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1. 发明授权

US07709178B2 Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride 有权
标题翻译：不含氮化硅的硅湿蚀刻用耐碱性负性光致抗蚀剂
公开(公告)号：US07709178B2
公开(公告)日：2010-05-04
申请号：US11736429
申请日：2007-04-17
申请人： Xing-Fu Zhong , Tony D. Flaim , Jyoti Malhotra
发明人： Xing-Fu Zhong , Tony D. Flaim , Jyoti Malhotra
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0752 , G03F7/0045 , G03F7/0382 , G03F7/0751 , Y10S430/108 , Y10S430/115
摘要： New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
摘要翻译：提供了在制造半导体和MEMS器件期间使用的新型光致抗蚀剂。底漆层优选包含溶解或分散在溶剂体系中的硅烷。光致抗蚀剂层包括由苯乙烯和丙烯腈制备的第一聚合物和包含含环氧单体（优选含酚单体）的第二聚合物。光致抗蚀剂层包括光致酸发生剂，并且优选为负性作用。

2. 发明申请

US20080261145A1 ALKALINE-RESISTANT NEGATIVE PHOTORESIST FOR SILICON WET-ETCH WITHOUT SILICON NITRIDE 有权
标题翻译：无硅氮氧化物的硅氧化锌耐碱性负离子
公开(公告)号：US20080261145A1
公开(公告)日：2008-10-23
申请号：US11736429
申请日：2007-04-17
申请人： Xing-Fu Zhong , Tony D. Flaim , Jyoti Malhotra
发明人： Xing-Fu Zhong , Tony D. Flaim , Jyoti Malhotra
IPC分类号： G03C1/043 , G03C5/00
CPC分类号： G03F7/0752 , G03F7/0045 , G03F7/0382 , G03F7/0751 , Y10S430/108 , Y10S430/115
摘要： New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
摘要翻译：提供了在制造半导体和MEMS器件期间使用的新型光致抗蚀剂。底漆层优选包含溶解或分散在溶剂体系中的硅烷。光致抗蚀剂层包括由苯乙烯和丙烯腈制备的第一聚合物，以及包含含环氧单体（优选含酚单体）的第二聚合物。光致抗蚀剂层包括光致酸发生剂，并且优选为负性作用。

3. 发明授权

US09263314B2 Multiple bonding layers for thin-wafer handling 有权
公开(公告)号：US09263314B2
公开(公告)日：2016-02-16
申请号：US13198294
申请日：2011-08-04
申请人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
发明人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
IPC分类号： H01L21/00 , H01L21/683 , H01L21/20 , H01L23/00 , B32B38/00 , B32B38/10 , B32B43/00
CPC分类号： H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
摘要： Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

4. 发明申请

US20140162034A2 MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING 有权
公开(公告)号：US20140162034A2
公开(公告)日：2014-06-12
申请号：US13198294
申请日：2011-08-04
申请人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
发明人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
IPC分类号： B32B27/32 , B32B7/02 , B32B27/40 , B32B27/36 , B32B27/00 , H01L21/30 , B32B27/38
CPC分类号： H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
摘要： Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

5. 发明申请

US20120034437A1 MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING 有权
标题翻译：多层结合层用于薄膜处理
公开(公告)号：US20120034437A1
公开(公告)日：2012-02-09
申请号：US13198294
申请日：2011-08-04
申请人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
发明人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
IPC分类号： B32B27/32 , B32B7/02 , B32B27/40 , B32B27/36 , B32B27/00 , H01L21/30 , B32B27/38
CPC分类号： H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
摘要： Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.
摘要翻译：提供临时连接半导体衬底的多个结合层方案。在本发明的接合方案中，至少一个层直接与半导体衬底接触，且该方案中的至少两个层彼此直接接触。本发明提供了多个处理选择，因为多层结构内的不同层执行特定的功能。更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装保护晶片正面的凸块，在脱粘步骤中降低应力和减少剥离步骤来提高薄晶片处理解决方案的性能正面的缺陷。

6. 发明申请

US20110171478A1 ACID-ETCH RESISTANT, PROTECTIVE COATINGS 有权
标题翻译：防酸涂层，防护涂料
公开(公告)号：US20110171478A1
公开(公告)日：2011-07-14
申请号：US12718516
申请日：2010-03-05
申请人： Tingji Tang , Gu Xu , Xing-Fu Zhong , Wenbin Hong , Tony D. Flaim , Kimberly Yess , Ramachandran K. Trichur
发明人： Tingji Tang , Gu Xu , Xing-Fu Zhong , Wenbin Hong , Tony D. Flaim , Kimberly Yess , Ramachandran K. Trichur
IPC分类号： C09D145/00 , B32B13/12 , B32B15/08 , B32B27/00 , B32B27/08 , B32B17/10 , G03F7/20 , G03F7/004 , H05K13/00
CPC分类号： B81C1/00801 , B81C2201/053 , C08G61/08 , C08G2261/3324 , C08G2261/418 , G03F7/033 , G03F7/094 , H01L21/0274 , H01L21/3081 , Y10T428/31645 , Y10T428/31667 , Y10T428/31692 , Y10T428/31855 , Y10T428/31909
摘要： New compositions and methods of using those compositions as protective layers during the production of semiconductor and MEMS devices are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to form layers that protect a substrate during acid etching and other processing and handling. The protective layer can be photosensitive or non-photosensitive, and can be used with or without a primer layer beneath the protective layer. Preferred primer layers comprise a basic polymer in a solvent system.
摘要翻译：提供了在制造半导体和MEMS器件期间使用这些组合物作为保护层的新组合物和方法。组合物包含分散或溶解在溶剂体系中的环烯烃共聚物，并且可以用于在酸蚀刻和其它加工和处理期间形成保护基材的层。保护层可以是光敏的或非感光的，并且可以在保护层下面使用或不使用底漆层。优选的底漆层在溶剂体系中包含碱性聚合物。

7. 发明授权

US08771927B2 Acid-etch resistant, protective coatings 有权
标题翻译：耐酸蚀，保护涂层
公开(公告)号：US08771927B2
公开(公告)日：2014-07-08
申请号：US12718516
申请日：2010-03-05
申请人： Tingji Tang , Gu Xu , Xing-Fu Zhong , Wenbin Hong , Tony D. Flaim , Kimberly Yess , Ramachandran K. Trichur
发明人： Tingji Tang , Gu Xu , Xing-Fu Zhong , Wenbin Hong , Tony D. Flaim , Kimberly Yess , Ramachandran K. Trichur
IPC分类号： G03F7/26
CPC分类号： B81C1/00801 , B81C2201/053 , C08G61/08 , C08G2261/3324 , C08G2261/418 , G03F7/033 , G03F7/094 , H01L21/0274 , H01L21/3081 , Y10T428/31645 , Y10T428/31667 , Y10T428/31692 , Y10T428/31855 , Y10T428/31909
摘要： New compositions and methods of using those compositions as protective layers during the production of semiconductor and MEMS devices are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to form layers that protect a substrate during acid etching and other processing and handling. The protective layer can be photosensitive or non-photosensitive, and can be used with or without a primer layer beneath the protective layer. Preferred primer layers comprise a basic polymer in a solvent system.
摘要翻译：提供了在制造半导体和MEMS器件期间使用这些组合物作为保护层的新组合物和方法。组合物包含分散或溶解在溶剂体系中的环烯烃共聚物，并且可以用于在酸蚀刻和其它加工和处理期间形成保护基材的层。保护层可以是光敏的或非感光的，并且可以在保护层下面使用或不使用底漆层。优选的底漆层在溶剂体系中包含碱性聚合物。

8. 发明授权

US09099512B2 Article including a device wafer reversibly mountable to a carrier substrate 有权
标题翻译：本文包括可逆地安装到载体衬底的器件晶片
公开(公告)号：US09099512B2
公开(公告)日：2015-08-04
申请号：US12951530
申请日：2010-11-22
申请人： Tony D. Flaim , Jeremy McCutcheon
发明人： Tony D. Flaim , Jeremy McCutcheon
IPC分类号： H01L23/48 , H01L23/52 , H01L29/06 , H01L21/683
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , H01L2924/19041 , Y10T428/31678 , H01L2924/00
摘要： New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process.
摘要翻译：提供了从这些方法形成的新的临时粘合方法和制品。这些方法包括仅在其外周界处将器件晶片结合到载体晶片或衬底，以便在随后的处理和处理期间有助于保护器件晶片及其器件位置。通过该方法形成的边缘粘合是化学和耐热的，但也可以被软化，溶解或机械破坏，以允许晶片在非常低的力和在室温下或在室温下在制造过程中的适当阶段容易地分离。

9. 发明授权

US08808969B2 Method of making radiation-sensitive sol-gel materials 有权
标题翻译：制造辐射敏感溶胶凝胶材料的方法
公开(公告)号：US08808969B2
公开(公告)日：2014-08-19
申请号：US13443533
申请日：2012-04-10
申请人： Qin Lin , Yubao Wang , Tony D. Flaim
发明人： Qin Lin , Yubao Wang , Tony D. Flaim
IPC分类号： G03F7/26 , G03F7/075 , G03F7/20
CPC分类号： G03F7/075 , G03F7/0045 , G03F7/038 , G03F7/0757 , G03F7/11 , G03F7/20
摘要： Radiation-sensitive sol-gel compositions are provided, along with methods of forming microelectronic structures and the structures thus formed. The compositions comprise a sol-gel compound and a base generator dispersed or dissolved in a solvent system. The sol-gel compound comprises recurring monomeric units comprising silicon with crosslinkable moieties bonded to the silicon. Upon exposure to radiation, the base generator generates a strong base, which crosslinks the sol-gel compound in the compositions to yield a crosslinked layer that is insoluble in developers or solvents. The unexposed portions of the layer can be removed to yield a patterned sol-gel layer. The invention can be used to form patterns from sol-gel materials comprising features having feature sizes of less than about 1 μm.
摘要翻译：提供了辐射敏感的溶胶 - 凝胶组合物，以及形成微电子结构和如此形成的结构的方法。组合物包含分散或溶解在溶剂体系中的溶胶 - 凝胶化合物和碱产生剂。溶胶 - 凝胶化合物包括具有与硅结合的可交联部分的包含硅的重复单体单元。暴露于辐射后，基底发生器产生强碱，其使组合物中的溶胶 - 凝胶化合物交联，得到不溶于显影剂或溶剂的交联层。可以除去该层的未曝光部分以产生图案化的溶胶 - 凝胶层。本发明可用于形成包含特征尺寸小于约1μm的特征的溶胶 - 凝胶材料的图案。

10. 发明授权

US08202442B2 Spin-on protective coatings for wet-etch processing of microelectronic substrates 有权
标题翻译：用于微电子衬底的湿法蚀刻加工的旋涂保护涂层
公开(公告)号：US08202442B2
公开(公告)日：2012-06-19
申请号：US11856552
申请日：2007-09-17
申请人： Chenghong Li , Kimberly A. Yess , Tony D. Flaim
发明人： Chenghong Li , Kimberly A. Yess , Tony D. Flaim
IPC分类号： C03C15/00 , C03C25/68 , H01B13/00 , C23F1/00 , H01L21/31
CPC分类号： B81C1/00539 , C03C15/00 , C03C2218/355 , C09D125/12 , H01L21/3081 , H01L21/31144 , Y10T428/265 , Y10T428/3154 , Y10T428/31544 , Y10T428/31612 , Y10T428/31663 , Y10T428/31678 , Y10T428/31935
摘要： New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and optionally other addition-polymerizable monomers such as (meth)acrylate monomers, vinylbenzyl chloride, and diesters of maleic acid or fumaric acid. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.
摘要翻译：提供了在制造半导体和MEMS器件期间用于湿蚀刻工艺的新的保护涂层。这些层包括底漆层，第一保护层和任选的第二保护层。底漆层优选在溶剂体系中包含有机硅烷化合物。第一保护层包括由苯乙烯，丙烯腈和任选的其它加成聚合单体如（甲基）丙烯酸酯单体，乙烯基苄基氯和马来酸或富马酸的二酯制备的热塑性共聚物。第二保护层包括高度卤化的聚合物，例如氯化聚合物，其在加热时可以或不会交联。

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