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1. 发明授权

US4028649A Surface acoustic wave filter 失效
标题翻译：表面声波滤波器
公开(公告)号：US4028649A
公开(公告)日：1977-06-07
申请号：US642345
申请日：1975-12-19
申请人： Yasutoshi Komatsu , Yuzuru Yanagisawa
发明人： Yasutoshi Komatsu , Yuzuru Yanagisawa
IPC分类号： H03H9/02 , H03H9/145 , H03H9/64 , H03H9/04 , H01L41/10 , H03H9/26 , H03H9/32
CPC分类号： H03H9/6496 , H03H9/02842 , H03H9/14547 , H03H9/14564
摘要： A surface acoustic wave filter having a piezo-electric substrate with a major surface and input and output transducers, each haing a plurality of finger electrodes formed on the major surface to define a propagation path for surface acoustic waves. Finger electrodes of one of the transducers have a step-like configuration to divide the surface wave propagation path into a plurality of surface wave propagation channels. The phase differences of the channels and the length of the steps of the finger electrodes are selected to minimize the multiple reflection echo between the input and output transducers to reduce ripples in the pass band.
摘要翻译：一种表面声波滤波器，具有具有主表面的压电基板和输入和输出换能器，每个转子形成在主表面上形成的多个指状电极，以限定表面声波的传播路径。换能器之一的指状电极具有阶梯状构造以将表面波传播路径分割成多个表面波传播通道。选择通道的相位差和手指电极的台阶长度以最小化输入和输出换能器之间的多重反射回波，以减少通带中的波纹。

2. 发明授权

US6084274A Semiconductor memory cell and its fabrication process 失效
标题翻译：半导体存储单元及其制造工艺
公开(公告)号：US6084274A
公开(公告)日：2000-07-04
申请号：US936761
申请日：1997-09-24
申请人： Mikio Mukai , Yutaka Hayashi , Yasutoshi Komatsu
发明人： Mikio Mukai , Yutaka Hayashi , Yasutoshi Komatsu
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94
CPC分类号： H01L27/108
摘要： A semiconductor memory cell includes a read-out transistor of a first conductivity type which has source/drain regions constituted by a second conductive region and a third semiconducting region, a channel forming region constituted by a surface region of a second semiconducting region, and a conductive gate formed on a barrier layer; a switching transistor of a second conductivity type which has source/drain regions constituted by a first conductive region and the second semiconducting region, a channel forming region constituted by a surface region of a first semiconducting region, and a conductive gate formed on a barrier layer; and a current controlling junction-field-effect transistor of a first conductivity type which has gate regions constituted by a third conductive region and a portion of the second semiconducting region, a channel region constituted by a portion of the third semiconducting region, and one source/drain region extended from one end of the channel region, being constituted by a portion of the third semiconducting region, and another source/drain region extended from the other end of the channel region, being constituted by a portion of the third semiconducting region.
摘要翻译：半导体存储单元包括第一导电类型的读出晶体管，其具有由第二导电区域和第三半导体区域构成的源极/漏极区域，由第二半导体区域的表面区域构成的沟道形成区域，以及导电栅极形成在阻挡层上; 第二导电类型的开关晶体管，其具有由第一导电区域和第二半导体区域构成的源极/漏极区域，由第一半导体区域的表面区域构成的沟道形成区域和形成在阻挡层上的导电栅极 ; 以及第一导电类型的电流控制结场效应晶体管，其具有由第三导电区域和第二半导体区域的一部分构成的栅极区域，由第三半导体区域的一部分构成的沟道区域和一个源极漏极区域由沟道区域的一部分延伸，由第三半导体区域的一部分构成，另一个源极/漏极区域从沟道区域的另一端延伸，由第三半导体区域的一部分构成。

3. 发明授权

US4488109A Phase detectors for detecting a mutual phase difference between two signals 失效
标题翻译：用于检测两个信号之间的相位差的相位检测器
公开(公告)号：US4488109A
公开(公告)日：1984-12-11
申请号：US456503
申请日：1983-01-07
申请人： Takashi Otobe , Yasutoshi Komatsu , Yoshikazu Murakami
发明人： Takashi Otobe , Yasutoshi Komatsu , Yoshikazu Murakami
IPC分类号： H03D9/04 , H03D13/00 , G01R25/00
CPC分类号： H03D13/007 , H03D13/00
摘要： A phase detector for detecting a mutual phase difference between two signals, such as first and second microwave signals, comprises first and second signal paths for being supplied with first and second input signals of the same frequency, respectively, and providing with a predetermined additional mutual phase difference between the first and second input signals at their output ends and a field effect transistor having a pair of input electrodes connected to the output ends of the first and second signal paths, respectively, and an output electrode from which an output signal representing a mutual phase difference which the first and second input signals have originally therebetween is derived. The first and second input signals at the input electrodes of the field effect transistor have the original mutual phase difference which is to be detected and the predetermined additional mutual phase difference added by the first and second signal paths therebetween. The field effect transistor is biased to operate with a gate bias voltage nearly equal to a pinch-off voltage thereof. In order to establish such biasing state without reducing the operational gain of the field effect transistor, a biasing resistance connected to the source of the field effect transistor is selected to be low and a current source is provided for supplying an external biasing current to the biasing resistance, thereby to produce the gate bias voltage required.
摘要翻译：用于检测诸如第一和第二微波信号的两个信号之间的相互相位差的相位检测器包括分别被提供有相同频率的第一和第二输入信号的第一和第二信号路径，并且提供预定的附加相互在其输出端处的第一和第二输入信号之间的相位差和分别连接到第一和第二信号路径的输出端的一对输入电极的场效应晶体管和输出电极，输出信号表示导出第一和第二输入信号之间的相互相位差。场效应晶体管的输入电极处的第一和第二输入信号具有待检测的原始相位差和由它们之间的第一和第二信号路径相加的预定附加相位差。场效应晶体管被偏置以以几乎等于其夹断电压的栅极偏置电压工作。为了在不降低场效应晶体管的操作增益的情况下建立这种偏置状态，连接到场效应晶体管的源极的偏置电阻被选择为低，并且提供电流源以向偏置电压提供外部偏置电流电阻，从而产生所需的栅极偏置电压。

4. 发明授权

US5969564A Insulated-gate field effect transistor and method for driving thereof 失效
标题翻译：绝缘栅场效应晶体管及其驱动方法
公开(公告)号：US5969564A
公开(公告)日：1999-10-19
申请号：US19555
申请日：1998-02-06
申请人： Yasutoshi Komatsu , Yutaka Hayashi
发明人： Yasutoshi Komatsu , Yutaka Hayashi
IPC分类号： H01L29/78 , H01L21/336 , H01L21/84 , H01L27/02 , H01L27/12 , H01L29/10 , H01L29/786 , H03K3/01
CPC分类号： H01L29/78696 , H01L21/84 , H01L27/0218 , H01L27/1203 , H01L29/1087 , H01L29/66772 , H01L29/78648
摘要： An insulated-gate field effect transistor comprising a channel forming region, source/drain regions, a gate region, a bias supplying means, and a capacitive element, wherein a potential for controlling a gate threshold voltage of the insulated-gate field effect transistor in an off-state thereof is applied to the channel forming region through the bias supplying means, and a signal having approximately the same phase as a phase of a signal supplied to the gate region is supplied to the channel forming region through the capacitive element.
摘要翻译：一种绝缘栅场效应晶体管，包括沟道形成区，源极/漏极区，栅极区，偏压供应装置和电容元件，其中用于控制绝缘栅场效应晶体管的栅极阈值电压的电位通过偏压供给装置向通道形成区域施加截止状态，并且通过电容元件向沟道形成区域提供具有与提供给栅极区域的信号的相位大致相同相位的信号。

5. 发明授权

US4730224A Rotary coupler 失效
标题翻译：旋转联轴器
公开(公告)号：US4730224A
公开(公告)日：1988-03-08
申请号：US793128
申请日：1985-10-30
申请人： Yasutoshi Komatsu
发明人： Yasutoshi Komatsu
IPC分类号： H01P5/02 , G11B5/02 , H01F38/14 , H01P1/06 , H01P5/12 , H03C7/02 , G11B15/14
CPC分类号： H01P1/068 , H01F2038/143
摘要： A rotary coupler is disclosed, in which a rotor and a non-rotor are provided on their facing surfaces with microstrip lines which are disposed along circles concentric with the axis of the rotor and facing one another. High frequency signals are transferred between the microstrip line on the side of the rotor and the microstrip line on the side of the non-rotor.
摘要翻译：公开了一种旋转耦合器，其中转子和非转子在其相对表面上设置有微带线，微带线沿着与转子的轴线同心并且彼此面对的圆环设置。高频信号在转子侧的微带线与非转子侧的微带线之间传递。

6. 发明授权

US6104639A Memory cell with stored charge on its gate and process for the manufacture thereof 失效
标题翻译：在其门上具有存储电荷的存储器单元及其制造方法
公开(公告)号：US6104639A
公开(公告)日：2000-08-15
申请号：US998281
申请日：1997-12-24
申请人： Yutaka Hayashi , Mikio Mukai , Yasutoshi Komatsu
发明人： Yutaka Hayashi , Mikio Mukai , Yasutoshi Komatsu
IPC分类号： G11C11/401 , G11C11/402 , G11C11/404 , H01L21/8247 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , G11C16/04
CPC分类号： G11C11/404 , H01L27/108
摘要： A memory cell with a stored charge on its gate, comprising (A) a channel forming region, (B) a first gate formed on an insulation layer formed on the surface of the channel forming region, the first gate and the channel forming region facing each other through the insulation layer, (C) a second gate capacitively coupled with the first gate, (D) source/drain regions formed in contact with the channel forming region, one source/drain region being spaced from the other, and (E) a non-linear resistance element having at least two ends with one end connected to the first gate.
摘要翻译：一种在其栅极上具有存储电荷的存储单元，包括（A）沟道形成区，（B）形成在形成在沟道形成区的表面上的绝缘层上的第一栅极，第一栅极和沟道形成区域面对彼此通过绝缘层，（C）与第一栅极电容耦合的第二栅极，（D）与沟道形成区域接触形成的源极/漏极区域，一个源极/漏极区域与另一个间隔开，（E ）具有至少两端的非线性电阻元件，其一端连接到第一栅极。

7. 发明授权

US4149127A Dielectric resonator stabilized micro-strip oscillators 失效
标题翻译：介质谐振器稳定的微带振荡器
公开(公告)号：US4149127A
公开(公告)日：1979-04-10
申请号：US871141
申请日：1978-01-20
申请人： Yoshikazu Murakami , Yasutoshi Komatsu
发明人： Yoshikazu Murakami , Yasutoshi Komatsu
IPC分类号： H03B5/04 , H03B5/18
CPC分类号： H03B5/1876 , H03B2200/0024 , H03B2200/0028 , H03B5/04 , H03B5/1852
摘要： Dielectric resonator stabilized micro-strip oscillators in which micro-strip lines are provided to the first, second and third terminals of the active element for oscillation and in which a dielectric resonator coupled at a predetermined position to one of the micro-strip lines which is not used as an output terminal is disclosed. In the integrated microwave oscillator, there is an active element for oscillation such, for example, as GaAs-FET having first, second and third terminals. Micro-strip lines connect to the first and third terminals, and a micro-strip line connected between the first and third terminals form a feedback circuit, together with the first mentioned micro-strip lines. A dielectric resonator is coupled to one of these micro-strip lines which is not used as an output terminal at a predetermined location.
摘要翻译：介质谐振器稳定的微带振荡器，其中微带线被提供到用于振荡的有源元件的第一，第二和第三端子，并且其中介电谐振器在预定位置耦合到微带线之一，未被用作输出端子被公开。在集成微波振荡器中，存在用于振荡的有源元件，例如具有第一，第二和第三端子的GaAs-FET。微带线连接到第一和第三端子，连接在第一和第三端子之间的微带线与前述的微带线一起形成反馈电路。介质谐振器耦合到这些微带线之一，其不用作预定位置处的输出端子。

8. 发明授权

US06327555B1 Semiconductor simulation method 失效
标题翻译：半导体仿真方法
公开(公告)号：US06327555B1
公开(公告)日：2001-12-04
申请号：US09300283
申请日：1999-04-27
申请人： Shunkichi Shimizu , Mikio Mukai , Yasutoshi Komatsu
发明人： Shunkichi Shimizu , Mikio Mukai , Yasutoshi Komatsu
IPC分类号： G06F1750
CPC分类号： G06F17/5018
摘要： Impurity profiles Pi1 and Ps1 are determined for the same conditions by a reference acquiring means and a simulation capable of producing a result faster than the reference acquiring means, respectively. Errors between the impurity profile Pi1 determined by the reference acquiring means and the impurity profile Ps1 determined by the simulation are determined. An impurity profile Psx is calculated for another kind of conditions by the simulation, and a new impurity profile Psx′ is calculated by correcting the impurity profile Psx so as to reflect the errors.
摘要翻译：通过参考获取装置和能够比参考获取装置分别产生更快的结果的模拟来确定相同条件下的杂质分布Pi1和Ps1。由参考获取装置确定的杂质分布Pi1与通过模拟确定的杂质分布Ps1之间的误差被确定。通过模拟计算另一种条件的杂质分布Psx，通过校正杂质分布Psx来计算新的杂质分布Psx'，以反映误差。

9. 发明授权

US5192923A Rotary coupler 失效
标题翻译：旋转联轴器
公开(公告)号：US5192923A
公开(公告)日：1993-03-09
申请号：US714015
申请日：1991-06-12
申请人： Yasutoshi Komatsu
发明人： Yasutoshi Komatsu
IPC分类号： G11B5/02 , H01P1/06
CPC分类号： H01P1/068
摘要： Reception and transmission of radio frequency signals is performed between the rotary portion and the stationary portion via an electromagnetically coupled portion in which a microstrip formed along substantial one lap of the circumference having a length equivalent to an odd multiple of substantially 1/2 of the electrical wave length of the transmitted radio frequency signal is electromagnetically coupled with a microstrip having a length equivalent to an add multiple of substantially 1/4 of the electrical wave length of the radio frequency signal.
摘要翻译：通过电磁耦合部分在旋转部分和静止部分之间进行射频信号的接收和发送，其中沿着圆周的实质上一圈重叠形成的微带，其长度等于电气的大致1/2的奇数倍发射的射频信号的波长与具有等于射频信号的电波长度的1/4的相加倍数的微带电磁耦合。

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