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    • 5. 发明授权
    • Photomultiplier
    • 光电倍增管
    • US5561347A
    • 1996-10-01
    • US318291
    • 1994-10-05
    • Kimitsugu NakamuraHiroyuki HanaiTakeo HashimotoShinji SuzukiYasushi WataseMasumi Tachino
    • Kimitsugu NakamuraHiroyuki HanaiTakeo HashimotoShinji SuzukiYasushi WataseMasumi Tachino
    • H01J43/04H01J43/06H01J40/00H01J43/18H01J43/20
    • H01J43/04H01J43/06
    • There is provided a photomultiplier in which a transmittance of an incident light and a photosensitivity is high and a hysteresis characteristic is excellent. Therefore, in the present invention, a photocathode 16, dynodes 17a to 17c and an anode 18 are supported between insulating material substrates 12a and 12b provided in a glass bulb 11. A transparent conductive film 19 is formed on an inside wall surface of a light entrance portion 15. The transparent conductive film 19 electrically contacts with a pad 20 which is led through a terminal 14 to the outside. The same potential as the photocathode 12 is applied through the pad 20 to the transparent conductive film 19. The incident light directly impinges on the photocathode 16 through the glass bulb 11 and the transparent conductive film 19 at a place corresponding to the light entrance portion 15. As a result, the incident light reaches the photocathode 12 with not being interfered at all, and the transmittance of the incident light is improved. Since a predetermined potential is applied to the transparent conductive film 19, the change of the potential of the inside wall surface of the glass bulb 11 is performed at high speed, and the hysteresis becomes extremely small.
    • 提供了一种光电倍增管,其中入射光的透射率和光敏性高,滞后特性优异。 因此,在本发明中,将光电阴极16,倍增极数17a〜17c和负极18支撑在设置在玻璃泡11中的绝缘材料基板12a和12b之间。透明导电膜19形成在光的内壁面上 透明导电膜19与通过端子14引导到外部的焊盘20电接触。 与光电阴极12相同的电位通过焊盘20施加到透明导电膜19.入射光通过玻璃泡11和透明导电膜19在对应于光入射部分15的位置处直接照射在光电阴极16上 结果,入射光完全没有被干扰地到达光电阴极12,并且提高了入射光的透射率。 由于对透明导电膜19施加了规定的电位,所以高速地进行玻璃灯泡11的内壁面的电位变化,滞后变得非常小。
    • 6. 发明授权
    • Cathode for photoelectric emission, cathode for secondary electron
emission, electron multiplier tube, and photomultiplier tube
    • 用于光电发射的阴极,用于二次电子发射的阴极,电子倍增管和光电倍增管
    • US5463272A
    • 1995-10-31
    • US130897
    • 1993-10-04
    • Yasushi WataseMasao KinoshitaHiroyuki WatanabeTakeo HashimotoTakehiro IidaHiroaki Washiyama
    • Yasushi WataseMasao KinoshitaHiroyuki WatanabeTakeo HashimotoTakehiro IidaHiroaki Washiyama
    • H01J1/34H01J1/35H01J40/06H01J1/32
    • H01J1/35
    • A cathode for photoelectric emission or a cathode for secondary electron emission comprises a thin film made of a material which emits photoelectrons by an incident light or emits secondary electrons by an electron input on a base substrate. The average particle size of the particles forming the thin film is 200 nm to 2000 nm. It is preferred that the average particle size is nearly equal to an average diffusion length of the particle of an excited electron. Further, the average particle size is preferably larger than the mean value of penetration lengths of inputted electrons or incident lights in the particles. Moreover, preferably convexities and/or concavities formed of particles each having the average particle size are formed over the surface of a plane for the incident light or electron input. Further, it is preferred that the thin film is activated by an alkali metal and is made of compounds of at least one kind of alkali metal and an antimony metal. Moreover, a layer having high reflectance against light is preferably inserted between the base substrate and the thin film. Thus, according to the cathode for photoelectric emission or the cathode for secondary electron emission, photoelectrons or secondary electrons are generated effectively and emitted from the cathode for photoelectric emission or the cathode for secondary electron emission.
    • 用于光电发射的阴极或用于二次电子发射的阴极包括由通过入射光发射光电子的材料制成的薄膜或通过基底衬底上的电子输入发射二次电子。 形成薄膜的粒子的平均粒径为200nm〜2000nm。 优选平均粒径几乎等于被激发电子的粒子的平均扩散长度。 此外,平均粒径优选大于颗粒中输入的电子或入射光的穿透长度的平均值。 此外,优选在平均粒径的颗粒形成的凸起和/或凹部在用于入射光或电子输入的平面的表面上形成。 此外,优选薄膜由碱金属活化,并且由至少一种碱金属和锑金属的化合物制成。 此外,优选地,在基底基板和薄膜之间插入具有高光反射率的层。 因此,根据用于光电发射的阴极或用于二次电子发射的阴极,有效地产生光电子或二次电子并从用于光电发射的阴极或用于二次电子发射的阴极发射。