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1. 发明授权

US08901006B2 ARC residue-free etching 有权
标题翻译：无ARC残留蚀刻
公开(公告)号：US08901006B2
公开(公告)日：2014-12-02
申请号：US13081020
申请日：2011-04-06
申请人： Xiang Hu , Richard S. Wise , Habib Hichri , Catherine Labelle
发明人： Xiang Hu , Richard S. Wise , Habib Hichri , Catherine Labelle
IPC分类号： H01L21/3213 , H01L21/311 , H01L27/11 , H01L21/3105
CPC分类号： H01L23/48 , H01L21/31055 , H01L21/311 , H01L21/31111 , H01L21/3213 , H01L21/32139 , H01L27/11 , H01L2924/0002 , H01L2924/00
摘要： Antireflective residues during pattern transfer and consequential short circuiting are eliminated by employing an underlying sacrificial layer to ensure complete removal of the antireflective layer. Embodiments include forming a hard mask layer over a conductive layer, e.g., a silicon substrate, forming the sacrificial layer over the hard mask layer, forming an optical dispersive layer over the sacrificial layer, forming a silicon anti-reflective coating layer over the optical dispersive layer, forming a photoresist layer over the silicon anti-reflective coating layer, where the photoresist layer defines a pattern, etching to transfer the pattern to the hard mask layer, and stripping at least the optical dispersive layer and the sacrificial layer.
摘要翻译：在图案转印和后续短路过程中的抗反射残余物通过使用下面的牺牲层来确保完全去除抗反射层而消除。实施例包括在导电层（例如硅衬底）上形成硬掩模层，在硬掩模层上形成牺牲层，在牺牲层上形成光学色散层，在光学色散上形成硅抗反射涂层在硅抗反射涂层上形成光致抗蚀剂层，其中光致抗蚀剂层限定图案，蚀刻以将图案转移到硬掩模层，以及剥离至少光学色散层和牺牲层。

2. 发明授权

US08030157B1 Liner protection in deep trench etching 失效
标题翻译：衬里保护深沟蚀刻
公开(公告)号：US08030157B1
公开(公告)日：2011-10-04
申请号：US12782050
申请日：2010-05-18
申请人： Habib Hichri , Ahmad D. Katnani , Kaushik A. Kumar , Narender Rana , Richard S. Wise , Hakeem B. S. Akinmade-Yusuff
发明人： Habib Hichri , Ahmad D. Katnani , Kaushik A. Kumar , Narender Rana , Richard S. Wise , Hakeem B. S. Akinmade-Yusuff
IPC分类号： H01L21/8242
CPC分类号： H01L21/76232
摘要： A method of forming a trench in a semiconductor device formed of a substrate and a first layer formed over the substrate includes forming an initial trench that passes through the first layer to the substrate, the initial trench having a diameter that decreases from a first diameter to a second diameter, the second diameter being measured at a distance closer to the substrate than the first diameter; exposing the trench to a dopant via an orthogonal ion implant to form doped regions sidewalls of the trench; and etching the trench to remove at least some of the doped regions.
摘要翻译：在由衬底和形成在衬底上的第一层形成的半导体器件中形成沟槽的方法包括形成通过第一层到衬底的初始沟槽，初始沟槽的直径从第一直径减小到第二直径，第二直径在比第一直径更靠近基板的距离处被测量; 通过正交离子注入将沟槽暴露于掺杂剂以形成沟槽的掺杂区域侧壁; 并蚀刻沟槽以去除至少一些掺杂区域。

3. 发明授权

US08492280B1 Method for simultaneously forming features of different depths in a semiconductor substrate 失效
标题翻译：同时形成半导体衬底中不同深度的特征的方法
公开(公告)号：US08492280B1
公开(公告)日：2013-07-23
申请号：US13465050
申请日：2012-05-07
申请人： Habib Hichri , Xi Li , Richard S. Wise
发明人： Habib Hichri , Xi Li , Richard S. Wise
IPC分类号： H01L21/311
CPC分类号： H01L21/3065 , H01L21/76229 , H01L21/84 , H01L27/1087 , H01L29/66181
摘要： Embodiments of the invention may include first providing a stack of layers including a semiconductor substrate, a buried oxide layer on the semiconductor substrate, a semiconductor-on-insulator layer on the buried-oxide layer, a nitride layer on the semiconductor-on-insulator layer, and a silicon oxide layer on the nitride layer. A first opening and second opening with a smaller cross-sectional area than the first opening are then formed in the silicon oxide layer, the nitride layer, the semiconductor-on-insulator layer, and the buried-oxide layer. The first opening and the second opening are then etched with a first etching gas. The first opening and the second opening are then etched with a second etching gas, which includes the first etching gas and a halogenated silicon compound, for example, silicon tetrafluoride or silicon tetrachloride. In one embodiment, the first etching gas includes hydrogen bromide, nitrogen trifluoride, and oxygen.
摘要翻译：本发明的实施例可以包括首先提供包括半导体衬底，半导体衬底上的掩埋氧化物层，掩埋氧化物层上的绝缘体上半导体层，绝缘体上半导体上的氮化物层层和氮化物层上的氧化硅层。然后在氧化硅层，氮化物层，绝缘体上半导体层和掩埋氧化物层上形成具有比第一开口更小的横截面面积的第一开口和第二开口。然后用第一蚀刻气体蚀刻第一开口和第二开口。然后用第二蚀刻气体蚀刻第一开口和第二开口，第二蚀刻气体包括第一蚀刻气体和卤化硅化合物，例如四氟化硅或四氯化硅。在一个实施方案中，第一蚀刻气体包括溴化氢，三氟化氮和氧。

4. 发明申请

US20130200471A1 ALIGNMENT TOLERANT SEMICONDUCTOR CONTACT AND METHOD 有权
标题翻译：对准耐磨半导体接触和方法
公开(公告)号：US20130200471A1
公开(公告)日：2013-08-08
申请号：US13364976
申请日：2012-02-02
申请人： André P. Labonté , Richard S. Wise
发明人： André P. Labonté , Richard S. Wise
IPC分类号： H01L29/78 , H01L21/768
CPC分类号： H01L21/28247 , H01L21/76814 , H01L21/76888 , H01L21/76897 , H01L29/66545
摘要： An alignment tolerant electrical contact is formed by providing a substrate on which is a first electrically conductive region (e.g., a MOSFET gate) having an upper surface, the first electrically conductive region being laterally bounded by a first dielectric region, applying a mask having an opening extending partly over a contact region (e.g., for the MOSFET source or drain) on the substrate and over a part of the upper surface, forming a passage through the first dielectric region extending to the contact region and the part of the upper surface, thereby exposing the contact region and the part of the upper surface, converting the part of the upper surface to a second dielectric region and filling the opening with a conductor making electrical contact with the contact region but electrically insulated from the electrically conductive region by the second dielectric region.
摘要翻译：通过提供其上具有上表面的第一导电区域（例如，MOSFET栅极）的衬底来形成对准容限的电接触，所述第一导电区域被第一介电区域横向界定，施加具有部分地覆盖在衬底上并在上表面的一部分上的接触区域（例如，用于MOSFET源极或漏极）上的开口，形成通过延伸到接触区域和上表面的部分的第一介电区域的通道，从而暴露接触区域和上表面的一部分，将上表面的一部分转换成第二电介质区域，并且用与接触区域电接触但与导电区域电绝缘的导体填充开口电介质区域。

5. 发明申请

US20120139061A1 Self-Aligned Contact For Replacement Gate Devices 有权
标题翻译：用于替代门装置的自对准触点
公开(公告)号：US20120139061A1
公开(公告)日：2012-06-07
申请号：US12958607
申请日：2010-12-02
申请人： Ravikumar Ramachandran , Ying Li , Richard S. Wise
发明人： Ravikumar Ramachandran , Ying Li , Richard S. Wise
IPC分类号： H01L29/772 , H01L21/283
CPC分类号： H01L29/78 , H01L21/76895 , H01L21/76897 , H01L21/823842 , H01L21/823871 , H01L29/49 , H01L29/51 , H01L29/66545 , H01L29/66606 , H01L29/7833 , H01L29/7843
摘要： A conductive top surface of a replacement gate stack is recessed relative to a top surface of a planarization dielectric layer by at least one etch. A dielectric capping layer is deposited over the planarization dielectric layer and the top surface of the replacement gate stack so that the top surface of a portion of the dielectric capping layer over the replacement gate stack is vertically recessed relative to another portion of the dielectric layer above the planarization dielectric layer. The vertical offset of the dielectric capping layer can be employed in conjunction with selective via etch processes to form a self-aligned contact structure.
摘要翻译：替代栅极堆叠的导电顶表面通过至少一个蚀刻相对于平坦化介电层的顶表面凹陷。介电覆盖层沉积在平坦化电介质层和替代栅极堆叠的顶表面上，使得替代栅极堆叠上的介电顶盖层的一部分的顶表面相对于上述电介质层的另一部分垂直凹陷平坦化介电层。电介质覆盖层的垂直偏移可以与选择性通孔蚀刻工艺结合使用以形成自对准接触结构。

6. 发明授权

US07943457B2 Dual metal and dual dielectric integration for metal high-k FETs 有权
标题翻译：金属高k FET的双金属和双电介质集成
公开(公告)号：US07943457B2
公开(公告)日：2011-05-17
申请号：US12423236
申请日：2009-04-14
申请人： Michael P. Chudzik , Wiliam K. Henson , Rashmi Jha , Yue Liang , Ravikumar Ramachandran , Richard S. Wise
发明人： Michael P. Chudzik , Wiliam K. Henson , Rashmi Jha , Yue Liang , Ravikumar Ramachandran , Richard S. Wise
IPC分类号： H01L21/336
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/823842 , H01L21/823857 , H01L29/49 , H01L29/7833
摘要： The present invention, in one embodiment, provides a method of forming a semiconductor device that includes providing a substrate including a first conductivity type region and a second conductivity type region; forming a gate stack including a gate dielectric atop the first conductivity type region and the second conductivity type region of the substrate and a first metal gate conductor overlying the high-k gate dielectric; removing a portion of the first metal gate conductor that is present in the first conductivity type region to expose the gate dielectric present in the first conductivity type region; applying a nitrogen based plasma to the substrate, wherein the nitrogen based plasma nitrides the gate dielectric that is present in the first conductivity type region and nitrides the first metal gate conductor that is present in the second conductivity type region; and forming a second metal gate conductor overlying at least the gate dielectric that is present in the first conductivity type region.
摘要翻译：在一个实施例中，本发明提供一种形成半导体器件的方法，该半导体器件包括提供包括第一导电类型区域和第二导电类型区域的衬底; 在所述基板的第一导电类型区域和所述第二导电类型区域之上形成包括栅极电介质的栅极堆叠和覆盖所述高k栅极电介质的第一金属栅极导体; 去除存在于第一导电类型区域中的第一金属栅极导体的一部分以暴露存在于第一导电类型区域中的栅极电介质; 将氮基等离子体施加到所述基板，其中所述氮基等离子体氮化存在于所述第一导电类型区域中的所述栅极电介质，并且氮化所述第二导电类型区域中存在的所述第一金属栅极导体; 以及形成覆盖存在于第一导电类型区域中的至少栅极电介质的第二金属栅极导体。

7. 发明申请

US20110104426A1 EDGE PROTECTION SEAL FOR BONDED SUBSTRATES 失效
标题翻译：贴边基板的边缘保护密封
公开(公告)号：US20110104426A1
公开(公告)日：2011-05-05
申请号：US12608363
申请日：2009-10-29
申请人： Mukta G. Farooq , Emily Kinser , Richard S. Wise , Hakeem B.S. Akinmade-Yusuff
发明人： Mukta G. Farooq , Emily Kinser , Richard S. Wise , Hakeem B.S. Akinmade-Yusuff
IPC分类号： B32B1/04 , B32B38/00
CPC分类号： H01L21/02263 , H01L21/187 , H01L21/76898 , H01L25/074 , H01L25/50 , H01L2924/0002 , H01L2924/00
摘要： A dielectric material layer is deposited on exposed surfaces of a bonded structure that includes a first substrate and a second substrate. The dielectric material layer is formed on an exposed planar surface of a second substrate and the entirety of peripheral sidewalls of the first and second substrates. The dielectric material layer can be formed by chemical vapor deposition, atomic layer deposition, or plasma induced deposition. Further, the dielectric material layer seals the entire periphery of the interface between the first and second substrates. If a planar portion of the dielectric material layer can be removed by planarization to facilitate thinning of the bonded structure, the remaining portion of the dielectric material layer can form a dielectric ring.
摘要翻译：介电材料层沉积在包括第一基板和第二基板的接合结构的暴露表面上。介电材料层形成在第二基板的暴露的平坦表面和第一和第二基板的整个周边侧壁上。介电材料层可以通过化学气相沉积，原子层沉积或等离子体诱导沉积形成。此外，介电材料层密封第一和第二基板之间的界面的整个周边。如果可以通过平坦化去除电介质材料层的平面部分以便于键合结构的薄化，则介电材料层的剩余部分可以形成介电环。

8. 发明申请

US20100029082A1 METHOD AND APPARATUS FOR ANGULAR HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION 有权
标题翻译：用于高密度等离子体化学蒸气沉积的方法和装置
公开(公告)号：US20100029082A1
公开(公告)日：2010-02-04
申请号：US12185339
申请日：2008-08-04
申请人： Daewon Yang , Kangguo Cheng , Pavel Smetana , Richard S. Wise , Keith Kwong Hon Wong
发明人： Daewon Yang , Kangguo Cheng , Pavel Smetana , Richard S. Wise , Keith Kwong Hon Wong
IPC分类号： H01L21/311 , C23C16/00
CPC分类号： C23C16/507 , C23C16/345 , C23C16/402 , C23C16/45578 , C23C16/4586 , C23C16/56 , H01J37/20 , H01J37/321 , H01J2237/20207 , H01J2237/3323 , H01L21/31608 , H01L21/3185 , H01L27/10867
摘要： Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area of a third of the STI trenches; removing dielectric material from the third STI trench; forming a gate stack having a first portion located between the first and the second of the STI trenches and a second portion located over and extending into the third trench; and performing a source/drain implant of the same polarity as the second cell well, thereby forming a FET in the first cell well, and a capacitor in the second cell well. The second polarity may be opposite from the first polarity. An additional implant may reduce ESR in the second cell well.
摘要翻译：通过形成多个STI沟槽与FET结合形成浅沟槽电容器; 对于FET，在第一和第二STI沟槽之间注入具有第一极性的第一单元阱; 对于电容器，在第三个STI沟槽的区域中注入具有第二极性的第二单元阱; 从第三STI沟槽去除电介质材料; 形成具有位于所述STI沟槽的所述第一和第二STI沟槽之间的第一部分和位于所述第三沟槽中并延伸到所述第三沟槽中的第二部分的栅极堆叠; 并且执行与第二单元阱相同极性的源极/漏极注入，从而在第一单元阱中形成FET，以及在第二单元阱中形成电容器。第二极性可以与第一极性相反。额外的植入物可以减少第二细胞中的ESR。

9. 发明授权

US07645356B2 Method of processing wafers with resonant heating 失效
标题翻译：用共振加热处理晶片的方法
公开(公告)号：US07645356B2
公开(公告)日：2010-01-12
申请号：US10721657
申请日：2003-11-25
申请人： Siddhartha Panda , Richard S. Wise
发明人： Siddhartha Panda , Richard S. Wise
IPC分类号： C23F1/00
CPC分类号： H01J37/32339 , H01L21/3065 , H01L21/32136
摘要： A method of etching a wafer using resonant infrared energy and a filter to control non-uniformities during plasma etch processing. The filter includes a predetermined array or stacked arrangement of variable transmission regions that mirror the spatial etch distortions caused by the plasma etching process. By spatially attenuating the levels of IR energy that reach the wafer, the filter improves uniformity in the etching process. Filters may be designed to compensate for edge fast etching due to macro-loading, asymmetric pumping in a plasma chamber, and magnetic field cusping.
摘要翻译：使用谐振红外能量蚀刻晶片的方法和用于在等离子体蚀刻处理期间控制不均匀性的滤光器。滤波器包括可反映由等离子体蚀刻工艺引起的空间蚀刻失真的可变透射区域的预定阵列或堆叠布置。通过空间衰减到达晶片的IR能量的水平，滤波器改善了蚀刻工艺中的均匀性。滤波器可以被设计为补偿由于宏载荷，等离子体室中的不对称泵浦和磁场冲击造成的边缘快速蚀刻。

10. 发明申请

US20090047791A1 SEMICONDUCTOR ETCHING METHODS 审中-公开
标题翻译：半导体蚀刻方法
公开(公告)号：US20090047791A1
公开(公告)日：2009-02-19
申请号：US11839681
申请日：2007-08-16
申请人： David M. Dobuzinsky , Johnathan E. Faltermeier , Munir D. Naeem , William C. Wille , Richard S. Wise
发明人： David M. Dobuzinsky , Johnathan E. Faltermeier , Munir D. Naeem , William C. Wille , Richard S. Wise
IPC分类号： H01L21/302
CPC分类号： H01L21/3081 , H01L27/10844 , H01L27/11
摘要： A method of etching semiconductor structures is disclosed. The method may include etching an SRAM portion of a semiconductor device, the method comprising: providing a silicon substrate layer, a nitride layer thereover, an optical dispersive layer over the nitride layer, and a silicon anti-reflective coating layer thereover; etching the silicon anti-reflective coating layer using an image layer; removing the image layer; etching the optical dispersive layer while removing the silicon anti-reflective coating layer; etching the optical dispersive layer and the nitride layer simultaneously; and etching the optical dispersive layer, the nitride layer, and the silicon substrate simultaneously.
摘要翻译：公开了蚀刻半导体结构的方法。该方法可以包括蚀刻半导体器件的SRAM部分，该方法包括：提供硅衬底层，其上的氮化物层，氮化物层上的光学色散层和其上的硅抗反射涂层; 使用图像层蚀刻硅抗反射涂层; 去除图像层; 在去除硅抗反射涂层的同时蚀刻光学色散层; 同时蚀刻光学色散层和氮化物层; 并同时蚀刻光学色散层，氮化物层和硅衬底。

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