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1. 发明申请

US20090166608A1 Light emitting semiconductor device and fabrication method for the light emitting semiconductor device 有权
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US20090166608A1
公开(公告)日：2009-07-02
申请号：US12318118
申请日：2008-12-22
申请人： Yasuo Nakanishi , Masayuki Sonobe , Kazuaki Tsutsumi
发明人： Yasuo Nakanishi , Masayuki Sonobe , Kazuaki Tsutsumi
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/22 , H01L33/32
摘要： A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity.
摘要翻译：提供一种半导体发光器件及其外部发光效率提高的半导体发光器件的制造方法，并且半导体发光器件包括衬底; 保护膜放置在基板上; n型半导体层，其被放置在由保护膜夹持的基板上并在保护膜上，并掺杂有n型杂质; 放置在n型半导体层上的有源层以及置于有源层上并掺杂有p型杂质的p型半导体层。

2. 发明授权

US08415682B2 Light emitting semiconductor device having an improved outward luminosity efficiency and fabrication method for the light emitting semiconductor device 有权
标题翻译：具有改善的向外发光效率的发光半导体器件和用于发光半导体器件的制造方法
公开(公告)号：US08415682B2
公开(公告)日：2013-04-09
申请号：US12318118
申请日：2008-12-22
申请人： Yasuo Nakanishi , Masayuki Sonobe , Kazuaki Tsutsumi
发明人： Yasuo Nakanishi , Masayuki Sonobe , Kazuaki Tsutsumi
IPC分类号： H01L27/00
CPC分类号： H01L33/12 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647 , H01L33/22 , H01L33/32
摘要： A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity.
摘要翻译：提供一种半导体发光器件及其外部发光效率提高的半导体发光器件的制造方法，并且半导体发光器件包括衬底; 保护膜放置在基板上; n型半导体层，其被放置在由保护膜夹持的基板上并在保护膜上，并掺杂有n型杂质; 放置在n型半导体层上的有源层以及置于有源层上并掺杂有p型杂质的p型半导体层。

3. 发明申请

US20090206357A1 Semiconductor Light Emitting Device 审中-公开
标题翻译：半导体发光装置
公开(公告)号：US20090206357A1
公开(公告)日：2009-08-20
申请号：US11884456
申请日：2006-02-15
申请人： Norikazu Ito , Kazuaki Tsutsumi , Toshio Nishida , Masayuki Sonobe , Mitsuhiko Sakai , Atsushi Yamaguchi
发明人： Norikazu Ito , Kazuaki Tsutsumi , Toshio Nishida , Masayuki Sonobe , Mitsuhiko Sakai , Atsushi Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate (1), a semiconductor lamination portion (6) made of nitride semiconductor, including a first conductivity type layer (p-type layer (5)) and a second conductivity type layer (n-type layer (3)), is formed, a p-side electrode (8) is provided through a light transmitting conductive layer (7) thereon electrically connected to the p-type layer (5), and an n-side electrode (9) is provided electrically connected to the n-type layer (3) of the lower layer side of the semiconductor lamination portion(6). A mesa-like semiconductor lamination portion (6a) is formed by removing a part of the semiconductor lamination portion (6) around a chip by etching, and the mesa-like semiconductor lamination portion (6a) is formed such that a corner part having an angle of 90 degrees or less is rounded and has a curved line in a plan shape, thereby not to have an angle of 90 degrees or less on corner parts.
摘要翻译：提供了一种氮化物半导体发光器件，其中即使当施加反向电压或者甚至长时间操作时，半导体层也不容易损坏，并且通过在制造器件时防止半导体层劣化，可以获得优异的可靠性。在基板（1）的表面上，由氮化物半导体构成的包括第一导电型层（p型层（5））和第二导电型层（n型层（3））的半导体层叠部（6））），通过其上与p型层（5）电连接的透光导电层（7）设置p侧电极（8），并且n侧电极（9）电气地连接到半导体层叠部分（6）的下层侧的n型层（3）。通过蚀刻去除芯片周围的半导体层叠部分（6）的一部分形成台面状半导体层叠部（6a），并且形成台面状半导体层叠部（6a），使得具有 90度以下的角度是圆形的，并且具有平面形状的曲线，从而在角部不具有90度或更小的角度。

4. 发明申请

US20070278474A1 Semiconductor light emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：US20070278474A1
公开(公告)日：2007-12-06
申请号：US11789035
申请日：2007-04-23
申请人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Hiroaki Ohta
发明人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Hiroaki Ohta
IPC分类号： H01L31/0312
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06
摘要： A semiconductor light emitting element includes an active layer of a quantum well structure, and an n-type semiconductor layer and a p-type semiconductor layer, formed to hold the active layer therebetween. The active layer includes at least a well layer containing InGaN, and at least two barrier layers formed to hold the well layer therebetween, and containing one of InGaN and GaN. The well layer is entirely doped with one of a group IV element and a group VI element. The respective barrier layer includes a first portion closer to the p-type semiconductor layer and a second portion closer to the n-type semiconductor layer. The first portion is doped with one of the group IV element and the group VI element. The second portion is undoped.
摘要翻译：半导体发光元件包括量子阱结构的有源层，以及形成为将活性层保持在其间的n型半导体层和p型半导体层。有源层至少包括含有InGaN的阱层，以及形成为将阱层保持在其间并且包含InGaN和GaN中的一个的至少两个势垒层。阱层完全掺杂有IV族元素和VI族元素之一。各个阻挡层包括靠近p型半导体层的第一部分和靠近n型半导体层的第二部分。第一部分掺杂有IV族元素和VI族元素之一。第二部分是未掺杂的。

5. 发明授权

US08222655B2 Semiconductor light-emitting device and process for producing the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US08222655B2
公开(公告)日：2012-07-17
申请号：US12223739
申请日：2007-02-08
申请人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
发明人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).
摘要翻译：本发明的半导体发光器件包括：衬底（1），由衬底（1）支撑的n-GaN层（2），位于离衬底（1）更远的p-GaN层（7）在n-GaN层（2）中，形成在n-GaN层（2）和p-GaN层（7）之间并含有InGaN的有源层（4），形成在该GaN衬底之间的升华防止层（5）有源层（4）和p-GaN层（7）并且包含InGaN，以及夹在升华防止层（5）和p-GaN层（7）之间的In组成梯度层（6），并且具有这样的In组成 In组成比在厚度方向朝向p-GaN层（7）减小的比率梯度。

6. 发明申请

US20090014839A1 Nitride-Based Semiconductor Device 审中-公开
标题翻译：基于氮化物的半导体器件
公开(公告)号：US20090014839A1
公开(公告)日：2009-01-15
申请号：US12223785
申请日：2007-02-08
申请人： Masayuki Sonobe , Norikazu Ito , Kazuaki Tsutsumi , Tetsuya Fujiwara
发明人： Masayuki Sonobe , Norikazu Ito , Kazuaki Tsutsumi , Tetsuya Fujiwara
IPC分类号： H01L29/20
CPC分类号： H01L33/305 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/025 , H01S5/3063 , H01S5/32341
摘要： A nitride-based semiconductor device includes: an n-GaN layer 103; an active layer 104 formed on the n-GaN layer 103; a first AlGaN layer 105 formed on the active layer 104 at a growth temperature ranging from 900 to 1200° C. and by doping of Mg at a doping concentration ranging from 5×1019 to 2×1020/cm3; a second AlGaN layer 106 formed on the first AlGaN layer 105 at a growth temperature ranging from 900 to 1200° C.; and a p-GaN layer 107 formed on the second AlGaN layer 106.
摘要翻译：氮化物类半导体器件包括：n-GaN层103; 形成在n-GaN层103上的有源层104; 在900〜1200℃的生长温度下在有源层104上形成的第一AlGaN层105，并以5×10 19〜2×10 20 / cm 3的掺杂浓度掺杂Mg; 在900〜1200℃的生长温度下形成在第一AlGaN层105上的第二AlGaN层106。以及形成在第二AlGaN层106上的p-GaN层107。

7. 发明申请

US20100035410A1 Method for Manufacturing InGaN 审中-公开
标题翻译：制造InGaN的方法
公开(公告)号：US20100035410A1
公开(公告)日：2010-02-11
申请号：US12086418
申请日：2006-12-07
申请人： Masayuki Sonobe , Norikazu Ito , Kazuaki Tsutsumi , Tetsuya Fujiwara , Shinichi Tamai
发明人： Masayuki Sonobe , Norikazu Ito , Kazuaki Tsutsumi , Tetsuya Fujiwara , Shinichi Tamai
IPC分类号： H01L21/20
CPC分类号： C23C16/303 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： To provide a method for manufacturing InGaN which causes less segregation of In and achieves high crystallinity of an InGaN layer with the proportion of In increased.The method for manufacturing an InGaN layer including growing an InGaN layer under conditions of a growth temperature of 700 to 790° C., a growth rate of 30 to 93 Å/min, and a flow rate of trimethylindium of 0.882×10−5 to 3.53×10−5 mol/min.
摘要翻译：提供一种制造InGaN的方法，其使In的偏析较少，并且In增加的InGaN层的结晶度达到高结晶度。 InGaN层的制造方法，包括在生长温度为700〜790℃，生长速度为30〜93 /分钟，三甲基铟的流量为0.882×10 -5〜3.53的条件下生长InGaN层 x 10 -5 mol / min。

8. 发明申请

US20090272992A1 Semiconductor Light-Emitting Device and Process for Producing the Same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090272992A1
公开(公告)日：2009-11-05
申请号：US12223739
申请日：2007-02-08
申请人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
发明人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).
摘要翻译：本发明的半导体发光器件包括：衬底（1），由衬底（1）支撑的n-GaN层（2），位于离衬底（1）更远的p-GaN层（7）在n-GaN层（2）中，形成在n-GaN层（2）和p-GaN层（7）之间并含有InGaN的有源层（4），形成在该GaN衬底之间的升华防止层（5）有源层（4）和p-GaN层（7）并且包含InGaN，以及夹在升华防止层（5）和p-GaN层（7）之间的In组成梯度层（6），并且具有这样的In组成 In组成比在厚度方向朝向p-GaN层（7）减小的比率梯度。

9. 发明申请

US20100133506A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR 审中-公开
标题翻译：氮化物半导体发光元件和制造氮化物半导体的方法
公开(公告)号：US20100133506A1
公开(公告)日：2010-06-03
申请号：US12452060
申请日：2008-06-13
申请人： Yasuo Nakanishi , Shunji Nakata , Tetsuya Fujiwara , Kazuhiko Senda , Masayuki Sonobe
发明人： Yasuo Nakanishi , Shunji Nakata , Tetsuya Fujiwara , Kazuhiko Senda , Masayuki Sonobe
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/325
摘要： Provided are a nitride semiconductor light emitting element having a nitride semiconductor layered on an AlN buffer layer with improved qualities such as crystal quality and with improved light emission output, and a method of manufacturing a nitride semiconductor. An AlN buffer layer (2) is formed on a sapphire substrate (1), and nitride semiconductors of an n-type AlGaN layer (3), an InGaN/GaN active layer (4) and a p-type GaN layer (5) are layered in sequence on the buffer layer (2). An n-electrode (7) is formed on a surface of the n-type AlGaN layer (3), and a p-electrode (6) is formed on the p-type GaN layer (5). The n-type AlGaN layer (3) serves as a cladding layer for confining light and carriers. The AlN buffer layer (2) is manufactured by alternately supplying an Al material and an N material at a growing temperature of 900° C. or higher.
摘要翻译：提供一种氮化物半导体发光元件，其具有层叠在AlN缓冲层上的氮化物半导体，其具有改善的质量，例如晶体质量和改善的发光输出，以及制造氮化物半导体的方法。在蓝宝石衬底（1）上形成AlN缓冲层（2），并且n型AlGaN层（3），InGaN / GaN有源层（4）和p型GaN层（5）的氮化物半导体在缓冲层（2）上依次分层。在n型AlGaN层（3）的表面上形成n电极（7），在p型GaN层（5）上形成p电极（6）。 n型AlGaN层（3）用作限制光和载流子的包覆层。 AlN缓冲层（2）通过在900℃以上的生长温度下交替地供给Al材料和N材料来制造。

10. 发明申请

US20090278144A1 Nitride Semiconductor Light Emitting Device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20090278144A1
公开(公告)日：2009-11-12
申请号：US12085564
申请日：2006-11-28
申请人： Masayuki Sonobe , Norikazu Ito , Mitsuhiko Sakai
发明人： Masayuki Sonobe , Norikazu Ito , Mitsuhiko Sakai
IPC分类号： H01L33/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01L33/105 , H01L33/32 , H01S5/34333
摘要： There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion (3) provided on a first light reflection layer (2) provided on a substrate (1). The first light reflection layer (2) is formed with laminating a low refractivity layer (21) and a high refractivity layer (22) which have a different refractivity from each other, and the low refractivity layer (21) of the first light reflection layer is formed with a single layer structure of an AlxGa1-xN layer (0≦x≦1), and the high refractivity layer (22) of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1-yN layer (0≦y≦0.5 and y
摘要翻译：提供一种氮化物半导体发光器件，其具有能够防止由于有源层的质量劣化而引起的反射率降低和降低亮度的光反射层。氮化物半导体激光器至少包括设置在设置在基板（1）上的第一光反射层（2）上的发光层形成部（3）。第一光反射层（2）形成为具有彼此不同的折射率的低折射率层（21）和高折射率层（22），并且第一光反射层的低折射率层（21）形成有Al x Ga 1-x N层（0 <= x <= 1）的单层结构，并且第一光反射层的高折射率层（22）形成有多层结构，其通过交替层叠AlyGa1 -yN层（0 <= y <= 0.5和y

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