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    • 1. 发明授权
    • Methods for removing silicon nitride and other materials during fabrication of contacts
    • 在触点制造过程中去除氮化硅和其他材料的方法
    • US07977249B1
    • 2011-07-12
    • US12074912
    • 2008-03-07
    • Xinye LiuYu YangChiukin Steven Lai
    • Xinye LiuYu YangChiukin Steven Lai
    • H01L21/302H01L21/461
    • H01L21/31116H01L21/31111H01L21/76814H01L21/76825H01L21/76826H01L21/76834
    • Methods for removing silicon nitride and elemental silicon during contact preclean process involve converting these materials to materials that are more readily etched by fluoride-based etching methods, and subsequently removing the converted materials by a fluoride-based etch. Specifically, silicon nitride and elemental silicon may be treated with an oxidizing agent, e.g., with an oxygen-containing gas in a plasma, or with O2 or O3 in the absence of plasma to produce a material that is more rich in Si—O bonds and is more easily etched with a fluoride-based etch. Alternatively, silicon nitride or elemental silicon may be doped with a number of doping elements, e.g., hydrogen, to form materials which are more easily etched by fluoride based etches. The methods are particularly useful for pre-cleaning contact vias residing in a layer of silicon oxide based material because they minimize the unwanted increase of critical dimension of contact vias.
    • 在接触预清洗过程中去除氮化硅和元素硅的方法包括将这些材料转化为通过基于氟化物的蚀刻方法更容易蚀刻的材料,并且随后通过基于氟化物的蚀刻除去转化的材料。 具体地说,氮化硅和元素硅可以用氧化剂处理,例如在等离子体中含有氧的气体,或者在没有等离子体的情况下用O 2或O 3处理,以产生更富含Si-O键的材料 并且更容易用基于氟化物的蚀刻蚀刻。 或者,氮化硅或元素硅可以掺杂多个掺杂元素,例如氢,以形成更容易被基于氟化物的蚀刻蚀刻的材料。 这些方法对于预清洁驻留在氧化硅基材料层中的接触通孔特别有用,因为它们使接触通孔的临界尺寸的不期望的增加最小化。
    • 4. 发明申请
    • Method and Arrangement for Acquiring Scheduling Information
    • 获取计划信息的方法和安排
    • US20150208435A1
    • 2015-07-23
    • US14417363
    • 2012-08-01
    • Huaisong ZhuYu YangLuSheng Yu
    • Huaisong ZhuYu YangLuSheng Yu
    • H04W72/12H04L5/14H04W72/04
    • H04W72/1268H04L5/14H04W72/042H04W72/1289H04W92/20
    • A method executed in a first radio base station located in a first cell is provided for acquiring scheduling information associated with a second radio base station located in a neighboring cell, where the method comprises listening, via an air interface, to scheduling information transmitted, via a downlink control channel, from the second radio base station; decoding the received scheduling information, and providing the decoded scheduling information to an uplink receiver and/or uplink scheduler associated with the radio base station, such that the uplink receiver and/or uplink scheduler will be able to enhance its performance on the basis of the received scheduling information. An arrangement for executing the suggested method is also provided.
    • 提供了一种在位于第一小区中的第一无线电基站中执行的方法,用于获取与位于相邻小区中的第二无线电基站相关联的调度信息,其中所述方法包括:经由空中接口,经由 下行链路控制信道; 对所接收的调度信息进行解码,以及将解码的调度信息提供给与无线电基站相关联的上行链路接收机和/或上行链路调度器,使得上行链路接收机和/或上行链路调度器将能够基于 收到调度信息。 还提供了用于执行所提出的方法的装置。
    • 5. 发明申请
    • METHOD AND DEVICE FOR DETERMINING AVAILABLE SPECTRUMS
    • 用于确定可用光谱的方法和装置
    • US20150163080A1
    • 2015-06-11
    • US14239223
    • 2012-08-10
    • Yuanyuan LiYeming TangWenling BaiChenggang JiangYu YangXiaolu WangXin Tong
    • Yuanyuan LiYeming TangWenling BaiChenggang JiangYu YangXiaolu WangXin Tong
    • H04L27/00H04W16/14
    • H04L27/0006H04W16/14
    • A method and device for determining available spectrums is disclosed in embodiments of the present invention. By applying the technical solution of the embodiments of the present invention, with consideration on the bi-directionality of the interference between wireless communication systems, when introduction of the cognitive system is required, the corresponding frequency will be determined as an available frequency only in the case the incumbent system and the cognitive system can be simultaneously guaranteed to meet the corresponding coexistence criterion among the corresponding frequency and adjacent frequencies thereof, thus ensuring that the determined available frequency band guarantees that the normal operation of the incumbent system is not interfered by the cognitive system while ensuring that the newly-introduced cognitive system can also operate normally without interference of the incumbent system, thereby improving the communication quality of the wireless communication systems.
    • 在本发明的实施例中公开了一种用于确定可用频谱的方法和装置。 通过应用本发明的实施例的技术方案,考虑到无线通信系统之间的干扰的双向性,当需要引入认知系统时,相应的频率将仅被确定为可用频率 可以同时保证现有系统和认知系统在相应的频率和相邻频率之间达到相应的共存标准,从而确保确定的可用频带保证现有系统的正常运行不受认知干扰 系统,同时确保新引入的认知系统也可以正常工作而不受现任系统的干扰,从而提高无线通信系统的通信质量。
    • 7. 发明授权
    • Method and arrangement in wireless communications network
    • 无线通信网络中的方法和布置
    • US08948759B2
    • 2015-02-03
    • US13255028
    • 2009-03-23
    • Konstantinos DimouYu Yang
    • Konstantinos DimouYu Yang
    • H04W36/00H04W28/06
    • H04W36/0083H04W28/06
    • A method in a wireless terminal (110) for sending a measurement report to a serving base station (130) before handover is provided. The wireless terminal (110) and the base station (130) are comprised in a cell in a wireless communications system. The wireless terminal (110) is arranged to use a standard size message or a reduced size message for sending a measurement report before a handover. The wireless terminal (110) obtains (601) information about the cell size and/or the system load. When the cell size exceeds a predetermined value or when the system load exceeds a predetermined value, the wireless terminal (110) sends (605) a measurement report to the base station (130), using the reduced size message.
    • 提供了一种用于在切换之前向服务基站(130)发送测量报告的无线终端(110)中的方法。 无线终端(110)和基站(130)包括在无线通信系统中的小区中。 无线终端(110)被安排为在切换之前使用标准尺寸消息或缩小尺寸的消息来发送测量报告。 无线终端(110)获得关于小区大小和/或系统负载的信息(601)。 当小区大小超过预定值时,或者当系统负载超过预定值时,无线终端(110)使用缩小尺寸的消息向基站(130)发送测量报告(605)(605)。
    • 9. 发明授权
    • Process for preparing shelf-stable curable polysilazanes, and polysilazanes prepared thereby
    • 制备稳定的可固化聚硅氮烷的方法和由此制备的聚硅氮烷
    • US08802805B2
    • 2014-08-12
    • US13515333
    • 2010-12-16
    • Yu YangGeorge G. I. Moore
    • Yu YangGeorge G. I. Moore
    • C08G77/26C08G77/62
    • C08G77/62
    • A process for preparing curable oligomeric and/or polymeric polysilazanes comprises (a) forming at least one dihalosilane-base adduct by reacting at least one dihalosilane with at least one base; (b) optionally, combining at least one dihalosilane-base adduct and at least one organodihalosilane; and (c) carrying out ammonolysis of at least one dihalosilane-base adduct or of the resulting combination of at least one dihalosilane-base adduct and at least one organodihalosilane; with the proviso that the base (1) is used for the dihalosilane-base adduct formation in a limited amount that is less than or equal to twice the stoichiometric amount of silicon-halogen bonds in the dihalosilane or (2) is used for the dihalosilane-base adduct formation in excess of this limited amount and, prior to the ammonolysis, the total amount of the resulting reacted and unreacted base is reduced to no more than this limited amount.
    • 制备可固化低聚和/或聚合聚硅氮烷的方法包括(a)通过使至少一种二卤硅烷与至少一个碱反应形成至少一种二卤代硅烷基加合物; (b)任选地,组合至少一种二卤代硅烷基加合物和至少一种有机二卤硅烷; 和(c)进行至少一种二卤硅烷基加合物的氨解或至少一种二卤代硅烷基加合物和至少一种有机二卤代硅烷的组合; 条件是碱(1)用于二卤代硅烷加合物形成,其限制量小于或等于二卤代硅烷中的硅 - 卤键的化学计量量的两倍,或(2)用于二卤代硅烷 - 碱加合物形成超过该有限量,并且在氨解之前,所得到的反应和未反应碱的总量减少到不超过该限制量。
    • 10. 发明授权
    • Inline method to monitor ONO stack quality
    • 监控ONO堆栈质量的内联方法
    • US08772059B2
    • 2014-07-08
    • US13430631
    • 2012-03-26
    • Yu YangKrishnaswamy Ramkumar
    • Yu YangKrishnaswamy Ramkumar
    • H01L21/66
    • H01L29/792H01L22/14H01L29/66833
    • Embodiments of structures and methods for determining operating characteristics of a non-volatile memory transistor comprising a charge-storage-layer and a tunneling-layer are described. In one embodiment, the method comprises: forming on a substrate a structure including a nitrided tunneling-layer and a charge-storage-layer overlying the tunneling-layer comprising a first charge-storage layer adjacent to the tunneling-layer, and a second charge-storage layer overlying the first charge-storage layer, wherein the first charge-storage layer is separated from the second charge-storage layer by a anti-tunneling layer comprising an oxide; depositing a positive charge on the charge-storage-layer and determining a first voltage to establish a first leakage current through the charge-storage-layer and the tunneling-layer; depositing a negative charge on the charge-storage-layer and determining a second voltage to establish a second leakage current through the charge-storage-layer and the tunneling-layer; and determining a differential voltage by calculating a difference between the first and second voltages.
    • 描述了用于确定包括电荷存储层和隧穿层的非易失性存储晶体管的操作特性的结构和方法的实施例。 在一个实施例中,该方法包括:在衬底上形成包括氮化隧道层和覆盖隧道层的电荷存储层的结构,该隧穿层包括与隧道层相邻的第一电荷存储层和第二电荷 覆盖在第一电荷存储层上的第一电荷存储层,其中第一电荷存储层通过包含氧化物的反隧道层与第二电荷存储层分离; 在电荷存储层上沉积正电荷并确定第一电压以建立通过电荷存储层和隧道层的第一泄漏电流; 在电荷存储层上沉积负电荷并确定第二电压以建立通过电荷存储层和隧穿层的第二泄漏电流; 以及通过计算所述第一和第二电压之间的差来确定差分电压。