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    • 4. 发明申请
    • RD ALGORITHM IMPROVEMENT FOR NROM TECHNOLOGY
    • NROM技术的RD算法改进
    • WO2007080586A2
    • 2007-07-19
    • PCT/IL2007/000040
    • 2007-01-10
    • SAIFUN SEMICONDUCTORS LTD.RIZEL, ArikCOHEN, Guy
    • RIZEL, ArikCOHEN, Guy
    • G06F7/38
    • G11C16/0475G11C16/26
    • Selecting a read voltage level for a NVM cell by using an initial value for the read voltage and performing a read operation, comparing an actual number of bits found to an expected number of bits and, if there is a discrepancy between the actual number and the expected number, adjusting the read voltage level, based on variable data such as statistics available, level occupation, neighbor level, previous chunks data, and other data used during read, program or erase. For example, based on a number of missing bits, or upon a result of a previous read operation, or a result obtained at another program level, or upon how many times the memory cell has been cycled, or upon how many memory cells are at each program level, or on a number of bits at another program level in a selected chunk of memory.
    • 通过使用读取电压的初始值并执行读取操作来选择NVM单元的读取电压电平,将发现的实际位数与预期位数进行比较,如果实际数字与 基于可用数据,如可用统计数据,级别占用,邻居级别,先前块数据以及在读取,编程或擦除期间使用的其他数据的可变数据来调整读取电压电平。 例如,基于多个丢失比特,或者基于先前读取操作的结果,或者在另一程序级别获得的结果,或者存储器单元已循环多少次,或者存储器单元处于多少 每个节目级别,或者在所选择的存储器块中的另一程序级的多个位上。