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1. 发明授权

US06801827B2 Overlay inspection apparatus for semiconductor substrate and method thereof 失效
标题翻译：半导体衬底叠层检查装置及其方法
公开(公告)号：US06801827B2
公开(公告)日：2004-10-05
申请号：US10268716
申请日：2002-10-09
申请人： Yasuhiro Yoshitake , Shunichi Matsumoto , Toshiharu Miwa
发明人： Yasuhiro Yoshitake , Shunichi Matsumoto , Toshiharu Miwa
IPC分类号： G06F1900
CPC分类号： H01L21/67253 , G03F7/70125 , G03F7/705 , G03F7/70525 , G03F7/706 , G03F7/70633
摘要： A system for manufacturing a semiconductor device which predicts a difference in registration error between a circuit pattern and an overlay mark from a pattern dimension, illumination conditions and the wave aberration of an exposure lens, feeds a correction value based on the predicted difference back to an exposure device and modifies an overlay inspection data control limit.
摘要翻译：用于制造半导体器件的系统，其根据图案尺寸，照射条件和曝光透镜的波像差来预测电路图案和覆盖标记之间的配准误差的差异，将基于预测差异的校正值反馈给曝光装置和修改覆盖检查数据控制限制。

2. 发明授权

US06697698B2 Overlay inspection apparatus for semiconductor substrate and method thereof 失效
公开(公告)号：US06697698B2
公开(公告)日：2004-02-24
申请号：US10198394
申请日：2002-07-17
申请人： Yasuhiro Yoshitake , Shunichi Matsumoto , Toshiharu Miwa
发明人： Yasuhiro Yoshitake , Shunichi Matsumoto , Toshiharu Miwa
IPC分类号： G06F1900
CPC分类号： H01L21/67253 , G03F7/70125 , G03F7/705 , G03F7/70525 , G03F7/706 , G03F7/70633
摘要： A system for manufacturing a semiconductor device which predicts a difference in registration error between a circuit pattern and an overlay mark from a pattern dimension, illumination conditions and the wave aberration of an exposure lens, feeds a correction value based on the predicted difference back to an exposure device and modifies an overlay inspection data control limit.

3. 发明授权

US06721940B2 Exposure processing method and exposure system for the same 失效
标题翻译：曝光处理方法和曝光系统相同
公开(公告)号：US06721940B2
公开(公告)日：2004-04-13
申请号：US10107934
申请日：2002-03-26
申请人： Toshiharu Miwa , Yasuhiro Yoshitake , Tetsuya Yamazaki
发明人： Toshiharu Miwa , Yasuhiro Yoshitake , Tetsuya Yamazaki
IPC分类号： G06F1750
CPC分类号： G03F7/705 , G03F7/70525 , G03F7/70558 , G03F7/706 , G03F7/70641
摘要： In lithographic (exposure) processing for semiconductor device fabrication, the task of extracting exposure parameters is performed by calculating exposure energy and focus offset using a test wafer for each exposure device, because fluctuations due to differences between exposure devices are large. For the fabrication of semiconductor devices in multiple-product small-lot production, the number of times the task of extracting exposure parameters has to be performed increases, so that the operation ratio of the exposure devices decreases, and the TAT of the semiconductor device fabrication increases. Moreover, as the miniaturization of semiconductor devices advances, differences between the exposure devices cause defects due to the exposure processing, and the yield of the semiconductor device fabrication decreases. In an improved method of exposure processing for semiconductor devices, the exposure energy and focus offset according to the illumination parameters for an exposure device and optical projection system, using information regarding the projection lens aberrations of a plurality of exposure devices, the photoresist parameters, and the circuit pattern information, as determined beforehand, are calculated using an optical development simulator, and the exposure processing is carried out using an exposure device, selected from a plurality of exposure devices, in which the process window is within a certain tolerance value.
摘要翻译：在用于半导体器件制造的光刻（曝光）处理中，由于曝光装置之间的差异引起的波动，所以通过使用每个曝光装置的测试晶片计算曝光能量和聚焦偏移来执行提取曝光参数的任务。对于多产品小批量生产中的半导体器件的制造，必须执行提取曝光参数的任务的次数增加，使得曝光装置的操作比降低，并且半导体器件制造的TAT 增加此外，随着半导体器件的小型化的发展，曝光装置之间的差异导致由于曝光处理而引起的缺陷，并且半导体器件制造的成品率降低。在半导体器件的曝光处理的改进方法中，使用关于多个曝光装置的投影透镜像差的信息，光致抗蚀剂参数以及与多个曝光装置的投影透镜像差有关的信息，根据曝光装置和光学投影系统的照明参数的曝光能量和聚焦偏移使用光学显影模拟器计算预先确定的电路图案信息，并且使用从多个曝光装置中选择的曝光装置进行曝光处理，其中处理窗口在某一公差值内。

4. 发明授权

US06653032B2 Exposure method 失效
标题翻译：曝光方法
公开(公告)号：US06653032B2
公开(公告)日：2003-11-25
申请号：US10026991
申请日：2001-12-18
申请人： Toshiharu Miwa , Yasuhiro Yoshitake , Tetsuya Yamazaki
发明人： Toshiharu Miwa , Yasuhiro Yoshitake , Tetsuya Yamazaki
IPC分类号： G03F900
CPC分类号： G03F7/705 , G03F7/70525 , G03F7/70558 , G03F7/706 , G03F7/70641
摘要： In lithographic (exposure) processing for semiconductor device fabrication, the task of extracting exposure parameters is performed by calculating exposure energy and focus offset using a test wafer for each exposure device, because fluctuations due to differences between exposure devices are large. For the fabrication of semiconductor devices in multiple-product small-lot production, the number of times the task of extracting exposure parameters has to be performed increases, so that the operation ratio of the exposure devices decreases, and the TAT of the semiconductor device fabrication increases. Moreover, as the miniaturization of semiconductor devices advances, differences between the exposure devices cause defects due to the exposure processing, and the yield of the semiconductor device fabrication decreases. In an improved method of exposure processing for semiconductor devices, the exposure energy and focus offset according to the illumination parameters for an exposure device and optical projection system, using information regarding the projection lens aberrations of a plurality of exposure devices, the photoresist parameters, and the circuit pattern information, as determined beforehand, are calculated using an optical development simulator, and the exposure processing is carried out using an exposure device, selected from a plurality of exposure devices, in which the process window is within a certain tolerance value.
摘要翻译：在用于半导体器件制造的光刻（曝光）处理中，由于曝光装置之间的差异引起的波动，所以通过使用每个曝光装置的测试晶片计算曝光能量和聚焦偏移来执行提取曝光参数的任务。对于多产品小批量生产中的半导体器件的制造，必须执行提取曝光参数的任务的次数增加，使得曝光装置的操作比降低，并且半导体器件制造的TAT 增加此外，随着半导体器件的小型化的发展，曝光装置之间的差异导致由于曝光处理而引起的缺陷，并且半导体器件制造的成品率降低。在半导体器件的曝光处理的改进方法中，使用关于多个曝光装置的投影透镜像差的信息，光致抗蚀剂参数以及与多个曝光装置的投影透镜像差有关的信息，根据曝光装置和光学投影系统的照明参数的曝光能量和聚焦偏移使用光学显影模拟器计算预先确定的电路图案信息，并且使用从多个曝光装置中选择的曝光装置进行曝光处理，其中处理窗口在某一公差值内。

5. 发明授权

US08227265B2 Method of measuring pattern shape, method of manufacturing semiconductor device, and process control system 有权
标题翻译：测量图案形状的方法，制造半导体器件的方法以及过程控制系统
公开(公告)号：US08227265B2
公开(公告)日：2012-07-24
申请号：US12823024
申请日：2010-06-24
申请人： Kana Nemoto , Shunichi Matsumoto , Yasuhiro Yoshitake
发明人： Kana Nemoto , Shunichi Matsumoto , Yasuhiro Yoshitake
IPC分类号： H01L21/66
CPC分类号： G01B11/24 , G01B2210/56 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of measuring a pattern shape of performing a shape measurement of a semiconductor pattern at a high accuracy even when a process margin is narrow with respect to miniaturization of a semiconductor device is provided. In the method of measuring a pattern shape, when a best-match calculated waveform cannot be selected, at least one parameter among shape parameters is set as a fixed value based on information obtained by another measurement apparatus that uses a measurement method independent to the pattern shape measurement, a matching of a library and a detected waveform is performed again, a best-match calculated waveform is selected, and shape information of an object pattern is obtained from the best-match calculated waveform.
摘要翻译：提供了即使当相对于半导体器件的小型化而处理裕度窄时，也可以高精度地测量执行半导体图案的形状测量的图案形状的方法。在测定图案形状的方法中，当不能选择最佳匹配计算波形时，基于使用独立于图案的测量方法的另一测量装置获得的信息，将形状参数中的至少一个参数设置为固定值形状测量，再次执行库和检测波形的匹配，选择最佳匹配计算波形，并根据最佳匹配计算波形获得目标图形的形状信息。

6. 发明授权

US06841321B2 Method and system for processing a semi-conductor device 失效
标题翻译：用于加工半导体器件的方法和系统
公开(公告)号：US06841321B2
公开(公告)日：2005-01-11
申请号：US10052513
申请日：2002-01-23
申请人： Shunichi Matsumoto , Yasuhiro Yoshitake , Yoshiyuki Miyamoto
发明人： Shunichi Matsumoto , Yasuhiro Yoshitake , Yoshiyuki Miyamoto
IPC分类号： G03F7/20 , H01L21/027 , G03C5/00 , G03F9/00
CPC分类号： G03F7/70525 , G03F7/70458 , G03F7/70533 , G03F7/70591 , G03F7/70633
摘要： A method and a system for processing a semiconductor device intended to improve the overlay accuracy of a semiconductor device product, particularly in its device area, in carrying out the mix-and-match exposure process are designed to calculate the difference of exposure distortions between two layers in the device area and the difference of exposure distortions between the two layers at the overlay measurement mark position from data of exposure field distortions of two exposure tools used for the mix-and-match exposure process and data of device area and overlay measurement mark position of the product, calculate a modification value which relates both differences to each other, calculate a first exposure condition correction value from the measurement result of overlay, and carry out the exposure process based on a second exposure condition correction value which is evaluated by modifying the first exposure condition correction value with the modification value.
摘要翻译：设计了一种用于处理半导体器件的方法和系统，旨在提高半导体器件产品的覆盖精度，特别是在其器件区域中进行混合匹配曝光过程，以计算两者之间的曝光失真的差异设备区域中的层和来自覆盖测量标记位置处的两层之间的曝光失真的差异与用于混合和匹配曝光处理的两个曝光工具的曝光场失真数据以及设备区域和覆盖测量标记的数据计算产品的位置，计算相互之间的差异的修正值，根据覆盖的测量结果计算第一曝光条件校正值，并且基于通过修改来评估的第二曝光条件校正值来执行曝光处理具有修改值的第一曝光条件校正值。

7. 发明申请

US20110020956A1 METHOD OF MEASURING PATTERN SHAPE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESS CONTROL SYSTEM 有权
标题翻译：测量图形的方法，制造半导体器件的方法和工艺控制系统
公开(公告)号：US20110020956A1
公开(公告)日：2011-01-27
申请号：US12823024
申请日：2010-06-24
申请人： Kana NEMOTO , Shunichi Matsumoto , Yasuhiro Yoshitake
发明人： Kana NEMOTO , Shunichi Matsumoto , Yasuhiro Yoshitake
IPC分类号： H01L21/66 , G01B11/24
CPC分类号： G01B11/24 , G01B2210/56 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method of measuring a pattern shape of performing a shape measurement of a semiconductor pattern at a high accuracy even when a process margin is narrow with respect to miniaturization of a semiconductor device is provided. In the method of measuring a pattern shape, when a best-match calculated waveform cannot be selected, at least one parameter among shape parameters is set as a fixed value based on information obtained by another measurement apparatus that uses a measurement method independent to the pattern shape measurement, a matching of a library and a detected waveform is performed again, a best-match calculated waveform is selected, and shape information of an object pattern is obtained from the best-match calculated waveform.
摘要翻译：提供了即使当相对于半导体器件的小型化而处理裕度窄时，也可以高精度地测量执行半导体图案的形状测量的图案形状的方法。在测定图案形状的方法中，当不能选择最佳匹配的计算波形时，基于使用独立于图案的测量方法的另一测量装置获得的信息，将形状参数中的至少一个参数设置为固定值形状测量，再次执行库和检测波形的匹配，选择最佳匹配计算波形，并根据最佳匹配计算波形获得目标图形的形状信息。

8. 发明申请

US20090002695A1 Method and Apparatus for Reviewing Defect 有权
标题翻译：检查缺陷的方法和装置
公开(公告)号：US20090002695A1
公开(公告)日：2009-01-01
申请号：US12141955
申请日：2008-06-19
申请人： Keiya SAITO , Yasuhiro Yoshitake , Shunichi Matsumoto , Hidetoshi Nishiyama
发明人： Keiya SAITO , Yasuhiro Yoshitake , Shunichi Matsumoto , Hidetoshi Nishiyama
IPC分类号： G01N21/88 , G01N23/00
CPC分类号： G01N21/8806 , G01N21/9501 , G01N2021/8822 , G01N2021/8861 , G02B21/0032 , G02B21/0072
摘要： The present invention provides an apparatus and a method for reviewing a defect with high throughput by detecting the defect to be reviewed with high sensitivity, comprising: an optical microscope; a correction means; and a scanning electron microscope which reviews the defect existed on the sample; wherein the optical microscope has: an optical height detection system which optically detects a vertical position of an upper surface of the sample placed on the stage; an illumination optical system which illuminates the defect with light; an image detection optical system which converges and detects reflected light or scattered light generated from the defect illuminated by the illumination optical system to obtain an image signal; and a focus adjusting means which adjusts a focus position of the optical microscope based on the vertical position of the upper surface of the sample, which is detected by the optical height detection system.
摘要翻译：本发明提供一种通过以高灵敏度检测待检查的缺陷来检查具有高通量的缺陷的装置和方法，包括：光学显微镜; 修正手段; 和扫描电子显微镜检查样品上存在的缺陷; 其中所述光学显微镜具有：光学高度检测系统，其光学地检测放置在所述台上的样品的上表面的垂直位置; 用光照亮缺陷的照明光学系统; 会聚和检测由照明光学系统照射的缺陷产生的反射光或散射光以获得图像信号的图像检测光学系统; 以及焦点调节装置，其基于由光学高度检测系统检测到的样品的上表面的垂直位置来调节光学显微镜的焦点位置。

9. 发明授权

US06909930B2 Method and system for monitoring a semiconductor device manufacturing process 有权
标题翻译：用于监测半导体器件制造工艺的方法和系统
公开(公告)号：US06909930B2
公开(公告)日：2005-06-21
申请号：US10124412
申请日：2002-04-18
申请人： Chie Shishido , Yuji Takagi , Masahiro Watanabe , Yasuhiro Yoshitake , Shunichi Matsumoto , Takashi Iizumi , Osamu Komuro , Maki Tanaka , Hidetoshi Morokuma
发明人： Chie Shishido , Yuji Takagi , Masahiro Watanabe , Yasuhiro Yoshitake , Shunichi Matsumoto , Takashi Iizumi , Osamu Komuro , Maki Tanaka , Hidetoshi Morokuma
IPC分类号： H01L21/00 , G06F19/00
CPC分类号： H01L21/67276
摘要： To realize a method for detecting variations in conditions (drift of the exposure and drift of the focus) in exposure equipment at a product wafer level in lithography process, the process is specified in such a way that calculation results of feature quantities such as electron beam images, line profiles, dimensions, etc. under various sets of the exposure and the focus are stored as a library, and an electron beam image of the product wafer is compared with these pieces of data in the library so that detection of drifts of the exposure and the focus a check of the results on the screen can easily be performed.
摘要翻译：为了实现用于在光刻工艺中在产品晶片级的曝光设备中检测条件变化（曝光漂移和焦点偏移）的方法，以这样的方式指定特征量的计算结果，例如电子束将各种曝光和焦点下的图像，线轮廓，尺寸等存储为库，并将产品晶片的电子束图像与库中的这些数据进行比较，以便检测到曝光和重点检查屏幕上的结果可以很容易地执行。

10. 发明授权

US08045146B2 Method and apparatus for reviewing defect 有权
标题翻译：检查缺陷的方法和装置
公开(公告)号：US08045146B2
公开(公告)日：2011-10-25
申请号：US12141955
申请日：2008-06-19
申请人： Keiya Saito , Yasuhiro Yoshitake , Shunichi Matsumoto , Hidetoshi Nishiyama
发明人： Keiya Saito , Yasuhiro Yoshitake , Shunichi Matsumoto , Hidetoshi Nishiyama
IPC分类号： G01N21/00 , G01J4/00
CPC分类号： G01N21/8806 , G01N21/9501 , G01N2021/8822 , G01N2021/8861 , G02B21/0032 , G02B21/0072
摘要： The present invention provides an apparatus and a method for reviewing a defect with high throughput by detecting the defect to be reviewed with high sensitivity, comprising: an optical microscope; a correction means; and a scanning electron microscope which reviews the existing defect on the sample; wherein the optical microscope has: an optical height detection system which optically detects a vertical position of an upper surface of the sample placed on the stage; an illumination optical system which illuminates the defect with light; an image detection optical system which converges and detects reflected light or scattered light generated from the defect illuminated by the illumination optical system to obtain an image signal; and a focus adjusting means which adjusts a focus position of the optical microscope based on the vertical position of the upper surface of the sample, which is detected by the optical height detection system.
摘要翻译：本发明提供一种通过以高灵敏度检测待检查的缺陷来检查具有高通量的缺陷的装置和方法，包括：光学显微镜; 修正手段; 和扫描电子显微镜，用于回顾样品上现有的缺陷; 其中所述光学显微镜具有：光学高度检测系统，其光学地检测放置在所述台上的样品的上表面的垂直位置; 用光照亮缺陷的照明光学系统; 会聚和检测由照明光学系统照射的缺陷产生的反射光或散射光以获得图像信号的图像检测光学系统; 以及焦点调节装置，其基于由光学高度检测系统检测到的样本的上表面的垂直位置来调整光学显微镜的对焦位置。

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