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    • 9. 发明授权
    • Chip with integrated circuit and micro-silicon condenser microphone integrated on single substrate and method for making the same
    • 芯片集成电路和微硅电容麦克风集成在单个基板上,并制作相同的方法
    • US09221675B2
    • 2015-12-29
    • US13561194
    • 2012-07-30
    • Wei HuGang LiJia-Xin Mei
    • Wei HuGang LiJia-Xin Mei
    • B81C1/00H04R31/00H04R19/00
    • B81C1/00158B81C1/00246H04R19/005H04R31/00
    • A method for integrating an IC and a MEMS component includes the following steps: S1) providing a SOI base (20) having a first area (21) and a second area (22); S2) fabricating an IC on the first area through a standard semiconductor process, and simultaneously forming a metal conductive layer (26) and a medium insulation layer (25c) extending to the second area; S3) partly removing the medium insulation layer and then further partly removing the silicon component layer so as to form a backplate diagram; S4) depositing a sacrificial layer (32) above the SOI base; S5) forming a Poly Sil-xGex film (33) on the sacrificial layer; S6) forming a back cavity (34); and S7) eroding the sacrificial layer to form a chamber (36) in communication with the back cavity. Besides, a chip (10) fabricated by the above method is also disclosed.
    • 一种用于集成IC和MEMS部件的方法包括以下步骤:S1)提供具有第一区域(21)和第二区域(22)的SOI基底(20); S2)通过标准半导体工艺在第一区域上制造IC,同时形成延伸到第二区域的金属导电层(26)和介质绝缘层(25c); S3)部分地去除介质绝缘层,然后进一步部分去除硅组分层以形成背板图; S4)在SOI基底上方沉积牺牲层(32); S5)在牺牲层上形成Poly Sil-xGex膜(33); S6)形成后腔(34); 和S7)侵蚀牺牲层以形成与后腔连通的腔室(36)。 此外,还公开了通过上述方法制造的芯片(10)。