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    • 10. 发明授权
    • Substrate processing method, photomask manufacturing method, photomask, and device manufacturing method
    • 基板加工方法,光掩模制造方法,光掩模和器件制造方法
    • US07713889B2
    • 2010-05-11
    • US11600151
    • 2006-11-16
    • Shigeru Hirukawa
    • Shigeru Hirukawa
    • H01L21/00
    • G03F7/705G03F1/36G03F7/70108
    • A device linewidth characteristic is predicted based on a sharp-edged feature of a projected image of a predetermined pattern (steps 104 to 110), and an exposure condition of the pattern is adjusted based on the device linewidth characteristic that has been predicted (step 112). Then, exposure is performed under the adjusted exposure condition. That is, patterning of a resist on a substrate is performed with the projected image of the pattern (step 114). And, by developing the substrate after patterning, a resist pattern that satisfies a desired device linewidth characteristic is formed on the substrate. Accordingly, by performing etching of the substrate with the resist pattern serving as a mask, a pattern after etching can be formed with a desired linewidth.
    • 基于预定图案的投影图像的尖锐特征预测装置线宽特性(步骤104至110),并且基于已经预测的装置线宽特性来调整图案的曝光条件(步骤112 )。 然后,在调整后的曝光条件下进行曝光。 也就是说,利用图案的投影图像来执行基板上的抗蚀剂的图案化(步骤114)。 并且,通过在图案化之后显影衬底,在衬底上形成满足所需器件线宽特性的抗蚀剂图案。 因此,通过用抗蚀剂图案作为掩模进行基板的蚀刻,可以以期望的线宽形成蚀刻后的图案。