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1. 发明申请

US20130175447A1 Scanning Electron Microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US20130175447A1
公开(公告)日：2013-07-11
申请号：US13812451
申请日：2011-08-26
申请人： Yasunari Sohda , Hiromasa Yamanashi , Muneyuki Fukuda , Takeyoshi Ohashi , Osamu Komuro
发明人： Yasunari Sohda , Hiromasa Yamanashi , Muneyuki Fukuda , Takeyoshi Ohashi , Osamu Komuro
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J37/153 , H01J2237/1506 , H01J2237/1532 , H01J2237/2826
摘要： Provided is a scanning electron microscope equipped with a high-speed and high-precision astigmatism measuring means to be used when both astigmatism generated by an electron-beam column and astigmatism generated from the surroundings of a measuring sample exist. This scanning electron microscope is characterized in controlling an astigmatism corrector (201) with high-speed and high-precision, to correct the astigmatism, by using both a method of obtaining the astigmatism from the qualities of two-dimensional images to be acquired upon changing the intensity of the astigmatism corrector (201), and a method of measuring the astigmatism from the change in the position displacement of an electron beam that occurs when the electron beam is tilted using a tilt deflector (202).
摘要翻译：本发明提供一种扫描电子显微镜，其配备有当由电子束柱产生的散光和从测量样品的周围产生的散光存在时使用的高速和高精度散光测量装置。该扫描电子显微镜的特征在于以高速和高精度控制像散校正器（201），以通过使用从改变后获得的二维图像的质量获得散光的方法来校正像散散光校正器（201）的强度，以及根据使用倾斜偏转器（202）使电子束倾斜时发生的电子束的位置偏移的变化来测量像散的方法。

2. 发明授权

US08704175B2 Scanning electron microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US08704175B2
公开(公告)日：2014-04-22
申请号：US13812451
申请日：2011-08-26
申请人： Yasunari Sohda , Muneyuki Fukuda , Takeyoshi Ohashi , Osamu Komuro , Toru Yamanashi
发明人： Yasunari Sohda , Hiromasa Yamanashi , Muneyuki Fukuda , Takeyoshi Ohashi , Osamu Komuro
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J37/153 , H01J2237/1506 , H01J2237/1532 , H01J2237/2826
摘要： Provided is a scanning electron microscope equipped with a high-speed and high-precision astigmatism measuring means to be used when both astigmatism generated by an electron-beam column and astigmatism generated from the surroundings of a measuring sample exist. This scanning electron microscope is characterized in controlling an astigmatism corrector (201) with high-speed and high-precision, to correct the astigmatism, by using both a method of obtaining the astigmatism from the qualities of two-dimensional images to be acquired upon changing the intensity of the astigmatism corrector (201), and a method of measuring the astigmatism from the change in the position displacement of an electron beam that occurs when the electron beam is tilted using a tilt deflector (202).
摘要翻译：本发明提供一种扫描电子显微镜，其配备有当由电子束柱产生的散光和从测量样品的周围产生的散光存在时使用的高速和高精度散光测量装置。该扫描电子显微镜的特征在于以高速和高精度控制像散校正器（201），以通过使用从改变后获得的二维图像的质量获得散光的方法来校正像散散光校正器（201）的强度，以及根据使用倾斜偏转器（202）使电子束倾斜时发生的电子束的位置偏移的变化来测量像散的方法。

3. 发明申请

US20120305764A1 METHOD OF DETERMINING THE CONCAVITY AND CONVEXITY ON SAMPLE SURFACE, AND CHARGED PARTICLE BEAM APPARATUS 审中-公开
标题翻译：确定样品表面的浓度和渗透率的方法和带电粒子束装置
公开(公告)号：US20120305764A1
公开(公告)日：2012-12-06
申请号：US13570931
申请日：2012-08-09
申请人： Yoshihiro Kimura , Osamu Komuro , Fumihiro Sasajima
发明人： Yoshihiro Kimura , Osamu Komuro , Fumihiro Sasajima
IPC分类号： G01N23/225
CPC分类号： G01B15/08 , H01J37/28 , H01J2237/2814 , H01J2237/2817
摘要： A method and apparatus suitable for determining the concavity and convexity of line and space patterns formed on a sample. A profile is formed based on a charged-particle beam scan, the profile having a peak. When one foot portion of the peak converges more gradually than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a convex portion. Alternatively, when one foot portion of the peak converges more steeply than the other foot portion, a portion of the sample corresponding to the one foot portion is determined to be a concave portion.
摘要翻译：适用于确定在样品上形成的线和空间图案的凹凸的方法和装置。基于带电粒子束扫描形成轮廓，轮廓具有峰值。当峰的一个脚部比另一个脚部更加逐渐收敛时，与一个脚部相对应的部分样本被确定为凸部。或者，当峰的一个脚部比另一个脚部收敛得更陡峭时，与一个脚部对应的样本的一部分被确定为凹部。

4. 发明授权

US07619751B2 High-accuracy pattern shape evaluating method and apparatus 有权
标题翻译：高精度图案形状评估方法及装置
公开(公告)号：US07619751B2
公开(公告)日：2009-11-17
申请号：US12125444
申请日：2008-05-22
申请人： Atsuko Yamaguchi , Hiroshi Fukuda , Osamu Komuro , Hiroki Kawada
发明人： Atsuko Yamaguchi , Hiroshi Fukuda , Osamu Komuro , Hiroki Kawada
IPC分类号： G01B11/24 , G01N23/00 , G06K9/46
CPC分类号： G01N23/2251
摘要： A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise.
摘要翻译：当N个边缘位置数据项被平均时，由于随机噪声导致的边缘位置分布的数量（或色散值）预期在统计上降低到1 / N。使用该属性，将单页图像在垂直方向上与参数S的各种值进行平均，然后计算边缘粗糙度指数。分析边缘粗糙度指数的S依赖性，并将与1 / S成正比的色散值的项确定为由噪声引起的。

5. 发明申请

US20090226096A1 EDGE DETECTION TECHNIQUE AND CHARGED PARTICLE RADIATION EQUIPMENT 有权
标题翻译：边缘检测技术和充电颗粒辐射设备
公开(公告)号：US20090226096A1
公开(公告)日：2009-09-10
申请号：US12393321
申请日：2009-02-26
申请人： Hitoshi NAMAI , Osamu Komuro , Satoru Yamaguchi , Fumihiro Sasajima
发明人： Hitoshi NAMAI , Osamu Komuro , Satoru Yamaguchi , Fumihiro Sasajima
IPC分类号： G06K9/48
CPC分类号： G06K9/4609 , G06T7/13
摘要： An object of the present invention is to provide an edge detection technique and equipment which are capable of stably detecting an edge by suppressing the influence of noise even in the case where the image is obtained by charged particle radiation equipment, such as a scanning electron microscope and has a low S/N ratio. More specifically, the present invention is to propose a technique and equipment which are configured to determine a peak position (edge) on the basis of the following two edge extraction techniques. That is, the present invention is to propose a technique and equipment wherein at least two peaks are formed by using, as edge detection techniques, for example, one peak detection technique having a relatively high sensitivity and the other peak detection technique which is relatively less susceptible to the influence of noise than the one peak detection technique, and wherein a position where the peaks coincide with each other is determined as a true peak position (edge position).
摘要翻译：本发明的目的是提供一种能够通过抑制噪声的影响来稳定地检测边缘的边缘检测技术和设备，即使在通过诸如扫描电子显微镜的带电粒子辐射设备获得图像的情况下并具有较低的S / N比。更具体地，本发明是提出一种被配置为基于以下两个边缘提取技术来确定峰值位置（边缘）的技术和设备。也就是说，本发明提出一种技术和设备，其中通过使用作为边缘检测技术的至少两个峰形成例如具有相对较高灵敏度的一个峰值检测技术和相对较少的另一个峰值检测技术容易受到噪声的影响而不是一个峰值检测技术，并且其中峰值彼此一致的位置被确定为真正的峰值位置（边缘位置）。

6. 发明申请

US20090020699A1 MICROSTRUCTURED PATTERN INSPECTION METHOD 有权
标题翻译：微结构图案检测方法
公开(公告)号：US20090020699A1
公开(公告)日：2009-01-22
申请号：US12208389
申请日：2008-09-11
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23/225
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要翻译：相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且分析相应的趋势。因此，检测到步进器或晶片异常。

7. 发明授权

US07435959B2 Microstructured pattern inspection method 有权
标题翻译：微结构图案检验方法
公开(公告)号：US07435959B2
公开(公告)日：2008-10-14
申请号：US11798395
申请日：2007-05-14
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23/225
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.
摘要翻译：相对于由步进器暴露的微结构化图案检测掩模版的边缘，并且检测光致抗蚀剂表面和底部处的微结构图案的形状。通过在屏幕上计算和显示代表光刻胶表面和底部上检测到的图案之间的位置关系的位错矢量来评估微结构化图案。此外，同样计算单芯片或单次照射区域或一个晶片上的多个位置处的微结构化图案之间的位错矢量，则将每个这样的位置处的位错矢量的尺寸和分布状态分类为特征量，并且分析相应的趋势。因此，检测到步进器或晶片异常。

8. 发明申请

US20070242885A1 High-accuracy pattern shape evaluating method and apparatus 有权
公开(公告)号：US20070242885A1
公开(公告)日：2007-10-18
申请号：US11808627
申请日：2007-06-12
申请人： Atsuko Yamaguchi , Hiroshi Fukuda , Osamu Komuro , Hiroki Kawada
发明人： Atsuko Yamaguchi , Hiroshi Fukuda , Osamu Komuro , Hiroki Kawada
IPC分类号： G06K9/48
CPC分类号： G01N23/2251
摘要： A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise.

9. 发明授权

US07230723B2 High-accuracy pattern shape evaluating method and apparatus 有权
标题翻译：高精度图案形状评估方法及装置
公开(公告)号：US07230723B2
公开(公告)日：2007-06-12
申请号：US11322559
申请日：2006-01-03
申请人： Atsuko Yamaguchi , Hiroshi Fukuda , Osamu Komuro , Hiroki Kawada
发明人： Atsuko Yamaguchi , Hiroshi Fukuda , Osamu Komuro , Hiroki Kawada
IPC分类号： G01B11/24 , G01N23/00
CPC分类号： G01N23/2251
摘要： A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise.
摘要翻译：当N个边缘位置数据项被平均时，由于随机噪声导致的边缘位置分布的数量（或色散值）预期在统计上降低到1 / N。使用该属性，将单页图像在垂直方向上与参数S的各种值进行平均，然后计算边缘粗糙度指数。分析边缘粗糙度指数的S依赖性，并将与1 / S成正比的色散值的项确定为由噪声引起的。

10. 发明授权

US07217923B2 Microstructured pattern inspection method 有权
公开(公告)号：US07217923B2
公开(公告)日：2007-05-15
申请号：US11197584
申请日：2005-08-05
申请人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
发明人： Fumihiro Sasajima , Osamu Komuro , Fumio Mizuno
IPC分类号： G01N23/225
CPC分类号： G03F7/70608 , G01N23/225 , G06T7/0004 , H01J37/265 , H01J37/28 , H01J2237/221 , H01J2237/24592 , H01J2237/2487
摘要： The edges of the reticle are detected with respect to the microstructured patterns exposed by the stepper, and the shapes of the microstructured patterns at the surface and at the bottom of the photoresist are detected. The microstructured patterns are evaluated by calculating, and displaying on the screen, the dislocation vector that represents the relationship in position between the detected patterns on the surface and at the bottom of the photoresist. Furthermore, dislocation vectors between the microstructured patterns at multiple positions in a single-chip or single-shot area or on one wafer are likewise calculated, then the sizes and distribution status of the dislocation vectors at each such position are categorized as characteristic quantities, and the corresponding tendencies are analyzed. Thus, stepper or wafer abnormality is detected.

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