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    • 3. 发明申请
    • Semiconductor Testing Method and Semiconductor Tester
    • 半导体测试方法和半导体测试仪
    • US20080237462A1
    • 2008-10-02
    • US11834207
    • 2007-08-06
    • Tohru ANDOYasuhiko NaraTsutomu SaitoShinichi KatoTakeshi Sunaoshi
    • Tohru ANDOYasuhiko NaraTsutomu SaitoShinichi KatoTakeshi Sunaoshi
    • G01N23/00G06K9/00
    • G01N23/225H01J2237/2817H01J2237/2826
    • A semiconductor testing method capable of quickly counting semiconductor cells with accuracy is achieved. Since an SEM is adjusted in a specific condition, the rotation axis of a stage and the axis of an optical system are deviated from each other in a different observation environment and a different adjustment environment. The deviation between the axes is easily adjusted in each observation environment, so that the deviation is reduced. A seemingly horizontal or vertical line is drawn with a mouse and raster rotation is performed in alignment with the closer axis. After that, the stage is horizontally moved, pattern matching is performed on an image on a position where the image should be disposed, and an angle is adjusted. The stage is moved evenly along the X-axis and the Y-axis, achieving a movement to a destination like a straight line. In synchronization with the smooth movement of the stage, a cell 201 is surrounded in a rectangular frame 205 by a ruler 301 and the number of cells is displayed with a numeric value 302. Thus by using a correct direction and a stable velocity, image correction (501 to 504) is further performed during the movement of the stage (403), so that the cells 201 can be easily counted with accuracy.
    • 实现了能够精确地快速计数半导体单元的半导体测试方法。 由于在特定条件下调整SEM,因此在不同的观察环境和不同的调节环境下,台的旋转轴和光学系统的轴线彼此偏离。 在每个观察环境中容易调整轴之间的偏差,从而减小偏差。 用鼠标绘制一个看似水平或垂直的线条,并且与更靠近的轴线对齐进行光栅旋转。 之后,水平移动台,对应该设置图像的位置上的图像执行图案匹配,并且调整角度。 舞台沿着X轴和Y轴均匀移动,实现了像直线一样的目的地移动。 与平台的平滑移动同步,单元201由标尺301在矩形框205中包围,并且以数值302显示单元的数量。 因此,通过使用正确的方向和稳定的速度,在台(403)的移动期间进一步执行图像校正(501〜504),使得可以容易地对单元201进行计数。
    • 5. 发明申请
    • Non-oxide ceramic having oxide layer on the surface thereof, method for production thereof and use thereof
    • 其表面具有氧化物层的非氧化物陶瓷,其制造方法及其用途
    • US20070161494A1
    • 2007-07-12
    • US10587327
    • 2005-01-21
    • Hiroyuki FukuyamaTakehiko YonedaMasao AriyukiTakeshi SunaoshiHideki Sato
    • Hiroyuki FukuyamaTakehiko YonedaMasao AriyukiTakeshi SunaoshiHideki Sato
    • C04B35/00B65D85/00
    • C04B41/009C04B41/5031C04B41/87H01L21/4807H01L23/15H01L2924/0002C04B41/0072C04B41/4519C04B35/581H01L2924/00
    • A non-oxide ceramics having improved performances and functions by forming a high-quality oxide film on the surface of a non-oxide ceramics such as aluminum nitride. The method for the formation of the non-oxide ceramics comprises the steps of: (1) providing a non-oxide ceramics; (2) introducing the non-oxide ceramics into a furnace and then regulating the atmosphere within the furnace so as to have an oxidizing gas content of not more than 0.5 mmol in terms of total number of moles of the oxidizing gas per m3 of the inside of the furnace; (3) heating the non-oxide ceramics to a temperature at or above a temperature, which is 300° C. below the oxidation start temperature of the non-oxide ceramics, while maintaining the low-oxidizing gas atmosphere and (4) bringing the non-oxide ceramics heated in the step (3) into contact with an oxidizing gas and then holding the non-oxide ceramics at a temperature above the oxidation start temperature of the non-oxide ceramics to form an oxide layer, and that, in the step (4), until at least two min. elapses after the arrival of the temperature at or above the oxidation start temperature after the start of the contact between the non-oxide ceramics and the oxidizing gas, the pressure or partial pressure of the oxidizing gas is maintained at not more than 50 kPa.
    • 通过在诸如氮化铝的非氧化物陶瓷的表面上形成高质量的氧化物膜而具有改进的性能和功能的非氧化物陶瓷。 形成非氧化物陶瓷的方法包括以下步骤:(1)提供非氧化物陶瓷; (2)将非氧化物陶瓷引入炉中,然后调节炉内的气氛,使得氧化气体含量以每立方米内的氧化气体的总摩尔数计不大于0.5mmol 的炉子 (3)在保持低氧化性气体气氛的同时,将非氧化物陶瓷的温度加热到低于非氧化物陶瓷的氧化开始温度300℃以下的温度,(4)使 在步骤(3)中加热的非氧化物陶瓷与氧化气体接触,然后将非氧化物陶瓷保持在高于非氧化物陶瓷的氧化开始温度的温度以形成氧化物层,并且在 步骤(4),直到至少两分钟。 在非氧化物陶瓷与氧化气体接触开始之后温度达到或高于氧化开始温度时,氧化气体的压力或分压保持在50kPa以下。