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1. 发明申请

US20070052009A1 PHASE CHANGE MEMORY DEVICE AND METHOD OF MAKING SAME 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20070052009A1
公开(公告)日：2007-03-08
申请号：US11470216
申请日：2006-09-05
申请人： Ya-Hong Xie , Tae-Sik Yoon , Zuoming Zhao
发明人： Ya-Hong Xie , Tae-Sik Yoon , Zuoming Zhao
IPC分类号： H01L29/788
CPC分类号： H01L45/143 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/1666 , H01L45/1683
摘要： A phase change random access memory (PRAM) element is provided that is driven by a MOSFET. The MOSFET includes, for example, a source region, a drain region, and a gate electrode disposed between the source region and the drain region. An insulator layer (e.g., oxide layer) separates the gate electrode from contact with the region of the substrate between the source and drain regions. A first electrode contact is coupled to the drain region of the MOSFET at one end and terminates at a surface. The surface of the first electrode contact is coated with a phase change material. A second electrode contact is provided having a surface coated with a layer of phase change material. The PRAM element includes at least one columnar member formed from a phase change material interposed between the phase change material layer of the first electrode and phase change material layer of the second electrode. In certain embodiments, a plurality of columnar members are interposed between the upper and lower layers of phase change material. Each of the columnar members are separated from one another via an insulator material.
摘要翻译：提供由MOSFET驱动的相变随机存取存储器（PRAM）元件。 MOSFET包括例如源极区域，漏极区域和设置在源极区域和漏极区域之间的栅极电极。绝缘体层（例如，氧化物层）将栅电极与源极和漏极区之间的衬底区域接触。第一电极触点在一端耦合到MOSFET的漏极区域并终止于表面。第一电极接触面的表面涂有相变材料。提供具有涂覆有相变材料层的表面的第二电极接触。 PRAM元件包括至少一个由相变材料形成的柱状构件，该相变材料插入在第一电极的相变材料层和第二电极的相变材料层之间。在某些实施例中，多个柱状构件插入在相变材料的上层和下层之间。每个柱状构件通过绝缘体材料彼此分离。

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