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1. 发明授权

US09377286B2 Device for globally measuring thickness of metal film 有权
标题翻译：用于全球测量金属膜厚度的装置
公开(公告)号：US09377286B2
公开(公告)日：2016-06-28
申请号：US13985789
申请日：2011-11-17
申请人： Xinchun Lu , Dewen Zhao , Zilian Qu , Qian Zhao , Yongyong He , Yonggang Meng
发明人： Xinchun Lu , Dewen Zhao , Zilian Qu , Qian Zhao , Yongyong He , Yonggang Meng
IPC分类号： G01B7/06 , G01B1/00 , G01R1/00
CPC分类号： G01B7/10 , G01B1/00 , G01B7/105 , G01R1/00 , H01L2221/00
摘要： A device for globally measuring a thickness of a metal film (901), comprises: a base (10); a rotating unit (20) comprising a fixed member (21) fixed on the base (10) and a rotating member (22) having a rotating joint (23); a working table (50) fixed on the rotating member (22) and having a vacuum passage which is formed therein and connected with the rotating joint (23); a linear driving unit (30) including a guide rail (31) fixed on the base (10) and a sliding block (32) slidable along the guide rail (31); a cantilever beam (40) disposed horizontally and defining a first end fixed with the sliding block (32) and a second end; a measuring head (80) connected to the second end of the cantilever beam (40), facing a surface of the working table (50) and having an eddy current probe (82) disposed therein.
摘要翻译：用于全面测量金属膜（901）的厚度的装置包括：基座（10）; 旋转单元（20）包括固定在基座（10）上的固定构件（21）和具有旋转接头（23）的旋转构件（22）; 固定在旋转构件（22）上并具有形成在其中并与旋转接头（23）连接的真空通道的工作台（50）; 线性驱动单元（30），其包括固定在基座（10）上的导轨（31）和可沿导轨（31）滑动的滑块（32）; 悬臂梁（40）水平设置并且限定固定有滑块（32）的第一端和第二端; 连接到所述悬臂梁（40）的第二端的测量头（80），面向所述工作台（50）的表面并且具有布置在其中的涡流探针（82）。

2. 发明申请

US20140062468A1 DEVICE FOR GLOBALLY MEASURING THICKNESS OF METAL FILM 有权
标题翻译：用于全球测量金属薄膜厚度的装置
公开(公告)号：US20140062468A1
公开(公告)日：2014-03-06
申请号：US13985789
申请日：2011-11-17
申请人： Xinchun Lu , Dewen Zhao , Zilian Qu , Qian Zhao , Yongyong He , Yonggang Meng
发明人： Xinchun Lu , Dewen Zhao , Zilian Qu , Qian Zhao , Yongyong He , Yonggang Meng
IPC分类号： G01B7/06
CPC分类号： G01B7/10 , G01B1/00 , G01B7/105 , G01R1/00 , H01L2221/00
摘要： A device for globally measuring a thickness of a metal film (901), comprises: a base (10); a rotating unit (20) comprising a fixed member (21) fixed on the base (10) and a rotating member (22) having a rotating joint (23); a working table (50) fixed on the rotating member (22) and having a vacuum passage which is formed therein and connected with the rotating joint (23); a linear driving unit (30) including a guide rail (31) fixed on the base (10) and a sliding block (32) slidable along the guide rail (31); a cantilever beam (40) disposed horizontally and defining a first end fixed with the sliding block (32) and a second end; a measuring head (80) connected to the second end of the cantilever beam (40), facing a surface of the working table (50) and having an eddy current probe (82) disposed therein.
摘要翻译：用于全面测量金属膜（901）的厚度的装置包括：基座（10）; 旋转单元（20）包括固定在基座（10）上的固定构件（21）和具有旋转接头（23）的旋转构件（22）; 固定在旋转构件（22）上并具有形成在其中并与旋转接头（23）连接的真空通道的工作台（50）; 线性驱动单元（30），其包括固定在基座（10）上的导轨（31）和可沿导轨（31）滑动的滑块（32）; 悬臂梁（40）水平设置并且限定固定有滑块（32）的第一端和第二端; 连接到所述悬臂梁（40）的第二端的测量头（80）面向所述工作台（50）的表面并且具有布置在其中的涡流探针（82）。

3. 发明申请

US20130130601A1 CHEMICAL MECHANICAL POLISHING MACHINE AND CHEMICAL MECHANICAL POLISHING APPARATUS COMPRISING THE SAME 有权
标题翻译：化学机械抛光机及其化学机械抛光装置
公开(公告)号：US20130130601A1
公开(公告)日：2013-05-23
申请号：US13384627
申请日：2011-06-08
申请人： Xinchun Lu , Zhenjie Xu , Yongyong He , Tongqing Wang , Pan Shen , Dewen Zhao , Hegeng Mei , Lianqing Zhang , Zhaohui Pei , Jianbin Luo
发明人： Xinchun Lu , Zhenjie Xu , Yongyong He , Tongqing Wang , Pan Shen , Dewen Zhao , Hegeng Mei , Lianqing Zhang , Zhaohui Pei , Jianbin Luo
IPC分类号： B24B37/04
CPC分类号： B24B37/04 , B24B37/10
摘要： A chemical-mechanical polishing machine includes a work table, polishing platen mounted onto the work table, pad conditioner and slurry-delivery device mounted on the work table and disposed near the polishing platen, and polishing-head support mounted on the work table and including a base plate and supporting side plates. The base plate is formed with a groove in a “thickness” direction. A loading and unloading table is mounted on the work table, disposed below the base plate, and opposed to the polishing platen. A polishing head is rotatably disposed on the polishing-head support, movable in the longitudinal direction, and passes through the groove to extend downwardly. A robotic manipulator is disposed near the work table for placing a wafer on the loading and unloading table and taking the wafer away from it. A chemical-mechanical polishing apparatus includes an array of a plurality of the machine.
摘要翻译：化学机械抛光机包括安装在工作台上的工作台，安装在工作台上的抛光台板，安装在工作台上并设置在抛光台板附近的浆料输送装置，以及安装在工作台上的抛光头支架，基板和支撑侧板。底板形成有“厚度”方向的凹槽。装载和卸载台安装在工作台上，设置在底板下方并与抛光台相对。抛光头可旋转地设置在抛光头支撑件上，可沿纵向方向移动，并穿过凹槽向下延伸。机器人操纵器设置在工作台附近，用于将晶片放置在装载和卸载台上并将晶片远离它。化学机械抛光装置包括多个机器的阵列。

4. 发明申请

US20130000845A1 Device and Method for Measuring Thickness of Slurry and Chemical Mechanical Polishing Apparatus Comprising the Device 审中-公开
标题翻译：用于测量浆料厚度的装置和方法以及包括装置的化学机械抛光装置
公开(公告)号：US20130000845A1
公开(公告)日：2013-01-03
申请号：US13387964
申请日：2011-06-07
申请人： Xinchun Lu , Dewen Zhao , Yongyong He , Jianbin Luo
发明人： Xinchun Lu , Dewen Zhao , Yongyong He , Jianbin Luo
IPC分类号： G01B7/06 , B44C1/22
CPC分类号： G01B21/08 , G01B7/10
摘要： A device for measuring a thickness of a slurry used in a chemical mechanical polishing apparatus and a method using the same are provided. The chemical mechanical polishing apparatus comprises a polishing head (10), a rotary table (20), a polishing platen (30) and a polishing pad (40). The device for measuring the thickness of the slurry comprises: a distance sensor (50) disposed in the polishing platen (30) for measuring a distance between the distance sensor (50) and a wafer (11) in the polishing head (10); a processing unit (70) (60) disposed in the rotary table (20) and connected to the distance sensor (50) for converting a measuring signal from the distance sensor (50) into standard electrical signal; a processing unit (70) connected to distance converters (60) for acquiring the standard electrical signal to obtain a thickness of the slurry between the polishing head (10) and the polishing pad (40). A chemical mechanical polishing apparatus comprising the device for measuring the thickness of the slurry is also provided.
摘要翻译：提供了一种用于测量在化学机械抛光装置中使用的浆料的厚度的装置及其使用方法。化学机械抛光装置包括抛光头（10），旋转台（20），研磨台板（30）和抛光垫（40）。用于测量浆料厚度的装置包括：设置在抛光台板（30）中的距离传感器（50），用于测量抛光头（10）中的距离传感器（50）和晶片（11）之间的距离; 设置在旋转台（20）中并连接到距离传感器（50）的处理单元（70），用于将来自距离传感器（50）的测量信号转换成标准电信号; 连接到距离转换器（60）的处理单元（70），用于获取标准电信号以获得抛光头（10）和抛光垫（40）之间的浆料的厚度。还提供了一种包括用于测量浆料厚度的装置的化学机械抛光装置。

5. 发明授权

US09138857B2 Chemical mechanical polishing machine and chemical mechanical polishing apparatus comprising the same 有权
标题翻译：化学机械抛光机及其组成的化学机械抛光装置
公开(公告)号：US09138857B2
公开(公告)日：2015-09-22
申请号：US13384627
申请日：2011-06-08
申请人： Xinchun Lu , Zhenjie Xu , Yongyong He , Tongqing Wang , Pan Shen , Dewen Zhao , Hegeng Mei , Lianqing Zhang , Zhaohui Pei , Jianbin Luo
发明人： Xinchun Lu , Zhenjie Xu , Yongyong He , Tongqing Wang , Pan Shen , Dewen Zhao , Hegeng Mei , Lianqing Zhang , Zhaohui Pei , Jianbin Luo
IPC分类号： B24B37/04 , B24B37/10
CPC分类号： B24B37/04 , B24B37/10
摘要： A chemical-mechanical polishing machine includes a work table, polishing platen mounted onto the work table, pad conditioner and slurry-delivery device mounted on the work table and disposed near the polishing platen, and polishing-head support mounted on the work table and including a base plate and supporting side plates. The base plate is formed with a groove in a “thickness” direction. A loading and unloading table is mounted on the work table, disposed below the base plate, and opposed to the polishing platen. A polishing head is rotatably disposed on the polishing-head support, movable in the longitudinal direction, and passes through the groove to extend downwardly. A robotic manipulator is disposed near the work table for placing a wafer on the loading and unloading table and taking the wafer away from it. A chemical-mechanical polishing apparatus includes an array of a plurality of the machine.
摘要翻译：化学机械抛光机包括安装在工作台上的工作台，安装在工作台上的抛光台板，安装在工作台上并设置在抛光台板附近的浆料输送装置，以及安装在工作台上的抛光头支架，基板和支撑侧板。底板形成有“厚度”方向的凹槽。装载和卸载台安装在工作台上，设置在底板下方并与抛光台相对。抛光头可旋转地设置在抛光头支撑件上，可沿纵向方向移动，并通过凹槽向下延伸。机器人操纵器设置在工作台附近，用于将晶片放置在装载和卸载台上并将晶片远离它。化学机械抛光装置包括多个机器的阵列。

6. 发明申请

US20120315826A1 Device and Method for Measuring Physical Parameters of Slurry and Chemical Mechanical Polishing Apparatus Comprising the Device 审中-公开
标题翻译：用于测量包括装置的浆料和化学机械抛光装置的物理参数的装置和方法
公开(公告)号：US20120315826A1
公开(公告)日：2012-12-13
申请号：US13387941
申请日：2011-06-07
申请人： Xinchun Lu , Dewen Zhao , Yongyong He , Jianbin Luo
发明人： Xinchun Lu , Dewen Zhao , Yongyong He , Jianbin Luo
IPC分类号： B24B49/10 , B24B49/16 , B24B49/14 , B24B7/00 , B24B1/00
CPC分类号： B24B37/044
摘要： The present disclosure discloses a device for measuring physical parameters of a slurry used in a chemical mechanical polishing apparatus and measuring method using the same. The chemical mechanical polishing apparatus comprises a polishing head, a rotary table, a polishing platen and a polishing pad having a through-hole. The device for measuring physical parameters of slurry comprises: a sensor disposed in the polishing platen and adapted to contacted the slurry via the through-hole of the polishing pad for measuring the physical parameters of the slurry; a converter disposed in the rotary table and coupled to the sensor for converting a measuring signal of the sensor into a standard electrical signal; and a processing unit coupled to the converter for acquiring the standard electrical signal to calculate physical parameters of the slurry. According to the device for measuring the physical parameters of the slurry of an embodiment of the present disclosure, the physical parameters of slurry between the polishing head and the polishing pad may be in-suit measured and obtained. The present disclosure further discloses a chemical mechanical polishing apparatus having the device for measuring the physical parameters of the slurry.
摘要翻译：本公开公开了一种用于测量在化学机械抛光装置中使用的浆料的物理参数的装置和使用其的测量方法。化学机械抛光装置包括抛光头，旋转台，抛光台板和具有通孔的抛光垫。用于测量浆料物理参数的装置包括：传感器，设置在研磨台板中并适于经由抛光垫的通孔接触浆料，以测量浆料的物理参数; 转换器，设置在旋转台中并耦合到传感器，用于将传感器的测量信号转换成标准电信号; 以及处理单元，其耦合到所述转换器，用于获取所述标准电信号以计算所述浆料的物理参数。根据本公开的实施例的用于测量浆料的物理参数的装置，可以适当地测量和获得抛光头和抛光垫之间的浆料的物理参数。本公开还公开了一种具有用于测量浆料的物理参数的装置的化学机械抛光装置。

7. 发明授权

US09255780B2 Method for measuring thickness of film on wafer edge 有权
标题翻译：测量晶片边缘薄膜厚度的方法
公开(公告)号：US09255780B2
公开(公告)日：2016-02-09
申请号：US13383555
申请日：2011-06-09
申请人： Xinchun Lu , Pan Shen , Yongyong He
发明人： Xinchun Lu , Pan Shen , Yongyong He
IPC分类号： G01B7/06 , B24B37/013 , B24B49/10 , G06F17/10
CPC分类号： G01B7/06 , B24B37/013 , B24B49/105 , G01B7/105 , G06F17/10
摘要： A method for measuring a film thickness of a film on an edge of a wafer, comprising: off-line detecting a film at a detection point on the wafer by a four-point probe method to obtain a real film thickness of the film at the detection point, and detecting a distance from the detection point to a center of the wafer using a length measurement, in which the detection point is located between the center of the wafer and a edge point of the wafer; detecting the film at the detection point using an eddy current transducer to obtain a detected film thickness of the film at the detection point; determining a film thickness measuring correction factor according to the real film thickness, the detected film thickness at the detection point and the distance from the detection point to the center of the wafer; and measuring the film on an edge of the wafer using the eddy current transducer to obtain a measured film thickness of the film on the edge of the wafer and correcting the measured film thickness of the film on an edge of the wafer according to the film thickness measuring correction factor to obtain a real film thickness of the film on the edge of the wafer.
摘要翻译：一种用于测量晶片边缘上的膜的膜厚度的方法，包括：通过四点探针法在晶片上的检测点处离线检测膜以获得在该晶片上的膜的实际膜厚度检测点，并且使用检测点位于晶片的中心和晶片的边缘点之间的长度测量来检测从检测点到晶片的中心的距离; 使用涡流传感器检测检测点处的膜，以获得检测点处的膜的检测膜厚度; 根据实际膜厚度，检测点处检测到的膜厚度和从检测点到晶片中心的距离来确定膜厚度测量校正因子; 并使用涡电流传感器测量晶片边缘上的膜，以获得在晶片边缘上的膜的测量膜厚度，并且根据膜厚度校正在晶片边缘上的膜的测量膜厚度测量校正因子以获得晶片边缘上的膜的真实膜厚度。

8. 发明申请

US20120115403A1 PAD CONDITIONER HEAD FOR CONDITIONING A POLISHING PAD 审中-公开
标题翻译：用于调节抛光垫的PAD调节器头
公开(公告)号：US20120115403A1
公开(公告)日：2012-05-10
申请号：US13384631
申请日：2011-06-28
申请人： Xinchun Lu , Pan Shen , Yongyong He , Jianbin Luo
发明人： Xinchun Lu , Pan Shen , Yongyong He , Jianbin Luo
IPC分类号： B24B53/12
CPC分类号： B24B53/017
摘要： The pad conditioner head for conditioning a polishing pad comprises a bearing seat, a spindle, a protective cover, an annular pressure plate, a self-adaptive platen, a diamond disk and a flexible ring. A flange is mounted on the lower end of the spindle. A press ring is mounted onto a lower surface of the flange. The flexible ring has an upper edge sandwiched between the flange and the press ring and a lower edge sandwiched between the protective cover and the annular pressure plate. The flexible ring, the flange, the annular pressure plate and the self-adaptive platen define a sealed chamber (M). The protective cover, the annular pressure plate, the self-adaptive platen and the diamond disk are rotatable along with the spindle through the flexible ring and movable in an up and down direction relative to the spindle via a deformation of the flexible ring.
摘要翻译：用于调理抛光垫的垫调节头包括轴承座，心轴，保护盖，环形压板，自适应压板，金刚石圆盘和柔性环。法兰安装在主轴的下端。压环安装在凸缘的下表面上。柔性环具有夹在凸缘和压环之间的上边缘和夹在保护盖和环形压板之间的下边缘。柔性环，法兰，环形压板和自适应压板限定了密封室（M）。保护盖，环形压板，自适应压板和金刚石盘可以通过柔性环与主轴一起旋转，并通过柔性环的变形相对于主轴在上下方向上移动。

9. 发明申请

US20130273819A1 WAFER TRANSFER DEVICE FOR CHEMICAL MECHANICAL POLISHING APPARATUS 审中-公开
标题翻译：化学机械抛光装置的转移装置
公开(公告)号：US20130273819A1
公开(公告)日：2013-10-17
申请号：US13384617
申请日：2011-07-04
申请人： Xinchun Lu , Lianqing Zhang , Pan Shen , Yongyong He
发明人： Xinchun Lu , Lianqing Zhang , Pan Shen , Yongyong He
IPC分类号： B24B37/34
CPC分类号： B24B37/345 , H01L21/68742
摘要： A wafer-transfer device for a chemical-mechanical polishing apparatus includes a base and lifting frame. A first cylinder is connected to a lower portion of the lifting frame to lift it and includes a piston rod passing through the lower portion of the lifting frame and fixed to the base. A basin-shaped contraposition ring is mounted onto an upper portion of the lifting frame via a spring. An inner edge of a top of the contraposition ring defines a curved surface adapted to a contour of a polishing head of the chemical-mechanical polishing apparatus. A wafer support is disposed above the contraposition ring. A second cylinder is mounted onto the contraposition ring and includes a piston rod passing through the contraposition ring and connected to a bottom of the wafer support to lift it. Respective axes of the wafer support, second cylinder, and contraposition ring coincide with one another.
摘要翻译：用于化学机械抛光装置的晶片转移装置包括基座和提升框架。第一气缸连接到提升架的下部以提升它，并且包括通过提升框架的下部并固定到底座的活塞杆。盆形的对位环通过弹簧安装在提升架的上部。相对环的顶部的内边缘限定适于化学机械抛光装置的抛光头的轮廓的弯曲表面。晶片支架设置在对位环之上。第二个气缸安装在对位环上，并包括一个通过对位环的活塞杆，并连接到晶片支架的底部以提升它。晶片支撑件，第二气缸和对位环的轴线彼此重合。

10. 发明申请

US20130211765A1 METHOD FOR MEASURING THICKNESS OF FILM ON WAFER EDGE 有权
标题翻译：测量膜边缘厚度的方法
公开(公告)号：US20130211765A1
公开(公告)日：2013-08-15
申请号：US13383555
申请日：2011-06-09
申请人： Xinchun Lu , Pan Shen , Yongyong He
发明人： Xinchun Lu , Pan Shen , Yongyong He
IPC分类号： G01B7/06 , G06F17/10
CPC分类号： G01B7/06 , B24B37/013 , B24B49/105 , G01B7/105 , G06F17/10
摘要： A method for measuring a film thickness of a film on an edge of a wafer, comprising: off-line detecting a film at a detection point on the wafer by a four-point probe method to obtain a real film thickness of the film at the detection point, and detecting a distance from the detection point to a center of the wafer using a length measurement, in which the detection point is located between the center of the wafer and a edge point of the wafer; detecting the film at the detection point using an eddy current transducer to obtain a detected film thickness of the film at the detection point; determining a film thickness measuring correction factor according to the real film thickness, the detected film thickness at the detection point and the distance from the detection point to the center of the wafer; and measuring the film on an edge of the wafer using the eddy current transducer to obtain a measured film thickness of the film on the edge of the wafer and correcting the measured film thickness of the film on an edge of the wafer according to the film thickness measuring correction factor to obtain a real film thickness of the film on the edge of the wafer.
摘要翻译：一种用于测量晶片边缘上的膜的膜厚度的方法，包括：通过四点探针法在晶片上的检测点处离线检测膜以获得在该晶片上的膜的实际膜厚度检测点，并且使用检测点位于晶片的中心和晶片的边缘点之间的长度测量来检测从检测点到晶片的中心的距离; 使用涡流传感器检测检测点处的膜，以获得检测点处的膜的检测膜厚度; 根据实际膜厚度，检测点处检测到的膜厚度和从检测点到晶片中心的距离来确定膜厚度测量校正因子; 并使用涡电流传感器测量晶片边缘上的膜，以获得在晶片边缘上的膜的测量膜厚度，并且根据膜厚度校正在晶片边缘上的膜的测量膜厚度测量校正因子以获得晶片边缘上的膜的真实膜厚度。

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