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1. 发明授权

US5919310A Continuously film-forming apparatus provided with improved gas gate means 失效
标题翻译：连续成膜装置具有改进的气门装置
公开(公告)号：US5919310A
公开(公告)日：1999-07-06
申请号：US610076
申请日：1996-02-29
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
IPC分类号： C23C16/54 , C23C16/00
CPC分类号： C23C16/545
摘要： A continuous film-forming apparatus includes a plurality of reaction chambers each capable of forming a semiconductor film with a different chemical composition. The reaction chambers are arranged such that a substrate web on which a film is to be formed can be hermetically moved through each of the reaction chambers under a vacuum condition. A gas gate is disposed at a central position between each pair of adjacent reaction chambers, with each gas gate provided with a slit for communication between the adjacent reaction chambers. The slit is provided with a clearance which allows the substrate web to move therethrough, is structured such that gate gas can be introduced therein from above and beneath the substrate which is moved through the clearance, and is dimensioned such that opposite sides proximate to the position where the gate gas is introduced have different heights in accordance with the inner pressure upon film formation of each of the adjacent reaction chambers in communication with each other by the slit.
摘要翻译：连续成膜装置包括能够形成化学成分不同的半导体膜的多个反应室。反应室被布置成使得在其上形成膜的基材网可以在真空条件下气密地移动通过每个反应室。气门设置在每对相邻反应室之间的中心位置处，每个气门设置有用于在相邻反应室之间连通的狭缝。狭缝设置有允许衬底腹板通过其移动的间隙，其结构使得可以从移动通过间隙的衬底的上方和下方将栅极气体引入其中，并且其尺寸使得接近位置的相对侧其中引入的栅极气体根据通过狭缝彼此连通的每个相邻反应室的成膜时的内部压力具有不同的高度。

2. 发明授权

US5946587A Continuous forming method for functional deposited films 失效
标题翻译：功能沉积膜的连续成型方法
公开(公告)号：US5946587A
公开(公告)日：1999-08-31
申请号：US741352
申请日：1996-10-29
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
IPC分类号： C23C14/56 , C23C16/54 , H01L31/20 , C23C16/00
CPC分类号： H01L31/206 , C23C14/562 , C23C14/568 , C23C16/545 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein each of semiconductor layers of desired conduction type is deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is being moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via a gas gate having the structure of introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off the center of the separation chamber of the gas gate.
摘要翻译：本发明的目的在于提供一种具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间的气体之间的任何相互混合，其中期望的导电类型的每个半导体层沉积在带状通过等离子体CVD在多个成膜室内的基板，同时带状基板沿着其长度方向连续移动通过多个成膜室，该多个成膜室通过具有引入清除气体的结构的气门连接到狭缝状分离通道，其特征在于，连接形成半导体结的i型层成膜室和n型或p型层成膜室中的至少一个具有比i型层成膜室具有设置在n型或p型层上的清除气体导入位置成膜室一侧离开气门分离室的中心。

3. 发明授权

US5968274A Continuous forming method for functional deposited films and deposition apparatus 失效
标题翻译：功能沉积膜和沉积设备的连续成型方法
公开(公告)号：US5968274A
公开(公告)日：1999-10-19
申请号：US754066
申请日：1996-11-20
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
IPC分类号： C23C14/56 , C23C16/54 , H01L31/20
CPC分类号： H01L31/206 , C23C14/562 , C23C14/568 , C23C16/545 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein semiconductor layers of desired conductivity type are deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via gas gates having means for introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off from the center of the separation chamber of the gas gate.
摘要翻译：本发明的目的在于提供具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间任何相互混合的气体，其中期望的导电类型的半导体层沉积在带状衬底上多个成膜室，通过等离子体CVD，同时带状基板沿其长度方向连续移动通过多个通过气门连接的成膜室，其具有用于将清除气体引入狭缝状分离通道其特征在于，连接形成半导体结的i型层成膜室和i型层成膜室的n型或p型层成膜室中的至少一个气门具有比i型层成膜室高的压力所述清除气体导入位置设置在形成有n型或p型层的膜上 r侧从气门的分离室的中心离开。

4. 发明授权

US5720826A Photovoltaic element and fabrication process thereof 失效
标题翻译：光伏元件及其制造工艺
公开(公告)号：US5720826A
公开(公告)日：1998-02-24
申请号：US657066
申请日：1996-05-29
申请人： Ryo Hayashi , Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Jinsho Matsuyama , Akira Sakai , Yuzo Koda , Tadashi Hori , Takahiro Yajima
发明人： Ryo Hayashi , Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Jinsho Matsuyama , Akira Sakai , Yuzo Koda , Tadashi Hori , Takahiro Yajima
IPC分类号： H01L31/04 , H01L31/0392 , H01L31/075 , H01L31/20
CPC分类号： H01L31/076 , H01L31/03921 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： Provided are a photovoltaic element suitable for practical use, low in cost, high in reliability, and high in photoelectric conversion efficiency, and a fabrication process thereof. In the photovoltaic element having stacked layers of non-single-crystal semiconductors, at least an i-type semiconductor layer and a second conductivity type semiconductor layer are stacked on a first conductivity type semiconductor layer, and the second conduction type semiconductor layer has a layer A formed by exposing the surface of the i-type semiconductor layer to a plasma containing a valence electron controlling agent and a layer B deposited on the layer A by a CVD process using at least the valence electron controlling agent and the main constituent elements of the i-type semiconductor layer.
摘要翻译：提供适用于实际使用，成本低，可靠性高，光电转换效率高的光电元件及其制造方法。在具有非单晶半导体层叠的光电元件中，在第一导电型半导体层上层叠至少i型半导体层和第二导电型半导体层，第二导电型半导体层具有层 A通过使用至少化合价电子控制剂和主要构成元素的CVD工艺将i型半导体层的表面暴露于含有价电子控制剂和沉积在层A上的层B的等离子体 i型半导体层。

5. 发明授权

US5589007A Photovoltaic elements and process and apparatus for their formation 失效
标题翻译：光伏元件及其形成的工艺和设备
公开(公告)号：US5589007A
公开(公告)日：1996-12-31
申请号：US523169
申请日：1995-09-05
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Hideo Tamura , Atsushi Yasuno , Akira Sakai , Tadashi Hori
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Hideo Tamura , Atsushi Yasuno , Akira Sakai , Tadashi Hori
IPC分类号： H01L21/205 , H01L31/075 , H01L31/20
CPC分类号： H01L31/076 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/0262 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic element comprises a first non-monocrystalline silicon-containing semiconductor layer of a first-conductivity type, a first i-type non-monocrystalline silicon-containing semiconductor layer formed by microwave plasma CVD, a second i-type non-monocrystalline silicon-containing semiconductor layer formed by high-frequency plasma CVD, and a second non-monocrystalline silicon-containing semiconductor layer of a conductivity type opposite to the first-conductivity type, wherein the second semiconductor layer is formed by plasma doping.
摘要翻译：光电元件包括第一导电类型的第一非单晶硅含硅半导体层，通过微波等离子体CVD形成的第一i型非单晶含硅半导体层，第二i型非单晶硅含硅半导体层，通过高频等离子体CVD形成的含硅半导体层和与第一导电型相反的导电类型的第二非单晶硅含量半导体层，其中通过等离子体掺杂形成第二半导体层。

6. 发明授权

US06162988A Photovoltaic element 失效
标题翻译：光伏元件
公开(公告)号：US06162988A
公开(公告)日：2000-12-19
申请号：US923259
申请日：1997-09-04
申请人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
发明人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
IPC分类号： G03G5/08 , C23C16/50 , C23C16/511 , H01L21/205 , H01L31/04 , H01L31/075 , H01L31/076 , H01L31/20 , H01L31/00
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.
摘要翻译：本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法以及用于连续批量生产该装置的装置。

7. 发明授权

US5769963A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5769963A
公开(公告)日：1998-06-23
申请号：US697783
申请日：1996-08-30
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Koda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Koda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： H01L31/0368 , H01L31/075 , H01L31/20 , H01L31/0352
CPC分类号： H01L31/076 , H01L31/03682 , H01L31/075 , H01L31/206 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device comprises a semiconductor region having at least one set of semiconductor layers comprised of a first semiconductor layer having a first conductivity type, an intrinsic or substantially intrinsic second semiconductor layer, and a third semiconductor layer having a conductivity type opposite to that of the first conductivity type, the layers being formed in this order, and first and second electrodes provided such that the electrodes interpose the semiconductor region; wherein the density of a dopant impurity determining the conductivity type of the first semiconductor layer in a set of semiconductor layers which is in contact with the first electrode is varied so as to be lower on the side of the first electrode, or the grain size of crystals in the first semiconductor layer is varied so as to be smaller on the side of the first electrode. This provides a photovoltaic device that does not exhibit great lowering of characteristics even when short circuits locally occur in the semiconductor layers during long-term service.
摘要翻译：一种光电器件包括具有至少一组半导体层的半导体区域，该组半导体层由具有第一导电类型的第一半导体层，本征的或基本上本征的第二半导体层组成，以及具有与第第一导电类型，这些层依次形成，第一和第二电极设置成使得电极插入半导体区域; 其中确定与第一电极接触的一组半导体层中的第一半导体层的导电类型的掺杂剂杂质的密度在第一电极的侧面变化，或者在第一电极的一侧的晶粒尺寸第一半导体层中的晶体在第一电极侧变化较小。这提供了即使在长期服务期间在半导体层中局部出现短路的情况下也不会出现特性的降低的光电器件。

8. 发明申请

US20050161077A1 Apparatus for manufacturing photovoltaic elements 审中-公开
标题翻译：光电元件制造装置
公开(公告)号：US20050161077A1
公开(公告)日：2005-07-28
申请号：US10625041
申请日：2003-07-23
申请人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
发明人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
IPC分类号： G03G5/08 , C23C16/50 , C23C16/511 , H01L21/205 , H01L31/04 , H01L31/075 , H01L31/076 , H01L31/20 , H01L31/00
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： An apparatus for efficiently and continuously mass-producing a photovoltaic element by a plasma CVD method having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. The apparatus has a first chamber where raw material gas flows from top to bottom. A second chamber is connected to the first chamber by a separating path and causes the raw material gas to flow from bottom to top along the movement direction of the long substrate.
摘要翻译：一种用于通过等离子体CVD法有效且连续地大量生产光电元件的装置，其具有优异的电流 - 电压特性和优异的光电转换效率。该装置具有第一室，其中原料气体从上到下流动。第二室通过分离路径连接到第一室，并且使原料气体沿着长基板的移动方向从底部向上流动。

9. 发明授权

US06368944B1 Method of manufacturing photovoltaic element and apparatus therefor 有权
标题翻译：制造光伏元件的方法及其设备
公开(公告)号：US06368944B1
公开(公告)日：2002-04-09
申请号：US09664219
申请日：2000-09-18
申请人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
发明人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
IPC分类号： H01L2120
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.
摘要翻译：本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法以及用于连续批量生产该装置的装置。

10. 发明授权

US6159763A Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element 失效
标题翻译：用于形成半导体薄膜的方法和装置，以及用于形成光伏元件的方法和装置
公开(公告)号：US6159763A
公开(公告)日：2000-12-12
申请号：US927413
申请日：1997-09-10
申请人： Akira Sakai , Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
发明人： Akira Sakai , Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
IPC分类号： C23C16/509 , H01L21/205 , H01L31/075 , H01L31/20 , H01L31/18
CPC分类号： H01L31/076 , C23C16/5096 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： There is provided a method of forming a photovoltaic element, in which a p-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure, in which in a plasma discharge space, the surface area of a cathod electrode in a plasma discharge space is larger than the sum of surface areas of a belt-like member and an anode electrode, a potential of said cathod electrode at the time of excitation of glow discharge is positive relative to the belt-like member and the anode electrode, and a separator electrode partially constituting the cathod electrode is configured to have a form of a fin or a block, and an n-type semiconductor layer is formed in a device for forming a semiconductor thin film having a cathod electrode structure of a capacitive-coupling, parallel-plate type. Thereby, a photovoltaic element having a high quality and superior uniformity over a large area, less defects, superior photo deterioration property and improved series resistance can be manufactured providing a high throughput in large quantities with good reproducibility.
摘要翻译：提供一种形成光电元件的方法，其中在用于形成具有阴极电极结构的半导体薄膜的器件中形成p型半导体层，其中在等离子体放电空间中，阴极的表面积等离子体放电空间中的电极大于带状部件和阳极电极的表面积的总和，所述阴极电极在辉光放电的激发时的电位相对于带状部件是正的，阳极电极和部分地构成阴极电极的隔离电极构成为具有翅片或块的形式，并且在用于形成具有阴极电极结构的半导体薄膜的器件中形成n型半导体层电容耦合，平行板型。由此，可以制造出具有高质量且均匀性大的光电元件，较少的缺陷，优异的光劣化性能和改善的串联电阻，从而提供大量的高生产率和良好的再现性。

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