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1. 发明申请

US20050048336A1 Fuel cell system, and operation and program for same 审中-公开
标题翻译：燃料电池系统，操作和程序相同
公开(公告)号：US20050048336A1
公开(公告)日：2005-03-03
申请号：US10897431
申请日：2004-07-23
申请人： Yasuo Takebe , Masatoshi Teranishi , Takashi Nakagawa , Makoto Uchida , Terutsugu Segawa
发明人： Yasuo Takebe , Masatoshi Teranishi , Takashi Nakagawa , Makoto Uchida , Terutsugu Segawa
IPC分类号： G01R31/36 , H01M8/00 , H01M8/04
CPC分类号： H01M8/04305 , G01R31/367 , G01R31/389 , H01M8/04223 , H01M8/04225 , H01M8/04231 , H01M8/04298
摘要： An electrolyte fuel system, its operation and program and a recording medium associated with the program is disclosed. Embodiments include a fuel cell system having a load electric current changing means for changing an amount of load electric current that runs in one ore more fuel cells which are operated to generate electricity, a measurement means for measuring voltage responses to the change in said load electric current, a calculating means for calculating impedance of said one or more fuel cells based on said voltage responses measured, and a fuel cell control means for controlling condition for operation of said one or more fuel cells by utilizing calculation results retrieved by said calculating means.
摘要翻译：公开了一种电解质燃料系统，其操作和程序以及与程序相关联的记录介质。实施例包括具有负载电流改变装置的燃料电池系统，该负载电流改变装置用于改变运行在一个以上的用于发电的燃料电池中的负载电流量;测量装置，用于测量对所述负载电力变化的电压响应电流，用于基于测量的所述电压响应来计算所述一个或多个燃料电池的阻抗的计算装置;以及燃料电池控制装置，用于通过利用由所述计算装置检索的计算结果来控制所述一个或多个燃料电池的操作条件。

2. 发明申请

US20110031238A1 MICROWAVE HEATING METHOD AND MICROWAVE HEATING APPARATUS 失效
标题翻译：微波加热方法和微波加热装置
公开(公告)号：US20110031238A1
公开(公告)日：2011-02-10
申请号：US12936787
申请日：2010-02-04
申请人： Terutsugu Segawa , Seiji Hamano , Fumio Sugata
发明人： Terutsugu Segawa , Seiji Hamano , Fumio Sugata
IPC分类号： H05B6/68 , H05B6/64
CPC分类号： H05B6/80 , C04B35/64 , C04B2235/667 , F27B5/14 , F27B5/18 , F27D99/0006 , F27D2099/0028 , H05B2206/046
摘要： A microwave heating apparatus (101) includes a burning chamber (103) in which an object (102) to be burned is placed, a magnetron (116) for applying microwaves into the heating apparatus, a cooling gas introducing mechanism (112b) for introducing a cooling gas from outside the heating apparatus into the heating apparatus, a cooling gas channel (113b) through which the cooling gas flows to the burning chamber (103), heat-generating members (114a to 114e) for self-heating with microwaves applied thereto to heat the cooling gas flowing through the cooling gas channel (113b) and a control section (117) for, when the burning chamber (103) having the object (102) to be burned placed therein is cooled, causing the cooling gas introducing mechanism (112b) to introduce the cooling gas into the heating apparatus, and causing the magnetron (116) to intermittently apply microwaves into the heating apparatus.
摘要翻译：微波加热装置（101）包括：燃烧室（103），其中放置有待燃烧的物体（102）;磁控管（116），用于向加热装置施加微波;冷却气体引入机构（112b），用于引入从加热装置外部到加热装置的冷却气体，冷却气体流向燃烧室（103）的冷却气体通路（113b），利用微波进行自加热的发热部件（114a〜114e）加热流过冷却气体通道（113b）的冷却气体和控制部（117），当将具有待燃烧物体（102）的燃烧室（103）冷却后，使冷却气体导入机构（112b）将冷却气体引入加热装置，并使磁控管（116）间歇地向加热装置施加微波。

3. 发明申请

US20090160472A1 WAFER-LEVEL BURN-IN METHOD AND WAFER-LEVEL BURN-IN APPARATUS 审中-公开
标题翻译：水平碾压方法和水平碾压装置
公开(公告)号：US20090160472A1
公开(公告)日：2009-06-25
申请号：US12064093
申请日：2006-06-26
申请人： Terutsugu Segawa , Minoru Sanada
发明人： Terutsugu Segawa , Minoru Sanada
IPC分类号： G01R31/02
CPC分类号： G01R31/2874 , H01L21/67248
摘要： Temperature control in wafer-level burn-in is performed such that a set temperature used for the temperature control is corrected using a correction value calculated from the generated heat density of a wafer (101). Thus it is possible to eliminate a difference between the temperature of the wafer heated when an electrical load is applied and a control temperature for applying a thermal load, not depending on the distribution of good devices formed on the wafer (101) and the power consumption of the devices. As a result, the wear and burn of a probe can be prevented and highly reliable screening can be achieved.
摘要翻译：进行晶片级老化期间的温度控制，使得使用由晶片（101）的产生的热密度计算的校正值校正用于温度控制的设定温度。因此，可以消除在施加电负载时加热的晶片的温度与施加热负荷的控制温度之间的差异，而不依赖于形成在晶片（101）上的良好器件的分布和功率消耗的设备。结果，可以防止探针的磨损和烧伤，并且可以实现高度可靠的筛选。

4. 发明授权

US07940064B2 Method and apparatus for wafer level burn-in 有权
标题翻译：晶圆级老化的方法和装置
公开(公告)号：US07940064B2
公开(公告)日：2011-05-10
申请号：US12063276
申请日：2006-05-29
申请人： Terutsugu Segawa , Minoru Sanada
发明人： Terutsugu Segawa , Minoru Sanada
IPC分类号： G01R31/00
CPC分类号： H01L21/67248 , G01R31/2874 , H01L21/67103 , H01L21/67242 , H01L21/67288
摘要： A temperature regulation plate 106 is divided into at least two areas, a heater 408 for applying a temperature load in correspondence with such areas and its control system are divided and controlled independently to set temperatures, and a cooling source is controlled by comparing the measurements from temperature sensors 409 arranged in respective areas for controlling the heater 408 and switching the measurement for calculating the control output sequentially thus reducing variation in in-plane temperature of a wafer due to heating when an electric load is applied. Since consumption and burning of a probe are prevented, highly reliable wafer level burn-in method and apparatus can be provided.
摘要翻译：温度调节板106被分成至少两个区域，加热器408用于对应于这些区域施加温度负荷，并且其控制系统被独立地分开和控制以设定温度，并且通过将来自温度传感器409布置在用于控制加热器408的各个区域中，并且顺序地切换用于计算控制输出的测量值，从而当施加电负载时，由于加热而减小晶片的面内温度的变化。由于防止了探测器的消耗和燃烧，因此可以提供高度可靠的晶片级老化方法和装置。

5. 发明申请

US20090102499A1 METHOD AND APPARATUS FOR WAFER LEVEL BURN-IN 有权
标题翻译：用于水平燃烧的方法和装置
公开(公告)号：US20090102499A1
公开(公告)日：2009-04-23
申请号：US12063276
申请日：2006-05-29
申请人： Terutsugu Segawa , Minoru Sanada
发明人： Terutsugu Segawa , Minoru Sanada
IPC分类号： G01R31/26
CPC分类号： H01L21/67248 , G01R31/2874 , H01L21/67103 , H01L21/67242 , H01L21/67288
摘要： A temperature regulation plate 106 is divided into at least two areas, a heater 408 for applying a temperature load in correspondence with such areas and its control system are divided and controlled independently to set temperatures, and a cooling source is controlled by comparing the measurements from temperature sensors 409 arranged in respective areas for controlling the heater 408 and switching the measurement for calculating the control output sequentially thus reducing variation in in-plane temperature of a wafer due to heating when an electric load is applied. Since consumption and burning of a probe are prevented, highly reliable wafer level burn-in method and apparatus can be provided.
摘要翻译：温度调节板106被分成至少两个区域，加热器408用于对应于这些区域施加温度负荷，并且其控制系统被独立地分开和控制以设定温度，并且通过将来自温度传感器409布置在用于控制加热器408的各个区域中，并且顺序地切换用于计算控制输出的测量值，从而当施加电负载时，由于加热而减小晶片的面内温度的变化。由于防止了探测器的消耗和燃烧，因此可以提供高度可靠的晶片级老化方法和装置。

6. 发明授权

US08779339B2 Microwave heating method and microwave heating apparatus 失效
标题翻译：微波加热方式和微波加热装置
公开(公告)号：US08779339B2
公开(公告)日：2014-07-15
申请号：US12936787
申请日：2010-02-04
申请人： Terutsugu Segawa , Seiji Hamano , Fumio Sugata
发明人： Terutsugu Segawa , Seiji Hamano , Fumio Sugata
IPC分类号： H05B6/64
CPC分类号： H05B6/80 , C04B35/64 , C04B2235/667 , F27B5/14 , F27B5/18 , F27D99/0006 , F27D2099/0028 , H05B2206/046
摘要： A microwave heating apparatus (101) includes a burning chamber (103) in which an object (102) to be burned is placed, a magnetron (116) for applying microwaves into the heating apparatus, a cooling gas introducing mechanism (112b) for introducing a cooling gas from outside the heating apparatus into the heating apparatus, a cooling gas channel (113b) through which the cooling gas flows to the burning chamber (103), heat-generating members (114a to 114e) for self-heating with microwaves applied thereto to heat the cooling gas flowing through the cooling gas channel (113b) and a control section (117) for, when the burning chamber (103) having the object (102) to be burned placed therein is cooled, causing the cooling gas introducing mechanism (112b) to introduce the cooling gas into the heating apparatus, and causing the magnetron (116) to intermittently apply microwaves into the heating apparatus.
摘要翻译：微波加热装置（101）包括：燃烧室（103），其中放置有待燃烧的物体（102）;磁控管（116），用于向加热装置施加微波;冷却气体引入机构（112b），用于引入从加热装置外部到加热装置的冷却气体，冷却气体流向燃烧室（103）的冷却气体通道（113b），利用微波进行自加热的发热部件（114a〜114e）加热流过冷却气体通道（113b）的冷却气体和控制部（117），当将具有待燃烧物体（102）的燃烧室（103）冷却后，使冷却气体导入机构（112b）将冷却气体引入加热装置，并使磁控管（116）间歇地向加热装置施加微波。

7. 发明申请

US20110065066A1 GRINDING APPARATUS AND GRINDING METHOD 审中-公开
标题翻译：研磨设备和研磨方法
公开(公告)号：US20110065066A1
公开(公告)日：2011-03-17
申请号：US12993413
申请日：2009-04-06
申请人： Terutsugu Segawa , Seiji Hamano , Fumio Sugata
发明人： Terutsugu Segawa , Seiji Hamano , Fumio Sugata
IPC分类号： A61C8/00 , B24B7/10
CPC分类号： B24B55/02 , A61C13/0006 , A61C13/12 , B23Q11/1007 , B24B1/04 , B24B19/22
摘要： A grinding apparatus (100) includes: a rotating grinding tool (102) for grinding a workpiece (101) immersed in a cooling liquid (106); vibration generating mechanisms (107a) to (107f) for applying vibrations to the cooling liquid (106) and generating cavitation; and a controller (108) for causing the vibration generating mechanisms (107a) to (107f) to generate the cavitation when the rotating grinding tool (102) is operated. The controller (108) turns on/off the vibration generating mechanisms (107a) to (107f) and adjusts amplitudes of the vibrations of the cooling liquid (106) generated by the vibration generating mechanisms (107a) to (107f) depending on a region in the workpiece (101) to be machined and one out of a plurality of machining steps to be performed.
摘要翻译：研磨装置（100）包括：用于研磨浸入冷却液体（106）中的工件（101）的旋转研磨工具（102）; 振动产生机构（107a）至（107f），用于向冷却液体（106）施加振动并产生空化; 以及用于当所述旋转的研磨工具（102）被操作时使所述振动产生机构（107a）至（107f）产生气蚀的控制器（108）。控制器（108）打开/关闭振动产生机构（107a）至（107f），并且根据区域调节振动产生机构（107a）至（107f）产生的冷却液（106）振动的振幅在待加工的工件（101）中，并且要执行多个加工步骤中的一个。

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