专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5409802A Method and apparatus for fine processing 失效
标题翻译：精细加工的方法和装置
公开(公告)号：US5409802A
公开(公告)日：1995-04-25
申请号：US164822
申请日：1993-12-09
申请人： Yasue Sato , Toshiyuki Komatsu , Shinichi Kawate
发明人： Yasue Sato , Toshiyuki Komatsu , Shinichi Kawate
IPC分类号： H01L21/28 , G03F7/004 , G03F7/16 , H01L21/027 , H01L21/033 , H01L21/302 , H01L21/3065 , H01L21/308 , G03C5/00
CPC分类号： G03F7/0041 , G03F7/167 , H01L21/0337 , H01L21/3086 , Y10S430/146
摘要： A method for fine processing includes a first step in which a first reaction gas is introduced into a reaction chamber which contains a material to be processed, followed by irradiation with light to form an active layer on the surface of the material through photochemical reaction between the material and the first reaction gas, a second step in which the active layer is selectively irradiated with energy in an atmosphere of a second reaction gas to cause a chemical change only in the irradiated portion to form a latent image layer, a third step in which either the latent image layer or active layer is removed and a fourth step in which, using the portion left unremoved in the third step as a shield mask, the portion other than the masked portion is etched.
摘要翻译：精细加工方法包括第一步骤，其中将第一反应气体引入到含有待处理材料的反应室中，随后通过光的光化反应在该材料的表面上形成活性层，材料和第一反应气体，第二步骤，其中活性层在第二反应气体的气氛中被选择性地照射能量，仅在照射部分中引起化学变化以形成潜像层，第三步骤去除潜像层或活性层，第四步骤，其中使用在第三步骤中未被除去的部分作为屏蔽掩模，蚀刻除了掩模部分以外的部分。

2. 发明授权

US5573891A Method and apparatus for fine processing 失效
标题翻译：精细加工的方法和装置
公开(公告)号：US5573891A
公开(公告)日：1996-11-12
申请号：US393562
申请日：1995-02-23
申请人： Yasue Sato , Toshiyuki Komatsu , Shinichi Kawate
发明人： Yasue Sato , Toshiyuki Komatsu , Shinichi Kawate
IPC分类号： H01L21/28 , G03F7/004 , G03F7/16 , H01L21/027 , H01L21/033 , H01L21/302 , H01L21/3065 , H01L21/308 , G03C5/00
CPC分类号： G03F7/0041 , G03F7/167 , H01L21/0337 , H01L21/3086 , Y10S430/146
摘要： An apparatus for fine processing includes a support for supporting a material to be processed, an active layer forming device for forming an active layer on the surface of the material by irradiating the material with light in a reaction gas, a latent image forming device for selectively irradiating the active layer with energy in the reaction gas to form a latent image, a shield mask forming device for removing either the latent image layer or the active layer to form a shield mask and an etching device for etching the portion other than the mask portion using the portion left unetched as the shield mask.
摘要翻译：一种微细加工装置，其特征在于，包括支撑被处理材料的支撑体，通过在反应气体中照射光而在材料的表面形成有源层的有源层形成装置，选择性地形成潜像在反应气体中照射活性层以形成潜像，用于去除潜像层或活性层以形成屏蔽掩模的屏蔽掩模形成装置和用于蚀刻除了掩模部分之外的部分的蚀刻装置使用未蚀刻的部分作为屏蔽掩模。

3. 发明授权

US5413664A Apparatus for preparing a semiconductor device, photo treatment apparatus, pattern forming apparatus and fabrication apparatus 失效
标题翻译：用于制备半导体器件的设备，光处理设备，图案形成设备和制造设备
公开(公告)号：US5413664A
公开(公告)日：1995-05-09
申请号：US275757
申请日：1994-07-20
申请人： Takayuki Yagi , Toshiyuki Komatsu , Yasue Sato , Shinichi Kawate
发明人： Takayuki Yagi , Toshiyuki Komatsu , Yasue Sato , Shinichi Kawate
IPC分类号： G03F1/68 , G03F7/16 , G03F7/20 , H01L21/308 , H01L21/311 , H01L21/3213 , H01L21/3065 , B44C1/22 , C23F1/02
CPC分类号： G03F1/68 , G03F7/16 , G03F7/167 , G03F7/2043 , H01L21/3081 , H01L21/31144 , H01L21/32139 , Y10S438/908 , Y10T29/41
摘要： A process for forming an etching pattern, which includes selectively irradiating a light to a clean surface of a material to be worked by etching so as to form radicals from a photoradical forming substance in an atmosphere of the substance, forming a modified portion having an etching resistance at a photo-irradiated portion of the surface, and then subjecting an unmodified portion of the surface of the material to be worked to an etching treatment, thereby forming an etching pattern corresponding to a pattern formed by the irradiation.
摘要翻译：一种用于形成蚀刻图案的工艺，其包括通过蚀刻选择性地将光照射到待加工材料的清洁表面，以在物质的气氛中从光自由基形成物质形成自由基，形成具有蚀刻的改性部分在表面的光照射部分的电阻，然后对被处理材料的未修饰部分进行蚀刻处理，从而形成与通过照射形成的图案相对应的蚀刻图案。

4. 发明授权

US5344522A Pattern forming process and process for preparing semiconductor device utilizing said pattern forming process 失效
标题翻译：图案形成工艺和利用所述图案形成工艺制备半导体器件的工艺
公开(公告)号：US5344522A
公开(公告)日：1994-09-06
申请号：US13180
申请日：1993-01-29
申请人： Takayuki Yagi , Toshiyuki Komatsu , Yasue Sato , Shinichi Kawate
发明人： Takayuki Yagi , Toshiyuki Komatsu , Yasue Sato , Shinichi Kawate
IPC分类号： G03F1/68 , G03F7/16 , G03F7/20 , H01L21/308 , H01L21/311 , H01L21/3213 , H01L21/306 , B44C1/22 , C23F1/00
CPC分类号： G03F1/68 , G03F7/16 , G03F7/167 , G03F7/2043 , H01L21/3081 , H01L21/31144 , H01L21/32139 , Y10S438/908 , Y10T29/41
摘要： A process for forming an etching pattern, which includes selectively irradiating a light to a clean surface of a material to be worked by etching so as to form radicals from a photoradical forming substance in an atmosphere of the substance, forming a modified portion having an etching resistance at a photo-irradiated portion of the surface, and then subjecting an unmodified portion of the surface of the material to be worked to an etching treatment, thereby forming an etching pattern corresponding to a pattern formed by the irradiation.
摘要翻译：一种用于形成蚀刻图案的工艺，其包括通过蚀刻选择性地将光照射到待加工材料的清洁表面，以在物质的气氛中从光自由基形成物质形成自由基，形成具有蚀刻的改性部分在表面的光照射部分的电阻，然后对被处理材料的未修饰部分进行蚀刻处理，从而形成与通过照射形成的图案相对应的蚀刻图案。

5. 发明授权

US5490896A Photomask or a light shielding member having a light transmitting portion and a light shielding portion 失效
标题翻译：光掩模或具有透光部和遮光部的遮光部件
公开(公告)号：US5490896A
公开(公告)日：1996-02-13
申请号：US395472
申请日：1995-02-28
申请人： Takayuki Yagi , Toshiyuki Komatsu , Yasue Sato , Shinichi Kawate
发明人： Takayuki Yagi , Toshiyuki Komatsu , Yasue Sato , Shinichi Kawate
IPC分类号： G03F1/68 , G03F7/16 , G03F7/20 , H01L21/308 , H01L21/311 , H01L21/3213 , H01L21/306 , B44C1/22
CPC分类号： G03F1/68 , G03F7/16 , G03F7/167 , G03F7/2043 , H01L21/3081 , H01L21/31144 , H01L21/32139 , Y10S438/908 , Y10T29/41
摘要： A photomask or a light-shielding member has a support capable of transmitting light, a light-shielding pattern which shields the light and a light absorbing member provided corresponding to the light-shielding pattern. In one aspect, the light-shielding pattern and the light absorbing member are provided on the same side of the support. In another aspect, the light-shielding pattern and the light absorbing member are provided with the support sandwiched therebetween.
摘要翻译：光掩模或遮光构件具有能够透光的支撑体，屏蔽光的遮光图案和对应于遮光图案设置的光吸收构件。一方面，遮光图案和光吸收构件设置在支撑体的同一侧。在另一方面，遮光图案和光吸收构件设置有夹在其间的支撑。

6. 发明授权

US06867537B2 Image-forming apparatus having vent tube and getter 失效
标题翻译：具有排气管和吸气剂的成像装置
公开(公告)号：US06867537B2
公开(公告)日：2005-03-15
申请号：US09361963
申请日：1999-07-28
申请人： Yasue Sato , Shinichi Kawate , Kazuyuki Ueda
发明人： Yasue Sato , Shinichi Kawate , Kazuyuki Ueda
IPC分类号： H01J9/18 , H01J9/24 , H01J9/385 , H01J29/02 , H01J29/08 , H01J29/86 , H01J29/87 , H01J31/08 , H01J31/12 , G01J1/62 , G01J1/304
CPC分类号： H01J9/242 , H01J9/385 , H01J29/028 , H01J29/864 , H01J31/127 , H01J2329/8625
摘要： An image-forming apparatus has a rear plate including electron-emitting devices formed thereon, a face plate including a fluorescent film formed thereon and being disposed to face the rear plate, flat plate spacers disposed between the rear plate and the face plate, and an outer frame surrounding peripheral edges of the rear plate and the face plate. Electrons emitted from the electron-emitting devices are irradiated to the fluorescent film to thereby display an image under condition where an inner space of a container constructed by the rear plate, the face plate and the outer frame is evacuated through a vent tube into a depressurized state. The vent tube is attached to a side of the outer frame that is positioned across an imaginary extension of the flat-plate spacer in the longitudinal direction thereof, or to the face plate or the rear plate in the vicinity of that side of the outer frame. With such arrangements, evacuation conductance is increased to reduce an evacuation time, and a higher vacuum level is achieved in the container so that an image can be stably displayed for a long time.
摘要翻译：图像形成装置具有包括形成在其上的电子发射器件的后板，包括形成在其上并设置成面向后板的荧光膜的面板，设置在后板和面板之间的平板间隔件，外框围绕后板和面板的周边边缘。从电子发射器件发射的电子被照射到荧光膜上，从而在由后板，面板和外框架构成的容器的内部空间通过排气管排出到减压的状态下显示图像州。排气管附接到外框架的横向于平板隔离件的纵向方向的假想延伸部分的侧面，或者连接到外框架的该侧附近的面板或后板。通过这样的布置，提高排气电导以减少排气时间，并且在容器中实现更高的真空度，使得图像可以长时间稳定地显示。

7. 发明授权

US5952775A Image-forming apparatus having vent tubes 失效
标题翻译：具有放气管的图像形成装置
公开(公告)号：US5952775A
公开(公告)日：1999-09-14
申请号：US479372
申请日：1995-06-07
申请人： Yasue Sato , Shinichi Kawate , Kazuyuki Ueda
发明人： Yasue Sato , Shinichi Kawate , Kazuyuki Ueda
IPC分类号： H01J9/18 , H01J9/24 , H01J9/385 , H01J29/02 , H01J29/08 , H01J29/86 , H01J29/87 , H01J31/08 , H01J31/12 , H01J28/70
CPC分类号： H01J9/242 , H01J29/028 , H01J29/864 , H01J31/127 , H01J9/385 , H01J2329/8625
摘要： An image-forming apparatus has a rear plate including electron-emitting devices formed thereon, a face plate including a fluorescent film formed thereon and being disposed to face the rear plate, flat plate spacers disposed between the rear plate and the face plate, and an outer frame surrounding peripheral edges of the rear plate and the face plate. Electrons emitted from the electron-emitting devices are irradiated to the fluorescent film to thereby display an image under condition where an inner space of a container constructed by the rear plate, the face plate and the outer frame is evacuated through a vent tube into a depressurized state. The vent tube is attached to a side of the outer frame that is positioned across an imaginary extension of the flat-plate spacer in the longitudinal direction thereof, or to the face plate or the rear plate in the vicinity of that side of the outer frame. With such arrangements, evacuation conductance is increased to reduce an evacuation time, and a higher vacuum level is achieved in the container so that an image can be stably displayed for a long time.
摘要翻译：图像形成装置具有包括形成在其上的电子发射器件的后板，包括形成在其上并设置成面向后板的荧光膜的面板，设置在后板和面板之间的平板间隔件，外框围绕后板和面板的周边边缘。从电子发射器件发射的电子被照射到荧光膜上，从而在由后板，面板和外框架构成的容器的内部空间通过排气管排出到减压的状态下显示图像州。排气管附接到外框架的横向于平板隔离件的纵向方向的假想延伸部分的侧面，或者连接到外框架的该侧附近的面板或后板。通过这样的布置，提高排气电导以减少排气时间，并且在容器中实现更高的真空度，使得图像可以长时间稳定地显示。

8. 发明授权

US5869919A Air cooling for flat panel displays 失效
标题翻译：平板显示器的空气冷却
公开(公告)号：US5869919A
公开(公告)日：1999-02-09
申请号：US820352
申请日：1997-03-12
申请人： Yasue Sato , Shinichi Kawate , Hisanobu Azuma
发明人： Yasue Sato , Shinichi Kawate , Hisanobu Azuma
IPC分类号： H01J31/12 , G09F9/00 , H01J7/24 , H01J29/00
CPC分类号： H01J29/006 , H05K7/20972 , H01J2201/3165 , H01J2329/00
摘要： An image display apparatus includes a display panel formed by arranging in juxtaposition a face plate carrying thereon a phosphor and a rear plate carrying thereon electron-emitting devices within a housing. The phosphor is so arranged as to be irradiated with electrons emitted from the electron-emitting devices to display images. The image display apparatus further includes an air blower for causing air to flow between the display panel and the housing.
摘要翻译：一种图像显示装置包括：显示面板，其通过并列布置带有荧光体的面板和在其上承载电子发射器件的后板。荧光体被布置为被从电子发射器件发射的电子照射以显示图像。图像显示装置还包括用于使空气在显示面板和壳体之间流动的鼓风机。

9. 发明授权

US6025115A Processing method for etching a substrate 失效
标题翻译：蚀刻基板的加工方法
公开(公告)号：US6025115A
公开(公告)日：2000-02-15
申请号：US429288
申请日：1995-04-25
申请人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
发明人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
IPC分类号： C23C16/04 , G03F1/00 , G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/02 , H01L21/033 , H01L21/285 , H01L21/308 , H01L21/311 , H01L21/316 , H01L21/32 , H01L21/321 , H01L21/3213
CPC分类号： H01L21/02071 , C23C16/047 , G03F1/68 , G03F7/2002 , G03F7/201 , G03F7/2022 , G03F7/2043 , G03F7/2053 , G03F7/265 , G03F7/36 , G03F7/38 , G03F7/7005 , G03F7/70841 , G03F7/70866 , G03F7/70875 , G03F7/70991 , H01L21/033 , H01L21/0332 , H01L21/0337 , H01L21/28556 , H01L21/28562 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/31662 , H01L21/31683 , H01L21/32 , H01L21/321 , H01L21/32139 , G03F7/00 , G03F7/0035 , G03F7/0042
摘要： A processing method for etching a substrate is described. This method includes subjecting a surface of a substrate to be processed to selective irradiation with a light in a gas atmosphere to form a surface-modified layer. The substrate surface with the surface-modified layer is then annealed to stabilize and make the surface-modified layer more etch resistant. Both the stabilized surface-modified layer and a non-modified portion of the substrate are then subjected to dry etching, thereby utilizing the higher resistance to dry etching of the stabilized surface-modified layer compared to the non-modified portion to selectively etch the non-modified portion to a desired depth.
摘要翻译：对基板的蚀刻处理方法进行说明。该方法包括使待处理的基板的表面经受气体气氛中的光的选择性照射，以形成表面改性层。然后将具有表面改性层的衬底表面退火以稳定并使表面改性层更耐蚀刻。然后将稳定化的表面改性层和基底的未改性部分进行干蚀刻，从而与未改性部分相比，利用较稳定的表面改性层的干蚀刻的较高电阻以选择性地蚀刻非 - 改变的部分到期望的深度。

10. 发明授权

US5863706A Processing method for patterning a film 失效
标题翻译：图案化薄膜的加工方法
公开(公告)号：US5863706A
公开(公告)日：1999-01-26
申请号：US429287
申请日：1995-04-25
申请人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
发明人： Toshiyuki Komatsu , Yasue Sato , Shin-Ichi Kawate
IPC分类号： C23C16/04 , G03F1/00 , G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/02 , H01L21/033 , H01L21/285 , H01L21/308 , H01L21/311 , H01L21/316 , H01L21/32 , H01L21/321 , H01L21/3213
CPC分类号： H01L21/02071 , C23C16/047 , G03F1/68 , G03F7/2002 , G03F7/201 , G03F7/2022 , G03F7/2043 , G03F7/2053 , G03F7/265 , G03F7/36 , G03F7/38 , G03F7/7005 , G03F7/70841 , G03F7/70866 , G03F7/70875 , G03F7/70991 , H01L21/033 , H01L21/0332 , H01L21/0337 , H01L21/28556 , H01L21/28562 , H01L21/3086 , H01L21/31116 , H01L21/31144 , H01L21/31662 , H01L21/31683 , H01L21/32 , H01L21/321 , H01L21/32139 , G03F7/00 , G03F7/0035 , G03F7/0042
摘要： A processing method is described which has a first step of depositing on a substrate a specimen film which may be any one of a semiconductor, a metal and a insulator.In a second step, the surface of the specimen film deposited in the first step, is irradiated with an ion beam to produce a physical damage on the surface, next, in a third step, the damaged specimen film surface is selectively irradiated with the light to partially cause a photochemical reaction so that a mask pattern, which depends on the desired device structure, is formed on the film surface. Finally, in a fourth step, photoetching is performed using the mask pattern formed in the third step as a shielding member.
摘要翻译：描述了一种处理方法，其具有在基板上沉积可以是半导体，金属和绝缘体中的任何一个的试样膜的第一步骤。在第二步骤中，在第一步骤中沉积的样品膜的表面用离子束照射以在表面上产生物理损伤，接下来，在第三步骤中，损伤的样品膜表面被选择性地照射光以部分地引起光化学反应，使得在膜表面上形成取决于期望的器件结构的掩模图案。最后，在第四步骤中，使用在第三步骤中形成的掩模图案作为屏蔽部件进行光刻。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式