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1. 发明授权

US07678698B2 Method of forming a semiconductor device with multiple tensile stressor layers 有权
标题翻译：用多个拉伸应力层形成半导体器件的方法
公开(公告)号：US07678698B2
公开(公告)日：2010-03-16
申请号：US11744581
申请日：2007-05-04
申请人： Xiangzheng Bo , Tien Ying Luo , Kurt H. Junker , Paul A. Grudowski , Venkat R. Kolagunta
发明人： Xiangzheng Bo , Tien Ying Luo , Kurt H. Junker , Paul A. Grudowski , Venkat R. Kolagunta
IPC分类号： H01L21/44
CPC分类号： H01L29/7843 , H01L21/268 , H01L21/3105 , H01L21/3185 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile.
摘要翻译：半导体器件具有至少两个用UV辐射固化的拉伸应力层。在第一应力层之后形成第二拉伸应力层。在一些实例中，拉伸应力层包括氮化硅和氢。在一些实例中，第二拉伸应力层由于固化而比第一拉伸应力层具有更大的收缩率。在一种形式中，固化后的第二张应力层比第一拉伸应力层具有更大的拉伸应力。拉伸应力层用于改善N沟道晶体管中的载流子迁移率，从而提高晶体管性能。在一种形式中，提供单组上覆的拉伸应力层，每层越来越厚，并且在固化之前具有越来越多的氢。在其它实施方案中，形成多个重叠的基团，每个基团具有相似的重复深度和氢分布。

2. 发明申请

US20080272411A1 SEMICONDUCTOR DEVICE WITH MULTIPLE TENSILE STRESSOR LAYERS AND METHOD 有权
标题翻译：具有多个拉伸压力层的半导体器件和方法
公开(公告)号：US20080272411A1
公开(公告)日：2008-11-06
申请号：US11744581
申请日：2007-05-04
申请人： Xiangzheng Bo , Tien Ying Luo , Kurt H. Junker , Paul A. Grudowski , Venkat R. Kolagunta
发明人： Xiangzheng Bo , Tien Ying Luo , Kurt H. Junker , Paul A. Grudowski , Venkat R. Kolagunta
IPC分类号： H01L29/78 , H01L21/3205
CPC分类号： H01L29/7843 , H01L21/268 , H01L21/3105 , H01L21/3185 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile.
摘要翻译：半导体器件具有至少两个用UV辐射固化的拉伸应力层。在第一应力层之后形成第二拉伸应力层。在一些实例中，拉伸应力层包括氮化硅和氢。在一些实例中，第二拉伸应力层由于固化而比第一拉伸应力层具有更大的收缩率。在一种形式中，固化后的第二拉伸应力层比第一拉伸应力层具有更大的拉伸应力。拉伸应力层用于改善N沟道晶体管中的载流子迁移率，从而提高晶体管性能。在一种形式中，提供单组上覆的拉伸应力层，每层越来越厚，并且在固化之前具有越来越多的氢。在其它实施方案中，形成多个重叠的基团，每个基团具有相似的重复深度和氢分布。

3. 发明申请

US20080026517A1 METHOD FOR FORMING A STRESSOR LAYER 审中-公开
标题翻译：形成压力层的方法
公开(公告)号：US20080026517A1
公开(公告)日：2008-01-31
申请号：US11460742
申请日：2006-07-28
申请人： Paul A. Grudowski , Kurt H. Junker , Venkat R. Kolagunta
发明人： Paul A. Grudowski , Kurt H. Junker , Venkat R. Kolagunta
IPC分类号： H01L21/8234
CPC分类号： H01L29/7843 , H01L21/823807 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： In one aspect, a method for forming a semiconductor device includes forming a stressor layer over a gate stack and a spacer adjacent the gate stack, implanting a species into at least a portion of the stressor layer, and curing the stressor layer. In another aspect, a method includes forming an etch stop layer over a semiconductor substrate, where the etch stop layer has a structure, modifying at least a portion of the structure of the etch stop layer, and curing the etch stop layer after modifying at least the portion of the structure of the etch stop layer.
摘要翻译：在一个方面，一种用于形成半导体器件的方法包括在栅极叠层上形成应力层，邻近栅叠层形成间隔物，将物质注入至少一部分应力层中，并固化应力层。在另一方面，一种方法包括在半导体衬底上形成蚀刻停止层，其中蚀刻停止层具有结构，修饰蚀刻停止层的结构的至少一部分，以及在至少修改蚀刻停止层之后固化蚀刻停止层蚀刻停止层的结构部分。

4. 发明申请

US20080173986A1 Multilayer silicon nitride deposition for a semiconductor device 有权
标题翻译：用于半导体器件的多层氮化硅沉积
公开(公告)号：US20080173986A1
公开(公告)日：2008-07-24
申请号：US12008607
申请日：2008-01-11
申请人： Kurt H. Junker , Paul A. Grudowski , Xiang-Zheng Bo , Tien Ying Luo
发明人： Kurt H. Junker , Paul A. Grudowski , Xiang-Zheng Bo , Tien Ying Luo
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： H01L21/823807 , H01L29/78 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate (209) and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (231) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (233) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.
摘要翻译：提供一种制造半导体器件的方法，其包括（a）提供配备有栅极（209）和沟道区域的半导体结构，所述沟道区域与栅极相关联; （b）在半导体结构上沉积第一应力源材料的第一子层（231），所述第一应力材料含有硅 - 氮键并向半导体结构施加拉伸应力; （c）通过暴露于辐射源固化第一应激物材料; （d）在所述第一子层上沉积第二应力源材料的第二子层（233），所述第二应力材料含有硅 - 氮键并向所述半导体结构施加拉伸应力; 和（e）通过暴露于辐射源固化应力源材料的第二子层。

5. 发明申请

US20110210401A1 MULTILAYER SILICON NITRIDE DEPOSITION FOR A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于半导体器件的多层硅氮化物沉积
公开(公告)号：US20110210401A1
公开(公告)日：2011-09-01
申请号：US12713262
申请日：2010-02-26
申请人： Kurt H. Junker , Paul A. Grudowski , Xiang-Zheng Bo , Tien Ying Luo
发明人： Kurt H. Junker , Paul A. Grudowski , Xiang-Zheng Bo , Tien Ying Luo
IPC分类号： H01L27/092 , H01L29/78
CPC分类号： H01L21/823807 , H01L21/0214 , H01L21/0217 , H01L21/02274 , H01L27/092 , H01L29/78 , H01L29/7843
摘要： A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate (209) and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (231) of a first stressor material over the semiconductor structure, said first stressor material containing silicon- nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (233) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.
摘要翻译：提供一种制造半导体器件的方法，其包括（a）提供配备有栅极（209）和沟道区域的半导体结构，所述沟道区域与栅极相关联; （b）在半导体结构上沉积第一应力源材料的第一子层（231），所述第一应力材料含有硅 - 氮键并向半导体结构施加拉伸应力; （c）通过暴露于辐射源固化第一应激物材料; （d）在所述第一子层上沉积第二应力源材料的第二子层（233），所述第二应力材料含有硅 - 氮键并向所述半导体结构施加拉伸应力; 和（e）通过暴露于辐射源固化应力源材料的第二子层。

6. 发明申请

US20080173908A1 Multilayer silicon nitride deposition for a semiconductor device 审中-公开
标题翻译：用于半导体器件的多层氮化硅沉积
公开(公告)号：US20080173908A1
公开(公告)日：2008-07-24
申请号：US11655461
申请日：2007-01-19
申请人： Kurt H. Junker , Paul A. Grudowski , Xiang-Zheng Bo , Tien Ying Luo
发明人： Kurt H. Junker , Paul A. Grudowski , Xiang-Zheng Bo , Tien Ying Luo
IPC分类号： H01L29/78 , H01L21/3105 , H01L21/8238
CPC分类号： H01L21/02348 , H01L21/0217 , H01L21/02274 , H01L21/02351 , H01L21/3105 , H01L21/3185 , H01L21/823807 , H01L29/7843
摘要： A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (131) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (133) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.
摘要翻译：提供了制造半导体器件的方法，其包括（a）提供配备有栅极和沟道区域的半导体结构，所述沟道区域与栅极相关联; （b）在半导体结构上沉积第一应力源材料的第一子层（131），所述第一应力源材料含有硅 - 氮键并向半导体结构施加拉伸应力; （c）通过暴露于辐射源固化第一应激物材料; （d）在所述第一子层上沉积第二应力源材料的第二子层（133），所述第二应力源材料含有硅 - 氮键并向所述半导体结构施加拉伸应力; 和（e）通过暴露于辐射源固化应力源材料的第二子层。

7. 发明授权

US07700499B2 Multilayer silicon nitride deposition for a semiconductor device 有权
标题翻译：用于半导体器件的多层氮化硅沉积
公开(公告)号：US07700499B2
公开(公告)日：2010-04-20
申请号：US12008607
申请日：2008-01-11
申请人： Kurt H. Junker , Paul A. Grudowski , Xiang-Zheng Bo , Tien Ying Luo
发明人： Kurt H. Junker , Paul A. Grudowski , Xiang-Zheng Bo , Tien Ying Luo
IPC分类号： H01L21/31
CPC分类号： H01L21/823807 , H01L29/78 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate (209) and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (231) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (233) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.
摘要翻译：提供一种制造半导体器件的方法，其包括（a）提供配备有栅极（209）和沟道区域的半导体结构，所述沟道区域与栅极相关联; （b）在半导体结构上沉积第一应力源材料的第一子层（231），所述第一应力材料含有硅 - 氮键并向半导体结构施加拉伸应力; （c）通过暴露于辐射源固化第一应激物材料; （d）在所述第一子层上沉积第二应力源材料的第二子层（233），所述第二应力材料含有硅 - 氮键并向所述半导体结构施加拉伸应力; 和（e）通过暴露于辐射源固化应力源材料的第二子层。

8. 发明申请

US20090075434A1 METHOD OF REMOVING DEFECTS FROM A DIELECTRIC MATERIAL IN A SEMICONDUCTOR 有权
标题翻译：从半导体中的介电材料中去除缺陷的方法
公开(公告)号：US20090075434A1
公开(公告)日：2009-03-19
申请号：US11855557
申请日：2007-09-14
申请人： Kurt H. Junker , Tien-Ying Luo , Dina H. Triyoso
发明人： Kurt H. Junker , Tien-Ying Luo , Dina H. Triyoso
IPC分类号： H01L21/30
CPC分类号： H01L21/3105 , H01L21/2686 , H01L21/28176 , H01L21/28185 , H01L21/28273 , H01L21/3003 , H01L28/40 , H01L29/517
摘要： A method of forming a semiconductor device includes forming a high dielectric constant material over a semiconductor substrate, forming a conductive material over the high dielectric constant material, and performing an anneal in a non-oxidizing ambient using ultraviolet radiation to remove defects in the high dielectric constant material. Examples of a non-oxidizing ambient include for example nitrogen, deuterium, a deuterated forming gas (N2/D2), helium, argon or a combination of any two or more of these. Additional anneals using ultraviolet radiation may be performed. These additional anneals may occur in non-oxidizing or oxidizing ambients.
摘要翻译：一种形成半导体器件的方法包括在半导体衬底上形成高介电常数材料，在高介电常数材料上形成导电材料，并使用紫外线辐射在非氧化环境中进行退火以去除高电介质中的缺陷恒定材料。非氧化性环境的实例包括例如氮，氘，氘代形成气体（N 2 / D 2），氦气，氩气或这些中的任何两种或更多种的组合。可以进行使用紫外线辐射的附加退火。这些额外的退火可能发生在非氧化或氧化环境中。

9. 发明授权

US07776731B2 Method of removing defects from a dielectric material in a semiconductor 有权
标题翻译：从半导体中的电介质材料中去除缺陷的方法
公开(公告)号：US07776731B2
公开(公告)日：2010-08-17
申请号：US11855557
申请日：2007-09-14
申请人： Kurt H. Junker , Tien-Ying Luo , Dina H. Triyoso
发明人： Kurt H. Junker , Tien-Ying Luo , Dina H. Triyoso
IPC分类号： H01L21/3205
CPC分类号： H01L21/3105 , H01L21/2686 , H01L21/28176 , H01L21/28185 , H01L21/28273 , H01L21/3003 , H01L28/40 , H01L29/517
摘要： A method of forming a semiconductor device includes forming a high dielectric constant material over a semiconductor substrate, forming a conductive material over the high dielectric constant material, and performing an anneal in a non-oxidizing ambient using ultraviolet radiation to remove defects in the high dielectric constant material. Examples of a non-oxidizing ambient include for example nitrogen, deuterium, a deuterated forming gas (N2/D2), helium, argon or a combination of any two or more of these. Additional anneals using ultraviolet radiation may be performed. These additional anneals may occur in non-oxidizing or oxidizing ambients.
摘要翻译：一种形成半导体器件的方法包括在半导体衬底上形成高介电常数材料，在高介电常数材料上形成导电材料，并使用紫外线辐射在非氧化环境中进行退火以去除高电介质中的缺陷恒定材料。非氧化性环境的实例包括例如氮，氘，氘化形成气体（N 2 / D 2），氦气，氩气或这些中的任何两种或更多种的组合。可以进行使用紫外线辐射的附加退火。这些额外的退火可能发生在非氧化或氧化环境中。

10. 发明授权

US07579228B2 Disposable organic spacers 有权
标题翻译：一次性有机垫片
公开(公告)号：US07579228B2
公开(公告)日：2009-08-25
申请号：US11825953
申请日：2007-07-10
申请人： Paul A. Grudowski , Kurt H. Junker , Thomas J. Kropewnicki , Andrew G. Nagy
发明人： Paul A. Grudowski , Kurt H. Junker , Thomas J. Kropewnicki , Andrew G. Nagy
IPC分类号： H01L21/8238
CPC分类号： H01L21/823468 , H01L21/02115 , H01L21/02274 , H01L21/31122 , H01L21/31138 , H01L21/312 , H01L21/3146 , H01L21/823864 , H01L29/6653 , Y10S438/943
摘要： A method for making a semiconductor device is provided, comprising (a) providing a semiconductor structure comprising a first gate electrode (210); (b) forming a first set of organic spacers (213) adjacent to said first electrode; (c) depositing a first photo mask (215) over the structure; and (d) simultaneously removing the first set of organic spacers and the first photo mask.
摘要翻译：提供一种制造半导体器件的方法，包括（a）提供包括第一栅电极（210）的半导体结构; （b）形成与所述第一电极相邻的第一组有机间隔物（213）; （c）在所述结构上沉积第一光掩模（215）; 和（d）同时去除第一组有机间隔物和第一光掩模。

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