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1. 发明授权

US08470669B2 System and method for EEPROM architecture 有权
标题翻译： EEPROM架构的系统和方法
公开(公告)号：US08470669B2
公开(公告)日：2013-06-25
申请号：US12959229
申请日：2010-12-02
申请人： Yipeng Jan , Zhen Yang , Shenghe Huang
发明人： Yipeng Jan , Zhen Yang , Shenghe Huang
IPC分类号： H01L21/00
CPC分类号： H01L21/28273 , H01L21/26586 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： A method for manufacturing an Electrically Erasable Programmable Read-Only Memory (EEPROM) device includes providing a substrate and forming a gate oxide over the substrate. Also, the method includes providing a mask overlying the gate oxide layer, the mask defining a tunnel opening. The method additionally includes performing selective etching over the mask to form a tunnel oxide layer. The method includes forming a floating gate over the tunnel oxide layer and a selective gate over the gate oxide layer. The method includes angle doping a region of the substrate using the floating gate as a mask to obtain a first doped region. The method further includes forming a dielectric layer over the floating gate and a control gate over the dielectric layer. The method additionally includes angle doping a second region of the substrate using the selective gate as a mask to obtain a second doped region, wherein the first and second doped regions partially overlap.
摘要翻译：一种用于制造电可擦除可编程只读存储器（EEPROM）器件的方法包括提供衬底并在衬底上形成栅极氧化物。此外，该方法包括提供覆盖栅极氧化物层的掩模，掩模限定隧道开口。该方法另外包括在掩模上执行选择性蚀刻以形成隧道氧化物层。该方法包括在隧道氧化物层上形成浮置栅极，在栅极氧化物层上形成选择栅极。该方法包括使用浮置栅极作为掩模对衬底的区域进行角度掺杂以获得第一掺杂区域。所述方法还包括在所述浮动栅极上形成介电层和在所述电介质层上形成控制栅极。该方法另外包括使用选择栅极作为掩模的角度掺杂衬底的第二区域以获得第二掺杂区域，其中第一和第二掺杂区域部分重叠。

2. 发明申请

US20110133264A1 SYSTEM AND METHOD FOR EEPROM ARCHITECTURE 有权
标题翻译：用于EEPROM架构的系统和方法
公开(公告)号：US20110133264A1
公开(公告)日：2011-06-09
申请号：US12959229
申请日：2010-12-02
申请人： YIPENG JAN , Zhen Yang , Shenghe Huang
发明人： YIPENG JAN , Zhen Yang , Shenghe Huang
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L21/28273 , H01L21/26586 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： A method for manufacturing an Electrically Erasable Programmable Read-Only Memory (EEPROM) device includes providing a substrate and forming a gate oxide over the substrate. Also, the method includes providing a mask overlying the gate oxide layer, the mask defining a tunnel opening. The method additionally includes performing selective etching over the mask to form a tunnel oxide layer. The method includes forming a floating gate over the tunnel oxide layer and a selective gate over the gate oxide layer. The method includes angle doping a region of the substrate using the floating gate as a mask to obtain a first doped region. The method further includes forming a dielectric layer over the floating gate and a control gate over the dielectric layer. The method additionally includes angle doping a second region of the substrate using the selective gate as a mask to obtain a second doped region, wherein the first and second doped regions partially overlap.
摘要翻译：一种用于制造电可擦除可编程只读存储器（EEPROM）器件的方法包括提供衬底并在衬底上形成栅极氧化物。此外，该方法包括提供覆盖栅极氧化物层的掩模，掩模限定隧道开口。该方法另外包括在掩模上执行选择性蚀刻以形成隧道氧化物层。该方法包括在隧道氧化物层上形成浮置栅极，在栅极氧化物层上形成选择栅极。该方法包括使用浮置栅极作为掩模对衬底的区域进行角度掺杂以获得第一掺杂区域。所述方法还包括在所述浮动栅极上形成介电层和在所述电介质层上形成控制栅极。该方法另外包括使用选择栅极作为掩模的角度掺杂衬底的第二区域以获得第二掺杂区域，其中第一和第二掺杂区域部分重叠。

3. 发明申请

US20190394347A1 PROTECTED ELECTRONIC COMMUNICATION 审中-公开
公开(公告)号：US20190394347A1
公开(公告)日：2019-12-26
申请号：US16481359
申请日：2017-02-15
申请人： Jian-Qun ZHANG , Fei ZHANG , Zhen YANG , Hewlett-Packard Development Company, L.P.
发明人： Jian-Qun Zhang , Fei Zhang , Zhen Yang
IPC分类号： H04N1/00 , H04N1/32
摘要： Examples disclosed herein relate to a protected electronic communication method comprising assigning a protected electronic communication to a data element, wherein the protected electronic communication comprises a plurality of identifier segments, receiving a request for the data element to be included in an analytics report, determining, according to the protected electronic communication, whether the data element is permitted to be included in the analytics report, and in response to determining that the data element is permitted to be included in the analytics report, providing the data element for use in the analytics report.

4. 发明授权

US08676811B2 Method and apparatus of generating update parameters and displaying correlated keywords 有权
公开(公告)号：US08676811B2
公开(公告)日：2014-03-18
申请号：US12594930
申请日：2007-08-28
申请人： Lei Pan , Yuanhu Yao , Zhen Yang , Tianji Zhang
发明人： Lei Pan , Yuanhu Yao , Zhen Yang , Tianji Zhang
IPC分类号： G06F17/30
CPC分类号： G06F17/3097 , G06F17/3064 , G06F17/30699
摘要： Provided is a method of generating updating parameters. The method obtains search keywords used by users within a predetermined time period; counts the search keywords to obtain primary keywords, related keywords, co-search frequencies of each primary keyword and the respective related keywords being searched together, and search frequencies of the primary keywords being searched alone; computes first feature values based on the search frequencies of the primary keywords being searched alone; and then computes second feature values based on the first feature values and the co-search frequencies of the primary keywords and the respective related keywords. The second feature values serve as updating parameters for determining displaying modes of the related keywords. An apparatus of generating updating parameters, and a method and an apparatus of displaying related keywords according to the updating parameters are also provided. The solution keeps abreast with the user trends to allow a better user experience and improve computing performance and efficiency. For a service provider, no special secret algorithm is needed, and the operation is easy with a low development cost.

5. 发明授权

US08639720B2 Data access method and configuration management database system 失效
标题翻译：数据访问方法和配置管理数据库系统
公开(公告)号：US08639720B2
公开(公告)日：2014-01-28
申请号：US12970485
申请日：2010-12-16
申请人： Peng Gao , Shaw-Ben Shi , Zhen Yang , Yue Yu
发明人： Peng Gao , Shaw-Ben Shi , Zhen Yang , Yue Yu
IPC分类号： G06F17/30 , G06F7/00
CPC分类号： G06F17/30
摘要： A computer implemented method for accessing data begins with receipt of a data access request. In response to determining that the requested data needs to be acquired in real time from an original data source, the processor acquires and stores that data. In response to determining that the data cannot be acquired in real time from the data source, the processor acquires the data from a configuration management database in which the requested data was previously stored.
摘要翻译：用于访问数据的计算机实现的方法从接收到数据访问请求开始。响应于确定需要从原始数据源实时获取所请求的数据，处理器获取并存储该数据。响应于确定不能从数据源实时获取数据，处理器从配置管理数据库中获取先前存储了请求的数据的数据。

6. 发明授权

US08242142B2 Cyclohexylamines, phenylamines and uses thereof 失效
标题翻译：环己胺，苯胺及其用途
公开(公告)号：US08242142B2
公开(公告)日：2012-08-14
申请号：US12543480
申请日：2009-08-18
申请人： Shuo Lin , Zhen Yang
发明人： Shuo Lin , Zhen Yang
IPC分类号： A61K31/4406 , C07D409/12
CPC分类号： C07D409/04
摘要： Compounds having the formula I, their methods of synthesis, and pharmaceutically acceptable salts of certain of them are provided in which the variables have the definitions described herein. Compositions including the compounds having the formula I-A in which the variables have the definitions described herein, and methods of using the compositions for the treatment of certain diseases mediated by the up-regulation of Smo are also disclosed.
摘要翻译：提供了具有式I的化合物，其合成方法及其某些药学上可接受的盐，其中变量具有本文所述的定义。还公开了包括具有式I-A的化合物的组合物，其中变量具有本文所述的定义，以及使用该组合物治疗由上调Smo介导的某些疾病的方法。

7. 发明授权

US08048889B2 3,4-disubstituted coumarin and quinolone compounds 失效
标题翻译： 3,4-二取代香豆素和喹诺酮化合物
公开(公告)号：US08048889B2
公开(公告)日：2011-11-01
申请号：US11093846
申请日：2005-03-29
申请人： Bin Xu , Qiang Zhu , Hyun-Joon Cho , Reza Fathi , Zhen Yang , Anthony Sandrasagra , Yixin Liu
发明人： Bin Xu , Qiang Zhu , Hyun-Joon Cho , Reza Fathi , Zhen Yang , Anthony Sandrasagra , Yixin Liu
IPC分类号： A61K31/505 , A61K31/35 , A61K31/425 , A01N43/54 , C07D401/00 , C07D239/02 , C07D277/00 , C07D311/02
CPC分类号： A61K31/366 , A61K31/4025 , A61K31/4433 , A61K31/4709 , A61K31/675
摘要： The present invention relates to 3,4-disubstituted coumarin and quinolone derivatives and processes for their preparation. The invention also related to methods for treating infection of Hepatitis C virus by administering a 3,4-disubstituted coumarin or quinolone derivative.
摘要翻译：本发明涉及3,4-二取代香豆素和喹诺酮衍生物及其制备方法。本发明还涉及通过施用3,4-二取代香豆素或喹诺酮衍生物来治疗丙型肝炎病毒感染的方法。

8. 发明授权

US07923004B2 4-ethynyl pyrazole derivative compounds and methods for treatment of HCV 失效
标题翻译： 4-乙炔基吡唑衍生物化合物和治疗HCV的方法
公开(公告)号：US07923004B2
公开(公告)日：2011-04-12
申请号：US11974744
申请日：2007-10-15
申请人： Guolin Li , Reza Fathi , Zhen Yang , Yun Liao , Qiang Zhu , Angela Lam , Anthony Sandrasagra , Kenneth Nawoschik , Hyun-Joon Cho , Jie Cao , Wu Ruoqiu , C. Richard Wobbe , Yixin Liu
发明人： Guolin Li , Reza Fathi , Zhen Yang , Yun Liao , Qiang Zhu , Angela Lam , Anthony Sandrasagra , Kenneth Nawoschik , Hyun-Joon Cho , Jie Cao , Wu Ruoqiu , C. Richard Wobbe , Yixin Liu
IPC分类号： A61K38/21
CPC分类号： C07D401/12 , C07D405/14 , C07D409/14 , C07D413/12
摘要： Aryl substituted pyrazole derivatives are provided, as well as processes for their preparation. The invention also provides compositions and methods for the treatment of HCV by administering a compound of the present invention, alone or in combination with additional antiviral agents, in a therapeutically effective amount.
摘要翻译：提供了芳基取代的吡唑衍生物，以及其制备方法。本发明还提供了治疗HCV的组合物和方法，其通过以治疗有效量施用单独或与其它抗病毒剂组合的本发明化合物。

9. 发明授权

US07759194B2 Electrically programmable device with embedded EEPROM and method for making thereof 有权
标题翻译：具有嵌入式EEPROM的电子可编程器件及其制造方法
公开(公告)号：US07759194B2
公开(公告)日：2010-07-20
申请号：US12180389
申请日：2008-07-25
申请人： Yi-Peng Chan , Sheng-He Huang , Zhen Yang
发明人： Yi-Peng Chan , Sheng-He Huang , Zhen Yang
IPC分类号： H01L27/115
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/11206 , H01L27/115 , H01L27/11519 , H01L27/11524 , H01L29/42324 , H01L29/7883
摘要： An electrically programmable device with embedded EEPROM and method for making thereof. The method includes providing a substrate including a first device region and a second device region, growing a first gate oxide layer in the first device region and the second device region, and forming a first diffusion region in the first device region and a second diffusion region and a third diffusion region in the second device region. Additionally, the method includes implanting a first plurality of ions to form a fourth diffusion region in the first device region and a fifth diffusion region in the second device region. The fourth diffusion region overlaps with the first diffusion region.
摘要翻译：具有嵌入式EEPROM的电可编程器件及其制造方法。该方法包括提供包括第一器件区域和第二器件区域的衬底，在第一器件区域和第二器件区域中生长第一栅极氧化物层，以及在第一器件区域中形成第一扩散区域和第二扩散区域以及第二装置区域中的第三扩散区域。此外，该方法包括：注入第一多个离子以在第一器件区域中形成第四扩散区域，并在第二器件区域中形成第五扩散区域。第四扩散区域与第一扩散区域重叠。

10. 发明申请

US20100019308A1 ELECTRICALLY PROGRAMMABLE DEVICE WITH EMBEDDED EEPROM AND METHOD FOR MAKING THEREOF 有权
标题翻译：具有嵌入式EEPROM的电可编程器件及其制造方法
公开(公告)号：US20100019308A1
公开(公告)日：2010-01-28
申请号：US12180389
申请日：2008-07-25
申请人： YI-PENG CHAN , Sheng-He Huang , Zhen Yang
发明人： YI-PENG CHAN , Sheng-He Huang , Zhen Yang
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/11206 , H01L27/115 , H01L27/11519 , H01L27/11524 , H01L29/42324 , H01L29/7883
摘要： An electrically programmable device with embedded EEPROM and method for making thereof. The method includes providing a substrate including a first device region and a second device region, growing a first gate oxide layer in the first device region and the second device region, and forming a first diffusion region in the first device region and a second diffusion region and a third diffusion region in the second device region. Additionally, the method includes implanting a first plurality of ions to form a fourth diffusion region in the first device region and a fifth diffusion region in the second device region. The fourth diffusion region overlaps with the first diffusion region.
摘要翻译：具有嵌入式EEPROM的电可编程器件及其制造方法。该方法包括提供包括第一器件区域和第二器件区域的衬底，在第一器件区域和第二器件区域中生长第一栅极氧化物层，以及在第一器件区域中形成第一扩散区域和第二扩散区域以及第二装置区域中的第三扩散区域。此外，该方法包括：注入第一多个离子以在第一器件区域中形成第四扩散区域，并在第二器件区域中形成第五扩散区域。第四扩散区域与第一扩散区域重叠。

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