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    • 7. 发明授权
    • Angular velocity detecting device
    • 角速度检测装置
    • US08327706B2
    • 2012-12-11
    • US12832965
    • 2010-07-08
    • Heewon JeongYasushi Goto
    • Heewon JeongYasushi Goto
    • G01P15/08
    • G01P3/22G01C19/5747G01C19/5762
    • A high-performance angular rate detecting device is provided. A driving part including a drive frame and a Coriolis frame is levitated by at least two fixing beams which share a fixed end and are extending in a direction orthogonal to a driving direction, thereby vibrating the driving part. Even when a substrate is deformed by mounting or heat fluctuation, internal stress generated to the fixed beam and a supporting beam is small, thereby maintaining a vibrating state such as resonance frequency and vibration amplitude constant. Therefore, a high-performance angular rate detecting device which is robust to changes in mounting environment can be obtained.
    • 提供了一种高性能角速率检测装置。 包括驱动框架和科里奥利框架的驱动部分通过共享固定端并且沿与驱动方向正交的方向延伸的至少两个固定梁悬浮,从而使驱动部分振动。 即使当通过安装或热波动使基板变形时,产生到固定梁和支撑梁的内应力也小,从而保持振动状态,例如共振频率和振动幅度恒定。 因此,可以获得对安装环境变化坚固的高性能角速度检测装置。
    • 10. 发明授权
    • Manufacturing method of semiconductor device
    • 半导体器件的制造方法
    • US07199022B2
    • 2007-04-03
    • US10814627
    • 2004-04-01
    • Kan YasuiToshiyuki MineYasushi GotoNatsuki Yokoyama
    • Kan YasuiToshiyuki MineYasushi GotoNatsuki Yokoyama
    • H01L21/76
    • H01L21/76224Y10S438/907
    • In order to achieve an isolation trench formation process according to the present invention in which the structure of a silicon nitride film liner can be easily controlled and to allow both of reduction of the device feature length and reduction in stress occurring in an isolation trench, the silicon nitride film liner is first deposited on the inner wall of the trench formed on a silicon substrate. The upper surface of a first embedded insulator film for filling the inside of the trench is recessed downward so as to expose an upper end portion of the silicon nitride film liner. Next, the exposed portion of the silicon nitride film liner is converted into non-silicon-nitride type insulator film, such as a silicon oxide film. A second embedded insulator film is then deposited on the upper portion of the first embedded insulator film, and the deposited surface is then planarized.
    • 为了实现根据本发明的隔离沟槽形成方法,其中可以容易地控制氮化硅膜衬垫的结构并且允许器件特征长度的减小和在隔离沟槽中发生的应力的减小, 氮化硅膜衬垫首先沉积在形成在硅衬底上的沟槽的内壁上。 用于填充沟槽内部的第一嵌入式绝缘体膜的上表面向下凹入以暴露氮化硅膜衬垫的上端部分。 接下来,将氮化硅膜衬垫的露出部分转换成诸如氧化硅膜的非氮化硅型绝缘膜。 然后将第二嵌入式绝缘膜沉积在第一嵌入式绝缘膜的上部上,然后将沉积的表面平坦化。