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    • 3. 发明授权
    • Etching agent, etching method and liquid for preparing etching agent
    • 蚀刻剂,蚀刻方法和制备蚀刻剂的液体
    • US08513139B2
    • 2013-08-20
    • US12808903
    • 2008-12-19
    • Osamu MatsudaNobuyuki KikuchiIchiro HayashidaSatoshi Shirahata
    • Osamu MatsudaNobuyuki KikuchiIchiro HayashidaSatoshi Shirahata
    • H01L21/302H01L21/461
    • H01L21/30604C23F1/38C23F1/44H01L21/32134
    • The present invention is directed to provide an etching agent for a semiconductor substrate, which is capable of etching a titanium (Ti)-based metal film or a tungsten (W)-based metal film on a semiconductor substrate and an etching method using relevant etching agent, and relates to a liquid for preparing the etching agent for a semiconductor substrate composed of a solution comprising (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) 0.01 to 3% by weight of two or more kinds of anion species other than phosphonic acid chelating agents having a hydroxyl group, in which anion species have no oxidizing power, an etching method characterized by etching a titanium (Ti)-based metal film or a tungsten (W)-based metal film on a semiconductor substrate using relevant etching agent for a semiconductor substrate, further, a solution comprising (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) anion species other than phosphonic acid chelating agents having a hydroxyl group, in which anion species have no oxidizing power.
    • 本发明旨在提供一种能够在半导体衬底上蚀刻基于钛(Ti)的金属膜或基于钨(W)的金属膜的半导体衬底的蚀刻剂和使用相关蚀刻的蚀刻方法 并且涉及一种用于制备半导体衬底蚀刻剂的液体,该半导体衬底由包含(A)过氧化氢,(B)具有羟基的膦酸螯合剂,(C)碱性化合物和(D) -1)铜防腐剂和/或(D-2)0.01〜3重量%的除了具有羟基的膦酸螯合剂以外的两种或更多种阴离子物质,其中阴离子种类不具有氧化能力,蚀刻 其特征在于,使用相关的半导体衬底蚀刻剂在半导体衬底上蚀刻基于钛(Ti)的金属膜或基于钨(W))的金属膜,此外,还包括(B)膦酸螯合剂的溶液,所述膦酸螯合剂具有 一个 羟基,(C)碱性化合物和(D-1)除了具有羟基的膦酸螯合剂以外的铜防腐和/或(D-2)阴离子物质,其中阴离子种类不具有氧化能力。
    • 6. 发明授权
    • High voltage incandescent lamp with low-pressure Kr/N.sub.2 gas fill
    • 高压白炽灯采用低压Kr / N2气体填充
    • US5537008A
    • 1996-07-16
    • US266598
    • 1994-06-28
    • Osamu MatsudaTakahiro Yaguchi
    • Osamu MatsudaTakahiro Yaguchi
    • H01K1/32H01K1/50H05B37/00
    • H01K1/50
    • An incandescent lamp which is operable at about 200-275 V is obtainable by enclosing a filling composition consisting of about 80-95% by volume of krypton gas and about 5-20% by volume of nitrogen gas in a glass envelope bearing a tungsten filament and an inner volume of about 0.2-1.2 ml/operating wattage in an amount of about 0.7-0.9 ml/ml of the inner volume. The incandescent lamp exhibits satisfactory luminous characteristics and an extended life expectancy without causing arc discharge even when operated at a voltage of about 200-275 V. Thus a lighting device which comprises such an incandescent lamp as the luminous source and a power source capable of energizing it at a voltage of about 200-275 V is very useful in general and special illumination.
    • 可在约200-275V下操作的白炽灯可以通过将包含约80-95体积%的氪气和约5-20体积%氮气的填充组合物包含在具有钨丝的玻璃封套中来获得 内容积为约0.2-1.2ml /操作功率,其量为内容积的约0.7-0.9ml / ml。 白炽灯即使在约200-275V的电压下操作,也能够发出令人满意的发光特性和延长的使用寿命,而不产生电弧放电。因此,一种照明装置,其包括作为发光源的白炽灯和能够发光的电源 它在约200-275V的电压下是非常有用的一般和特殊的照明。