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    • 6. 发明授权
    • Semiconductor drive device
    • 半导体驱动装置
    • US08487668B2
    • 2013-07-16
    • US13148431
    • 2010-07-28
    • Yasushi Abe
    • Yasushi Abe
    • H03B1/00H03K3/00
    • H03K17/0828H03K17/08128H03K2017/0806
    • When there is a short circuit failure between the gate and emitter of a main switching element such as an IGBT, the temperature of a turn-on gate resistor or turn-off gate resistor is detected by a thermistor, and a drive circuit is protected by turning off a turn-on gate drive switching element or a turn-off gate drive switching element. Furthermore, instead of detecting the temperature of the turn-on gate resistor or turn-off gate resistor, a thermistor is connected in series with the turn-on gate drive switching element or turn-off gate drive switching element, the resistance change corresponding to a change in temperature of the thermistor is detected, and the drive circuit is protected by turning off the turn-on gate drive switching element or turn-off gate drive switching element.
    • 当主开关元件(例如IGBT)的栅极和发射极之间发生短路故障时,通过热敏电阻检测导通栅极电阻或关断栅极电阻的温度,驱动电路由 关闭导通栅极驱动开关元件或关断栅极驱动开关元件。 此外,代替检测导通栅极电阻器或关断栅极电阻器的温度,热敏电阻与导通栅极驱动开关元件或截止栅极驱动开关元件串联连接,电阻变化对应于 检测出热敏电阻的温度变化,并且通过关闭导通栅极驱动开关元件或关断栅极驱动开关元件来保护驱动电路。