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1. 发明授权

US07416989B1 Adsorption based material removal process 有权
标题翻译：基于吸附材料去除工艺
公开(公告)号：US07416989B1
公开(公告)日：2008-08-26
申请号：US11479812
申请日：2006-06-30
申请人： Xinye Liu , Joshua Collins , Kaihan A. Ashtiani
发明人： Xinye Liu , Joshua Collins , Kaihan A. Ashtiani
IPC分类号： H01L21/302
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/6708
摘要： Methods for accurate and conformal removal of atomic layers of materials make use of the self-limiting nature of adsorption of at least one reactant on the substrate surface. In certain embodiments, a first reactant is introduced to the substrate in step (a) and is adsorbed on the substrate surface until the surface is partially or fully saturated. A second reactant is then added in step (b), reacting with the adsorbed layer of the first reactant to form an etchant. The amount of an etchant, and, consequently, the amount of etched material is limited by the amount of adsorbed first reactant. By repeating steps (a) and (b), controlled atomic-scale etching of material is achieved. These methods may be used in interconnect pre-clean applications, gate dielectric processing, manufacturing of memory devices, or any other applications where removal of one or multiple atomic layers of material is desired.
摘要翻译：用于精确和共形去除材料原子层的方法利用在衬底表面上吸附至少一种反应物的自限性质。在某些实施方案中，在步骤（a）中将第一反应物引入基质中，并且被吸附在基底表面上直到表面部分或完全饱和。然后在步骤（b）中加入第二反应物，与第一反应物的吸附层反应形成蚀刻剂。蚀刻剂的量以及因此的蚀刻材料的量受到第一反应物吸附量的限制。通过重复步骤（a）和（b），实现了材料的受控原子尺度蚀刻。这些方法可以用于互连预清洁应用，栅介质处理，存储器件的制造，或者期望去除一个或多个原子层材料的任何其它应用。

2. 发明授权

US08043972B1 Adsorption based material removal process 有权
标题翻译：基于吸附材料去除工艺
公开(公告)号：US08043972B1
公开(公告)日：2011-10-25
申请号：US12174402
申请日：2008-07-16
申请人： Xinye Liu , Joshua Collins , Kaihan A. Ashtiani
发明人： Xinye Liu , Joshua Collins , Kaihan A. Ashtiani
IPC分类号： H01L21/302
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/6708
摘要： Methods for accurate and conformal removal of atomic layers of materials make use of the self-limiting nature of adsorption of at least one reactant on the substrate surface. In certain embodiments, a first reactant is introduced to the substrate in step (a) and is adsorbed on the substrate surface until the surface is partially or fully saturated. A second reactant is then added in step (b), reacting with the adsorbed layer of the first reactant to form an etchant. The amount of an etchant, and, consequently, the amount of etched material is limited by the amount of adsorbed first reactant. By repeating steps (a) and (b), controlled atomic-scale etching of material is achieved. These methods may be used in interconnect pre-clean applications, gate dielectric processing, manufacturing of memory devices, or any other applications where removal of one or multiple atomic layers of material is desired.
摘要翻译：用于精确和共形去除材料原子层的方法利用在衬底表面上吸附至少一种反应物的自限性质。在某些实施方案中，在步骤（a）中将第一反应物引入基质中，并且被吸附在基底表面上直到表面部分或完全饱和。然后在步骤（b）中加入第二反应物，与第一反应物的吸附层反应形成蚀刻剂。蚀刻剂的量以及因此的蚀刻材料的量受到第一反应物吸附量的限制。通过重复步骤（a）和（b），实现了材料的受控原子尺度蚀刻。这些方法可以用于互连预清洁应用，栅介质处理，存储器件的制造，或者期望去除一个或多个原子层材料的任何其它应用。

3. 发明申请

US20050016956A1 Methods and apparatus for cycle time improvements for atomic layer deposition 审中-公开
标题翻译：用于原子层沉积的循环时间改进的方法和装置
公开(公告)号：US20050016956A1
公开(公告)日：2005-01-27
申请号：US10791030
申请日：2004-03-01
申请人： Xinye Liu , Thomas Seidel , Edward Lee , Ken Doering , Sasangan Ramanathan
发明人： Xinye Liu , Thomas Seidel , Edward Lee , Ken Doering , Sasangan Ramanathan
IPC分类号： C23C16/44 , C23C16/455 , C23F1/00 , C30B25/14
CPC分类号： C30B25/14 , C23C16/4412 , C23C16/45527 , C23C16/45544 , C23C16/45557
摘要： Different periods of an ALD cycle are performed using different purge flows and, in some cases, different pumping capacities, while maintaining the reactor chamber at a nominally constant pressure. The purge flows may, in some cases, utilize different gasses and/or may be provided through different flow paths. These operations provide for ALD cycle time improvements and economical operation with respect to consumables usage. In some embodiments the use of an annular throttle valve provides a means for controlling downstream flow limiting conductances in a gas flow path from the reactor chamber.
摘要翻译：不同的ALD循环周期使用不同的吹扫流程，并且在一些情况下，不同的泵送能力，同时将反应器室保持在标称恒定的压力下进行。在一些情况下，吹扫流可以利用不同的气体和/或可以通过不同的流动路径提供。这些操作提供ALD循环时间改进和耗材使用的经济运行。在一些实施例中，环形节流阀的使用提供了用于控制来自反应器室的气体流动路径中的下游流动限制电导的装置。

4. 发明授权

US6037003A Chemical vapor deposition of aluminum oxide 有权
标题翻译：化学气相沉积氧化铝
公开(公告)号：US6037003A
公开(公告)日：2000-03-14
申请号：US284526
申请日：1999-06-11
申请人： Roy Gordon , Keith Kramer , Xinye Liu
发明人： Roy Gordon , Keith Kramer , Xinye Liu
IPC分类号： C23C16/40
CPC分类号： C23C16/403
摘要： An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.
摘要翻译： PCT No.PCT / US97 / 18576 Sec。 371日期1999年6月11日第 102（e）日期1999年6月11日PCT 1997年10月15日PCT公布。第WO98 / 16667号公报日期1998年4月23日氧化铝膜通过CVD由一种或多种具有组成为RnAl 2（OR'）6-n的烷基铝烷氧化物化合物沉积在加热的衬底上，其中R和R'是烷基，n在 1〜5。

5. 发明授权

US08187486B1 Modulating etch selectivity and etch rate of silicon nitride thin films 有权
标题翻译：调制氮化硅薄膜的蚀刻选择性和蚀刻速率
公开(公告)号：US08187486B1
公开(公告)日：2012-05-29
申请号：US12002085
申请日：2007-12-13
申请人： Xinye Liu , Chiukin Steven Lai
发明人： Xinye Liu , Chiukin Steven Lai
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00
CPC分类号： C23F1/08 , H01L21/0206 , H01L21/02063 , H01L21/31116 , H01L21/67069 , H01L21/76229 , H01L21/76814 , H01L21/76837
摘要： Etching of nitride and oxide layers with reactant gases is modulated by etching in different process regimes. High etch selectivity to silicon nitride is achieved in an adsorption regime where the partial pressure of the etchant is lower than its vapor pressure. Low etch selectivity to silicon nitride is achieved in a condensation regime where the partial pressure of the etchant is higher than its vapor pressure. By controlling partial pressure of the etchant, very high etch selectivity to silicon nitride may be achieved.
摘要翻译：用反应气体蚀刻氮化物和氧化物层是通过不同工艺制程的蚀刻来调节的。在其中蚀刻剂的分压低于其蒸汽压力的吸附方案中实现了对氮化硅的高蚀刻选择性。在其中腐蚀剂的分压高于其蒸汽压力的冷凝方案中实现对氮化硅的低蚀刻选择性。通过控制蚀刻剂的分压，可以实现对氮化硅的非常高的蚀刻选择性。

6. 发明授权

US08617348B1 Modulating etch selectivity and etch rate of silicon nitride thin films 有权
标题翻译：调制氮化硅薄膜的蚀刻选择性和蚀刻速率
公开(公告)号：US08617348B1
公开(公告)日：2013-12-31
申请号：US13461080
申请日：2012-05-01
申请人： Xinye Liu , Chiukin Steven Lai
发明人： Xinye Liu , Chiukin Steven Lai
IPC分类号： C23F1/08 , H01L21/306 , H01L21/67
CPC分类号： C23F1/08 , H01L21/0206 , H01L21/02063 , H01L21/31116 , H01L21/67069 , H01L21/76229 , H01L21/76814 , H01L21/76837
摘要： Etching of nitride and oxide layers with reactant gases is modulated by etching in different process regimes. High etch selectivity to silicon nitride is achieved in an adsorption regime where the partial pressure of the etchant is lower than its vapor pressure. Low etch selectivity to silicon nitride is achieved in a condensation regime where the partial pressure of the etchant is higher than its vapor pressure. By controlling partial pressure of the etchant, very high etch selectivity to silicon nitride may be achieved.
摘要翻译：用反应气体蚀刻氮化物和氧化物层是通过不同工艺制程的蚀刻来调节的。在其中蚀刻剂的分压低于其蒸汽压力的吸附方案中实现了对氮化硅的高蚀刻选择性。在其中腐蚀剂的分压高于其蒸汽压力的冷凝方案中实现对氮化硅的低蚀刻选择性。通过控制蚀刻剂的分压，可以实现对氮化硅的非常高的蚀刻选择性。

7. 发明授权

US07977249B1 Methods for removing silicon nitride and other materials during fabrication of contacts 有权
标题翻译：在触点制造过程中去除氮化硅和其他材料的方法
公开(公告)号：US07977249B1
公开(公告)日：2011-07-12
申请号：US12074912
申请日：2008-03-07
申请人： Xinye Liu , Yu Yang , Chiukin Steven Lai
发明人： Xinye Liu , Yu Yang , Chiukin Steven Lai
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/31111 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76834
摘要： Methods for removing silicon nitride and elemental silicon during contact preclean process involve converting these materials to materials that are more readily etched by fluoride-based etching methods, and subsequently removing the converted materials by a fluoride-based etch. Specifically, silicon nitride and elemental silicon may be treated with an oxidizing agent, e.g., with an oxygen-containing gas in a plasma, or with O2 or O3 in the absence of plasma to produce a material that is more rich in Si—O bonds and is more easily etched with a fluoride-based etch. Alternatively, silicon nitride or elemental silicon may be doped with a number of doping elements, e.g., hydrogen, to form materials which are more easily etched by fluoride based etches. The methods are particularly useful for pre-cleaning contact vias residing in a layer of silicon oxide based material because they minimize the unwanted increase of critical dimension of contact vias.
摘要翻译：在接触预清洗过程中去除氮化硅和元素硅的方法包括将这些材料转化为通过基于氟化物的蚀刻方法更容易蚀刻的材料，并且随后通过基于氟化物的蚀刻除去转化的材料。具体地说，氮化硅和元素硅可以用氧化剂处理，例如在等离子体中含有氧的气体，或者在没有等离子体的情况下用O 2或O 3处理，以产生更富含Si-O键的材料并且更容易用基于氟化物的蚀刻蚀刻。或者，氮化硅或元素硅可以掺杂多个掺杂元素，例如氢，以形成更容易被基于氟化物的蚀刻蚀刻的材料。这些方法对于预清洁驻留在氧化硅基材料层中的接触通孔特别有用，因为它们使接触通孔的临界尺寸的不期望的增加最小化。

8. 发明申请

US20070042119A1 Vaporizer for atomic layer deposition system 审中-公开
标题翻译：蒸发器用于原子层沉积系统
公开(公告)号：US20070042119A1
公开(公告)日：2007-02-22
申请号：US11351366
申请日：2006-02-10
申请人： Larry Matthysse , Xinye Liu , M. Karim , Thomas Seidel
发明人： Larry Matthysse , Xinye Liu , M. Karim , Thomas Seidel
IPC分类号： C23C16/00
CPC分类号： C23C16/4481 , C23C16/45525 , C23C16/45544
摘要： A multi-stage precursor vessel system for an atomic layer deposition (ALD) system in which a precursor is transferred from a first, low temperature reservoir chamber into a second (or subsequent) chamber at higher temperature, which second (or subsequent) chamber is used to create a highest possible vapor pressure of the precursor allowed by its temperature without decomposition in the timeframe of its residence therein.
摘要翻译：一种用于原子层沉积（ALD）系统的多级前体容器系统，其中前体在较高温度下从第一低温储存室转移到第二（或后续）室中，该第二（或后续）室是用于产生其温度允许的前体的最高可能的蒸汽压，而不会在其驻留的时间内分解。

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