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1. 发明授权

US08695231B2 Method for controlling drying of clothes and dryer for clothes 有权
标题翻译：衣物烘干机烘干方法
公开(公告)号：US08695231B2
公开(公告)日：2014-04-15
申请号：US12922289
申请日：2009-03-06
申请人： Yasuyo Sugimoto , Tsutomu Katou , Tetsuya Ueda , Takuya Kotanagi , Ippei Oda , Kazuhiro Taniguchi
发明人： Yasuyo Sugimoto , Tsutomu Katou , Tetsuya Ueda , Takuya Kotanagi , Ippei Oda , Kazuhiro Taniguchi
IPC分类号： F26B3/02
CPC分类号： D06F58/28 , D06F2058/2819 , D06F2058/2841 , D06F2058/2845
摘要： A control method for drying clothes is disclosed. The method finds a difference in surface temperature between clothes catching air blow and the same clothes catching no air blow, and then determines a degree of dryness in the clothes based on the difference. Based on the degree of dryness, the method determines at what time heating should start.
摘要翻译：公开了一种用于干燥衣物的控制方法。该方法发现衣服吸气之间的表面温度与没有吹气的同一衣服之间的表面温度差异，然后基于差异来确定衣服的干燥程度。根据干燥度，该方法确定加热开始的时间。

2. 发明申请

US20110047812A1 METHOD FOR CONTROLLING DRYING OF CLOTHES AND DRYER FOR CLOTHES 有权
标题翻译：用于控制衣服干燥和衣物干燥的方法
公开(公告)号：US20110047812A1
公开(公告)日：2011-03-03
申请号：US12922289
申请日：2009-03-06
申请人： Yasuyo Sugimoto , Tsutomu Katou , Tetsuya Ueda , Takuya Kotanagi , Ippei Oda , Kazuhiro Taniguchi
发明人： Yasuyo Sugimoto , Tsutomu Katou , Tetsuya Ueda , Takuya Kotanagi , Ippei Oda , Kazuhiro Taniguchi
IPC分类号： F26B19/00 , F26B7/00 , F24F13/06
CPC分类号： D06F58/28 , D06F2058/2819 , D06F2058/2841 , D06F2058/2845
摘要： A control method for drying clothes is disclosed. The method finds a difference in surface temperature between clothes catching air and the same clothes catching no air, and then determines a degree of dryness in the clothes based on the difference. Based on the degree of dryness, the method determines at what time heating should start.
摘要翻译：公开了一种用于干燥衣物的控制方法。该方法发现衣物吸入空气与没有空气的衣物之间的表面温度差异，然后根据差异确定衣物的干燥程度。根据干燥度，该方法确定加热开始的时间。

3. 发明授权

US08669833B2 Three-dimensional metamaterial having function of allowing and inhibiting propagation of electromagnetic waves 有权
标题翻译：具有允许和禁止电磁波传播的功能的三维超材料
公开(公告)号：US08669833B2
公开(公告)日：2014-03-11
申请号：US13375945
申请日：2010-06-03
申请人： Tetsuya Ueda
发明人： Tetsuya Ueda
IPC分类号： H01P1/205 , H01P7/10
CPC分类号： H01P7/10 , G02B1/002 , G02B5/3058 , H01P1/20 , H01P1/2084
摘要： In a metamaterial, a dielectric layer includes a host medium and dielectric bodies disposed in rows with predetermined intervals therebetween is sandwiched between a pair of conductive mesh plates each having holes, thereby forming a functional layer including dielectric resonators corresponding to the dielectric bodies. The metamaterial is configured by laminating the functional layers. The holes and the dielectric resonators are positioned coaxially and an electromagnetic wave is propagated in each of the functional layers in a propagation direction perpendicular to a multi-layered laminate surface such that the metamaterial function as a left-handed metamaterial in relation to the propagation direction perpendicular to the multi-layered surface.
摘要翻译：在超材料中，电介质层包括主介体，并且以一定间隔设置成行的电介质体夹在一对具有孔的导电网板之间，从而形成包括对应于介电体的介电谐振器的功能层。超材料通过层压功能层而构成。孔和介质谐振器同轴地定位，并且电磁波在垂直于多层叠层表面的传播方向上在每个功能层中传播，使得超材料相对于传播方向作为左旋超材料垂直于多层表面。

4. 发明授权

US08294538B2 Transmission line microwave apparatus including at least one non-reciprocal transmission line part between two parts 有权
标题翻译：传输线微波装置包括两部分之间的至少一个不可逆传输线部分
公开(公告)号：US08294538B2
公开(公告)日：2012-10-23
申请号：US12530102
申请日：2008-03-05
申请人： Tetsuya Ueda
发明人： Tetsuya Ueda
IPC分类号： H01P3/08
CPC分类号： H01Q1/38 , H01P1/203 , H01P1/207 , H01P1/32 , H01Q13/206
摘要： A transmission line microwave apparatus includes at least one nonreciprocal transmission line part, which includes a series branch circuit equivalently including a capacitive element and a shunt branch circuit equivalently including an inductive element. The nonreciprocal transmission line part has gyrotropic characteristic by being magnetized in a magnetization direction different from the propagation direction of a microwave, and has an asymmetric structure to a plane formed by the propagation direction and the magnetization direction. The nonreciprocal transmission line part has a propagation constant and an operating frequency set in a dispersion curve that represents a relation between the propagation constant and the operating frequency so that the propagation constant in the forward direction and the propagation constant in the backward direction have nonreciprocal phase characteristics different from each other. A microwave transmission line is constituted by cascade-connecting at least one non-reciprocal transmission line part between first and second ports.
摘要翻译：传输线微波装置包括至少一个不可逆传输线部分，其包括等效地包括电容元件的串联分支电路和等效地包括电感元件的分流分支电路。不可逆传输线部分通过在与微波的传播方向不同的磁化方向上磁化而具有陀螺特性，并且具有与由传播方向和磁化方向形成的平面不对称的结构。不可逆传输线部分具有传播常数和在表示传播常数与工作频率之间的关系的色散曲线中设定的工作频率，使得正向传播常数和反向传播常数具有非相互相位特征彼此不同。微波传输线通过级联连接第一和第二端口之间的至少一个不可逆传输线部分而构成。

5. 发明授权

US08034707B2 Method for fabricating semiconductor device and semiconductor device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US08034707B2
公开(公告)日：2011-10-11
申请号：US12897416
申请日：2010-10-04
申请人： Tetsuya Ueda
发明人： Tetsuya Ueda
IPC分类号： H01L21/4763
CPC分类号： H01L21/76801 , H01L21/76802 , H01L21/7682 , H01L21/76849 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A method for fabricating a semiconductor device includes the steps of forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在第一绝缘膜中间隔地形成多个下互连; 去除位于下互连之间的第一绝缘膜的一部分，从而形成互连互连间隙; 在所述第一绝缘膜上形成第二绝缘膜，其中所述下互连和互连互连间隙形成为使得从所述互连互连间隙形成气隙; 以及在所述第二绝缘膜中形成连接到所述下部互连中的一个的连接部分和连接到所述连接部分的上部互连件。连接部分形成为连接到不邻近气隙的下互连中的一个。

6. 发明授权

US07622807B2 Semiconductor device with a low dielectric constant film between lower interconnections 有权
标题翻译：在低互连之间具有低介电常数膜的半导体器件
公开(公告)号：US07622807B2
公开(公告)日：2009-11-24
申请号：US12277933
申请日：2008-11-25
申请人： Tetsuya Ueda
发明人： Tetsuya Ueda
IPC分类号： H01L29/40
CPC分类号： H01L21/76801 , H01L21/76802 , H01L21/7682 , H01L21/76849 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A method for fabricating a semiconductor device includes the steps of: forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在第一绝缘膜中间隔地形成多个下互连; 去除位于下互连之间的第一绝缘膜的一部分，从而形成互连互连间隙; 在所述第一绝缘膜上形成第二绝缘膜，其中所述下互连和互连互连间隙形成为使得从所述互连互连间隙形成气隙; 以及在所述第二绝缘膜中形成连接到所述下部互连中的一个的连接部分和连接到所述连接部分的上部互连件。连接部分形成为连接到不邻近气隙的下互连中的一个。

7. 发明授权

US07265450B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07265450B2
公开(公告)日：2007-09-04
申请号：US10900272
申请日：2004-07-28
申请人： Takato Handa , Hiroyuki Umimoto , Tetsuya Ueda
发明人： Takato Handa , Hiroyuki Umimoto , Tetsuya Ueda
IPC分类号： H01L23/48
CPC分类号： H01L21/76843 , H01L21/76801 , H01L21/76816 , H01L21/76832 , H01L21/76834 , H01L21/76865 , H01L21/76877 , H01L21/76886 , H01L23/5283 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An inventive semiconductor device includes: a lower interlayer dielectric film provided on a substrate; a lower interconnect made up of a lower barrier metal layer formed along a wall surface of a lower interconnect groove in the lower interlayer dielectric film, and a copper film; and an upper plug and an upper interconnect. The upper plug passes through a silicon nitride film and comes into contact with the copper film of the lower interconnect. The lower interconnect is provided with a large number of convex portions buried in concave portions of the lower interconnect groove. Thus, voids in the lower interconnect are also gettered by the convex portions. Accordingly, the concentration of voids in the contact area between the lower interconnect and the upper plug is relieved, and an increase in contact resistance is suppressed.
摘要翻译：本发明的半导体器件包括：设置在基板上的下层间绝缘膜; 由沿下层间电介质膜的下互连槽的壁面形成的下阻挡金属层和铜膜构成的下互连件; 以及上部插头和上部互连件。上塞通过氮化硅膜并与下互连的铜膜接触。下部互连件设置有埋在下部互连槽的凹部中的大量凸部。因此，下部互连件中的空隙也被凸起部分吸收。因此，下部布线和上部插塞之间的接触区域中的空隙的浓度被释放，并且抑制了接触电阻的增加。

8. 发明授权

US06972119B2 Apparatus for forming hydrogen 失效
标题翻译：用于形成氢的装置
公开(公告)号：US06972119B2
公开(公告)日：2005-12-06
申请号：US10168854
申请日：2000-12-27
申请人： Kiyoshi Taguchi , Takeshi Tomizawa , Kunihiro Ukai , Toshiyuki Shono , Koichiro Kitagawa , Tetsuya Ueda , Seiji Fujihara , Yutaka Yoshida
发明人： Kiyoshi Taguchi , Takeshi Tomizawa , Kunihiro Ukai , Toshiyuki Shono , Koichiro Kitagawa , Tetsuya Ueda , Seiji Fujihara , Yutaka Yoshida
IPC分类号： B01J8/04 , B01J19/24 , B01J23/40 , B01J23/63 , B01J23/72 , B01J35/00 , C01B3/16 , C01B3/48 , C01B3/58 , C10K3/04 , H01M8/06 , B01J3/00
CPC分类号： H01M8/0631 , B01J8/0453 , B01J8/0457 , B01J8/0488 , B01J8/0496 , B01J19/2485 , B01J23/40 , B01J23/63 , B01J23/72 , B01J35/0006 , B01J2208/00061 , B01J2208/00194 , B01J2208/00504 , B01J2208/00716 , B01J2219/0004 , B01J2219/00198 , B01J2219/002 , B01J2219/00202 , B01J2219/00213 , B01J2219/00231 , C01B3/16 , C01B3/48 , C01B3/583 , C01B3/586 , C01B2203/0233 , C01B2203/0283 , C01B2203/0288 , C01B2203/044 , C01B2203/0445 , C01B2203/047 , C01B2203/066 , C01B2203/0811 , C01B2203/0816 , C01B2203/085 , C01B2203/0866 , C01B2203/0877 , C01B2203/0883 , C01B2203/0894 , C01B2203/1023 , C01B2203/1041 , C01B2203/1064 , C01B2203/107 , C01B2203/1076 , C01B2203/1082 , C01B2203/1223 , C01B2203/1241 , C01B2203/1247 , C01B2203/1604 , C01B2203/1609 , C01B2203/1619 , C01B2203/1661 , C01B2203/169 , C01B2203/1695 , C01B2203/82 , C10K3/04 , Y02P20/52
摘要： A hydrogen producing apparatus comprising: a reforming section having a reforming catalyst which causes a reaction between a carbon-containing organic compound as a feedstock and water; a feedstock supply section for supplying the feedstock to the reforming section; a water supply section for supplying water to the reforming section; a heating section for heating the reforming catalyst; a shifting section having a shift catalyst which causes a shift reaction between carbon monoxide and water contained in a reformed gas supplied from the reforming section; and a purifying section having a purifying catalyst which causes oxidation or methanation of carbon monoxide contained in a gas supplied from the shifting section, wherein the shift catalyst comprises a platinum group metal and a metal oxide.
摘要翻译：一种制氢装置，其特征在于，包括：重整部，其具有使作为原料的含碳有机化合物与水发生反应的重整催化剂; 原料供给部，用于将原料供给至重整部; 供水部，其向所述重整部供给水; 用于加热所述重整催化剂的加热部分; 具有变换催化剂的换档部分，其引起从重整部分供应的重整气体中包含的一氧化碳和水之间的转化反应; 以及净化部，其具有使从所述变速部供给的气体中含有的一氧化碳发生氧化或甲烷化的净化催化剂，所述变换催化剂含有铂族金属和金属氧化物。

9. 发明授权

US06904337B2 Power generation control system, power generation control method, program, and medium 失效
标题翻译：发电控制系统，发电控制方法，程序和介质
公开(公告)号：US06904337B2
公开(公告)日：2005-06-07
申请号：US10148845
申请日：2001-10-01
申请人： Tetsuya Ueda , Osamu Ogawa , Jiro Suzuki , Shinji Miyauchi
发明人： Tetsuya Ueda , Osamu Ogawa , Jiro Suzuki , Shinji Miyauchi
IPC分类号： H01M8/04 , H01M16/00 , H02J3/38 , H02J7/34 , G05B11/01
CPC分类号： H02J3/00 , H01M8/04604 , H01M8/04626 , H01M8/0494 , H01M8/04947 , H01M8/04955 , H01M8/04992 , H01M16/006 , H02J3/14 , H02J3/38 , H02J7/34 , H02J2001/004
摘要： It has been difficult to reduce a waste of energy in a fuel cell power generating process when, for example, a temporary rise or drop of a power load occurs. A fuel cell power generation system includes: load detection means of detecting power requested by a load; and output control means of accumulating a time at which a detected power requested by the load is equal to or larger than a predetermined value when a fuel cell body does not generate power to be supplied to the load, and allowing the fuel cell body to start generating power to be supplied to the load according to a predetermined rule based on an accumulation result.
摘要翻译：当例如发生电力负载的暂时上升或下降时，难以减少燃料电池发电过程中的能量浪费。燃料电池发电系统包括：负载检测装置，用于检测由负载请求的电力; 以及输出控制单元，其在燃料电池单元不产生供给负载的电力的同时累积由负载请求的检测电力等于或大于预定值的时间，并允许燃料电池单元启动基于积累结果，根据预定规则产生供应给负载的电力。

10. 发明授权

US06300242B1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06300242B1
公开(公告)日：2001-10-09
申请号：US09560299
申请日：2000-04-27
申请人： Tetsuya Ueda , Eiji Tamaoka , Nobou Aoi , Hideo Nakagawa
发明人： Tetsuya Ueda , Eiji Tamaoka , Nobou Aoi , Hideo Nakagawa
IPC分类号： H01L214763
CPC分类号： H01L21/76897 , H01L21/7682 , H01L21/76838 , H01L21/76879 , H01L21/76885 , H01L21/76886
摘要： After a first metal film and a first interlayer insulating film are deposited successively on an insulating film on a semiconductor substrate, a via hole is formed in the first interlayer insulating film. A second metal film is grown in the via hole to form a via contact composed of the second metal film, while a recessed portion is formed over the via contact in the via hole. A cap layer composed of a material different from the material of the first metal film is formed in the recessed portion. Then, the first metal film is patterned by using a mask pattern for forming a lower interconnect and a cap layer as a mask, whereby a lower interconnect is formed.
摘要翻译：在第一金属膜和第一层间绝缘膜依次沉积在半导体衬底上的绝缘膜上之后，在第一层间绝缘膜中形成通孔。在通孔中生长第二金属膜以形成由第二金属膜构成的通孔接触，同时在通孔中的通孔接触件上方形成凹部。在凹部中形成由与第一金属膜的材料不同的材料构成的盖层。然后，通过使用用于形成下部布线的掩模图案和作为掩模的盖层来对第一金属膜进行图案化，从而形成下部互连。

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