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1. 发明申请

WO2012138758A1 METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL 审中-公开
标题翻译：提供改进过程控制质量标准的方法和系统
公开(公告)号：WO2012138758A1
公开(公告)日：2012-10-11
申请号：PCT/US2012/032169
申请日：2012-04-04
申请人： KLA-TENCOR CORPORATION , KANDEL, Daniel , COHEN, Guy , KLEIN, Dana , LEVINSKI, Vladimir , SAPIENS, Noam , SHULMAN, Alex , KAMENETSKY, Vladimir , AMIT, Eran , VAKSHTEIN, Irina
发明人： KANDEL, Daniel , COHEN, Guy , KLEIN, Dana , LEVINSKI, Vladimir , SAPIENS, Noam , SHULMAN, Alex , KAMENETSKY, Vladimir , AMIT, Eran , VAKSHTEIN, Irina
IPC分类号： G01N37/00
CPC分类号： G03F7/70633 , G01N2223/6116
摘要： The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.
摘要翻译：本发明可以包括从分布在许多晶片的晶片的一个或多个场上的多个测量目标获取多个覆盖度量测量信号，为多个覆盖度量测量信号中的每一个确定多个重叠估计使用多个覆盖算法，生成多个覆盖估计分布，以及利用所生成的多个覆盖估计分布生成第一多个质量度量，其中每个质量度量对应于所生成的多个覆盖估计分布的一个覆盖估计分布每个质量度量是对应的生成的重叠估计分布的宽度的函数，每个质量度量还是来自相关度量目标的覆盖度量测量信号中存在的不对称的函数。

2. 发明申请

WO2012015967A3 METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES 审中-公开
标题翻译：用于提供处理工具可纠正的方法和系统
公开(公告)号：WO2012015967A3
公开(公告)日：2012-05-24
申请号：PCT/US2011045603
申请日：2011-07-27
申请人： KLA TENCOR CORP , COHEN GUY , KLEIN DANA , IZIKSON PAVEL
发明人： COHEN GUY , KLEIN DANA , IZIKSON PAVEL
IPC分类号： H01L21/02 , H01L21/027 , H01L21/66
CPC分类号： G05B19/41875 , G05B2219/32182 , Y02P90/22
摘要： The present invention may include performing a first measurement process on a wafer of a lot of wafers, wherein the first measurement process includes measuring one or more characteristics of a plurality of targets distributed across one or more fields of the wafer, determining a set of process tool correctables for a residual larger than a selected threshold level utilizing a loss function, wherein the loss function is configured to fit a model for one or more process tools, as a function of field position, to one or more of the measured characteristics of the plurality of targets, wherein the set of process tool correctables includes one or more parameters of the model that act to minimize the difference between a norm of the residual and the selected threshold, and utilizing the determined process tool correctables to monitor or adjust one or more processes of the process tools.
摘要翻译：本发明可以包括在许多晶片的晶片上执行第一测量过程，其中第一测量过程包括测量分布在晶片的一个或多个场上的多个目标的一个或多个特性，确定一组过程用于利用损失函数对于大于所选阈值水平的残差的工具可校正，其中，所述损失函数被配置为将一个或多个处理工具的模型作为场位置的函数拟合至所述测量特征中的一个或多个测量特征多个目标，其中所述一组处理工具可校正包括所述模型的一个或多个参数，所述一个或多个参数用于最小化所述残差的标准与所选阈值之间的差异，并且利用所确定的处理工具可校正来监视或调整一个或多个流程工具的流程。

3. 发明申请

WO2012015967A2 METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES 审中-公开
标题翻译：提供过程工具修正的方法和系统
公开(公告)号：WO2012015967A2
公开(公告)日：2012-02-02
申请号：PCT/US2011/045603
申请日：2011-07-27
申请人： KLA-TENCOR CORPORATION , COHEN, Guy , KLEIN, Dana , IZIKSON, Pavel
发明人： COHEN, Guy , KLEIN, Dana , IZIKSON, Pavel
IPC分类号： H01L21/02 , H01L21/027 , H01L21/66
CPC分类号： G05B19/41875 , G05B2219/32182 , Y02P90/22
摘要： The present invention may include performing a first measurement process on a wafer of a lot of wafers, wherein the first measurement process includes measuring one or more characteristics of a plurality of targets distributed across one or more fields of the wafer, determining a set of process tool correctables for a residual larger than a selected threshold level utilizing a loss function, wherein the loss function is configured to fit a model for one or more process tools, as a function of field position, to one or more of the measured characteristics of the plurality of targets, wherein the set of process tool correctables includes one or more parameters of the model that act to minimize the difference between a norm of the residual and the selected threshold, and utilizing the determined process tool correctables to monitor or adjust one or more processes of the process tools.
摘要翻译：本发明可以包括在许多晶片的晶片上执行第一测量过程，其中第一测量过程包括测量分布在晶片的一个或多个场上的多个目标的一个或多个特性，确定一组过程用于利用损失函数对大于所选阈值的残差的工具进行校正，其中所述损失函数被配置为将作为场位置的函数的一个或多个处理工具的模型拟合到一个或多个所测量的特征多个目标，其中所述一组过程工具可校正包括模型的一个或多个参数，其用于最小化残差范数与所选择的阈值之间的差异，以及利用所确定的过程工具可校正来监视或调整一个或多个流程工具的流程。

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