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1. 发明申请

US20050000801A1 Method and apparatus for electrochemical mechanical processing 失效
标题翻译：电化学机械加工的方法和装置
公开(公告)号：US20050000801A1
公开(公告)日：2005-01-06
申请号：US10880752
申请日：2004-06-30
申请人： Yan Wang , Siew Neo , Feng Liu , Stan Tsai , Yongqi Hu , Alain Duboust , Antoine Manens , Ralph Wadensweiler , Rashid Mavliev , Liang-Yuh Chen , Donald Olgado , Paul Butterfield , Ming-Kuei Tseng , Shou-Sung Chang , Lizhong Sun
发明人： Yan Wang , Siew Neo , Feng Liu , Stan Tsai , Yongqi Hu , Alain Duboust , Antoine Manens , Ralph Wadensweiler , Rashid Mavliev , Liang-Yuh Chen , Donald Olgado , Paul Butterfield , Ming-Kuei Tseng , Shou-Sung Chang , Lizhong Sun
IPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/04 , B24B49/16 , B24B53/007 , B24D13/14 , H01L21/321 , C25D17/00
CPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/16 , B24B49/16 , B24B53/017 , H01L21/32125
摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.
摘要翻译：本发明的实施方案通常提供用于在电化学机械平面化系统中处理基底的方法和装置。在一个实施例中，用于抛光衬底的单元包括设置在压板组件的顶表面上的处理衬垫。多个导电元件跨过上平坦化表面以间隔的关系布置，并且适于相对于设置在垫和压板组件之间的电极偏压衬底。多个通道通过压板组件形成在顶表面和限定在压板组件内的气室之间。在另一个实施例中，提供了具有批处理单元和残余处理单元的系统。残余处理单元包括偏置的导电平面化表面。在另外的实施方案中，保护导电元件免受过程化学物质的侵蚀。

2. 发明授权

US07678245B2 Method and apparatus for electrochemical mechanical processing 失效
标题翻译：电化学机械加工的方法和装置
公开(公告)号：US07678245B2
公开(公告)日：2010-03-16
申请号：US10880752
申请日：2004-06-30
申请人： Yan Wang , Siew Neo , Feng Liu , Stan D. Tsai , Yongqi Hu , Alain Duboust , Antoine Manens , Ralph M. Wadensweiler , Rashid Mavliev , Liang-Yuh Chen , Donald J. K. Olgado , Paul D. Butterfield , Ming-Kuei Tseng , Shou-Sung Chang , Lizhong Sun
发明人： Yan Wang , Siew Neo , Feng Liu , Stan D. Tsai , Yongqi Hu , Alain Duboust , Antoine Manens , Ralph M. Wadensweiler , Rashid Mavliev , Liang-Yuh Chen , Donald J. K. Olgado , Paul D. Butterfield , Ming-Kuei Tseng , Shou-Sung Chang , Lizhong Sun
IPC分类号： C25B9/00
CPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/16 , B24B49/16 , B24B53/017 , H01L21/32125
摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.
摘要翻译：本发明的实施方案通常提供用于在电化学机械平面化系统中处理基底的方法和装置。在一个实施例中，用于抛光衬底的单元包括设置在压板组件的顶表面上的处理衬垫。多个导电元件跨过上平坦化表面以间隔的关系布置，并且适于相对于设置在垫和压板组件之间的电极偏压衬底。多个通道通过压板组件形成在顶表面和限定在压板组件内的气室之间。在另一个实施例中，提供了具有批处理单元和残余处理单元的系统。残余处理单元包括偏置的导电平面化表面。在另外的实施方案中，保护导电元件免受过程化学物质的侵蚀。

3. 发明申请

US20050284770A1 Conductive polishing article for electrochemical mechanical polishing 有权
标题翻译：电化学机械抛光用导电抛光制品
公开(公告)号：US20050284770A1
公开(公告)日：2005-12-29
申请号：US11215254
申请日：2005-08-30
申请人： Paul Butterfield , Liang-Yuh Chen , Yonqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai , Feng Liu , Ralph Wadensweiler , Lizhong Sun , Siew Neo , Alain Duboust
发明人： Paul Butterfield , Liang-Yuh Chen , Yonqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai , Feng Liu , Ralph Wadensweiler , Lizhong Sun , Siew Neo , Alain Duboust
IPC分类号： B23H5/00 , B23H5/06 , B23H5/08 , B23H5/10 , B24B37/04 , B24B49/16 , B24B53/007 , B24D13/14 , C25D17/00 , C25D17/10 , H01L21/321
CPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/11 , B24B37/22 , B24B37/24 , B24B37/26 , B24B49/16 , B24B53/017 , C25D17/10 , H01L21/32125
摘要： Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes a ring-shaped upper layer having a polishing surface, and a conductive layer coupled to the upper layer and forming a replaceable assembly therewith.
摘要翻译：提供了用于研磨衬底的抛光制品的实施例。在一个实施例中，抛光制品包括具有抛光表面的环形上层，以及耦合到上层并与其形成可更换组件的导电层。

4. 发明申请

US20080026681A1 CONDUCTIVE POLISHING ARTICLE FOR ELECTROCHEMICAL MECHANICAL POLISHING 失效
标题翻译：电化学机械抛光导电抛光法
公开(公告)号：US20080026681A1
公开(公告)日：2008-01-31
申请号：US11868829
申请日：2007-10-08
申请人： PAUL BUTTERFIELD , Liang-Yuh Chen , Yonqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai , Feng Liu , Ralph Wadensweiler , Lizhong Sun , Siew Neo , Alain Duboust
发明人： PAUL BUTTERFIELD , Liang-Yuh Chen , Yonqi Hu , Antoine Manens , Rashid Mavliev , Stan Tsai , Feng Liu , Ralph Wadensweiler , Lizhong Sun , Siew Neo , Alain Duboust
IPC分类号： B24B29/00
CPC分类号： B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/11 , B24B37/22 , B24B37/24 , B24B37/26 , B24B49/16 , B24B53/017 , C25D17/10 , H01L21/32125
摘要： Embodiments of a polishing article for polishing a substrate are provided. In one embodiment, the polishing article includes an annular upper layer made of a dielectric material coupled to an annular lower layer made of a conductive material, and an annular subpad sandwiched between the annular upper layer and the annular lower layer forming a replaceable assembly therewith.
摘要翻译：提供了用于研磨衬底的抛光制品的实施例。在一个实施例中，抛光制品包括由与由导电材料制成的环形下层耦合的电介质材料制成的环形上层，以及夹在环形上层和环形下层之间的环形子垫，其与之形成可更换组件。

5. 发明申请

US20050133363A1 Conductive polishing article for electrochemical mechanical polishing 失效
标题翻译：电化学机械抛光用导电抛光制品
公开(公告)号：US20050133363A1
公开(公告)日：2005-06-23
申请号：US11031545
申请日：2005-01-08
申请人： Yongqi Hu , Yan Wang , Alain Duboust , Feng Liu , Antoine Manens , Siew Neo , Stan Tsai , Liang-Yuh Chen , Paul Butterfield , Yuan Tian , Sen-Hou Ko
发明人： Yongqi Hu , Yan Wang , Alain Duboust , Feng Liu , Antoine Manens , Siew Neo , Stan Tsai , Liang-Yuh Chen , Paul Butterfield , Yuan Tian , Sen-Hou Ko
IPC分类号： B23H5/08 , B23H5/10 , B24B37/04 , B24B53/007 , B24D13/14 , H01L21/321 , C25D17/00
CPC分类号： B82Y30/00 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/14 , B24B37/16 , B24B37/205 , B24B37/22 , B24B37/24 , B24B37/26 , B24B53/017 , H01L21/32125 , Y10T428/249924
摘要： Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted to polish a substrate. The fabric layer may be woven or non-woven. The conductive layer may be comprised of a soft metal and, in one embodiment, the exposed surface may be planar.
摘要翻译：提供了用于处理基板的抛光制品的实施例。在一个实施例中，用于处理衬底的抛光制品包括其上设置有导电层的织物层。导电层具有适于抛光衬底的暴露表面。织物层可以是编织的或非织造的。导电层可以由软金属构成，并且在一个实施例中，暴露的表面可以是平面的。

6. 发明申请

US20070295611A1 METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE 审中-公开
标题翻译：用于抛光底物的方法和组合物
公开(公告)号：US20070295611A1
公开(公告)日：2007-12-27
申请号：US11764726
申请日：2007-06-18
申请人： FENG LIU , Stan Tsai , Yongqi Hu , Siew Neo , Yan Wang , Alain Duboust , Liang-Yuh Chen
发明人： FENG LIU , Stan Tsai , Yongqi Hu , Siew Neo , Yan Wang , Alain Duboust , Liang-Yuh Chen
IPC分类号： B23H9/00 , B23H7/00
CPC分类号： B23H7/08 , B23H1/022 , B23H1/06
摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition includes an acid based electrolyte system, one or more chelating agents, one or more corrosion inhibitors, one or more inorganic or organic acid salts, one or more pH adjusting agents to provide a pH between about 2 and about 10, a polishing enhancing material selected from the group of abrasive particles, one or more oxidizers, and combinations thereof, and a solvent. The composition may be used in an conductive material removal process including disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising an electrode, providing the composition between the electrode and substrate, applying a bias between the electrode and the substrate, and removing conductive material from the conductive material layer. The ECMP polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as copper, with a reduction in planarization type defects and yielding a desirable surface finish.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料的方法。一方面，组合物包括酸性电解质体系，一种或多种螯合剂，一种或多种腐蚀抑制剂，一种或多种无机或有机酸盐，一种或多种pH调节剂，以提供约2至约10 ，选自磨料颗粒，一种或多种氧化剂及其组合的研磨增强材料和溶剂。该组合物可用于导电材料去除工艺中，包括在包括电极的处理设备中设置其上形成有导电材料层的衬底，在电极和衬底之间提供组合物，在电极和衬底之间施加偏压，以及从导电材料层去除导电材料。本文所述的ECMP抛光组合物和方法提高了材料从衬底表面（例如铜）的有效去除速率，同时平坦化型缺陷减少并产生理想的表面光洁度。

7. 发明授权

US06776693B2 Method and apparatus for face-up substrate polishing 失效
标题翻译：面朝上衬底抛光的方法和装置
公开(公告)号：US06776693B2
公开(公告)日：2004-08-17
申请号：US10163796
申请日：2002-06-04
申请人： Alain Duboust , Shou-Sung Chang , Liang-Yuh Chen , Yan Wang , Siew Neo , Lizhong Sun , Feng Q. Liu
发明人： Alain Duboust , Shou-Sung Chang , Liang-Yuh Chen , Yan Wang , Siew Neo , Lizhong Sun , Feng Q. Liu
IPC分类号： B24B100
CPC分类号： B24B37/046 , B23H5/08 , B24B37/042
摘要： A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a basin and a polishing head. A carrier is disposed in the basin and has a substrate supporting surface. A retaining ring is disposed on the carrier and at least partially circumscribes the substrate supporting surface. The polishing head is supported above the basin and includes a conductive polishing pad. Embodiments may further include a vent to allow gas to escape through the polishing head. Embodiments may further include an electrolyte supply that flows electrolyte into the polishing head and out through a permeable electrode and the conductive pad to the substrate. Embodiments may also be configured with a polishing head diameter smaller than the substrate supported by the carrier.
摘要翻译：提供了一种用于抛光衬底表面的方法和装置。一方面，用于抛光衬底的装置包括盆和抛光头。载体布置在盆中并具有基底支撑表面。保持环设置在载体上并且至少部分地限定基板支撑表面。抛光头支撑在盆面上方，并包括导电抛光垫。实施例还可包括通气孔，以允许气体通过抛光头逸出。实施例还可以包括将电解质流入抛光头并通过可渗透电极流出并将导电垫流到基底的电解质供应。实施例还可以被配置为具有小于由载体支撑的基板的抛光头直径。

8. 发明授权

US06991526B2 Control of removal profile in electrochemically assisted CMP 失效
标题翻译：电化学辅助CMP中去除曲线的控制
公开(公告)号：US06991526B2
公开(公告)日：2006-01-31
申请号：US10244697
申请日：2002-09-16
申请人： Lizhong Sun , Liang-Yuh Chen , Siew Neo , Feng Q. Liu , Alain Duboust , Stan D. Tsai , Rashid Mavliev
发明人： Lizhong Sun , Liang-Yuh Chen , Siew Neo , Feng Q. Liu , Alain Duboust , Stan D. Tsai , Rashid Mavliev
IPC分类号： B24B1/00 , C25F7/00
CPC分类号： B24B37/042 , B23H5/08
摘要： Aspects of the invention generally provide a method and apparatus for polishing a substrate using electrochemical deposition techniques. In one aspect, an apparatus for polishing a substrate comprises a counter-electrode and a pad positioned between a substrate and the counter-electrode and a pad positioned between a substrate and the counter-electrode. A dielectric insert is positioned between the counter-electrode and the substrate. The dielectric insert has a plurality of zones, each zone permitting a separate current density between the counter-electrode and the substrate. In another embodiment, an apparatus for polishing a substrate that include a conductive layer comprises a counter-electrode to the material layer. The counter-electrode comprises a plurality of electrically isolated conductive elements. An electrical connector is separately coupled to each of the conductive elements.
摘要翻译：本发明的各方面通常提供使用电化学沉积技术来抛光衬底的方法和装置。一方面，用于研磨衬底的装置包括对电极和位于衬底和对电极之间的衬垫以及位于衬底和对电极之间的衬垫。电介质插入件位于对电极和衬底之间。电介质插入件具有多个区域，每个区域允许在对电极和衬底之间分开的电流密度。在另一个实施例中，用于抛光包括导电层的衬底的装置包括与材料层相对的对电极。对电极包括多个电绝缘的导电元件。电连接器分别耦合到每个导电元件。

9. 发明申请

US20080051009A1 ENDPOINT FOR ELECTROPROCESSING 失效
标题翻译：电子终端
公开(公告)号：US20080051009A1
公开(公告)日：2008-02-28
申请号：US11930495
申请日：2007-10-31
申请人： Yan Wang , Antoine Manens , Siew Neo , Alain Duboust , Liang-Yuh Chen
发明人： Yan Wang , Antoine Manens , Siew Neo , Alain Duboust , Liang-Yuh Chen
IPC分类号： B24B49/00
CPC分类号： H01L21/32134 , B23H5/06 , B23H5/08 , B24B37/013 , B24B37/042 , B24B37/046 , B24B49/04 , B24B49/10 , B24B49/16 , G01N1/32 , H01L21/32125 , H04N1/00
摘要： Method for process control of electro-processes is provided. In one embodiment, the method includes processing a conductive layer formed on a wafer using a target endpoint, detecting breakthrough of the conductive layer to expose portions of an underlying layer, and adjusting the target endpoint in response to the detected breakthrough. In another embodiment, the target endpoint is adjusted relative to an amount of underlying layer exposed through the conductive layer.
摘要翻译：提供了电工艺过程控制方法。在一个实施例中，该方法包括使用目标端点处理在晶片上形成的导电层，检测导电层的穿透以暴露下层的部分，以及响应于检测到的突破来调整目标端点。在另一个实施例中，相对于通过导电层暴露的下层的量来调整目标端点。

10. 发明申请

US20050061674A1 Endpoint compensation in electroprocessing 审中-公开
标题翻译：电加工终点补偿
公开(公告)号：US20050061674A1
公开(公告)日：2005-03-24
申请号：US10949160
申请日：2004-09-24
申请人： Yan Wang , Antoine Manens , Siew Neo , Alain Duboust , Liang-Yuh Chen
发明人： Yan Wang , Antoine Manens , Siew Neo , Alain Duboust , Liang-Yuh Chen
IPC分类号： B23H5/06 , B23H5/08 , B24B37/04 , B24B49/04 , B24B49/16 , H04N1/00 , B23H9/00
CPC分类号： H01L21/32134 , B23H5/06 , B23H5/08 , B24B37/013 , B24B37/042 , B24B37/046 , B24B49/04 , B24B49/10 , B24B49/16 , G01N1/32 , H01L21/32125 , H04N1/00
摘要： Method for process control of electro-processes is provided. In one embodiment, the method includes processing a conductive layer formed on a wafer using a target endpoint, detecting breakthrough of the conductive layer to expose portions of an underlying layer, and adjusting the target endpoint in response to the detected breakthrough. In another embodiment, the target endpoint is adjusted relative to an amount of underlying layer exposed through the conductive layer.
摘要翻译：提供了电工艺过程控制方法。在一个实施例中，该方法包括使用目标端点处理在晶片上形成的导电层，检测导电层的穿透以暴露下层的部分，以及响应于检测到的突破来调整目标端点。在另一个实施例中，相对于通过导电层暴露的下层的量来调整目标端点。

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