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1. 发明授权

US06972405B2 Nanoscale standard sample and its manufacturing method 有权
标题翻译：纳米级标准样品及其制造方法
公开(公告)号：US06972405B2
公开(公告)日：2005-12-06
申请号：US10717485
申请日：2003-11-21
申请人： Yasuhira Nagakubo , Mitsuhiko Yamada , Kouichi Kurosawa
发明人： Yasuhira Nagakubo , Mitsuhiko Yamada , Kouichi Kurosawa
IPC分类号： G01B15/00 , B23K26/00 , G01D18/00 , G01N1/28 , G01Q40/02 , H01J37/20 , H01J37/28 , H01J49/00
CPC分类号： H01J37/28 , H01J2237/2816 , H01J2237/2826
摘要： An indicator indicating the direction of a diffraction grating pattern is provided on a chip so that the direction of the pattern can be accurately determined. The indicator includes an anisotropic shape of the chip and the formation of a marking-off line or a mark on the chip, allowing the direction of the diffraction grating pattern to be determined from the external appearance of the chip. As a result, the chip can be mounted on a sample base while accurately determining the direction of the diffraction grating pattern, thus allowing a calibration operation to be performed accurately and reliably.
摘要翻译：在芯片上设置指示衍射光栅图案的方向的指示器，从而可以精确地确定图案的方向。指示器包括芯片的各向异性形状以及在芯片上形成标记线或标记，从而可以从芯片的外观确定衍射光栅图案的方向。结果，芯片可以安装在样品基底上，同时精确地确定衍射光栅图案的方向，从而允许准确可靠地进行校准操作。

2. 发明申请

US20050017162A1 Nanoscale standard sample and its manufacturing method 有权
公开(公告)号：US20050017162A1
公开(公告)日：2005-01-27
申请号：US10717485
申请日：2003-11-21
申请人： Yasuhira Nagakubo , Mitsuhiko Yamada , Kouichi Kurosawa
发明人： Yasuhira Nagakubo , Mitsuhiko Yamada , Kouichi Kurosawa
IPC分类号： G01B15/00 , B23K26/00 , G01D18/00 , G01N1/28 , G01Q40/02 , H01J37/20 , H01J37/28 , H01J49/00
CPC分类号： H01J37/28 , H01J2237/2816 , H01J2237/2826
摘要： An indicator indicating the direction of a diffraction grating pattern is provided on a chip so that the direction of the pattern can be accurately determined. The indicator includes an anisotropic shape of the chip and the formation of a marking-off line or a mark on the chip, allowing the direction of the diffraction grating pattern to be determined from the external appearance of the chip. As a result, the chip can be mounted on a sample base while accurately determining the direction of the diffraction grating pattern, thus allowing a calibration operation to be performed accurately and reliably.

3. 发明授权

US5322919A Process for producing a polycarbonate in inert solvent 失效
标题翻译：在惰性溶剂中制备聚碳酸酯的方法
公开(公告)号：US5322919A
公开(公告)日：1994-06-21
申请号：US796055
申请日：1991-11-20
申请人： Kouichi Kurosawa , Shigeki Kuze , Noriyuki Kunishi , Masaya Okamoto
发明人： Kouichi Kurosawa , Shigeki Kuze , Noriyuki Kunishi , Masaya Okamoto
IPC分类号： C08G64/20 , C08G64/30
CPC分类号： C08G64/30
摘要： A process for producing polycarbonates which comprises transesterifying by reacting (A) at least one compound selected from the group consisting of aromatic dihydroxy compounds, aliphatic dihydroxy compounds, bisesters of aromatic dihydroxy compounds, bisesters of aliphatic dihydroxy compounds, carbonates of aromatic dihydroxy compounds and carbonates of aliphatic dihydroxy compounds, with (B) at least one compound selected from the group of diaryl carbonates, dialkyl carbonates, and alkylaryl carbonates, at a transesterification temperature of 100.degree. C. to 330.degree. C. in the presence of an inert solvent in an amount of 1 to 60% by weight based on the total of the theoretical amount of polycarbonate produced from the said compounds (A) and (B) and the amount of the inert solvent. According to the present invention, a polycarbonate which is excellent in color tone (transparency), heat resistance, and water resistance can be efficiently and simply produced at a low cost.
摘要翻译：一种制备聚碳酸酯的方法，其包括通过使（A）至少一种选自芳族二羟基化合物，脂族二羟基化合物，芳族二羟基化合物的混合物，脂族二羟基化合物的混合物，芳族二羟基化合物的碳酸酯和碳酸酯的脂肪族二羟基化合物与（B）至少一种选自碳酸二芳基酯，碳酸二烷基酯和碳酸烷基芳基酯的化合物在100℃至330℃的酯交换温度下在惰性溶剂存在下反应基于由所述化合物（A）和（B）生产的聚碳酸酯的理论量的总和与惰性溶剂的量的总量，为1至60重量％。根据本发明，可以低成本有效且简单地制造色调（透明性），耐热性和耐水性优异的聚碳酸酯。

4. 发明授权

US08040146B2 Inspection apparatus having a heating mechanism for performing sample temperature regulation 有权
标题翻译：具有用于进行样品温度调节的加热机构的检查装置
公开(公告)号：US08040146B2
公开(公告)日：2011-10-18
申请号：US12693266
申请日：2010-01-25
申请人： Takeshi Sunaoshi , Kouichi Kurosawa , Takeshi Sato , Masaaki Komori
发明人： Takeshi Sunaoshi , Kouichi Kurosawa , Takeshi Sato , Masaaki Komori
IPC分类号： G01R31/308
CPC分类号： G01R31/2874 , G01R31/311
摘要： There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.
摘要翻译：提供了可以局部地进行样品温度调节的检查装置和方法，从而可以抑制样品漂移。包括保持半导体样品118的样品台109，用于测量半导体样品118上的半导体器件的电特性的多个探针106，向探针106施加电压和/或电流的电源，检测器测量与探针接触的样品上的半导体器件的电特性，以及在半导体样品118的测量部分上照射电磁波的电磁波照射机构。

5. 发明申请

US20110005288A1 Water Jet Peening Method and Apparatus Thereof 有权
标题翻译：喷水喷丸处理方法及装置
公开(公告)号：US20110005288A1
公开(公告)日：2011-01-13
申请号：US12830169
申请日：2010-07-02
申请人： Yuji MATSUI , Masahiro Tooma , Atsushi Baba , Kouichi Kurosawa , Fujio Yoshikubo
发明人： Yuji MATSUI , Masahiro Tooma , Atsushi Baba , Kouichi Kurosawa , Fujio Yoshikubo
IPC分类号： B21D26/02
CPC分类号： C21D7/06 , C21D11/00
摘要： A high-pressure water jet is injected from a nozzle scanned and a shock wave generated due to the collapse of bubbles included in the water jet is impacted on a WJP execution object. Tensile residual stress close to the surface of the WJP execution object is improved to compressive residual stress. The shock wave is detected by a pressure sensor and a shock wave generation frequency is obtained. Whether the obtained shock wave generation frequency is larger than a set value or not is decided. When the shock wave generation frequency is larger than the set value, a high-pressure pump is stopped and the injection of the water jet from the nozzle is stopped. When the shock wave generation frequency is equal to or smaller than the set value, the operation condition of the high-pressure pump is changed. The pressure of the water jet injected from the nozzle is increased and the WJP is executed for a part of the WJP execution object where the shock wave generation frequency is equal to or smaller than the set value. Improvement effect of the residual stress of the WJP execution object can be confirmed more accurately.
摘要翻译：从扫描的喷嘴喷射高压水射流，并且由于包含在水射流中的气泡的崩溃而产生的冲击波被冲击到WJP执行对象上。靠近WJP执行物体表面的拉伸残余应力提高到压缩残余应力。通过压力传感器检测冲击波，获得冲击波产生频率。确定获得的冲击波产生频率是否大于设定值。当冲击波产生频率大于设定值时，停止高压泵并停止喷嘴的喷射。当冲击波产生频率等于或小于设定值时，改变高压泵的运行状态。从喷嘴喷射的喷水的压力增加，对于冲击波产生频率等于或小于设定值的WJP执行对象的一部分执行WJP。可以更准确地确认WJP执行对象的残余应力的改善效果。

6. 发明授权

US07081625B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US07081625B2
公开(公告)日：2006-07-25
申请号：US10700525
申请日：2003-11-05
申请人： Masanari Furiki , Kouichi Kurosawa , Takehiko Konno , Ryuichi Funatsu
发明人： Masanari Furiki , Kouichi Kurosawa , Takehiko Konno , Ryuichi Funatsu
IPC分类号： G01N23/00 , G21K7/00 , G01R31/305 , G01R31/25
CPC分类号： H01J37/261 , G01N23/225 , H01J37/28 , H01J2237/2817
摘要： The object of the present invention is to transmit the position information of a defect that has been specified by means of a circuit pattern inspection apparatus quickly and precisely so that the position information is efficiently used in another apparatus. Marking is carried out on the peripheral area of the defect by use of a charged particle beam irradiation mechanism of the inspection apparatus. The marking realizes sharing of the defect position information with another apparatus. The marking technique includes deposition of a deposit and charging up by means of irradiation of a charged particle beam. The marking in the inspection apparatus allows the defect position information to be transmitted to another apparatus more correctly and easily, and as a result, analysis accuracy is improved and analysis time is shortened.
摘要翻译：本发明的目的是通过电路图形检查装置快速且精确地发送已经指定的缺陷的位置信息，使得位置信息在另一装置中被有效地使用。通过使用检查装置的带电粒子束照射机构在缺陷的周边区域进行标记。该标记实现与另一装置共享缺陷位置信息。标记技术包括通过照射带电粒子束沉积沉积物并充电。检查装置中的标记允许将缺陷位置信息更正确且容易地传送到另一装置，结果提高了分析精度，缩短了分析时间。

7. 发明授权

US08776565B2 Evaluation method of residual stress in water jet peening and method of executing water jet peening 有权
标题翻译：喷水喷丸硬化残余应力评价方法及喷水喷丸喷丸处理方法
公开(公告)号：US08776565B2
公开(公告)日：2014-07-15
申请号：US13036223
申请日：2011-02-28
申请人： Hisamitu Hatou , Noboru Saitou , Kouichi Kurosawa , Fujio Yoshikubo , Yuji Matsui , Masashi Fukaya
发明人： Hisamitu Hatou , Noboru Saitou , Kouichi Kurosawa , Fujio Yoshikubo , Yuji Matsui , Masashi Fukaya
IPC分类号： C21D7/06
CPC分类号： B23P9/04 , C21D1/54 , C21D7/04 , C21D7/06
摘要： An evaluation method of residual stress in water jet peening includes a step of creating an analytical model including meshes according to a water jet peening (WJP) object, the shape of a nozzle, and an injection distance, a step of inputting WJP execution conditions, a step of calculating the internal pressure pBi of a cavitation bubble and a bubble number density ngi through jet flow analysis for a jet flow jetting from the nozzle, a step of calculating cavitation energy according to the internal pressure pBi of a cavitation bubble and a bubble number density ngi (S4), a step of calculating the burst energy of cavitation bubbles from the cavitation energy C, and a step of calculating the compressive residual stress of the WJP object from the collapse pressure of cavitation bubbles. Accordingly, the residual stress of the WJP object can be evaluated precisely in a shorter time.
摘要翻译：水喷射喷丸硬化的残余应力的评价方法包括：创建包括水喷射喷丸（WJP）对象的网孔，喷嘴形状和喷射距离的分析模型的步骤，输入WJP执行条件的步骤，通过从喷嘴喷射的喷射流的喷射流分析来计算空化气泡的内部压力pBi和气泡数密度ngi的步骤，根据空化气泡和气泡的内部压力pBi计算空化能量的步骤数值密度ngi（S4），从空化能量C计算空化气泡的爆发能量的步骤，以及从空化气泡的塌陷压力计算WJP物体的压缩残余应力的步骤。因此，可以在更短的时间内精确地评估WJP物体的残余应力。

8. 发明授权

US08387427B2 Water jet peening method and apparatus thereof 有权
标题翻译：喷水喷丸处理方法及装置
公开(公告)号：US08387427B2
公开(公告)日：2013-03-05
申请号：US12830169
申请日：2010-07-02
申请人： Yuji Matsui , Masahiro Tooma , Atsushi Baba , Kouichi Kurosawa , Fujio Yoshikubo
发明人： Yuji Matsui , Masahiro Tooma , Atsushi Baba , Kouichi Kurosawa , Fujio Yoshikubo
IPC分类号： B21D7/06
CPC分类号： C21D7/06 , C21D11/00
摘要： A high-pressure water jet is injected from a nozzle scanned and a shock wave generated due to the collapse of bubbles included in the water jet is impacted on a WJP execution object. Tensile residual stress close to the surface of the WJP execution object is improved to compressive residual stress. The shock wave is detected by a pressure sensor and a shock wave generation frequency is obtained. Whether the obtained shock wave generation frequency is larger than a set value or not is decided. When the shock wave generation frequency is larger than the set value, a high-pressure pump is stopped and the injection of the water jet from the nozzle is stopped. When the shock wave generation frequency is equal to or smaller than the set value, the operation condition of the high-pressure pump is changed. The pressure of the water jet injected from the nozzle is increased and the WJP is executed for a part of the WJP execution object where the shock wave generation frequency is equal to or smaller than the set value. Improvement effect of the residual stress of the WJP execution object can be confirmed more accurately.
摘要翻译：从扫描的喷嘴喷射高压水射流，并且由于包含在水射流中的气泡的崩溃而产生的冲击波被冲击到WJP执行对象上。靠近WJP执行物体表面的拉伸残余应力提高到压缩残余应力。通过压力传感器检测冲击波，获得冲击波产生频率。确定获得的冲击波产生频率是否大于设定值。当冲击波产生频率大于设定值时，停止高压泵并停止喷嘴的喷射。当冲击波产生频率等于或小于设定值时，改变高压泵的运行状态。从喷嘴喷射的喷水的压力增加，对于冲击波产生频率等于或小于设定值的WJP执行对象的一部分执行WJP。可以更准确地确认WJP执行对象的残余应力的改善效果。

9. 发明申请

US20100123474A1 INSPECTION APPARATUS AND METHOD 有权
标题翻译：检查装置和方法
公开(公告)号：US20100123474A1
公开(公告)日：2010-05-20
申请号：US12693266
申请日：2010-01-25
申请人： Takeshi Sunaoshi , Kouichi Kurosawa , Takeshi Sato , Masaaki Komori
发明人： Takeshi Sunaoshi , Kouichi Kurosawa , Takeshi Sato , Masaaki Komori
IPC分类号： G01R31/02
CPC分类号： G01R31/2874 , G01R31/311
摘要： There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.
摘要翻译：提供了可以局部地进行样品温度调节的检查装置和方法，从而可以抑制样品漂移。包括保持半导体样品118的样品台109，用于测量半导体样品118上的半导体器件的电特性的多个探针106，向探针106施加电压和/或电流的电源，检测器测量与探针接触的样品上的半导体器件的电特性，以及在半导体样品118的测量部分上照射电磁波的电磁波照射机构。

10. 发明授权

US06636579B2 Device and method for repairing inside of reactor pressure vessel 失效
公开(公告)号：US06636579B2
公开(公告)日：2003-10-21
申请号：US09951898
申请日：2001-09-14
申请人： Kouichi Kurosawa , Youichi Mahara , Toshiharu Nagashima , Kazuhiro Nitta , Shinji Go , Yoshitoshi Suzuki , Katsuhiko Hirano
发明人： Kouichi Kurosawa , Youichi Mahara , Toshiharu Nagashima , Kazuhiro Nitta , Shinji Go , Yoshitoshi Suzuki , Katsuhiko Hirano
IPC分类号： G21C1701
CPC分类号： G21C17/007 , G21Y2002/401 , G21Y2004/501
摘要： An opening portion 3 is produced by cutting a recirculating piping 72 connected to a recirculating nozzle 2 of a reactor pressure vessel 1. A repairing device is brought into an annulus 10 of the reactor pressure vessel 1 from the opening 3, thereby repairing the annulus 10.

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