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1. 发明授权

US08994060B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08994060B2
公开(公告)日：2015-03-31
申请号：US13164893
申请日：2011-06-21
申请人： Yasuhiro Jinbo , Toshiyuki Isa , Tatsuya Honda
发明人： Yasuhiro Jinbo , Toshiyuki Isa , Tatsuya Honda
IPC分类号： H01L33/00 , H01L29/786 , H01L27/12 , H01L27/28 , H01L49/02 , H01L21/20 , H01L27/32 , H01L51/00 , H01L51/56
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02565 , H01L21/2026 , H01L27/12 , H01L27/1214 , H01L27/1266 , H01L27/283 , H01L27/3258 , H01L27/3274 , H01L28/40 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/4908 , H01L29/495 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L51/003 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5338
摘要： An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，该半导体器件是柔性的，其中使用比较低温（小于500℃）的工艺制造的元件与衬底分离。在玻璃基板上形成钼膜之后，在钼膜上形成氧化钼膜，在氧化钼膜上层叠非金属无机膜和有机化合物膜，通过比较低温（少于使用现有的用于大玻璃基板的制造设备来形成工艺，元件与玻璃基板分离。

2. 发明授权

US07968382B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07968382B2
公开(公告)日：2011-06-28
申请号：US12019361
申请日：2008-01-24
申请人： Yasuhiro Jinbo , Toshiyuki Isa , Tatsuya Honda
发明人： Yasuhiro Jinbo , Toshiyuki Isa , Tatsuya Honda
IPC分类号： H01L21/00 , H01L21/84 , H01L51/40
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02565 , H01L21/2026 , H01L27/12 , H01L27/1214 , H01L27/1266 , H01L27/283 , H01L27/3258 , H01L27/3274 , H01L28/40 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/4908 , H01L29/495 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L51/003 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5338
摘要： An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，该半导体器件是柔性的，其中使用比较低温（小于500℃）的工艺制造的元件与衬底分离。在玻璃基板上形成钼膜之后，在钼膜上形成氧化钼膜，在氧化钼膜上层叠非金属无机膜和有机化合物膜，通过比较低温（少于使用现有的用于大玻璃基板的制造设备来形成工艺，元件与玻璃基板分离。

3. 发明授权

US08637866B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08637866B2
公开(公告)日：2014-01-28
申请号：US12490447
申请日：2009-06-24
申请人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki , Takuya Hirohashi
发明人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki , Takuya Hirohashi
IPC分类号： H01L29/72
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.
摘要翻译：至少在源区和漏区侧，薄膜晶体管包括作为缓冲层的半导体层，该半导体层含有氮并且包括在栅极绝缘层和源极和漏极区之间的非晶结构中的晶体区域。与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。

4. 发明授权

US08119468B2 Thin film transistor and method for manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08119468B2
公开(公告)日：2012-02-21
申请号：US12423123
申请日：2009-04-14
申请人： Hidekazu Miyairi , Koji Dairiki , Yuji Egi , Yasuhiro Jinbo , Toshiyuki Isa
发明人： Hidekazu Miyairi , Koji Dairiki , Yuji Egi , Yasuhiro Jinbo , Toshiyuki Isa
IPC分类号： H01L21/00 , H01L29/786
CPC分类号： H01L27/1288 , C23C16/0272 , C23C16/24 , C23C16/4404 , H01L27/1214 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78621 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a channel formation region; and a semiconductor layer including an impurity element imparting one conductivity type. The semiconductor layer exists in a state that a plurality of crystalline particles is dispersed in an amorphous silicon and that the crystalline particles have an inverted conical or inverted pyramidal shape. The crystalline particles grow approximately radially in a direction in which the semiconductor layer is deposited. Vertexes of the inverted conical or inverted pyramidal crystal particles are located apart from an interface between the gate insulating layer and the semiconductor layer.
摘要翻译：公开了一种薄膜晶体管，其在具有绝缘表面的衬底上方包括覆盖栅电极的栅绝缘层; 用作沟道形成区域的半导体层; 以及包含赋予一种导电型的杂质元素的半导体层。半导体层以多个结晶粒子分散在非晶硅中的状态存在，并且结晶粒子具有倒锥形或倒棱锥形状。晶体颗粒沿半导体层沉积的方向大致径向生长。倒锥形或倒锥形晶体颗粒的顶点位于与栅极绝缘层和半导体层之间的界面之外。

5. 发明授权

US08513664B2 Thin film transistor, semiconductor device and electronic device 有权
标题翻译：薄膜晶体管，半导体器件和电子器件
公开(公告)号：US08513664B2
公开(公告)日：2013-08-20
申请号：US12490458
申请日：2009-06-24
申请人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki
发明人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor includes, as a buffer layer, an amorphous semiconductor layer having nitrogen or an NH group between a gate insulating layer and source and drain regions and at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.
摘要翻译：薄膜晶体管包括作为缓冲层的至少在源极和漏极区域上具有氮或NH基的非晶半导体层，栅极绝缘层与源极和漏极区之间。与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。

6. 发明授权

US08138032B2 Method for manufacturing thin film transistor having microcrystalline semiconductor film 有权
标题翻译：具有微晶半导体膜的薄膜晶体管的制造方法
公开(公告)号：US08138032B2
公开(公告)日：2012-03-20
申请号：US12423111
申请日：2009-04-14
申请人： Hidekazu Miyairi , Koji Dairiki , Yuji Egi , Yasuhiro Jinbo , Toshiyuki Isa
发明人： Hidekazu Miyairi , Koji Dairiki , Yuji Egi , Yasuhiro Jinbo , Toshiyuki Isa
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78621 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： A thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which includes a plurality of crystalline regions in an amorphous structure and which forms a channel formation region, in contact with the gate insulating layer; a semiconductor layer including an impurity element imparting one conductivity type, which forms source and drain regions; and a buffer layer including an amorphous semiconductor between the semiconductor layer and the semiconductor layer including an impurity element imparting one conductivity type. The crystalline regions have an inverted conical or inverted pyramidal crystal particle which grows approximately radially in a direction in which the semiconductor layer is deposited, from a position away from an interface between the gate insulating layer and the semiconductor layer.
摘要翻译：薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅绝缘层; 半导体层，其包括与所述栅极绝缘层接触的非晶结构中的多个结晶区域，并形成沟道形成区域; 包含赋予一种导电类型的杂质元素的半导体层，其形成源区和漏区; 以及包括在半导体层和半导体层之间的非晶半导体的缓冲层，其包括赋予一种导电类型的杂质元素。晶体区域具有从远离栅极绝缘层和半导体层之间的界面的位置沿着沉积半导体层的方向大致径向生长的倒锥形或倒棱锥晶体颗粒。

7. 发明授权

US09054206B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US09054206B2
公开(公告)日：2015-06-09
申请号：US12222109
申请日：2008-08-01
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Foruno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Foruno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/84 , H01L29/786 , H01L29/04 , H01L29/417 , H01L29/49 , H01L29/66 , H01L21/02 , H01L21/67 , H01L27/12
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/0262 , H01L21/67207 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.

8. 发明授权

US09048327B2 Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device 有权
标题翻译：微晶半导体膜及其制造方法以及半导体装置的制造方法
公开(公告)号：US09048327B2
公开(公告)日：2015-06-02
申请号：US13355340
申请日：2012-01-20
申请人： Tetsuhiro Tanaka , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
发明人： Tetsuhiro Tanaka , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
IPC分类号： H01L21/00 , H01L29/786 , H01L21/02 , H01L29/04 , H01L29/66
CPC分类号： H01L29/78696 , H01L21/02422 , H01L21/0245 , H01L21/02502 , H01L21/02513 , H01L21/02532 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78648 , H01L29/78654 , H01L29/78678
摘要： An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm3 and lower than or equal to 2.35 g/cm3, preferably higher than or equal to 2.30 g/cm3 and lower than or equal to 2.33 g/cm3.
摘要翻译：本发明的一个实施方案是具有大于或等于70nm且小于或等于100nm的厚度的微晶半导体膜，并且包括从微晶半导体膜的表面部分地突出的晶粒。晶粒具有取向平面，并且包括尺寸为13nm以上的微晶。此外，微晶半导体膜的膜密度高于或等于2.25g / cm 3，低于或等于2.35g / cm 3，优选高于或等于2.30g / cm 3，低于或等于2.33g / cm3。

9. 发明授权

US08859404B2 Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device 有权
标题翻译：微晶半导体膜的形成方法及半导体装置的制造方法
公开(公告)号：US08859404B2
公开(公告)日：2014-10-14
申请号：US13211565
申请日：2011-08-17
申请人： Ryu Komatsu , Yasuhiro Jinbo , Hidekazu Miyairi
发明人： Ryu Komatsu , Yasuhiro Jinbo , Hidekazu Miyairi
IPC分类号： C23C16/24 , H01L21/20 , H01L21/36 , H01L21/02 , H01L29/786 , H01L31/18 , H01L31/0368 , H01L29/04 , H01L29/66
CPC分类号： H01L21/02532 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78648 , H01L29/78672 , H01L29/78678 , H01L29/78696 , H01L31/03685 , H01L31/068 , H01L31/1824 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A seed crystal including mixed phase grains having high crystallinity at a low density is formed under a first condition over an insulating film, and then a first microcrystalline semiconductor film is formed over the seed crystal under a second condition that allows the mixed phase grains to grow and a space between the mixed phase grains to be filled. Then, a second microcrystalline semiconductor film is formed over the first microcrystalline semiconductor film under a third condition that allows formation of a microcrystalline semiconductor film having high crystallinity without increasing the space between the mixed phase grains included in the first microcrystalline semiconductor film.
摘要翻译：在第一条件下，在绝缘膜上形成包含低密度结晶度的混合相的晶种，然后在允许混合晶粒生长的第二条件下在晶种上形成第一微晶半导体膜以及要填充的混合相颗粒之间的空间。然后，在允许形成具有高结晶度的微晶半导体膜而不增加包含在第一微晶半导体膜中的混晶相之间的空间的第三条件下，在第一微晶半导体膜上形成第二微晶半导体膜。

10. 发明授权

US08823030B2 Light-emitting device and lighting device 有权
标题翻译：发光装置及照明装置
公开(公告)号：US08823030B2
公开(公告)日：2014-09-02
申请号：US13560046
申请日：2012-07-27
申请人： Yasuhiro Jinbo , Kensuke Yoshizumi
发明人： Yasuhiro Jinbo , Kensuke Yoshizumi
IPC分类号： H01L33/00
CPC分类号： H01L51/5265 , H01L51/504 , H01L51/5212 , H01L51/5275 , H01L2251/5361
摘要： A light-emitting device which has various emission colors and can be manufactured efficiently and easily is provided. A first conductive layer formed of a semi-transmissive and semi-reflective conductive film is provided in a first light-emitting element region, so that the intensity of light in a specific wavelength region is increased with a cavity effect. As a result, the light-emitting device as a whole can emit desired light. When the first conductive layer is formed using a material with low electric resistance, voltage drop in a transparent conductive layer in the light-emitting device can be prevented. Accordingly, a light-emitting device with less emission unevenness can be manufactured. By applying such a structure to a white-light-emitting device, desired white light emission or white light emission with an excellent color rendering property can be obtained. Further, a large-area lighting device including a white-light-emitting device with less emission unevenness can be provided.
摘要翻译：提供具有各种发光颜色并且可以有效且容易地制造的发光装置。由半透射半导体膜形成的第一导电层设置在第一发光元件区域中，使得特定波长区域中的光的强度随腔效应而增加。结果，整个发光装置可以发出所需的光。当使用具有低电阻的材料形成第一导电层时，可以防止发光器件中的透明导电层中的电压降。因此，可以制造发光不均匀性较差的发光元件。通过将这种结构应用于白色发光元件，可以获得具有优异显色特性的期望的白色发光或白色发光。此外，可以提供包括具有较少发射不均匀性的白光发射装置的大面积照明装置。

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