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1. 发明申请

US20070205421A1 SEMICONDUCTOR OPTICAL DEVICES AND METHOD FOR FORMING 失效
公开(公告)号：US20070205421A1
公开(公告)日：2007-09-06
申请号：US11465395
申请日：2006-08-17
申请人： Leo Mathew , Yang Du , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Voon-Yew Thean
IPC分类号： H01L33/00 , H01L31/12 , H01L27/15 , H01L29/26
CPC分类号： H01S5/0262 , B82Y20/00 , H01L27/14643 , H01L27/14687 , H01L29/66803 , H01L29/785 , H01L31/0384 , H01L31/105 , H01L33/08 , H01L33/18 , H01L33/24 , H01S3/169 , H01S5/0261 , H01S5/0421 , H01S5/0425 , H01S5/2205 , H01S5/304 , Y10S977/95
摘要： A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.

2. 发明授权

US07521720B2 Semiconductor optical devices having fin structures 失效
标题翻译：具有翅片结构的半导体光学器件
公开(公告)号：US07521720B2
公开(公告)日：2009-04-21
申请号：US11465395
申请日：2006-08-17
申请人： Leo Mathew , Yang Du , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Voon-Yew Thean
IPC分类号： H01L29/16
CPC分类号： H01S5/0262 , B82Y20/00 , H01L27/14643 , H01L27/14687 , H01L29/66803 , H01L29/785 , H01L31/0384 , H01L31/105 , H01L33/08 , H01L33/18 , H01L33/24 , H01S3/169 , H01S5/0261 , H01S5/0421 , H01S5/0425 , H01S5/2205 , H01S5/304 , Y10S977/95
摘要： A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.
摘要翻译：半导体光学器件包括绝缘层，形成在绝缘层上的光电区域，形成在绝缘层上并与光电区域的第一侧接触的具有第一导电类型的第一电极和具有第二导电类型的第二电极形成在绝缘层上并与光电区域的第二面接触。光电区域可以包括纳米团簇或多孔硅，使得该器件作为发光器件工作。或者，光电区域可以包括本征半导体材料，使得该器件作为光感测装置工作。半导体光学器件可以被进一步表征为垂直光学器件。在一个实施例中，包括发光和光感测装置的不同类型的光学装置可以集成在一起。光学器件还可以与诸如垂直场效应晶体管的其它类型的半导体器件集成。

3. 发明授权

US07112455B2 Semiconductor optical devices and method for forming 有权
公开(公告)号：US07112455B2
公开(公告)日：2006-09-26
申请号：US10865451
申请日：2004-06-10
申请人： Leo Mathew , Yang Du , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Voon-Yew Thean
IPC分类号： H01L21/00
CPC分类号： H01S5/0262 , B82Y20/00 , H01L27/14643 , H01L27/14687 , H01L29/66803 , H01L29/785 , H01L31/0384 , H01L31/105 , H01L33/08 , H01L33/18 , H01L33/24 , H01S3/169 , H01S5/0261 , H01S5/0421 , H01S5/0425 , H01S5/2205 , H01S5/304 , Y10S977/95
摘要： A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.

4. 发明授权

US07585735B2 Asymmetric spacers and asymmetric source/drain extension layers 有权
标题翻译：非对称隔离层和不对称源极/漏极延伸层
公开(公告)号：US07585735B2
公开(公告)日：2009-09-08
申请号：US11047946
申请日：2005-02-01
申请人： Leo Mathew , Yang Du , Bich-Yen Nguyen , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Bich-Yen Nguyen , Voon-Yew Thean
IPC分类号： H01L21/8234
CPC分类号： H01L29/4983 , H01L29/165 , H01L29/517 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/66628 , H01L29/66659 , H01L29/7843
摘要： A method of forming a semiconductor device is provided in which a substrate (102) is provided which has a gate dielectric layer (106) disposed thereon, and a gate electrode (116) having first and second sidewalls is formed over the gate dielectric layer. First (146) and second (150) extension spacer structures are formed adjacent the first and second sidewalls, respectively. In the resulting device: (a) the first and second extension spacer structures have different dimensions; (b) the first and second extension spacer structures comprise first and second distinct materials; (c) the device has asymmetric source/drain extensions (162); and/or (d) the device has an oxide layer (160) disposed between the first extension spacer structure and the gate electrode, and either (i) the device has no dielectric layer disposed between the second extension spacer structure and the gate electrode, or (ii) the device has a second dielectric layer disposed between the second extension spacer structure and the gate electrode, and the first dielectric layer is substantially thicker than the second dielectric layer.
摘要翻译：提供一种形成半导体器件的方法，其中设置有其上设置有栅介质层（106）的衬底（102），并且在栅极介电层上形成具有第一和第二侧壁的栅电极（116）。分别在第一和第二侧壁附近形成第一（146）和第二（150）延伸间隔结构。在所得装置中：（a）第一和第二延伸间隔结构具有不同的尺寸; （b）第一和第二延伸间隔结构包括第一和第二不同材料; （c）该器件具有不对称的源极/漏极延伸部分（162）; 和/或（d）所述器件具有设置在所述第一延伸间隔物结构和所述栅电极之间的氧化物层（160），以及（i）所述器件在所述第二延伸间隔物结构和所述栅电极之间没有设置介电层，或者（ii）该器件具有设置在第二延伸间隔物结构和栅极之间的第二介电层，并且第一介电层基本上比第二介电层更厚。

5. 发明授权

US07494832B2 Semiconductor optical devices and method for forming 失效
标题翻译：半导体光学器件及其形成方法
公开(公告)号：US07494832B2
公开(公告)日：2009-02-24
申请号：US11465402
申请日：2006-08-17
申请人： Leo Mathew , Yang Du , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Voon-Yew Thean
IPC分类号： H01L21/00
CPC分类号： H01S5/0262 , B82Y20/00 , H01L27/14643 , H01L27/14687 , H01L29/66803 , H01L29/785 , H01L31/0384 , H01L31/105 , H01L33/08 , H01L33/18 , H01L33/24 , H01S3/169 , H01S5/0261 , H01S5/0421 , H01S5/0425 , H01S5/2205 , H01S5/304 , Y10S977/95
摘要： A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.
摘要翻译：半导体光学器件包括绝缘层，形成在绝缘层上的光电区域，形成在绝缘层上并与光电区域的第一侧接触的具有第一导电类型的第一电极和具有第二导电类型的第二电极形成在绝缘层上并与光电区域的第二面接触。光电区域可以包括纳米团簇或多孔硅，使得该器件作为发光器件工作。或者，光电区域可以包括本征半导体材料，使得该器件作为光感测装置工作。半导体光学器件可以被进一步表征为垂直光学器件。在一个实施例中，包括发光和光感测装置的不同类型的光学装置可以集成在一起。光学器件还可以与诸如垂直场效应晶体管的其它类型的半导体器件集成。

6. 发明申请

US20070126076A1 SEMICONDUCTOR OPTICAL DEVICES AND METHOD FOR FORMING 失效
标题翻译：半导体光学器件及其形成方法
公开(公告)号：US20070126076A1
公开(公告)日：2007-06-07
申请号：US11465402
申请日：2006-08-17
申请人： Leo Mathew , Yang Du , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Voon-Yew Thean
IPC分类号： H01L31/107
CPC分类号： H01S5/0262 , B82Y20/00 , H01L27/14643 , H01L27/14687 , H01L29/66803 , H01L29/785 , H01L31/0384 , H01L31/105 , H01L33/08 , H01L33/18 , H01L33/24 , H01S3/169 , H01S5/0261 , H01S5/0421 , H01S5/0425 , H01S5/2205 , H01S5/304 , Y10S977/95
摘要： A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.
摘要翻译：半导体光学器件包括绝缘层，形成在绝缘层上的光电区域，形成在绝缘层上并与光电区域的第一侧接触的具有第一导电类型的第一电极和具有第二导电类型的第二电极形成在绝缘层上并与光电区域的第二面接触。光电区域可以包括纳米团簇或多孔硅，使得该器件作为发光器件工作。或者，光电区域可以包括本征半导体材料，使得该器件作为光感测装置工作。半导体光学器件可以被进一步表征为垂直光学器件。在一个实施例中，包括发光和光感测装置的不同类型的光学装置可以集成在一起。光学器件还可以与诸如垂直场效应晶体管的其它类型的半导体器件集成。

7. 发明申请

US20050277211A1 Semiconductor optical devices and method for forming 有权
标题翻译：半导体光学器件及其形成方法
公开(公告)号：US20050277211A1
公开(公告)日：2005-12-15
申请号：US10865451
申请日：2004-06-10
申请人： Leo Mathew , Yang Du , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Voon-Yew Thean
IPC分类号： H01L21/00 , H01L21/44 , H01L21/48 , H01L21/50 , H01L33/08 , H01L33/18 , H01L33/24 , H01S5/026 , H01S5/042 , H01S5/22 , H01S5/30
CPC分类号： H01S5/0262 , B82Y20/00 , H01L27/14643 , H01L27/14687 , H01L29/66803 , H01L29/785 , H01L31/0384 , H01L31/105 , H01L33/08 , H01L33/18 , H01L33/24 , H01S3/169 , H01S5/0261 , H01S5/0421 , H01S5/0425 , H01S5/2205 , H01S5/304 , Y10S977/95
摘要： A semiconductor optical device includes an insulating layer, a photoelectric region formed on the insulating layer, a first electrode having a first conductivity type formed on the insulating layer and contacting a first side of the photoelectric region, and a second electrode having a second conductivity type formed on the insulating layer and contacting a second side of the photoelectric region. The photoelectric region may include nanoclusters or porous silicon such that the device operates as a light emitting device. Alternatively, the photoelectric region may include an intrinsic semiconductor material such that the device operates as a light sensing device. The semiconductor optical device may be further characterized as a vertical optical device. In one embodiment, different types of optical devices, including light emitting and light sensing devices, may be integrated together. The optical devices may also be integrated with other types of semiconductor devices, such as vertical field-effect transistors.
摘要翻译：半导体光学器件包括绝缘层，形成在绝缘层上的光电区域，形成在绝缘层上并与光电区域的第一侧接触的具有第一导电类型的第一电极和具有第二导电类型的第二电极形成在绝缘层上并与光电区域的第二面接触。光电区域可以包括纳米团簇或多孔硅，使得该器件作为发光器件工作。或者，光电区域可以包括本征半导体材料，使得该器件作为光感测装置工作。半导体光学器件可以被进一步表征为垂直光学器件。在一个实施例中，包括发光和光感测装置的不同类型的光学装置可以集成在一起。光学器件还可以与诸如垂直场效应晶体管的其它类型的半导体器件集成。

8. 发明申请

US20060170016A1 Asymmetric spacers and asymmetric source/drain extension layers 有权
标题翻译：非对称隔离层和不对称源极/漏极延伸层
公开(公告)号：US20060170016A1
公开(公告)日：2006-08-03
申请号：US11047946
申请日：2005-02-01
申请人： Leo Mathew , Yang Du , Bich-Yen Nguyen , Voon-Yew Thean
发明人： Leo Mathew , Yang Du , Bich-Yen Nguyen , Voon-Yew Thean
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4983 , H01L29/165 , H01L29/517 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/66628 , H01L29/66659 , H01L29/7843
摘要： A method of forming a semiconductor device is provided in which a substrate (102) is provided which has a gate dielectric layer (106) disposed thereon, and a gate electrode (116) having first and second sidewalls is formed over the gate dielectric layer. First (146) and second (150) extension spacer structures are formed adjacent the first and second sidewalls, respectively. In the resulting device: (a) the first and second extension spacer structures have different dimensions; (b) the first and second extension spacer structures comprise first and second distinct materials; (c) the device has asymmetric source/drain extensions (162); and/or (d) the device has an oxide layer (160) disposed between the first extension spacer structure and the gate electrode, and either (i) the device has no dielectric layer disposed between the second extension spacer structure and the gate electrode, or (ii) the device has a second dielectric layer disposed between the second extension spacer structure and the gate electrode, and the first dielectric layer is substantially thicker than the second dielectric layer.
摘要翻译：提供一种形成半导体器件的方法，其中设置有其上设置有栅介质层（106）的衬底（102），并且在栅极介电层上形成具有第一和第二侧壁的栅电极（116）。分别在第一和第二侧壁附近形成第一（146）和第二（150）延伸间隔结构。在所得装置中：（a）第一和第二延伸间隔结构具有不同的尺寸; （b）第一和第二延伸间隔结构包括第一和第二不同材料; （c）该器件具有不对称的源极/漏极延伸部分（162）; 和/或（d）所述器件具有设置在所述第一延伸间隔物结构和所述栅电极之间的氧化物层（160），以及（i）所述器件在所述第二延伸间隔物结构和所述栅电极之间没有设置介电层，或者（ii）该器件具有设置在第二延伸间隔物结构和栅极之间的第二介电层，并且第一介电层基本上比第二介电层更厚。

9. 发明授权

US07737018B2 Process of forming an electronic device including forming a gate electrode layer and forming a patterned masking layer 有权
标题翻译：形成包括形成栅电极层并形成图案化掩模层的电子器件的工艺
公开(公告)号：US07737018B2
公开(公告)日：2010-06-15
申请号：US11671748
申请日：2007-02-06
申请人： Leo Mathew , Voon-Yew Thean , Vishal P. Trivedi
发明人： Leo Mathew , Voon-Yew Thean , Vishal P. Trivedi
IPC分类号： H01L21/3205
CPC分类号： H01L21/28123 , H01L21/2652 , H01L21/32139 , H01L29/4966
摘要： A process of forming an electronic device can include forming a gate electrode layer and forming a patterned masking layer. In a first aspect, a process operation is performed before removing substantially all of a lower portion of the gate electrode layer. In a second aspect, a gate dielectric layer is formed prior to forming the gate electrode layer, and a portion of the gate dielectric layer is exposed after removing the patterned masking layer and prior to forming another masking layer. A portion of the gate electrode layer remains covered during a process where some or all of the portion would be otherwise removed or consumed. By forming the electronic device using such a process, damage to the gate electrode structure while performing subsequent processing can be significantly reduced.
摘要翻译：形成电子器件的工艺可以包括形成栅极电极层并形成图案化掩模层。在第一方面，在去除栅极电极层的基本上所有下部之前进行处理操作。在第二方面，在形成栅极电极层之前形成栅极电介质层，并且在去除图案化掩模层之后并且在形成另一个掩模层之前，一部分栅极电介质层被曝光。在其中将部分或全部部分将被去除或消耗的过程中，栅电极层的一部分保持覆盖。通过使用这种处理形成电子器件，可以显着地减少执行后续处理时对栅电极结构的损坏。

10. 发明申请

US20080020515A1 Twisted Dual-Substrate Orientation (DSO) Substrates 有权
标题翻译：扭转双基板取向（DSO）基板
公开(公告)号：US20080020515A1
公开(公告)日：2008-01-24
申请号：US11458902
申请日：2006-07-20
申请人： Ted R. White , Leo Mathew , Bich-Yen Nguyen , Zhonghai Shi , Voon-Yew Thean , Mariam G. Sadaka
发明人： Ted R. White , Leo Mathew , Bich-Yen Nguyen , Zhonghai Shi , Voon-Yew Thean , Mariam G. Sadaka
IPC分类号： H01L21/00
CPC分类号： H01L21/845 , H01L21/76264 , H01L27/1203 , H01L27/1207 , H01L27/1211 , H01L29/045 , H01L29/66795 , H01L29/785 , H01L29/7851
摘要： A semiconductor process and apparatus provide a dual or hybrid substrate by forming a second semiconductor layer (214) that is isolated from, and crystallographically rotated with respect to, an underlying first semiconductor layer (212) by a buried insulator layer (213); forming an STI region (218) in the second semiconductor layer (214) and buried insulator layer (213); exposing the first semiconductor layer (212) in a first area (219) of a STI region (218); epitaxially growing a first epitaxial semiconductor layer (220) from the exposed first semiconductor layer (212); and selectively etching the first epitaxial semiconductor layer (220) and the second semiconductor layer (214) to form CMOS FinFET channel regions (e.g, 223) and planar channel regions (e.g., 224) from the first epitaxial semiconductor layer (220) and the second semiconductor layer (214).
摘要翻译：半导体工艺和装置通过形成第二半导体层（214）提供双或混合衬底，所述第二半导体层通过掩埋绝缘体层与基底第一半导体层隔离并且相对于下面的第一半导体层进行晶体学旋转; 在第二半导体层（214）和掩埋绝缘体层（213）中形成STI区（218）; 在STI区域（218）的第一区域（219）中暴露所述第一半导体层（212）; 从所述暴露的第一半导体层（212）外延生长第一外延半导体层（220）; 以及选择性地蚀刻所述第一外延半导体层（220）和所述第二半导体层（214）以形成来自所述第一外延半导体层（220）的CMOS FinFET沟道区域（例如，223）和平面沟道区域（例如，224）第二半导体层（214）。

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