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1. 发明授权

US5266146A Microwave-powered plasma-generating apparatus and method 失效
标题翻译：微波功率等离子体发生装置及方法
公开(公告)号：US5266146A
公开(公告)日：1993-11-30
申请号：US763206
申请日：1991-09-20
申请人： Yasunori Ohno , Takashi Iga , Noriyuki Sakudo , Kenichi Natsui , Isao Hashimoto
发明人： Yasunori Ohno , Takashi Iga , Noriyuki Sakudo , Kenichi Natsui , Isao Hashimoto
IPC分类号： H01J27/18 , H01J37/08 , H01J37/32 , H01L21/00
CPC分类号： H01J37/32623 , H01J37/32357 , H01J37/3266
摘要： A plasma-generating apparatus has a plasma discharge chamber having a plasma-generation region. Microwave energy is applied, while introducing plasma-forming gas, and a magnetic field is applied to the plasma-generation region by an electromagnetic coil extending around the chamber. To enhance the field in the plasma-generation region while reducing it outside said region, and a permanent magnet arrangement is at least partly located radially within the coil so as to provide a unidirectional magnetic field which extends through the whole of the plasma-generation region as seen in radial cross-section and is oriented in the axial direction of the coil.

2. 发明授权

US5064520A Method and apparatus for forming a film 失效
标题翻译：用于形成膜的方法和装置
公开(公告)号：US5064520A
公开(公告)日：1991-11-12
申请号：US480131
申请日：1990-02-14
申请人： Kiyoshi Miyake , Yasunori Ohno , Masato Isogai , Yukio Nakagawa , Takayoshi Seki , Koukichi Ouhata , Kenichi Natsui , Terunori Warabisako , Keiji Arimatsu
发明人： Kiyoshi Miyake , Yasunori Ohno , Masato Isogai , Yukio Nakagawa , Takayoshi Seki , Koukichi Ouhata , Kenichi Natsui , Terunori Warabisako , Keiji Arimatsu
IPC分类号： C23C14/12 , C23C14/34
CPC分类号： C23C14/3414 , C23C14/12 , C23C14/3407
摘要： This invention relates to a method and an apparatus for forming a film, which are suitable for forming a film of a semiconductor, dielectric, metal, insulator, or organic substance. In order to form a film of high purity and quality at high speed, a particle beam such as an ion beam, an electron beam, or a plasma is applied to a sputtering target comprising a substance formed by bonding atoms or molecules with either van der Waals forces or hydrogen bonding forces, the particles are sputtered thereby from the target, fly in the space in the vacuum chamber, reach the substrate on which they are deposited to form a desired film. To form an organic film free of pinholes, impurities, or disorder in the molecular composition and arrangement in a large area at high speed, a particle beam of about 10 eV or less is applied to the target comprising an organic compound disposed in a vacuum, the particle beam having a level of energy as high as can break the molecular crystalline bonds and not high enough to break the nonmolecular crystalline bonds, out of the molecular crystalline bonds by van der Waals forces connecting the atoms constituting the organic compound and the nonmolecular crystalline bonds by covalent bonds, for example, other than van der Waals forces, and the sputtered particles from the target are deposited on the substrate facing the target to form a desired film of an organic compound.

3. 发明授权

US5620522A Microwave plasma generator 失效
标题翻译：微波等离子发生器
公开(公告)号：US5620522A
公开(公告)日：1997-04-15
申请号：US534063
申请日：1995-09-26
申请人： Satoshi Ichimura , Tadashi Sato , Takashi Iga , Kenichi Natsui
发明人： Satoshi Ichimura , Tadashi Sato , Takashi Iga , Kenichi Natsui
IPC分类号： H01J27/18 , H01J37/08 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32192 , H01J37/32633 , H01J37/32697
摘要： A microwave plasma generator, wherein permanent magnets 3 forms intense magnetic field exceeding an intensity of electron cyclotron resonance magnetic field at microwave exit 6a of a dielectric body in an electron heating space chamber, the intensity of the magnetic field formed by the permanent magnet decreases rapidly to the zero at a point 14 in the vicinity of the boundary of the electronic heating space camber 1 and a plasma generating space chamber 2, and accordingly, most of electrons can be absorbed into electrons to heat and form high energy electrons at a position 12a-12c in electron cyclotron resonance layer 12.
摘要翻译：一种微波等离子体发生器，其中，永久磁铁3在电子加热空间室内形成超过电介质体的微波出口6a处的电子回旋共振磁场强度的强磁场，由永磁体形成的磁场强度急剧下降到电子加热空间弧度1的边界附近的点14处的零点和等离子体产生空间室2，因此，大部分电子可以被吸收到电子中以在位置12a处加热并形成高能电子 -12c的电子回旋共振层12。

4. 发明授权

US6153846A Vacuum insulated switching apparatus 有权
标题翻译：真空绝缘开关装置
公开(公告)号：US6153846A
公开(公告)日：2000-11-28
申请号：US258311
申请日：1999-02-26
申请人： Ayumu Morita , Kenichi Natsui , Toru Tanimizu
发明人： Ayumu Morita , Kenichi Natsui , Toru Tanimizu
IPC分类号： G01L21/00 , H01H33/66 , H01H33/668 , G01L21/30 , G01R31/327
CPC分类号： H01H33/668
摘要： A vacuum switch 1 includes a grounded vacuum vessel 2. The reliability of monitoring and measuring the vacuum pressure is improved by providing a vacuum pressure measuring terminal 30 at a side plane of the vacuum vessel 2 such that a main circuit 13 and the measuring terminal 30 are electrically separated from each other.
摘要翻译：真空开关1包括接地的真空容器2.通过在真空容器2的侧面设置真空压力测量端子30，使得主电路13和测量端子30 彼此电分离。

5. 发明授权

US5610381A Compression gas puffer type circuit breaker 失效
标题翻译：压缩气体河豚式断路器
公开(公告)号：US5610381A
公开(公告)日：1997-03-11
申请号：US553754
申请日：1995-10-23
申请人： Eisaku Mizufune , Kenichi Natsui , Yukio Kurosawa , Goro Daimon , Yoshihito Asai , Katsuichi Kashimura , Osamu Koyanagi , Kogi Ishikawa
发明人： Eisaku Mizufune , Kenichi Natsui , Yukio Kurosawa , Goro Daimon , Yoshihito Asai , Katsuichi Kashimura , Osamu Koyanagi , Kogi Ishikawa
IPC分类号： H01H33/91 , H01H9/52 , H01H33/16 , H01H33/915 , H01H33/88
CPC分类号： H01H33/16 , H01H2009/526 , H01H9/52
摘要： A compression gas puffer type circuit breaker has a magnetic body surrounding a conductor between a stationary arc contact and a main bus conductor. The magnetic body is protected from being exposed to heated puffer gas generated when a movable arc contact is separated from the stationary arc contact by disposing an insulator partition plate supporting the conductor at the downstream end of a cylindrical contact base carrying a main stationary contact and upstream of the magnetic body. Conductors are disposed around the magnetic body so as to increase flux linkage with the magnetic body when an arcing current flows through the conductor during a circuit breaking operation.
摘要翻译：压缩气体吹气式断路器具有围绕固定电弧触点和主母线导体之间的导体的磁体。通过在承载主固定触点和上游的圆筒形接触基底的下游端设置支撑导体的绝缘体分隔板，可以防止磁体暴露于当可动电弧触点与固定电弧触点分离时产生的加热的河豚气体的磁体。导体在磁体周围设置，以便在断路操作期间当电弧流过导体时增加与磁体的磁通。

6. 发明授权

US5246741A Method for surface modification and apparatus therefor 失效
标题翻译：表面改性方法及其设备
公开(公告)号：US5246741A
公开(公告)日：1993-09-21
申请号：US630858
申请日：1990-12-20
申请人： Koukichi Ouhata , Kenichi Natsui
发明人： Koukichi Ouhata , Kenichi Natsui
IPC分类号： C01F7/02 , C04B35/10 , C04B41/00 , C04B41/80 , C23C14/22 , C23C14/48
CPC分类号： C04B41/009 , C04B41/0027 , C04B41/80 , C23C14/22 , C23C14/48
摘要： A substrate to be modified is placed in a vacuum vessel, a reducing atmosphere is provided over the substrate and simultaneously therewith the substrate is irradiated with accelerated ions, whereby oxygen which bonds to the substrate is freed from the substrate, the oxygen bonds to a material which forms the reducing atmosphere and the surface of the substrate is modified by the accelerated ion. The surface of the substrate can be thus efficiently modifed at relatively low temperatures. Furthermore, by evaporating carbon for an alumina substrate or alumina powder or providing hydrocarbon gas over the alumina substrate or alumina powder in a vacuum vessel, the alumina substrate or alumina powder is providing in the reducing atmosphere and the alumina substrate or alumina powder is irradiated with accelerated nitrogen ions from an ion source, whereby aluminum and oxygen which constitute the alumina substrate or alumina powder are cut off from each other by irradiation with the accelerated nitrogen ions. The oxygen reacts with carbon or hydrocarbon gas which forms the reducing atmosphere to form carbon monoxide or carbon dioxide, which is evacuated. On the other hand, the aluminum is modified to aluminum nitride by the accelerated nitrogen ions or nitrogen particles. That is, the surface of the alumina substrate or alumina powder can be efficiently modifed at relatively low temperatures.
摘要翻译：将待改性的基板放置在真空容器中，在基板上设置还原气氛，同时衬底被加速离子照射，由此与基板结合的氧离开基板，氧键连接到材料其形成还原气氛，并且基板的表面被加速离子改性。因此，可以在较低温度下有效地修改基板的表面。此外，通过蒸发氧化铝基体或氧化铝粉末的碳或在真空容器中的氧化铝基体或氧化铝粉末上提供烃气体，在还原气氛中提供氧化铝基体或氧化铝粉末，并且将氧化铝基体或氧化铝粉末照射从离子源加速氮离子，由此通过加速的氮离子的照射将构成氧化铝基体或氧化铝粉末的铝和氧彼此切断。氧气与形成还原气氛的碳或烃气体反应形成一氧化碳或二氧化碳，其被排空。另一方面，通过加速的氮离子或氮颗粒将铝改性成氮化铝。也就是说，氧化铝基底或氧化铝粉末的表面可以在相对低的温度下被有效地修饰。

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