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1. 发明申请

US20100035410A1 Method for Manufacturing InGaN 审中-公开
标题翻译：制造InGaN的方法
公开(公告)号：US20100035410A1
公开(公告)日：2010-02-11
申请号：US12086418
申请日：2006-12-07
申请人： Masayuki Sonobe , Norikazu Ito , Kazuaki Tsutsumi , Tetsuya Fujiwara , Shinichi Tamai
发明人： Masayuki Sonobe , Norikazu Ito , Kazuaki Tsutsumi , Tetsuya Fujiwara , Shinichi Tamai
IPC分类号： H01L21/20
CPC分类号： C23C16/303 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： To provide a method for manufacturing InGaN which causes less segregation of In and achieves high crystallinity of an InGaN layer with the proportion of In increased.The method for manufacturing an InGaN layer including growing an InGaN layer under conditions of a growth temperature of 700 to 790° C., a growth rate of 30 to 93 Å/min, and a flow rate of trimethylindium of 0.882×10−5 to 3.53×10−5 mol/min.
摘要翻译：提供一种制造InGaN的方法，其使In的偏析较少，并且In增加的InGaN层的结晶度达到高结晶度。 InGaN层的制造方法，包括在生长温度为700〜790℃，生长速度为30〜93 /分钟，三甲基铟的流量为0.882×10 -5〜3.53的条件下生长InGaN层 x 10 -5 mol / min。

2. 发明授权

US08222655B2 Semiconductor light-emitting device and process for producing the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US08222655B2
公开(公告)日：2012-07-17
申请号：US12223739
申请日：2007-02-08
申请人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
发明人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).
摘要翻译：本发明的半导体发光器件包括：衬底（1），由衬底（1）支撑的n-GaN层（2），位于离衬底（1）更远的p-GaN层（7）在n-GaN层（2）中，形成在n-GaN层（2）和p-GaN层（7）之间并含有InGaN的有源层（4），形成在该GaN衬底之间的升华防止层（5）有源层（4）和p-GaN层（7）并且包含InGaN，以及夹在升华防止层（5）和p-GaN层（7）之间的In组成梯度层（6），并且具有这样的In组成 In组成比在厚度方向朝向p-GaN层（7）减小的比率梯度。

3. 发明申请

US20090272992A1 Semiconductor Light-Emitting Device and Process for Producing the Same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090272992A1
公开(公告)日：2009-11-05
申请号：US12223739
申请日：2007-02-08
申请人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
发明人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).
摘要翻译：本发明的半导体发光器件包括：衬底（1），由衬底（1）支撑的n-GaN层（2），位于离衬底（1）更远的p-GaN层（7）在n-GaN层（2）中，形成在n-GaN层（2）和p-GaN层（7）之间并含有InGaN的有源层（4），形成在该GaN衬底之间的升华防止层（5）有源层（4）和p-GaN层（7）并且包含InGaN，以及夹在升华防止层（5）和p-GaN层（7）之间的In组成梯度层（6），并且具有这样的In组成 In组成比在厚度方向朝向p-GaN层（7）减小的比率梯度。

4. 发明申请

US20090127570A1 Double Wavelength Semiconductor Light Emitting Device and Method of Manufacturing the Same 失效
标题翻译：双波长半导体发光器件及其制造方法
公开(公告)号：US20090127570A1
公开(公告)日：2009-05-21
申请号：US12224287
申请日：2007-02-23
申请人： Shinichi Tamai , Ken Nakahara , Atsushi Yamaguchi
发明人： Shinichi Tamai , Ken Nakahara , Atsushi Yamaguchi
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/0425 , H01S5/20 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S5/4087 , H01S2304/04
摘要： Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same.Semiconductor lasers D1 and D2 as two light emitting elements having different wavelengths are integrally formed on a common substrate 1. A semiconductor laminate A is deposited on an n-type contact layer 21 in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode 12 formed between the semiconductor lasers D1 and D2 is shared by the semiconductor lasers D1 and D2, and serves as a common electrode on an n side. Additionally, the semiconductor laminate having a shorter wavelength is crystal-grown firstly.
摘要翻译：提供了一种双波长半导体发光器件，其具有设置在同一表面侧的n电极和p电极，其中芯片的面积减小以增加从单个晶片获取的芯片的数量，其中光聚焦性能双波长光束的改善，其中可以防止在制造过程中具有较长波长的发光元件的有源层劣化; 及其制造方法。作为具有不同波长的两个发光元件的半导体激光器D1和D2一体地形成在公共基板1上。半导体层叠体A沉积在半导体激光器D1中的n型接触层21上，并且半导体层叠体B沉积在半导体激光器D2。半导体层叠体A和半导体层叠体B具有不同的层结构。形成在半导体激光器D1和D2之间的n电极12由半导体激光器D1和D2共享，并且用作n侧的公共电极。此外，首先将具有较短波长的半导体层叠体晶体生长。

5. 发明授权

US07745839B2 Double wavelength semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：双波长半导体发光器件及其制造方法
公开(公告)号：US07745839B2
公开(公告)日：2010-06-29
申请号：US12224287
申请日：2007-02-23
申请人： Shinichi Tamai , Ken Nakahara , Atsushi Yamaguchi
发明人： Shinichi Tamai , Ken Nakahara , Atsushi Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/0425 , H01S5/20 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S5/4087 , H01S2304/04
摘要： Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same.Semiconductor lasers D1 and D2 as two light emitting elements having different wavelengths are integrally formed on a common substrate 1. A semiconductor laminate A is deposited on an n-type contact layer 21 in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode 12 formed between the semiconductor lasers D1 and D2 is shared by the semiconductor lasers D1 and D2, and serves as a common electrode on an n side. Additionally, the semiconductor laminate having a shorter wavelength is crystal-grown firstly.
摘要翻译：提供了一种双波长半导体发光器件，其具有设置在同一表面侧的n电极和p电极，其中芯片的面积减小以增加从单个晶片获取的芯片的数量，其中光聚焦性能双波长光束的改善，其中可以防止在制造过程中具有较长波长的发光元件的有源层劣化; 及其制造方法。作为具有不同波长的两个发光元件的半导体激光器D1和D2一体地形成在公共基板1上。半导体层叠体A沉积在半导体激光器D1中的n型接触层21上，并且半导体层叠体B沉积在半导体激光器D2。半导体层叠体A和半导体层叠体B具有不同的层结构。形成在半导体激光器D1和D2之间的n电极12由半导体激光器D1和D2共享，并且用作n侧的公共电极。此外，首先将具有较短波长的半导体层叠体晶体生长。

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