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1. 发明授权

US5310697A Method for fabricating an AlGaInP semiconductor light emitting device including the step of removing an oxide film by irradiation with plasma beams and an As or P molecular beam 失效
标题翻译：一种制造AlGaInP半导体发光器件的方法，包括通过等离子体束的照射和As或P分子束的去除氧化膜的步骤
公开(公告)号：US5310697A
公开(公告)日：1994-05-10
申请号：US993058
申请日：1992-12-18
申请人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani
发明人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani
IPC分类号： H01L21/302 , H01L21/3065 , H01S5/00 , H01S5/042 , H01S5/223 , H01S5/323 , H01L21/20
CPC分类号： H01S5/32325 , H01L33/0062 , H01S5/2231 , Y10S148/017 , Y10S438/974
摘要： A method for fabricating an AlGaInP semiconductor light emitting device having a substrate and a multilayer structure including an AlGaInP first semiconductor layer formed on the substrate. The method comprises the steps of removing part of the multilayer structure so that the first semiconductor layer is exposed, irradiating with plasma beams an oxide film formed on the exposed first semiconductor layer with the substrate temperature being kept at 500.degree. C. or less, so as to remove the oxide film from the first semiconductor layer and growing a second semiconductor layer on the first semiconductor layer.
摘要翻译：一种制造具有衬底的AlGaInP半导体发光器件的方法和包括在衬底上形成的AlGaInP第一半导体层的多层结构。该方法包括以下步骤：去除部分多层结构，使得第一半导体层被暴露，用等离子体束照射形成在暴露的第一半导体层上的氧化膜，衬底温度保持在500℃或更低，因此从第一半导体层去除氧化膜并在第一半导体层上生长第二半导体层。

2. 发明授权

US5337326A Semiconductor laser device with compressively stressed barrier layer 失效
标题翻译：具有压应力阻挡层的半导体激光器件
公开(公告)号：US5337326A
公开(公告)日：1994-08-09
申请号：US953458
申请日：1992-09-29
申请人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani , Masanori Watanabe
发明人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani , Masanori Watanabe
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/32 , H01S5/3201 , H01S5/3211 , H01S5/32325
摘要： A semiconductor laser device includes a substrate; a double hetero structure having an n-type cladding layer, an active layer, and a p-type cladding layer, which is formed on an upper face of the substrate; and electrodes formed on a lower face of the substrate and on an upper face of the double hetero structure, wherein the double hetero structure further includes a p-type hetero-barrier layer formed between the p-type cladding layer and the active layer, which is strained by compression due to a lattice mismatch.
摘要翻译：半导体激光装置包括：基板; 形成在基板的上表面上的具有n型包覆层，有源层和p型覆层的双异质结构; 以及形成在所述基板的下表面上和所述双异质结构的上表面上的电极，其中所述双异质结构还包括形成在所述p型覆层和所述有源层之间的p型异质势垒层，由于晶格失配而被压缩而变形。

3. 发明授权

US5360762A Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device 失效
标题翻译：半导体激光器件以及包括半导体激光器件的化合物半导体器件的制造方法
公开(公告)号：US5360762A
公开(公告)日：1994-11-01
申请号：US080004
申请日：1993-06-21
申请人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
发明人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01L21/20 , H01L21/205 , H01L31/105 , H01L31/18 , H01L33/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323
CPC分类号： H01S5/32325 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/02658 , H01L31/105 , H01L31/1844 , H01L33/0062 , H01S5/2231 , H01S2304/02 , H01S5/0421 , H01S5/209 , H01S5/3211 , Y02E10/544 , Y02P70/521 , Y10S148/095
摘要： On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purl fled, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.
摘要翻译：在GaAs衬底（AlYGa1-Y）上，形成与衬底晶格匹配的0.5In0.5P晶体层（0≤Y≤1）。通过在层叠基板的加热的同时将As分子束照射到晶体层中的In蒸发的温度，将结晶层的表面附近的部分变更为AlYGa1-YAs晶体层（0 < / = Y <1），其上形成有AlXGa1-XAs晶体层（0≤X≤1）的几个分子的厚度。由于AlYGa1-YAs晶体层的表面已经被剥离，所形成的AlXGa1-XAs晶体层具有高结晶度，从而能够以高效率制造发光二极管，半导体激光器件等。

4. 发明授权

US5027169A Semiconductor device with substrate misorientation 失效
标题翻译：具有衬底取向偏移的半导体器件
公开(公告)号：US5027169A
公开(公告)日：1991-06-25
申请号：US531386
申请日：1990-06-01
申请人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Masafumi Kondo , Takahiro Suyama
发明人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Masafumi Kondo , Takahiro Suyama
IPC分类号： H01L21/203 , B82Y10/00 , B82Y40/00 , H01L21/20 , H01L29/04
CPC分类号： H01L33/16 , B82Y20/00 , H01L21/02392 , H01L21/02395 , H01L21/02398 , H01L21/02433 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L29/045 , H01L33/0062 , H01L33/06
摘要： A semiconductor device comprising a (111)B single-crystalline semiconductor substrate which is misoriented toward (110), and epitaxial layers grown on the substrate by molecular beam epitaxy, whereby the crystallinity and luminescence efficiency of epitaxial layers are significantly improved.

5. 发明授权

US5255279A Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device 失效
标题翻译：半导体激光器件以及包括半导体激光器件的化合物半导体器件的制造方法
公开(公告)号：US5255279A
公开(公告)日：1993-10-19
申请号：US698001
申请日：1991-05-09
申请人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
发明人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01L21/20 , H01L21/205 , H01L31/105 , H01L31/18 , H01L33/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32325 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/02658 , H01L31/105 , H01L31/1844 , H01L33/0062 , H01S5/2231 , H01S2304/02 , H01S5/0421 , H01S5/209 , H01S5/3211 , Y02E10/544 , Y02P70/521 , Y10S148/095
摘要： On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purified, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.

6. 发明授权

US06738402B1 Semiconductor device with multiple laser resonators 失效
标题翻译：具有多个激光谐振器的半导体器件
公开(公告)号：US06738402B1
公开(公告)日：2004-05-18
申请号：US09499027
申请日：2000-02-07
申请人： Masahiro Hosoda , Tadashi Takeoka , Atsuo Tsunoda
发明人： Masahiro Hosoda , Tadashi Takeoka , Atsuo Tsunoda
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01L2224/48463 , H01S5/0224 , H01S5/02276 , H01S5/0421 , H01S5/0425 , H01S5/2231 , H01S5/227 , H01S5/3432 , H01S5/34326 , H01S5/4031 , H01S5/4087
摘要： By using a single semiconductor laser device, laser beams in infrared and red regions are generated at a distance between close light emitting spots. A semiconductor laser resonator having an oscillation wavelength in an infrared region and a semiconductor laser resonator having an oscillation wavelength in a red region are formed in parallel on the same semiconductor substrate.
摘要翻译：通过使用单个半导体激光器件，在近光发射点之间的距离处产生红外和红色区域中的激光束。在同一半导体衬底上平行地形成具有红外区域中的振荡波长的半导体激光谐振器和具有红色区域的振荡波长的半导体激光谐振器。

7. 发明授权

US5022036A Semiconductor laser device 失效
公开(公告)号：US5022036A
公开(公告)日：1991-06-04
申请号：US456673
申请日：1989-12-27
申请人： Takahiro Suyama , Masafumi Kondo , Kazuaki Sasaki , Masahiro Hosoda , Kosei Takahashi , Toshiro Hayakawa
发明人： Takahiro Suyama , Masafumi Kondo , Kazuaki Sasaki , Masahiro Hosoda , Kosei Takahashi , Toshiro Hayakawa
IPC分类号： H01S5/10 , H01S5/22 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/10 , H01S5/22 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate and a multi-layered crystal structure disposed on the substrate, the multi-layered crystal structure containing a first cladding layer, a quantum-well active layer for laser oscillation, and a second cladding layer with a striped ridge portion for current injection, wherein the difference in the effective refractive index between the region underneath the striped ridge portion and the adjacent regions thereto is greater in the vicinity of at least one of the facets than inside of the facets.

8. 发明授权

US07226693B2 Cadmium negative electrode for alkaline storage battery and method for producing the same 失效
标题翻译：碱性蓄电池用镉负极及其制造方法
公开(公告)号：US07226693B2
公开(公告)日：2007-06-05
申请号：US10022284
申请日：2001-12-20
申请人： Kei Tomihara , Masahiro Hosoda
发明人： Kei Tomihara , Masahiro Hosoda
IPC分类号： H01M2/16 , H01M6/04 , H01M4/02 , H01M4/60
CPC分类号： H01M4/667 , H01M4/0416 , H01M4/246 , H01M4/366 , H01M10/30 , Y02E60/124 , Y02P70/54 , Y10T29/49115
摘要： A method for producing a cadmium negative electrode for alkaline batteries according to the present invention comprises a step of obtaining a cadmium active-substance impregnated electrode plate by impregnating said electrode substrate with a cadmium active substance; and a step of adding polyethylene glycol for forming a polyethylene glycol coating on the surface of said cadmium negative electrode or on the surface of said active substance by coating or impregnating said active-substance impregnated electrode with polyethylene glycol.
摘要翻译：本发明的碱性电池用镉负极的制造方法包括通过用镉活性物质浸渍所述电极基板来获得镉活性物质浸渍电极板的工序; 以及通过用聚乙二醇涂布或浸渍所述活性物质浸渍电极，在所述镉负极的表面上或所述活性物质的表面上添加用于形成聚乙二醇涂层的聚乙二醇的步骤。

9. 发明授权

US06186667B1 Rolling bearing unit encoder 有权
标题翻译：滚动轴承单元编码器
公开(公告)号：US06186667B1
公开(公告)日：2001-02-13
申请号：US09225356
申请日：1999-01-05
申请人： Yuji Nakamura , Hiroya Miyazaki , Masahiro Hosoda , Hideo Ouchi
发明人： Yuji Nakamura , Hiroya Miyazaki , Masahiro Hosoda , Hideo Ouchi
IPC分类号： F16C1908
CPC分类号： G01P3/443 , F16C19/185 , F16C33/7853 , F16C33/7876 , F16C33/805 , F16C41/007 , F16C2326/02
摘要： A rolling bearing unit comprising a rotatable race having an inner peripheral surface formed with an outer ring raceway and an outer peripheral surface formed with a rotating flange, a stationary race having an outer peripheral surface formed with an inner ring raceway, a plurality of rolling members between the outer ring raceway and the inner ring raceway, an annular encoder of multi-pole magnet supported in a concentric relation with the rotatable race to have characteristics alternately changed with a uniform interval in the circumferential direction and having an outer diameter larger than the outer diameter of the rotatable race, and a metal ring for supporting the encoder onto the rotatable race and having a cylindrical portion provided to enclose the encoder.
摘要翻译：一种滚动轴承单元，包括具有形成有外圈滚道的内周面和形成有旋转凸缘的外周面的可旋转座圈，具有形成有内圈滚道的外周面的固定座圈，多个滚动构件在外圈滚道和内圈滚道之间，具有与可旋转座圈同心关系的多极磁体的环形编码器，其特征在周向上以均匀的间隔交替变化，并且外径大于外圈可旋转的座圈的直径，以及用于将编码器支撑在可旋转座圈上并具有设置成包围编码器的圆柱形部分的金属环。

10. 发明申请

US20100301902A1 DECODER CIRCUIT 有权
标题翻译：解码器电路
公开(公告)号：US20100301902A1
公开(公告)日：2010-12-02
申请号：US12845290
申请日：2010-07-28
申请人： Mitsuhiro TOMOEDA , Makoto Muneyasu , Masahiro Hosoda
发明人： Mitsuhiro TOMOEDA , Makoto Muneyasu , Masahiro Hosoda
IPC分类号： G11C8/00
CPC分类号： H03K19/20 , G11C8/08 , G11C8/10 , G11C16/08
摘要： A normally operable decoder circuit is obtained without entailing a delay in decoding operation, an increase in circuit area, and an increase in circuit design cost. An NMOS transistor in a high-voltage circuit portion is inserted between the output of a NAND gate and a node, and receives an input signal at the gate electrode thereof. A load current generating portion in the high-voltage circuit portion includes PMOS transistors coupled in series between a high power supply voltage and the node. One of the PMOS transistor receives a control signal at the gate electrode thereof. The other PMOS transistor receives a control signal at the gate electrode thereof. An inverter receives a signal obtained from the node as an input signal, and outputs the inverted signal thereof as an output signal.
摘要翻译：获得正常可操作的解码器电路，而不需要解码操作的延迟，电路面积的增加和电路设计成本的增加。高电压电路部分中的NMOS晶体管插在NAND门与节点的输出端之间，并在其栅电极处接收输入信号。高压电路部分中的负载电流产生部分包括串联耦合在高电源电压和节点之间的PMOS晶体管。一个PMOS晶体管在其栅电极处接收控制信号。另一个PMOS晶体管在其栅电极处接收控制信号。逆变器接收从节点获得的信号作为输入信号，并将其反相信号作为输出信号输出。

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