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1. 发明申请

US20060197140A1 Vertical transistor NVM with body contact structure and method 审中-公开
标题翻译：垂直晶体管NVM具有体接触结构和方法
公开(公告)号：US20060197140A1
公开(公告)日：2006-09-07
申请号：US11072878
申请日：2005-03-04
申请人： Ramachandran Muralidhar , Yang Du , Leo Mathew
发明人： Ramachandran Muralidhar , Yang Du , Leo Mathew
IPC分类号： H01L29/788
CPC分类号： H01L27/11521 , H01L29/40114 , H01L29/66825 , H01L29/7851 , H01L29/7881
摘要： A semiconductor device (151) is provided which comprises (a) a semiconductor substrate (103); (b) a fin (109) comprising a semiconductor material and being in electrical contact with the substrate; (c) a first floating gate (121) disposed on a first side of said fin; and (d) a control gate (107).
摘要翻译：提供半导体器件（151），其包括（a）半导体衬底（103）; （b）包括半导体材料并与基底电接触的翅片（109）; （c）设置在所述散热片的第一侧上的第一浮动栅极（121）和（d）控制门（107）。

2. 发明申请

US20050124120A1 Method and circuit for multiplying signals with a transistor having more than one independent gate structure 失效
公开(公告)号：US20050124120A1
公开(公告)日：2005-06-09
申请号：US10728621
申请日：2003-12-05
申请人： Yang Du , Leo Mathew
发明人： Yang Du , Leo Mathew
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/84 , H01L29/423 , H01L29/786 , H01L29/80 , H01L21/3205 , H01L21/4763 , H01L31/112
CPC分类号： H01L29/42384 , H01L21/823437 , H01L21/84 , H01L29/66818 , H01L29/785
摘要： A double gate semiconductor device (2006) is used beneficially as a multiplier (2000). The double gate semiconductor device (2006) has a lateral fin (105) as the channel region with the gates formed opposite each other on both sides of the fin. The lateral positioning of the fin provides symmetry between the two gates. To increase drive current, multiple transistors are easily connected in parallel by having a continuous fin structure (2106) with alternating source/drain terminals (2120, 2122, 2124, 2126) in which the sources are connected together and the drains are connected together. Gates (2116, 2110) are positioned between each pair of adjacent source/drain terminals and electrically connected together. The multiplier (2000) may also be used as a mixer and further as a phase detector.

3. 发明授权

US07585735B2 Asymmetric spacers and asymmetric source/drain extension layers 有权
标题翻译：非对称隔离层和不对称源极/漏极延伸层
公开(公告)号：US07585735B2
公开(公告)日：2009-09-08
申请号：US11047946
申请日：2005-02-01
申请人： Leo Mathew , Yang Du , Bich-Yen Nguyen , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Bich-Yen Nguyen , Voon-Yew Thean
IPC分类号： H01L21/8234
CPC分类号： H01L29/4983 , H01L29/165 , H01L29/517 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/66628 , H01L29/66659 , H01L29/7843
摘要： A method of forming a semiconductor device is provided in which a substrate (102) is provided which has a gate dielectric layer (106) disposed thereon, and a gate electrode (116) having first and second sidewalls is formed over the gate dielectric layer. First (146) and second (150) extension spacer structures are formed adjacent the first and second sidewalls, respectively. In the resulting device: (a) the first and second extension spacer structures have different dimensions; (b) the first and second extension spacer structures comprise first and second distinct materials; (c) the device has asymmetric source/drain extensions (162); and/or (d) the device has an oxide layer (160) disposed between the first extension spacer structure and the gate electrode, and either (i) the device has no dielectric layer disposed between the second extension spacer structure and the gate electrode, or (ii) the device has a second dielectric layer disposed between the second extension spacer structure and the gate electrode, and the first dielectric layer is substantially thicker than the second dielectric layer.
摘要翻译：提供一种形成半导体器件的方法，其中设置有其上设置有栅介质层（106）的衬底（102），并且在栅极介电层上形成具有第一和第二侧壁的栅电极（116）。分别在第一和第二侧壁附近形成第一（146）和第二（150）延伸间隔结构。在所得装置中：（a）第一和第二延伸间隔结构具有不同的尺寸; （b）第一和第二延伸间隔结构包括第一和第二不同材料; （c）该器件具有不对称的源极/漏极延伸部分（162）; 和/或（d）所述器件具有设置在所述第一延伸间隔物结构和所述栅电极之间的氧化物层（160），以及（i）所述器件在所述第二延伸间隔物结构和所述栅电极之间没有设置介电层，或者（ii）该器件具有设置在第二延伸间隔物结构和栅极之间的第二介电层，并且第一介电层基本上比第二介电层更厚。

4. 发明授权

US07494832B2 Semiconductor optical devices and method for forming 失效
标题翻译：半导体光学器件及其形成方法
公开(公告)号：US07494832B2
公开(公告)日：2009-02-24
申请号：US11465402
申请日：2006-08-17
申请人： Leo Mathew , Yang Du , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Voon-Yew Thean
IPC分类号： H01L21/00
CPC分类号： H01S5/0262 , B82Y20/00 , H01L27/14643 , H01L27/14687 , H01L29/66803 , H01L29/785 , H01L31/0384 , H01L31/105 , H01L33/08 , H01L33/18 , H01L33/24 , H01S3/169 , H01S5/0261 , H01S5/0421 , H01S5/0425 , H01S5/2205 , H01S5/304 , Y10S977/95
摘要： A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.
摘要翻译：半导体光学器件包括绝缘层，形成在绝缘层上的光电区域，形成在绝缘层上并与光电区域的第一侧接触的具有第一导电类型的第一电极和具有第二导电类型的第二电极形成在绝缘层上并与光电区域的第二面接触。光电区域可以包括纳米团簇或多孔硅，使得该器件作为发光器件工作。或者，光电区域可以包括本征半导体材料，使得该器件作为光感测装置工作。半导体光学器件可以被进一步表征为垂直光学器件。在一个实施例中，包括发光和光感测装置的不同类型的光学装置可以集成在一起。光学器件还可以与诸如垂直场效应晶体管的其它类型的半导体器件集成。

5. 发明申请

US20070126076A1 SEMICONDUCTOR OPTICAL DEVICES AND METHOD FOR FORMING 失效
标题翻译：半导体光学器件及其形成方法
公开(公告)号：US20070126076A1
公开(公告)日：2007-06-07
申请号：US11465402
申请日：2006-08-17
申请人： Leo Mathew , Yang Du , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Voon-Yew Thean
IPC分类号： H01L31/107
CPC分类号： H01S5/0262 , B82Y20/00 , H01L27/14643 , H01L27/14687 , H01L29/66803 , H01L29/785 , H01L31/0384 , H01L31/105 , H01L33/08 , H01L33/18 , H01L33/24 , H01S3/169 , H01S5/0261 , H01S5/0421 , H01S5/0425 , H01S5/2205 , H01S5/304 , Y10S977/95
摘要： A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.
摘要翻译：半导体光学器件包括绝缘层，形成在绝缘层上的光电区域，形成在绝缘层上并与光电区域的第一侧接触的具有第一导电类型的第一电极和具有第二导电类型的第二电极形成在绝缘层上并与光电区域的第二面接触。光电区域可以包括纳米团簇或多孔硅，使得该器件作为发光器件工作。或者，光电区域可以包括本征半导体材料，使得该器件作为光感测装置工作。半导体光学器件可以被进一步表征为垂直光学器件。在一个实施例中，包括发光和光感测装置的不同类型的光学装置可以集成在一起。光学器件还可以与诸如垂直场效应晶体管的其它类型的半导体器件集成。

6. 发明申请

US20050277211A1 Semiconductor optical devices and method for forming 有权
标题翻译：半导体光学器件及其形成方法
公开(公告)号：US20050277211A1
公开(公告)日：2005-12-15
申请号：US10865451
申请日：2004-06-10
申请人： Leo Mathew , Yang Du , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Voon-Yew Thean
IPC分类号： H01L21/00 , H01L21/44 , H01L21/48 , H01L21/50 , H01L33/08 , H01L33/18 , H01L33/24 , H01S5/026 , H01S5/042 , H01S5/22 , H01S5/30
CPC分类号： H01S5/0262 , B82Y20/00 , H01L27/14643 , H01L27/14687 , H01L29/66803 , H01L29/785 , H01L31/0384 , H01L31/105 , H01L33/08 , H01L33/18 , H01L33/24 , H01S3/169 , H01S5/0261 , H01S5/0421 , H01S5/0425 , H01S5/2205 , H01S5/304 , Y10S977/95
摘要： A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.
摘要翻译：半导体光学器件包括绝缘层，形成在绝缘层上的光电区域，形成在绝缘层上并与光电区域的第一侧接触的具有第一导电类型的第一电极和具有第二导电类型的第二电极形成在绝缘层上并与光电区域的第二面接触。光电区域可以包括纳米团簇或多孔硅，使得该器件作为发光器件工作。或者，光电区域可以包括本征半导体材料，使得该器件作为光感测装置工作。半导体光学器件可以被进一步表征为垂直光学器件。在一个实施例中，包括发光和光感测装置的不同类型的光学装置可以集成在一起。光学器件还可以与诸如垂直场效应晶体管的其它类型的半导体器件集成。

7. 发明申请

US20060170016A1 Asymmetric spacers and asymmetric source/drain extension layers 有权
标题翻译：非对称隔离层和不对称源极/漏极延伸层
公开(公告)号：US20060170016A1
公开(公告)日：2006-08-03
申请号：US11047946
申请日：2005-02-01
申请人： Leo Mathew , Yang Du , Bich-Yen Nguyen , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Bich-Yen Nguyen , Voon-Yew Thean
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4983 , H01L29/165 , H01L29/517 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/66628 , H01L29/66659 , H01L29/7843
摘要： A method of forming a semiconductor device is provided in which a substrate (102) is provided which has a gate dielectric layer (106) disposed thereon, and a gate electrode (116) having first and second sidewalls is formed over the gate dielectric layer. First (146) and second (150) extension spacer structures are formed adjacent the first and second sidewalls, respectively. In the resulting device: (a) the first and second extension spacer structures have different dimensions; (b) the first and second extension spacer structures comprise first and second distinct materials; (c) the device has asymmetric source/drain extensions (162); and/or (d) the device has an oxide layer (160) disposed between the first extension spacer structure and the gate electrode, and either (i) the device has no dielectric layer disposed between the second extension spacer structure and the gate electrode, or (ii) the device has a second dielectric layer disposed between the second extension spacer structure and the gate electrode, and the first dielectric layer is substantially thicker than the second dielectric layer.
摘要翻译：提供一种形成半导体器件的方法，其中设置有其上设置有栅介质层（106）的衬底（102），并且在栅极介电层上形成具有第一和第二侧壁的栅电极（116）。分别在第一和第二侧壁附近形成第一（146）和第二（150）延伸间隔结构。在所得装置中：（a）第一和第二延伸间隔结构具有不同的尺寸; （b）第一和第二延伸间隔结构包括第一和第二不同材料; （c）该器件具有不对称的源极/漏极延伸部分（162）; 和/或（d）所述器件具有设置在所述第一延伸间隔物结构和所述栅电极之间的氧化物层（160），以及（i）所述器件在所述第二延伸间隔物结构和所述栅电极之间没有设置介电层，或者（ii）该器件具有设置在第二延伸间隔物结构和栅极之间的第二介电层，并且第一介电层基本上比第二介电层更厚。

8. 发明授权

US06969656B2 Method and circuit for multiplying signals with a transistor having more than one independent gate structure 失效
标题翻译：用于将信号与具有多于一个独立栅极结构的晶体管相乘的方法和电路
公开(公告)号：US06969656B2
公开(公告)日：2005-11-29
申请号：US10728621
申请日：2003-12-05
申请人： Yang Du , Leo Mathew
发明人： Yang Du , Leo Mathew
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/84 , H01L29/423 , H01L29/786
CPC分类号： H01L29/42384 , H01L21/823437 , H01L21/84 , H01L29/66818 , H01L29/785
摘要： A double gate semiconductor device (2006) is used beneficially as a multiplier (2000). The double gate semiconductor device (2006) has a lateral fin (105) as the channel region with the gates formed opposite each other on both sides of the fin. The lateral positioning of the fin provides symmetry between the two gates. To increase drive current, multiple transistors are easily connected in parallel by having a continuous fin structure (2106) with alternating source/drain terminals (2120, 2122, 2124, 2126) in which the sources are connected together and the drains are connected together. Gates (2116, 2110) are positioned between each pair of adjacent source/drain terminals and electrically connected together. The multiplier (2000) may also be used as a mixer and further as a phase detector.
摘要翻译：双门半导体器件（2006）有效地用作乘法器（2000）。双栅极半导体器件（2006）具有作为沟道区域的侧鳍（105），栅极的两侧具有彼此相对的栅极。翅片的横向定位在两个门之间提供对称性。为了增加驱动电流，多个晶体管通过具有连续的鳍状结构（2106）容易地并联连接，其中源极连接在一起并且漏极连接在一起，其具有交替的源极/漏极端子（2120,2122,2124,2126）。门（2116,2110）位于每对相邻的源极/漏极端子之间并电连接在一起。乘法器（2000）也可以用作混频器，并且还可以用作相位检测器。

9. 发明授权

US07521720B2 Semiconductor optical devices having fin structures 失效
标题翻译：具有翅片结构的半导体光学器件
公开(公告)号：US07521720B2
公开(公告)日：2009-04-21
申请号：US11465395
申请日：2006-08-17
申请人： Leo Mathew , Yang Du , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Voon-Yew Thean
IPC分类号： H01L29/16
CPC分类号： H01S5/0262 , B82Y20/00 , H01L27/14643 , H01L27/14687 , H01L29/66803 , H01L29/785 , H01L31/0384 , H01L31/105 , H01L33/08 , H01L33/18 , H01L33/24 , H01S3/169 , H01S5/0261 , H01S5/0421 , H01S5/0425 , H01S5/2205 , H01S5/304 , Y10S977/95
摘要： A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.
摘要翻译：半导体光学器件包括绝缘层，形成在绝缘层上的光电区域，形成在绝缘层上并与光电区域的第一侧接触的具有第一导电类型的第一电极和具有第二导电类型的第二电极形成在绝缘层上并与光电区域的第二面接触。光电区域可以包括纳米团簇或多孔硅，使得该器件作为发光器件工作。或者，光电区域可以包括本征半导体材料，使得该器件作为光感测装置工作。半导体光学器件可以被进一步表征为垂直光学器件。在一个实施例中，包括发光和光感测装置的不同类型的光学装置可以集成在一起。光学器件还可以与诸如垂直场效应晶体管的其它类型的半导体器件集成。

10. 发明授权

US07112455B2 Semiconductor optical devices and method for forming 有权
公开(公告)号：US07112455B2
公开(公告)日：2006-09-26
申请号：US10865451
申请日：2004-06-10
申请人： Leo Mathew , Yang Du , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Voon-Yew Thean
IPC分类号： H01L21/00
CPC分类号： H01S5/0262 , B82Y20/00 , H01L27/14643 , H01L27/14687 , H01L29/66803 , H01L29/785 , H01L31/0384 , H01L31/105 , H01L33/08 , H01L33/18 , H01L33/24 , H01S3/169 , H01S5/0261 , H01S5/0421 , H01S5/0425 , H01S5/2205 , H01S5/304 , Y10S977/95
摘要： A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.

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