器包括上述氮化物半导体层结构的一部分，并且还包括复合层上的光波导层和光波导层上的有源层。

2. 发明授权

US06690700B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US06690700B2
公开(公告)日：2004-02-10
申请号：US09833243
申请日：2001-04-10
申请人： Tetsuya Takeuchi , Yawara Kaneko , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
发明人： Tetsuya Takeuchi , Yawara Kaneko , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01S500
CPC分类号： H01S5/20 , H01L33/007 , H01L33/0075 , H01S5/2004 , H01S5/32341 , H01S2301/18
摘要： A nitride semiconductor device that comprises a first layer, a second layer and a buffer layer sandwiched between the first layer and the second layer. The second layer is a layer of a single-crystal nitride semiconductor material including AlN and has a thickness greater than the thickness at which cracks would form if the second layer were grown directly on the first layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. Incorporating the nitride semiconductor device into a semiconductor laser diode enables the laser diode to generate coherent light having a far-field pattern that exhibits a single peak.
摘要翻译：一种氮化物半导体器件，包括夹在第一层和第二层之间的第一层，第二层和缓冲层。第二层是包括AlN的单晶氮化物半导体材料的层，并且其厚度大于如果第二层直接在第一层上生长则形成裂纹的厚度。缓冲层是包含AlN的低温沉积氮化物半导体材料的层。将氮化物半导体器件并入半导体激光二极管使得激光二极管能够产生具有单峰的远场图案的相干光。

3. 发明授权

US07262436B2 III-nitride semiconductor light emitting device having a silver p-contact 有权
标题翻译：具有银p接触的III族氮化物半导体发光器件
公开(公告)号：US07262436B2
公开(公告)日：2007-08-28
申请号：US11104310
申请日：2005-04-11
申请人： You Kondoh , Satoshi Watanabe , Yawara Kaneko , Shigeru Nakagawa , Norihide Yamada
发明人： You Kondoh , Satoshi Watanabe , Yawara Kaneko , Shigeru Nakagawa , Norihide Yamada
IPC分类号： H01L29/22
CPC分类号： H01L33/42 , H01L33/40 , H01L2224/4847
摘要： A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver. In a preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconducting materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer may be provided. The fixation layer may be a dielectric or a conductor.
摘要翻译：发光器件包括n型半导体层，用于产生光的有源层，所述有源层与n型半导体层电接触。 p型半导体层与有源层电接触，p电极与p型半导体层电接触。 p电极包括一层银。在本发明的优选实施例中，n型半导体层和p型半导体层由III族氮化物半导体材料构成。在本发明的一个实施方案中，银层足够薄以使其透明。在其它实施例中，银层足够厚以反射入射到其上的大部分光。可以提供固定层。固定层可以是电介质或导体。

4. 发明授权

US06900472B2 Semiconductor light emitting device having a silver p-contact 有权
标题翻译：具有银p接触的半导体发光器件
公开(公告)号：US06900472B2
公开(公告)日：2005-05-31
申请号：US09764024
申请日：2001-01-16
申请人： You Kondoh , Satoshi Watanabe , Yawara Kaneko , Shigeru Nakagawa , Norihide Yamada
发明人： You Kondoh , Satoshi Watanabe , Yawara Kaneko , Shigeru Nakagawa , Norihide Yamada
IPC分类号： H01L33/40 , H01L33/42 , H01L33/00
CPC分类号： H01L33/42 , H01L33/40 , H01L2224/4847
摘要： A light emitting device is constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver in contact with the p-type semiconductor layer. A bonding layer is formed overlying the silver layer to make an electrical connection to the silver layer. The silver layer may be thin and transparent or thicker (greater than 20 nm) and reflective.
摘要翻译：在基板上构造发光器件。该器件包括与衬底接触的n型半导体层，用于产生光的有源层，该有源层与n型半导体层电接触。 p型半导体层与有源层电接触，p电极与p型半导体层电接触。 p电极包括与p型半导体层接触的银层。形成覆盖在银层上的接合层，以形成与银层的电连接。银层可以是薄且透明或更厚（大于20nm）和反射的。

5. 发明授权

US06194743B1 Nitride semiconductor light emitting device having a silver p-contact 有权
标题翻译：具有银p接触的氮化物半导体发光器件
公开(公告)号：US06194743B1
公开(公告)日：2001-02-27
申请号：US09212150
申请日：1998-12-15
申请人： You Kondoh , Satoshi Watanabe , Yawara Kaneko , Shigeru Nakagawa , Norihide Yamada
发明人： You Kondoh , Satoshi Watanabe , Yawara Kaneko , Shigeru Nakagawa , Norihide Yamada
IPC分类号： H01L3300
CPC分类号： H01L33/42 , H01L33/40 , H01L2224/4847
摘要： A light emitting device constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver in contact with the p-type semiconductor layer. In the preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconductor materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer is preferably provided over the silver layer. The fixation layer may be a dielectric or a conductor, the choice depending on whether or not the silver layer is transparent.
摘要翻译：构造在基板上的发光器件。该器件包括与衬底接触的n型半导体层，用于产生光的有源层，有源层与n型半导体层电接触。 p型半导体层与有源层电接触，p电极与p型半导体层电接触。 p电极包括与p型半导体层接触的银层。在本发明的优选实施例中，n型半导体层和p型半导体层由III族氮化物半导体材料构成。在本发明的一个实施方案中，银层足够薄以使其透明。在其它实施例中，银层足够厚以反射入射到其上的大部分光。优选在银层上设置固定层。固定层可以是电介质或导体，这取决于银层是否透明。

6. 发明申请

US20050179051A1 III-Nitride semiconductor light emitting device having a silver p-contact 有权
标题翻译：具有银p接触的III-氮化物半导体发光器件
公开(公告)号：US20050179051A1
公开(公告)日：2005-08-18
申请号：US11104310
申请日：2005-04-11
申请人： You Kondoh , Satoshi Watanabe , Yawara Kaneko , Shigeru Nakagawa , Norihide Yamada
发明人： You Kondoh , Satoshi Watanabe , Yawara Kaneko , Shigeru Nakagawa , Norihide Yamada
IPC分类号： H01L33/40 , H01L33/42 , H01L33/00
CPC分类号： H01L33/42 , H01L33/40 , H01L2224/4847
摘要： A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver. In a preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconducting materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer may be provided. The fixation layer may be a dielectric or a conductor.
摘要翻译：发光器件包括n型半导体层，用于产生光的有源层，所述有源层与n型半导体层电接触。 p型半导体层与有源层电接触，p电极与p型半导体层电接触。 p电极包括一层银。在本发明的优选实施例中，n型半导体层和p型半导体层由III族氮化物半导体材料构成。在本发明的一个实施方案中，银层足够薄以使其透明。在其它实施例中，银层足够厚以反射入射到其上的大部分光。可以提供固定层。固定层可以是电介质或导体。

7. 发明授权

US5814239A Gas-phase etching and regrowth method for Group III-nitride crystals 失效
标题翻译： III族氮化物晶体的气相蚀刻和再生长方法
公开(公告)号：US5814239A
公开(公告)日：1998-09-29
申请号：US684608
申请日：1996-07-19
申请人： Yawara Kaneko , Norihide Yamada
发明人： Yawara Kaneko , Norihide Yamada
IPC分类号： C23F4/00 , H01L21/205 , H01L21/302 , H01L21/306 , H01L21/3065 , H01S5/00 , H01S5/323 , B44C1/22
CPC分类号： H01L21/30621
摘要： A gas-phase etchant is provided. The gas-phase etchant includes at least one halogen in gaseous form and/or at least one halogen halide in gaseous form. A Group III-nitride crystal is heated to a temperature in the range of 500.degree.-900.degree. C. and is etched in a flow of the gas-phase etchant. The gas-phase etchant may additionally include hydrogen. The gas-phase etchant may alternatively be diluted with inert gas, and the Group III-nitride crystal may be etched in a flow of the gas-phase etchant diluted with the inert gas.
摘要翻译：提供气相蚀刻剂。气相蚀刻剂包括至少一种气态卤素和/或至少一种气态卤化物。将III族氮化物晶体加热到500-900℃的温度，并在气相腐蚀剂的流动下进行蚀刻。气相蚀刻剂可另外包括氢。气相蚀刻剂可以替代地用惰性气体稀释，并且可以在用惰性气体稀释的气相蚀刻剂的流中蚀刻III族氮化物晶体。

8. 发明授权

US07800802B2 Hologram recording medium and method for manufacturing same 失效
标题翻译：全息记录介质及其制造方法
公开(公告)号：US07800802B2
公开(公告)日：2010-09-21
申请号：US11989818
申请日：2005-04-07
申请人： Yawara Kaneko , Hideyoshi Horimai
发明人： Yawara Kaneko , Hideyoshi Horimai
IPC分类号： G03H1/02 , G03H1/28 , G11B7/00
CPC分类号： G11B7/0065 , G03H1/0252 , G03H2001/266 , G03H2250/33 , G03H2250/34 , G03H2250/42 , G11B7/00781 , G11B7/0938 , G11B7/24038 , G11B7/24044 , G11B7/26
摘要： A hologram recording medium including a substrate, a hologram recording layer that records an interference pattern formed by a first wavelength beam, a wavelength selecting reflection layer provided between the substrate and the hologram recording layer that reflects the first wavelength beam and transmits a second wavelength beam, a beam absorbing layer provided between the substrate and the wavelength selecting reflection layer that absorbs the first wavelength beam, and an information layer provided between the substrate and the light absorbing layer in which information is recorded and reproduced by the second wavelength beam, a second information layer provided between the substrate and the information layer and a second wavelength selecting reflection layer provided between the information layer and the second information layer that reflects the second wavelength beam and transmits a third wavelength beam.
摘要翻译：一种全息记录介质，包括基板，记录由第一波长光束形成的干涉图案的全息图记录层，设置在基板和反射第一波长光束的全息图记录层之间的波长选择反射层，并透射第二波长光束设置在基板和吸收第一波长光束的波长选择反射层之间的光束吸收层，以及设置在基板和由第二波长光束记录和再现信息的光吸收层之间的信息层，第二设置在所述基板和所述信息层之间的信息层和设置在所述信息层和所述第二信息层之间的反射所述第二波长束并透射第三波长束的第二波长选择反射层。

9. 发明授权

US06238945B1 Method of making P-type group III-nitride semiconductor device having improved P contact 失效
标题翻译：制造具有改善的P接触的P型III族氮化物半导体器件的方法
公开(公告)号：US06238945B1
公开(公告)日：2001-05-29
申请号：US09562494
申请日：2000-05-01
申请人： Yawara Kaneko
发明人： Yawara Kaneko
IPC分类号： H01L2100
CPC分类号： H01L33/40 , H01L33/325 , H01L33/44 , H01S5/32341
摘要： A Group III-nitride semiconductor device that has a low voltage-drop p-contact and comprises a substrate layer, a metal electrode and an intermediate layer sandwiched between the substrate layer and the metal electrode. The substrate layer is a layer of a p-type Group III-nitride semiconductor, and the intermediate layer includes a Group III-nitride semiconductor in which atoms of a Group V element other than nitrogen have been substituted for a fraction of nitrogen atoms. The Group III-nitride semiconductor device is made by providing a substrate including a p-type Group III-nitride semiconductor having an exposed surface. Atoms of a Group V element other than nitrogen are substituted for a fraction of the nitrogen atoms of the p-type Group III-nitride semiconductor to form an intermediate layer extending into the p-type Group III-nitride semiconductor from the exposed surface. Metal is then deposited on the exposed surface to form an electrode in electrical contact with the intermediate layer.
摘要翻译：具有低压降p型接触的III族氮化物半导体器件，其包含衬底层，金属电极和夹在衬底层和金属电极之间的中间层。衬底层是p型III族氮化物半导体层，中间层包括III族氮化物半导体，其中除了氮之外的第V族元素的原子已被氮原子的一部分代替。 III族氮化物半导体器件通过提供包括具有暴露表面的p型III族氮化物半导体的衬底制成。除了氮之外的第V族元素的原子代替p型III族氮化物半导体的一部分氮原子以形成从暴露表面延伸到p型III族氮化物半导体中的中间层。然后将金属沉积在暴露的表面上以形成与中间层电接触的电极。

10. 发明授权

US6046465A Buried reflectors for light emitters in epitaxial material and method for producing same 失效
标题翻译：用于外延材料中的发光体的埋地反射器及其制造方法
公开(公告)号：US6046465A
公开(公告)日：2000-04-04
申请号：US62368
申请日：1998-04-17
申请人： Shih-Yuan Wang , Yong Chen , Scott W. Corzine , R. Scott Kern , Carrie C. Coman , Michael R. Krames , Frederick A. Kish, Jr. , Yawara Kaneko
发明人： Shih-Yuan Wang , Yong Chen , Scott W. Corzine , R. Scott Kern , Carrie C. Coman , Michael R. Krames , Frederick A. Kish, Jr. , Yawara Kaneko
IPC分类号： H01L33/10 , H01L33/12 , H01L33/24 , H01S5/00 , H01S5/02 , H01S5/14 , H01S5/183 , H01S5/187 , H01S5/323 , H01S5/343 , C30B19/00 , H01L33/00
CPC分类号： H01L33/24 , H01L33/10 , H01L33/12 , H01S5/18341 , H01S5/0205 , H01S5/0213 , H01S5/0425 , H01S5/18305 , H01S5/18369 , H01S5/32341
摘要： A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.
摘要翻译：外延横向生长层中的掩埋反射体50形成发光器件的一部分，并允许制造基本上低的位错密度的半导体材料。横向生长的材料的位错缺陷密度低，在掩埋反射器上生长，使其适用于高质量的光发射器件，并且嵌入式反射器消除了开发另外的反射器的需要。

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