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1. 发明授权

US5337326A Semiconductor laser device with compressively stressed barrier layer 失效
标题翻译：具有压应力阻挡层的半导体激光器件
公开(公告)号：US5337326A
公开(公告)日：1994-08-09
申请号：US953458
申请日：1992-09-29
申请人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani , Masanori Watanabe
发明人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani , Masanori Watanabe
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/32 , H01S5/3201 , H01S5/3211 , H01S5/32325
摘要： A semiconductor laser device includes a substrate; a double hetero structure having an n-type cladding layer, an active layer, and a p-type cladding layer, which is formed on an upper face of the substrate; and electrodes formed on a lower face of the substrate and on an upper face of the double hetero structure, wherein the double hetero structure further includes a p-type hetero-barrier layer formed between the p-type cladding layer and the active layer, which is strained by compression due to a lattice mismatch.
摘要翻译：半导体激光装置包括：基板; 形成在基板的上表面上的具有n型包覆层，有源层和p型覆层的双异质结构; 以及形成在所述基板的下表面上和所述双异质结构的上表面上的电极，其中所述双异质结构还包括形成在所述p型覆层和所述有源层之间的p型异质势垒层，由于晶格失配而被压缩而变形。

2. 发明授权

US5310697A Method for fabricating an AlGaInP semiconductor light emitting device including the step of removing an oxide film by irradiation with plasma beams and an As or P molecular beam 失效
标题翻译：一种制造AlGaInP半导体发光器件的方法，包括通过等离子体束的照射和As或P分子束的去除氧化膜的步骤
公开(公告)号：US5310697A
公开(公告)日：1994-05-10
申请号：US993058
申请日：1992-12-18
申请人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani
发明人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani
IPC分类号： H01L21/302 , H01L21/3065 , H01S5/00 , H01S5/042 , H01S5/223 , H01S5/323 , H01L21/20
CPC分类号： H01S5/32325 , H01L33/0062 , H01S5/2231 , Y10S148/017 , Y10S438/974
摘要： A method for fabricating an AlGaInP semiconductor light emitting device having a substrate and a multilayer structure including an AlGaInP first semiconductor layer formed on the substrate. The method comprises the steps of removing part of the multilayer structure so that the first semiconductor layer is exposed, irradiating with plasma beams an oxide film formed on the exposed first semiconductor layer with the substrate temperature being kept at 500.degree. C. or less, so as to remove the oxide film from the first semiconductor layer and growing a second semiconductor layer on the first semiconductor layer.
摘要翻译：一种制造具有衬底的AlGaInP半导体发光器件的方法和包括在衬底上形成的AlGaInP第一半导体层的多层结构。该方法包括以下步骤：去除部分多层结构，使得第一半导体层被暴露，用等离子体束照射形成在暴露的第一半导体层上的氧化膜，衬底温度保持在500℃或更低，因此从第一半导体层去除氧化膜并在第一半导体层上生长第二半导体层。

3. 发明授权

US6002701A Self-pulsation type semiconductor laser device 失效
标题翻译：自脉冲型半导体激光器件
公开(公告)号：US6002701A
公开(公告)日：1999-12-14
申请号：US771150
申请日：1996-12-20
申请人： Yasuo Kan , Kentaro Tani , Tadashi Takeoka , Akiyoshi Sugahara
发明人： Yasuo Kan , Kentaro Tani , Tadashi Takeoka , Akiyoshi Sugahara
IPC分类号： H01S5/00 , H01S5/065 , H01S5/22 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2231 , H01S5/0658 , H01S5/2219
摘要： A self-pulsation type semiconductor laser device includes a semiconductor substrate of a first conductive type and a multilayered structure including at least an active layer provided on the semi conductor substrate. The multilayered structure includes a first cladding layer of the first conductive type provided below the active layer, a second cladding layer of a second conductive type having a striped ridge portion provided above the active layer and a saturable absorbing film provided over the second cladding layer. The saturable absorbing film includes an accumulation region for accumulating photoexcited carriers. The accumulating region is provided apart from a surface of the second cladding layer.
摘要翻译：自脉动型半导体激光器件包括第一导电类型的半导体衬底和至少包括设置在半导体衬底上的有源层的多层结构。多层结构包括设置在有源层下方的第一导电类型的第一包层，具有设置在有源层上方的条纹脊部的第二导电类型的第二包层和设置在第二包层上的可饱和吸收膜。可饱和吸收膜包括用于积聚光激发载流子的积聚区域。蓄积区域与第二包覆层的表面分开设置。

4. 发明授权

US4845535A Light emitting semiconductor device 失效
标题翻译：发光半导体器件
公开(公告)号：US4845535A
公开(公告)日：1989-07-04
申请号：US147553
申请日：1988-01-19
申请人： Masamichi Yamanishi , Ikuo Suemune , Yasuo Kan
发明人： Masamichi Yamanishi , Ikuo Suemune , Yasuo Kan
IPC分类号： H01L27/15 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/062 , H01S5/223 , H01S5/32 , H01S5/34
CPC分类号： H01L33/0041 , H01L33/0025 , H01S5/06203 , H01S5/06216 , H01S5/223 , H01S5/3222 , H01S5/3428
摘要： The disclosed light emitting semiconductor device has an n-type (or p-type) base region sandwiched by a p-type (or n-type) emitter region and a p-type (or n-type) collector region. An injecting voltage source is connected across the emittter region and base region so as to apply a constant voltage therebetween, while a control voltage source is connected across the emitter region and the collector region so as to selectively apply a reverse bias to a base-collector junction for controlling recombination of carriers injected to the base region. The control voltage source produces such non-emitting period voltage and emitting period voltage that carriers injected during the non-emitting period voltage are captured in the base region while the carriers thus captured are allowed to recombine during the emitting period voltage.

5. 发明授权

US06707834B2 Semiconductor laser device and process for producing the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06707834B2
公开(公告)日：2004-03-16
申请号：US10179012
申请日：2002-06-26
申请人： Hiroyuki Hosoba , Yasuo Kan
发明人： Hiroyuki Hosoba , Yasuo Kan
IPC分类号： H01S500
CPC分类号： H01S5/0421 , H01S5/2231 , H01S5/2275 , H01S5/321 , H01S5/32391
摘要： In a semiconductor laser element, an active layer is sandwiched between first-conductivity type and second-conductivity type cladding layers, and a second-conductivity type contact layer is disposed above the second cladding layer with an intermediate bandgap layer interposed between the second cladding layer and the contact layer, the second-conductivity type contact layer having a bandgap different from a bandgap of the second-conductivity type cladding layer, the intermediate bandgap layer having an intermediate bandgap between the bandgaps of the second-conductivity type cladding layer and the second-conductivity type contact layer. The second-conductivity type contact layer has at least a first contact layer, an intermediate second contact layer and a third contact layer stacked in this order and the second contact layer has an impurity density lower than impurity densities of the first and third contact layers.
摘要翻译：在半导体激光元件中，有源层夹在第一导电型和第二导电型包覆层之间，第二导电型接触层设置在第二覆层的上方，中间带隙层介于第二覆层所述接触层，所述第二导电型接触层具有与所述第二导电型包覆层的带隙不同的带隙，所述中间带隙层在所述第二导电型包覆层的带隙与所述第二导电型包覆层的带隙之间具有中间带隙导电型接触层。第二导电型接触层具有至少第一接触层，中间第二接触层和第三接触层，并且第二接触层的杂质密度低于第一和第三接触层的杂质浓度。

6. 发明授权

US07092422B2 Self-pulsation type semiconductor laser 失效
标题翻译：自脉冲型半导体激光器
公开(公告)号：US07092422B2
公开(公告)日：2006-08-15
申请号：US10713657
申请日：2003-11-14
申请人： Yasuo Kan
发明人： Yasuo Kan
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , H01S5/0658 , H01S5/2209 , H01S5/2218 , H01S5/4031 , H01S5/4087
摘要： In a self-pulsation type semiconductor laser, a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type having a striped ridge portion are successively stacked on a semiconductor substrate of the first conductivity type. In an embedding layer formed on either side surface of the ridge portion and on either flat portion other than the ridge portion of the second clad layer, a saturable absorption layer is provided on a material layer having a refractive index equal to or greater than that of the second clad layer and not absorbing laser light.
摘要翻译：在自脉冲型半导体激光器中，第一导电类型的第一覆盖层，有源层和具有条纹脊部的第二导电类型的第二覆盖层依次堆叠在第一导电类型的半导体衬底上。在形成在脊部的任一侧表面上以及除了第二包覆层的脊部之外的任何一个平坦部分上的嵌入层中，在可折射率等于或大于第二覆层并且不吸收激光。

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