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    • 1. 发明授权
    • Preconditioning for EDA cell library
    • EDA细胞库的预处理
    • US08286121B2
    • 2012-10-09
    • US12623027
    • 2009-11-20
    • Xin WangCharles C. Chiang
    • Xin WangCharles C. Chiang
    • G06F11/22G06F17/50G06F9/455
    • G06F17/505G06F17/504
    • A characterized cell library for EDA tools includes one or more mathematical models for each cell, and one or more preconditioning functions (and/or inverse preconditioning functions) for each mathematical model. Each mathematical model represents a performance parameter (e.g., delay, power consumption, noise) or a preconditioned performance parameter of the cell. The preconditioning functions convert an operating parameter (e.g., input slew, output capacitance) associated with the performance parameter into a preconditioned input variable for the mathematical models. In doing so, the preconditioning functions allow for more accurate modeling of complex data relationships without increasing the complexity (e.g., order and number of coefficients) of the mathematical models. Also, because the cell library can be substantially similar to conventional polynomial-based cell libraries except for the inclusion of preconditioning functions, preconditioning does not significantly increase storage requirements and conventional EDA tools can be readily adapted to use the preconditioned cell library.
    • 用于EDA工具的特征化单元库包括用于每个单元的一个或多个数学模型,以及用于每个数学模型的一个或多个预处理函数(和/或反向预处理函数)。 每个数学模型表示单元的性能参数(例如,延迟,功耗,噪声)或预处理的性能参数。 预处理功能将与性能参数相关联的操作参数(例如,输入转换,输出电容)转换为用于数学模型的预条件输入变量。 在这样做时,预处理功能允许复杂数据关系的更准确的建模,而不增加数学模型的复杂性(例如,系数的顺序和数量)。 另外,由于除了包含预处理功能之外,细胞库可以基本上类似于常规的基于多项式的细胞库,所以预处理不会显着增加存储要求,并且常规EDA工具可以容易地适应于使用预处理细胞库。
    • 2. 发明授权
    • Method and apparatus for computing dummy feature density for chemical-mechanical polishing
    • 用于计算化学机械抛光的虚拟特征密度的方法和装置
    • US07594213B2
    • 2009-09-22
    • US10997396
    • 2004-11-24
    • Xin WangCharles C. ChiangJamil Kawa
    • Xin WangCharles C. ChiangJamil Kawa
    • G06F17/50
    • G06F17/5068G06F2217/12Y02P90/265
    • One embodiment of the present invention provides a system that computes dummy feature density for a CMP (Chemical-Mechanical Polishing) process. Note that the dummy feature density is used to add dummy features to a layout to reduce the post-CMP topography variation. During operation, the system discretizes a layout of an integrated circuit into a plurality of panels. Next, the system computes a feature density and a slack density for the plurality of panels. The system then computes a dummy feature density for the plurality of panels by, iteratively, (a) calculating an effective feature density for the plurality of panels using the feature density and a function that models the CMP process, (b) calculating a filling amount for a set of panels in the plurality of panels using a target feature density, the effective feature density, and the slack density, and (c) updating the feature density, the slack density, and the dummy feature density for the set of panels using the filling amount. In one embodiment of the present invention, the iterative process is guided by a variance-minimizing heuristic to efficiently select the set of panels and assign/remove dummy density to the set of panels to decrease the effective feature density variation.
    • 本发明的一个实施例提供了一种计算CMP(化学机械抛光)工艺的虚拟特征密度的系统。 请注意,虚拟特征密度用于向布局添加虚拟特征以减少CMP后的拓扑变化。 在操作期间,系统将集成电路的布局离散到多个面板中。 接下来,系统计算多个面板的特征密度和松弛密度。 然后,系统通过迭代地计算多个面板的虚拟特征密度,(a)使用特征密度计算多个面板的有效特征密度,以及对CMP过程建模的功能,(b)计算填充量 对于使用目标特征密度,有效特征密度和松弛密度的多个面板中的一组面板,以及(c)更新该组面板的特征密度,松弛密度和虚拟特征密度,使用 填充量。 在本发明的一个实施例中,迭代过程由方差最小化启发式引导,以有效地选择面板集合并且将虚空密度分配/去除到该组面板以减小有效特征密度变化。
    • 3. 发明申请
    • METHOD AND APPARATUS FOR COMPUTING DUMMY FEATURE DENSITY FOR CHEMICAL-MECHANICAL POLISHING
    • 计算化学机械抛光特征密度的方法与装置
    • US20090106725A1
    • 2009-04-23
    • US12343958
    • 2008-12-24
    • Xin WangCharles C. ChiangJamil Kawa
    • Xin WangCharles C. ChiangJamil Kawa
    • G06F19/00
    • G06F17/5068G06F2217/12Y02P90/265
    • One embodiment of the present invention provides a system that computes dummy feature density for a CMP (Chemical-Mechanical Polishing) process. Note that the dummy feature density is used to add dummy features to a layout to reduce the post-CMP topography variation. During operation, the system discretizes a layout of an integrated circuit into a plurality of panels. Next, the system computes a feature density and a slack density for the plurality of panels. The system then computes a dummy feature density for the plurality of panels by, iteratively, (a) calculating an effective feature density for the plurality of panels using the feature density and a function that models the CMP process, (b) calculating a filling amount for a set of panels in the plurality of panels using a target feature density, the effective feature density, and the slack density, and (c) updating the feature density, the slack density, and the dummy feature density for the set of panels using the filling amount. In one embodiment of the present invention, the iterative process is guided by a variance-minimizing heuristic to efficiently select the set of panels and assign/remove dummy density to the set of panels to decrease the effective feature density variation.
    • 本发明的一个实施例提供了一种计算CMP(化学机械抛光)工艺的虚拟特征密度的系统。 请注意,虚拟特征密度用于向布局添加虚拟特征以减少CMP后的拓扑变化。 在操作期间,系统将集成电路的布局离散成多个面板。 接下来,系统计算多个面板的特征密度和松弛密度。 然后,系统通过迭代地计算多个面板的虚拟特征密度,(a)使用特征密度计算多个面板的有效特征密度,以及对CMP过程建模的功能,(b)计算填充量 对于使用目标特征密度,有效特征密度和松弛密度的多个面板中的一组面板,以及(c)更新该组面板的特征密度,松弛密度和虚拟特征密度,使用 填充量。 在本发明的一个实施例中,迭代过程由方差最小化启发式引导,以有效地选择面板集合并且将虚空密度分配/去除到该组面板以减小有效特征密度变化。
    • 4. 发明授权
    • Preconditioning for EDA cell library
    • EDA细胞库的预处理
    • US08635580B2
    • 2014-01-21
    • US13619355
    • 2012-09-14
    • Xin WangCharles C. Chiang
    • Xin WangCharles C. Chiang
    • G06F9/455G06F17/50G06F11/22
    • G06F17/505G06F17/504
    • A characterized cell library for EDA tools includes one or more mathematical models for each cell, and one or more preconditioning functions (and/or inverse preconditioning functions) for each mathematical model. Each mathematical model represents a performance parameter (e.g., delay, power consumption, noise) or a preconditioned performance parameter of the cell. The preconditioning functions convert an operating parameter (e.g., input slew, output capacitance) associated with the performance parameter into a preconditioned input variable for the mathematical models. In doing so, the preconditioning functions allow for more accurate modeling of complex data relationships without increasing the complexity (e.g., order and number of coefficients) of the mathematical models. Also, because the cell library can be substantially similar to conventional polynomial-based cell libraries except for the inclusion of preconditioning functions, preconditioning does not significantly increase storage requirements and conventional EDA tools can be readily adapted to use the preconditioned cell library.
    • 用于EDA工具的特征化单元库包括用于每个单元的一个或多个数学模型,以及用于每个数学模型的一个或多个预处理函数(和/或反向预处理函数)。 每个数学模型表示单元的性能参数(例如,延迟,功耗,噪声)或预处理的性能参数。 预处理功能将与性能参数相关联的操作参数(例如,输入转换,输出电容)转换为用于数学模型的预条件输入变量。 在这样做时,预处理功能允许复杂数据关系的更准确的建模,而不增加数学模型的复杂性(例如,系数的顺序和数量)。 另外,由于除了包含预处理功能之外,细胞库可以基本上类似于常规的基于多项式的细胞库,所以预处理不会显着增加存储要求,并且常规EDA工具可以容易地适应于使用预处理细胞库。
    • 5. 发明授权
    • Method and apparatus for computing dummy feature density for chemical-mechanical polishing
    • 用于计算化学机械抛光的虚拟特征密度的方法和装置
    • US08176456B2
    • 2012-05-08
    • US12343958
    • 2008-12-24
    • Xin WangCharles C. ChiangJamil Kawa
    • Xin WangCharles C. ChiangJamil Kawa
    • G06F17/50
    • G06F17/5068G06F2217/12Y02P90/265
    • One embodiment of the present invention provides a system that computes dummy feature density for a CMP (Chemical-Mechanical Polishing) process. Note that the dummy feature density is used to add dummy features to a layout to reduce the post-CMP topography variation. During operation, the system discretizes a layout of an integrated circuit into a plurality of panels. Next, the system computes a feature density and a slack density for the plurality of panels. The system then computes a dummy feature density for the plurality of panels by, iteratively, (a) calculating an effective feature density for the plurality of panels using the feature density and a function that models the CMP process, (b) calculating a filling amount for a set of panels in the plurality of panels using a target feature density, the effective feature density, and the slack density, and (c) updating the feature density, the slack density, and the dummy feature density for the set of panels using the filling amount. In one embodiment of the present invention, the iterative process is guided by a variance-minimizing heuristic to efficiently select the set of panels and assign/remove dummy density to the set of panels to decrease the effective feature density variation.
    • 本发明的一个实施例提供了一种计算CMP(化学机械抛光)工艺的虚拟特征密度的系统。 请注意,虚拟特征密度用于向布局添加虚拟特征以减少CMP后的拓扑变化。 在操作期间,系统将集成电路的布局离散成多个面板。 接下来,系统计算多个面板的特征密度和松弛密度。 然后,系统通过迭代地计算多个面板的虚拟特征密度,(a)使用特征密度计算多个面板的有效特征密度,以及对CMP过程建模的功能,(b)计算填充量 对于使用目标特征密度,有效特征密度和松弛密度的多个面板中的一组面板,以及(c)更新该组面板的特征密度,松弛密度和虚拟特征密度,使用 填充量。 在本发明的一个实施例中,迭代过程由方差最小化启发式引导,以有效地选择面板集合并且将虚空密度分配/去除到该组面板以减小有效特征密度变化。