会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Micromachined mass flow sensor and methods of making the same
    • 微加工质量流量传感器及其制造方法
    • US20070011867A1
    • 2007-01-18
    • US11523436
    • 2006-09-19
    • Yahong YaoChih-Chang ChenGafeng WangLiji Huang
    • Yahong YaoChih-Chang ChenGafeng WangLiji Huang
    • H01B13/00
    • G01F1/6845Y10T29/49082Y10T29/49083Y10T29/49117Y10T29/49124Y10T29/49155
    • A mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or lightly doped P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane.
    • 通过在取向<100>的N或轻掺杂P型硅衬底上进行微加工工艺的方法制造质量流量传感器。 该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。 质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列,以便扩大动态测量范围。 对于每个传感器,热隔离膜通过包括首先在衬底上沉积电介质薄膜层然后用TMAH或KOH对体硅进行背面蚀刻工艺或进行干等离子体蚀刻的步骤来形成 直到底部介电薄膜层暴露。 在背面蚀刻体硅之前,通过施加等离子体蚀刻在电介质薄膜层上形成矩形开口,以将加热器的区域和感测元件与膜的其余部分分开。
    • 2. 发明授权
    • Method of manufacturing a flow rate sensor
    • 制造流量传感器的方法
    • US07765679B2
    • 2010-08-03
    • US11523436
    • 2006-09-19
    • Yahong YaoChih-Chang ChenGafeng WangLiji Huang
    • Yahong YaoChih-Chang ChenGafeng WangLiji Huang
    • H05B3/00
    • G01F1/6845Y10T29/49082Y10T29/49083Y10T29/49117Y10T29/49124Y10T29/49155
    • A mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or lightly doped P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane.
    • 通过在取向<100>的N或轻掺杂P型硅衬底上进行微加工工艺的方法制造质量流量传感器。 该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。 质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列,以便扩大动态测量范围。 对于每个传感器,热隔离膜通过包括首先在衬底上沉积电介质薄膜层然后用TMAH或KOH对体硅进行背面蚀刻工艺或进行干等离子体蚀刻的步骤来形成 直到底部介电薄膜层暴露。 在背面蚀刻体硅之前,通过施加等离子体蚀刻在电介质薄膜层上形成矩形开口,以将加热器的区域和感测元件与膜的其余部分分开。
    • 3. 发明申请
    • MEMS TIME-OF-FLIGHT THERMAL MASS FLOW METER
    • MEMS时间飞行热量流量计
    • US20120216629A1
    • 2012-08-30
    • US13035639
    • 2011-02-25
    • Liji HuangChih-Chang ChenYahong YaoXiaozhong Wu
    • Liji HuangChih-Chang ChenYahong YaoXiaozhong Wu
    • G01F1/708
    • G01F1/7084G01F1/72
    • An apparatus comprising a micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon flow sensor, a flow channel package, and a driving circuitry, which operates in a working principle of thermal time-of-flight (TOF) to measure gas or liquid flow speed, is disclosed in the present invention. The micromachining technique for fabricating this MEMS time-of-flight silicon thermal flow sensor can greatly reduce the sensor fabrication cost by batch production. This microfabrication process for silicon time-of-flight thermal flow sensors provides merits of small feature size, low power consumption, and high accuracy compared to conventional manufacturing methods. Thermal time-of-flight technology in principle can provide accurate flow speed measurements for gases regardless of its gas compositions. In addition, the present invention further discloses the package design and driving circuitry which is utilized by the correlated working principle.
    • 一种包括微加工(也称为MEMS,微机电系统)硅流量传感器,流动通道封装和驱动电路的装置,其以热时间飞行(TOF)的工作原理工作以测量气体或液体流量 速度,在本发明中公开。 用于制造这种MEMS飞行时间硅热流量传感器的微加工技术可以通过批量生产大大降低传感器制造成本。 与传统的制造方法相比,这种用于硅时间飞行热流传感器的微加工工艺具有小特征尺寸,低功耗和高精度的优点。 原理上,热时间飞行技术可以为气体提供准确的流速测量,无论其气体成分如何。 此外,本发明还公开了通过相关工作原理利用的封装设计和驱动电路。
    • 5. 发明申请
    • Micromachined thermal mass flow sensors and insertion type flow meters and manufacture methods
    • 微加工热质量流量传感器和插入式流量计及其制造方法
    • US20070017285A1
    • 2007-01-25
    • US11157604
    • 2005-06-21
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • G01F1/68
    • G01F1/6845
    • An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane. This mass flow sensor is operated with two sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates and a second circuit for measuring a flow rate in a second range of flow rates, to significantly increase range of flow rate measurements, while maintains a high degree of measurement accuracy.
    • 通过在取向<100>的N型或P型硅衬底上进行微加工工艺的方法制造集成的质量流量传感器。 该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。 质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列,以便扩大动态测量范围。 对于每个传感器,热隔离膜通过包括首先在衬底上沉积电介质薄膜层然后用TMAH或KOH对体硅进行背面蚀刻工艺或进行干等离子体蚀刻的步骤来形成 直到底部介电薄膜层暴露。 在背面蚀刻体硅之前,通过施加等离子体蚀刻在电介质薄膜层上形成矩形开口,以将加热器的区域和感测元件与膜的其余部分分开。 该质量流量传感器用两组电路操作,第一电路用于测量第一流量范围内的流量,以及用于测量在第二流量范围内的流量的第二电路,以显着增加流量范围 速率测量,同时保持高度的测量精度。
    • 7. 发明授权
    • Robust micromachined thermal mass flow sensor with double side passivated polyimide membrane
    • 具有双面钝化聚酰亚胺膜的坚固的微加工热质量流量传感器
    • US08132455B2
    • 2012-03-13
    • US12538337
    • 2009-08-10
    • Chih-Chang ChenGaofeng WangLiji HuangYahong Yao
    • Chih-Chang ChenGaofeng WangLiji HuangYahong Yao
    • G01F1/68
    • G01F1/6845G01F1/692
    • A micromachined thermal mass flow sensor comprises a high mechanical strength polyimide film as a supporting layer of suspending membrane. The polyimide film provides superior thermal insulating properties to reduce the power consumption of device. Due to the tendency of humidity absorption, the polyimide suspending membrane is double side passivated on both top and bottom surfaces to sustain its long term stability from rush and humid working environment. A thin layer of silicon dioxide deposited by plasma enhanced chemical vapor deposition is overlaid between the silicon nitride and polyimide film to enhance the adhesion property of passivation layers to polyimide surface. With such embodiments, a sturdy and robust micromachined thermal mass flow sensor with high measurement accuracy could be formed.
    • 微加工热质量流量传感器包括作为悬浮膜的支撑层的高机械强度聚酰亚胺膜。 聚酰亚胺薄膜提供优异的隔热性能,以降低设备的功耗。 由于吸湿的趋势,聚酰亚胺悬浮膜在顶面和底面都被双面钝化,以保持其在潮湿和潮湿的工作环境下的长期稳定性。 通过等离子体增强化学气相沉积沉积的薄的二氧化硅层覆盖在氮化硅和聚酰亚胺膜之间,以增强钝化层与聚酰亚胺表面的粘合性能。 通过这样的实施例,可以形成具有高测量精度的坚固且可靠的微加工热质量流量传感器。
    • 9. 发明授权
    • Micromachined gas and liquid concentration sensor and method of making the same
    • 微加工气体和液体浓度传感器及其制造方法
    • US07780343B2
    • 2010-08-24
    • US11774771
    • 2007-07-09
    • Chih-Chang ChenYahong YaoGaofeng WangLiji Huang
    • Chih-Chang ChenYahong YaoGaofeng WangLiji Huang
    • G01N25/00G01K3/00G01K7/00
    • G01N25/20G01F1/6845G01F1/692
    • A device with micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon sensor to measure gas or liquid concentration in a binary mixture formality is disclosed in the present invention. A process for fabricating the said MEMS silicon concentration sensor, which thereby can greatly reduce the sensor fabrication cost by a batch production, is revealed as well. This MEMS process can mass-produce the sensors on silicon substrate in the ways of small size, low power, and high reliability. In addition to the gas or liquid concentration measurement, the present invention further discloses that the said sensor can also readily measure gas or liquid mass flow rate while record the concentration data, which is not viable by other related working principle.
    • 在本发明中公开了一种具有微加工(a.k.a. MEMS,Micro Electro Mechanical Systems)硅传感器的装置,用于测量二元混合物形式中的气体或液体浓度。 也可以揭示制造所述MEMS硅浓度传感器的方法,从而能够通过批量生产大大降低传感器制造成本。 该MEMS工艺可以以小尺寸,低功率和高可靠性的方式批量生产硅衬底上的传感器。 除了气体或液体浓度测量之外,本发明还公开了所述传感器还可以容易地测量气体或液体质量流量,同时记录其他相关工作原理不可行的浓度数据。
    • 10. 发明授权
    • Micromachined thermal mass flow sensors and insertion type flow meters and manufacture methods
    • 微加工热质量流量传感器和插入式流量计及其制造方法
    • US07536908B2
    • 2009-05-26
    • US11157604
    • 2005-06-21
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • Gaofeng WangChih-Chang ChenYahong YaoLiji Huang
    • G01F1/68
    • G01F1/6845
    • An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane. This mass flow sensor is operated with two sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates and a second circuit for measuring a flow rate in a second range of flow rates, to significantly increase range of flow rate measurements, while maintains a high degree of measurement accuracy.
    • 通过在取向<100>的N型或P型硅衬底上进行微加工工艺的方法制造集成的质量流量传感器。 该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件,以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。 质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列,以便扩大动态测量范围。 对于每个传感器,热隔离膜通过包括首先在衬底上沉积电介质薄膜层然后用TMAH或KOH对体硅进行背面蚀刻工艺或进行干等离子体蚀刻的步骤来形成 直到底部介电薄膜层暴露。 在背面蚀刻体硅之前,通过施加等离子体蚀刻在电介质薄膜层上形成矩形开口,以将加热器的区域和感测元件与膜的其余部分分开。 该质量流量传感器用两组电路操作,第一电路用于测量第一流量范围内的流量,以及用于测量在第二流量范围内的流量的第二电路,以显着增加流量范围 速率测量,同时保持高度的测量精度。