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1. 发明授权

US06427197B1 Semiconductor memory device operating in synchronization with a clock signal for high-speed data write and data read operations 有权
标题翻译：半导体存储器件与时钟信号同步工作，用于高速数据写入和数据读取操作
公开(公告)号：US06427197B1
公开(公告)日：2002-07-30
申请号：US09394891
申请日：1999-09-13
申请人： Yasuharu Sato , Tadao Aikawa , Shinya Fujioka , Waichiro Fujieda , Hitoshi Ikeda , Hiroyuki Kobayashi
发明人： Yasuharu Sato , Tadao Aikawa , Shinya Fujioka , Waichiro Fujieda , Hitoshi Ikeda , Hiroyuki Kobayashi
IPC分类号： G11C800
CPC分类号： G11C7/1072 , G11C7/1039
摘要： The present invention is a memory circuit for writing prescribed numbers of bits of write data, determined according to the burst length, in response to write command, comprising: a first stage for inputting, and then holding, row addresses and column addresses simultaneously with the write command; a second stage having a memory core connected to the first stage via a pipeline switch, wherein the row addresses and column addresses are decoded, and word line and sense amps are activated; a third stage for inputting the write data serially and sending the write data to the memory core in parallel; and a serial data detection circuit for generating write-pipeline control signal for making the pipeline switch conduct, after the prescribed number of bits of write data has been inputted. According to the present invention, in an FCRAM exhibiting a pipeline structure, the memory core in the second stage can be activated after safely fetching the write data in the burst length. When writing successively or reading successively, moreover, the command cycle can made short irrespective of the burst length.
摘要翻译：本发明是一种存储电路，用于响应于写命令，写入根据突发长度确定的指定数量的写入数据，包括：第一级，用于与第一级同时输入，然后保持行地址和列地址写命令第二级具有经由流水线开关连接到第一级的存储器核，其中行地址和列地址被解码，字线和检测放大器被激活; 用于串行输入写入数据并且将写入数据并行地发送到存储器核心的第三级; 以及串行数据检测电路，用于在输入了规定数量的写入数据之后，产生用于使流水线开关导通的写入流水线控制信号。根据本发明，在呈现流水线结构的FCRAM中，可以在以突发长度安全地取出写入数据之后激活第二级中的存储器核心。此外，当连续写入或连续读取时，无论突发长度如何，命令循环可以变短。

2. 发明授权

US6125065A Semiconductor memory with column gates and method of controlling column gates during a write mask operation 有权
标题翻译：具有列门的半导体存储器和在写掩码操作期间控制列门的方法
公开(公告)号：US6125065A
公开(公告)日：2000-09-26
申请号：US274251
申请日：1999-03-23
申请人： Tadao Aikawa , Yasuharu Sato , Hiroyuki Kobayashi , Hitoshi Ikeda
发明人： Tadao Aikawa , Yasuharu Sato , Hiroyuki Kobayashi , Hitoshi Ikeda
IPC分类号： G11C11/403 , G11C7/10 , G11C7/22 , G11C7/00
CPC分类号： G11C7/22 , G11C7/1006
摘要： A semiconductor memory has pairs of bit lines connected to its memory cells. Sense amps are connected across the bit line pairs. Column gate pairs are connected to the bit line pairs, and data bus pairs are connected to the bit line pairs via the column gate pairs. A column gate drive control circuit is connected to the column gate pairs and turns selected column gate pairs off during a write mask operation.
摘要翻译：半导体存储器具有连接到其存储单元的位线对。感测放大器连接在位线对之间。列门对连接到位线对，数据总线对通过列门对连接到位线对。列栅极驱动控制电路连接到列栅极对，并在写入掩模操作期间将所选择的列栅极对关断。

3. 发明授权

US06377513B2 Method for writing data to semiconductor memory and semiconductor memory 有权
标题翻译：将数据写入半导体存储器和半导体存储器的方法
公开(公告)号：US06377513B2
公开(公告)日：2002-04-23
申请号：US09763627
申请日：2001-03-06
申请人： Masahiro Niimi , Yasuharu Sato , Tadao Aikawa , Hitoshi Ikeda , Hiroyuki Kobayashi
发明人： Masahiro Niimi , Yasuharu Sato , Tadao Aikawa , Hitoshi Ikeda , Hiroyuki Kobayashi
IPC分类号： G11C800
CPC分类号： G11C7/22 , G11C7/18 , G11C7/20 , G11C11/4076 , G11C11/4087 , G11C2207/229
摘要： A semiconductor memory device that performs a flash write operation without increasing the circuit area. Column selection lines CL0-CL7 extend parallel to word lines at locations corresponding to where column gates are formed. During a flash write mode, the subcolumn decoder 14 simultaneously selects the column selection lines. This writes cell information to every memory cell connected to the selected word line.
摘要翻译：一种在不增加电路面积的情况下执行闪存写入操作的半导体存储器件。列选择线CL0-CL7在对应于形成列门的位置处平行于字线延伸。在闪存写入模式期间，子列解码器14同时选择列选择线。这将单元信息写入连接到所选字线的每个存储单元。

4. 发明授权

US06333890B1 Memory device with a plurality of common data buses 有权
标题翻译：具有多个公共数据总线的存储器件
公开(公告)号：US06333890B1
公开(公告)日：2001-12-25
申请号：US09695302
申请日：2000-10-25
申请人： Masahiro Niimi , Shinya Fujioka , Tadao Aikawa , Yasuharu Sato
发明人： Masahiro Niimi , Shinya Fujioka , Tadao Aikawa , Yasuharu Sato
IPC分类号： G11C800
CPC分类号： G11C7/106 , G11C7/1006 , G11C7/1051 , G11C7/1069 , G11C7/18 , G11C8/12 , G11C2207/108
摘要： According to an aspect of the present invention, a memory device having a plurality of banks carries out bank interleaving by use of a plurality of common data buses, the number of which is less than the number of the banks. The present invention enables the data to be read more rapidly while suppressing the increase of the chip area. According to the present invention, there is provided a memory device having a plurality of banks each including a plurality of memory cells, and reading or writing data from or into the memory cells in synchronism with a clock signal, the memory device comprising: a sense amplifier disposed on each of the plurality of banks, for amplifying data read from the memory cells; a plurality of common data buses shared by the plurality of banks, the number of the common data buses being less than the number of the banks; and a switching circuit disposed on each of the plurality of banks, for feeding or receiving data of the each bank to or from the plurality of common data buses; wherein read or write of data of the plurality of banks is made through successive selection of the plurality of common data buses by the switching circuit.
摘要翻译：根据本发明的一个方面，具有多个存储体的存储器件通过使用多个公共数据总线执行存储体交织，该数据总线的数量少于存储体的数量。本发明能够在抑制芯片面积的增加的同时更快地读取数据。根据本发明，提供了一种具有多个存储单元的存储器件，每个存储单元包括多个存储器单元，以及与时钟信号同步地从存储器单元读取或写入数据，所述存储器件包括：感测放大器设置在所述多个存储体中的每一个上，用于放大从所述存储器单元读取的数据; 由所述多个银行共享的多个公用数据总线，所述公共数据总线的数量小于所述存储体的数量; 以及切换电路，其设置在所述多个存储体中的每一个上，用于向所述多个公共数据总线馈送或接收每个存储体的数据; 其中通过所述切换电路连续选择所述多个公用数据总线来进行所述多个存储体的数据的读取或写入。

5. 发明授权

US06185149B2 Semiconductor integrated circuit memory 有权
标题翻译：半导体集成电路存储器
公开(公告)号：US06185149B2
公开(公告)日：2001-02-06
申请号：US09340147
申请日：1999-06-28
申请人： Shinya Fujioka , Masao Taguchi , Yasuharu Sato , Takaaki Suzuki , Tadao Aikawa , Yasurou Matsuzaki , Toshiya Uchida
发明人： Shinya Fujioka , Masao Taguchi , Yasuharu Sato , Takaaki Suzuki , Tadao Aikawa , Yasurou Matsuzaki , Toshiya Uchida
IPC分类号： G11C800
CPC分类号： G11C7/1018 , G11C7/1072
摘要： A semiconductor memory includes memory cell blocks, a burst-length information generating circuit which generates burst-length information based on a burst length, and a block enable circuit which receives the burst-length information. The block enable circuit selectively enables one of the memory cell blocks when the burst length is equal to or shorter than a predetermined burst length and selectively enables a plurality of memory cell blocks based on the burst length when the burst length is longer than the predetermined burst length. Data are read from the above-mentioned one or plurality of memory cell blocks.
摘要翻译：半导体存储器包括存储单元块，基于突发长度生成突发长度信息的突发长度信息产生电路，以及接收脉冲串长度信息的块使能电路。当突发长度等于或小于预定突发长度时，块使能电路选择性地启用存储单元块中的一个，并且当突发长度长于预定突发时，基于脉冲串长度选择性地启用多个存储单元块长度。从上述一个或多个存储单元块读取数据。

6. 发明授权

US06459641B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US06459641B2
公开(公告)日：2002-10-01
申请号：US09834945
申请日：2001-04-16
申请人： Shinya Fujioka , Masao Taguchi , Waichirou Fujieda , Yasuharu Sato , Takaaki Suzuki , Tadao Aikawa , Takayuki Nagasawa
发明人： Shinya Fujioka , Masao Taguchi , Waichirou Fujieda , Yasuharu Sato , Takaaki Suzuki , Tadao Aikawa , Takayuki Nagasawa
IPC分类号： G11C700
CPC分类号： G11C7/06 , G11C7/1039 , G11C7/1072 , G11C7/12 , G11C8/00 , G11C8/08 , G11C8/10 , G11C11/4085 , G11C11/4091 , G11C11/4094 , G11C2207/005 , G11C2207/065
摘要： The present invention is aimed at providing a semiconductor memory device which performs a row-address pipe-line operation in accessing different row addresses so as to achieve high-speed access. The semiconductor memory device according to the present invention includes a plurality of sense-amplifiers which store data when the data is received via bit lines from memory cells corresponding to a selected word line, a column decoder which reads parallel data of a plurality of bits from selected sense amplifiers by simultaneously selecting a plurality of column gates in response to a column address, a data-conversion unit which converts the parallel data into serial data, and a precharge-signal-generation unit which generates an internal precharge signal a first delay-time period after generation of a row-access signal for selecting the selected word line so as to reset the bit lines and said plurality of sense-amplifiers.
摘要翻译：本发明的目的在于提供一种在访问不同行地址时执行行地址管线操作以实现高速访问的半导体存储器件。根据本发明的半导体存储器件包括多个读出放大器，当经由位线从存储器单元接收数据时存储数据，该存储器单元对应于所选择的字线，列解码器从多个位读取多个位的并行数据选择的读出放大器，通过响应于列地址同时选择多个列门，将并行数据转换为串行数据的数据转换单元，以及产生内部预充电信号的预充电信号产生单元，生成用于选择所选字线的行访问信号以便复位位线和所述多个感测放大器之后的时间段。

7. 发明授权

US06246620B1 Semiconductor memory device 有权
公开(公告)号：US06246620B1
公开(公告)日：2001-06-12
申请号：US09533759
申请日：2000-03-23
申请人： Shinya Fujioka , Masao Taguchi , Waichirou Fujieda , Yasuharu Sato , Takaaki Suzuki , Tadao Aikawa , Takayuki Nagasawa
发明人： Shinya Fujioka , Masao Taguchi , Waichirou Fujieda , Yasuharu Sato , Takaaki Suzuki , Tadao Aikawa , Takayuki Nagasawa
IPC分类号： G11C700
CPC分类号： G11C7/06 , G11C7/1039 , G11C7/1072 , G11C7/12 , G11C8/00 , G11C8/08 , G11C8/10 , G11C11/4085 , G11C11/4091 , G11C11/4094 , G11C2207/005 , G11C2207/065
摘要： The present invention is aimed at providing a semiconductor memory device which performs a row-address pipe-line operation in accessing different row addresses so as to achieve high-speed access. The semiconductor memory device according to the present invention includes a plurality of sense-amplifiers which store data when the data is received via bit lines from memory cells corresponding to a selected word line, a column decoder which reads parallel data of a plurality of bits from selected sense amplifiers by simultaneously selecting a plurality of column gates in response to a column address, a data-conversion unit which converts the parallel data into serial data, and a precharge-signal-generation unit which generates an internal precharge signal a first delay-time period after generation of a row-access signal for selecting the selected word line so as to reset the bit lines and said plurality of sense-amplifiers.

8. 发明授权

US6088291A Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US6088291A
公开(公告)日：2000-07-11
申请号：US147600
申请日：1999-01-29
申请人： Shinya Fujioka , Masao Taguchi , Waichirou Fujieda , Yasuharu Sato , Takaaki Suzuki , Tadao Aikawa , Takayuki Nagasawa
发明人： Shinya Fujioka , Masao Taguchi , Waichirou Fujieda , Yasuharu Sato , Takaaki Suzuki , Tadao Aikawa , Takayuki Nagasawa
IPC分类号： G11C7/06 , G11C7/10 , G11C7/12 , G11C8/00 , G11C8/08 , G11C8/10 , G11C11/408 , G11C11/4091 , G11C11/4094 , G11C7/00
CPC分类号： G11C7/06 , G11C11/4085 , G11C11/4091 , G11C11/4094 , G11C7/1039 , G11C7/1072 , G11C7/12 , G11C8/00 , G11C8/08 , G11C8/10 , G11C2207/005 , G11C2207/065
摘要： The present invention is aimed at providing a semiconductor memory device which performs a row-address pipe-line operation in accessing different row addresses so as to achieve high-speed access. The semiconductor memory device according to the present invention includes a plurality of sense-amplifiers which store data when the data is received via bit lines from memory cells corresponding to a selected word line, a column decoder which reads parallel data of a plurality of bits from selected sense amplifiers by simultaneously selecting a plurality of column gates in response to a column address, a data-conversion unit which converts the parallel data into serial data, and a precharge-signal-generation unit which generates an internal precharge signal a first delay-time period after generation of a row-access signal for selecting the selected word line so as to reset the bit lines and said plurality of sense-amplifiers.
摘要翻译： PCT No.PCT / JP98 / 02443 Sec。 371日期1999年1月29日第 102（e）日期1999年1月29日PCT提交1998年6月3日PCT公布。第WO98 / 56004号公报日期：1998年12月10日本发明旨在提供一种在访问不同行地址时执行行地址管线操作以实现高速访问的半导体存储器件。根据本发明的半导体存储器件包括多个读出放大器，当经由位线从存储器单元接收数据时存储数据，该存储器单元对应于所选择的字线，列解码器从多个位读取多个位的并行数据选择的读出放大器，通过响应于列地址同时选择多个列门，将并行数据转换为串行数据的数据转换单元，以及产生内部预充电信号的预充电信号产生单元，生成用于选择所选字线的行访问信号以便复位位线和所述多个感测放大器之后的时间段。

9. 发明授权

US06400617B1 Semiconductor memory circuit having selective redundant memory cells 有权
公开(公告)号：US06400617B1
公开(公告)日：2002-06-04
申请号：US09385012
申请日：1999-08-27
申请人： Tadao Aikawa , Takaaki Suzuki , Yasuharu Sato , Hiroyuki Kobayashi
发明人： Tadao Aikawa , Takaaki Suzuki , Yasuharu Sato , Hiroyuki Kobayashi
IPC分类号： G11C2900
CPC分类号： G11C29/808
摘要： A semiconductor memory circuit includes a plurality of memory cell arrays arranged in rows and columns. A decoder circuit selects a predetermined number of memory cell arrays from among the plurality of the memory cell arrays. Sense amplifiers sense data read from selected memory cell arrays. The plurality of memory cell arrays are grouped into a first type of memory cell arrays each having a redundant memory cell and a second type of memory cell arrays each having no redundant memory cell.

10. 发明授权

US06188640B1 Data output circuits for semiconductor memory devices 有权
标题翻译：半导体存储器件的数据输出电路
公开(公告)号：US06188640B1
公开(公告)日：2001-02-13
申请号：US09398828
申请日：1999-09-17
申请人： Tadao Aikawa , Yasuharu Sato , Hiroyuki Kobayashi , Waichirou Fujieda
发明人： Tadao Aikawa , Yasuharu Sato , Hiroyuki Kobayashi , Waichirou Fujieda
IPC分类号： G11C800
CPC分类号： G11C7/106 , G11C7/1051 , G11C7/1069 , G11C7/1072 , G11C7/22 , G11C11/4093
摘要： A data output circuit for a semiconductor memory device, such as a synchronous DRAM (SDRAM) includes an output control circuit that acquires a command in sync with an input internal clock signal and generates an output control signal used to determine the output timing of a data signal. An output buffer receives the output control signal and then outputs the data signal in accordance with an output internal clock signal. The phase of the output internal clock signal is advanced from that of the input internal clock signal. The output control circuit also includes a latency counter that generates the output control signal by counting the cycles of a second output internal clock signal, which is delayed from the first output internal clock signal.
摘要翻译：用于诸如同步DRAM（SDRAM）的半导体存储器件的数据输出电路包括输出控制电路，其获取与输入的内部时钟信号同步的命令，并且生成用于确定数据的输出定时的输出控制信号信号。输出缓冲器接收输出控制信号，然后根据输出内部时钟信号输出数据信号。输出内部时钟信号的相位从输入内部时钟信号的相位提前。输出控制电路还包括延迟计数器，其通过对从第一输出内部时钟信号延迟的第二输出内部时钟信号的周期进行计数来产生输出控制信号。

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