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1. 发明授权

US09080239B2 Method and apparatus for angular high density plasma chemical vapor deposition 有权
标题翻译：用于角高密度等离子体化学气相沉积的方法和装置
公开(公告)号：US09080239B2
公开(公告)日：2015-07-14
申请号：US13434934
申请日：2012-03-30
申请人： Daewon Yang , Kangguo Cheng , Pavel Smetana , Richard S. Wise , Keith Kwong Hon Wong
发明人： Daewon Yang , Kangguo Cheng , Pavel Smetana , Richard S. Wise , Keith Kwong Hon Wong
IPC分类号： C23C16/507 , C23C16/34 , C23C16/40 , C23C16/455 , C23C16/458 , C23C16/56 , H01J37/20 , H01J37/32 , H01L27/108 , H01L21/316 , H01L21/318
CPC分类号： C23C16/507 , C23C16/345 , C23C16/402 , C23C16/45578 , C23C16/4586 , C23C16/56 , H01J37/20 , H01J37/321 , H01J2237/20207 , H01J2237/3323 , H01L21/31608 , H01L21/3185 , H01L27/10867
摘要： Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area of a third of the STI trenches; removing dielectric material from the third STI trench; forming a gate stack having a first portion located between the first and the second of the STI trenches and a second portion located over and extending into the third trench; and performing a source/drain implant of the same polarity as the second cell well, thereby forming a FET in the first cell well, and a capacitor in the second cell well. The second polarity may be opposite from the first polarity. An additional implant may reduce ESR in the second cell well.
摘要翻译：通过形成多个STI沟槽与FET结合形成浅沟槽电容器; 对于FET，在第一和第二STI沟槽之间注入具有第一极性的第一单元阱; 对于电容器，在第三个STI沟槽的区域中注入具有第二极性的第二单元阱; 从第三STI沟槽去除电介质材料; 形成具有位于所述STI沟槽的所述第一和第二STI沟槽之间的第一部分和位于所述第三沟槽中并延伸到所述第三沟槽中的第二部分的栅极堆叠; 并且执行与第二单元阱相同极性的源极/漏极注入，从而在第一单元阱中形成FET，以及在第二单元阱中形成电容器。第二极性可以与第一极性相反。额外的植入物可以减少第二细胞中的ESR。

2. 发明授权

US07372689B2 Guard wafer for semiconductor structure fabrication 有权
标题翻译：用于半导体结构制造的保护晶片
公开(公告)号：US07372689B2
公开(公告)日：2008-05-13
申请号：US10907508
申请日：2005-04-04
申请人： Scott M. Hargash , Pavel Smetana
发明人： Scott M. Hargash , Pavel Smetana
IPC分类号： H02N13/00
CPC分类号： C23C16/4581 , C23C16/4404 , H01L21/6831
摘要： An apparatus (and method for operating the same) which allows tightly coupling the device wafer to the electrostatic chuck of the process chamber after the process chamber is conditioned. The method comprises (a) providing (i) a process chamber and (ii) an electrostatic chuck in the process chamber; (b) placing a guard wafer on the electrostatic chuck via a top surface of the electrostatic chuck; and (c) forming a particle restraining layer on essentially all surfaces that are exposed to the ambient inside the process chamber, wherein the particle restraining layer has a thickness in a first direction of at least 500 Å, wherein the first direction is essentially perpendicular to an interfacing surface between the particle restraining layer and an inner surface of the process chamber, and wherein the guard wafer comprises a material selected from the group consisting of a metal and a semiconductor oxide.
摘要翻译：一种用于操作该装置的装置（及其操作方法），其允许在处理室被调节之后将装置晶片紧密地耦合到处理室的静电卡盘。该方法包括（a）在处理室中提供（i）处理室和（ii）静电卡盘; （b）通过静电卡盘的顶表面将防护晶片放置在静电卡盘上; 并且（c）在基本上暴露于处理室内的环境的所有表面上形成颗粒抑制层，其中所述颗粒限制层具有至少在第一方向上的厚度，其中所述第一方向基本上垂直于颗粒限制层和处理室的内表面之间的接合表面，并且其中防护晶片包括选自金属和半导体氧化物的材料。

3. 发明授权

US06626188B2 Method for cleaning and preconditioning a chemical vapor deposition chamber dome 失效
公开(公告)号：US06626188B2
公开(公告)日：2003-09-30
申请号：US09894499
申请日：2001-06-28
申请人： John A. Fitzsimmons , Thomas H. Ivers , Pavel Smetana
发明人： John A. Fitzsimmons , Thomas H. Ivers , Pavel Smetana
IPC分类号： C25F500
CPC分类号： C23C16/4411 , B08B7/00 , C23C16/4405 , Y10S438/905
摘要： The present invention relates generally to the field of semiconductor device manufacturing, and more specifically to a method for cleaning and preconditioning a dome in a chemical vapor deposition system. During cleaning, the direction of flow of cooling water through an induction coil in the dome is reversed. During preconditioning, the direction of cooling water flow is preferably reversed again, such that it is the same direction as during deposition. The preconditioning portion of the method comprises introducing a hydrogen gas into the CVD chamber, and then introducing a mixture of hydrogen gas and nitrogen gas into the chamber.

4. 发明授权

US5293516A Multiprobe apparatus 失效
标题翻译：多功能设备
公开(公告)号：US5293516A
公开(公告)日：1994-03-08
申请号：US828539
申请日：1992-01-28
申请人： Jean-Claude Fouere , Kyong-Min Kim , Pavel Smetana
发明人： Jean-Claude Fouere , Kyong-Min Kim , Pavel Smetana
IPC分类号： G01R1/073 , G01R1/04
CPC分类号： G01R1/073
摘要： A multiprobe apparatus for probing a device having a plurality of contacts includes a holder for holding the device in a fixed position; a plurality of electrically conducting elongated probes, each probe being adapted for electrical communication with a respective one of the contacts by tangential linear contact along the length of the probe; and a probe support for supporting the probes and for maintaining the probes in electrical communication with the contacts.
摘要翻译：用于探测具有多个触点的装置的多重探测装置包括用于将装置保持在固定位置的支架; 多个导电细长探针，每个探针适于沿着探针的长度通过切线线性接触与相应的一个触点电连通; 以及用于支撑探针并用于保持探针与触点电连通的探针支架。

5. 发明授权

US09016236B2 Method and apparatus for angular high density plasma chemical vapor deposition 有权
标题翻译：用于角高密度等离子体化学气相沉积的方法和装置
公开(公告)号：US09016236B2
公开(公告)日：2015-04-28
申请号：US12185339
申请日：2008-08-04
申请人： Daewon Yang , Kangguo Cheng , Pavel Smetana , Richard S. Wise , Keith Kwong Hon Wong
发明人： Daewon Yang , Kangguo Cheng , Pavel Smetana , Richard S. Wise , Keith Kwong Hon Wong
IPC分类号： H01L21/306 , C23C16/00 , C23C16/507 , C23C16/34 , C23C16/40 , C23C16/455 , C23C16/458 , C23C16/56 , H01J37/20 , H01J37/32 , H01L27/108 , H01L21/316 , H01L21/318
CPC分类号： C23C16/507 , C23C16/345 , C23C16/402 , C23C16/45578 , C23C16/4586 , C23C16/56 , H01J37/20 , H01J37/321 , H01J2237/20207 , H01J2237/3323 , H01L21/31608 , H01L21/3185 , H01L27/10867
摘要： A high-density plasma chemical vapor deposition tool and the method for use of the tool is disclosed. The chemical vapor deposition tool allows for angular adjustment of the pedestal that holds the substrate being manufactured. Electromagnets serve as an “electron filter” that allows for angular deposition of material onto the substrate. Methods for fabrication of trench structures and asymmetrical spacers in a semiconductor manufacturing process are also disclosed. The angular deposition saves process steps, thereby reducing time, complexity, and cost of manufacture, while improving overall product yield.
摘要翻译：公开了一种高密度等离子体化学气相沉积工具和该工具的使用方法。化学气相沉积工具允许对保持正在制造的衬底的基座进行角度调节。电磁铁用作允许将材料角度沉积到衬底上的“电子过滤器”。还公开了在半导体制造工艺中制造沟槽结构和不对称间隔物的方法。角度沉积节省了工艺步骤，从而降低了制造时间，复杂性和成本，同时提高了整体产品的产量。

6. 发明授权

US07489494B2 Guard wafer for semiconductor structure fabrication 有权
标题翻译：用于半导体结构制造的保护晶片
公开(公告)号：US07489494B2
公开(公告)日：2009-02-10
申请号：US12101231
申请日：2008-04-11
申请人： Scott M. Hargash , Pavel Smetana
发明人： Scott M. Hargash , Pavel Smetana
IPC分类号： H02N13/00
CPC分类号： C23C16/4581 , C23C16/4404 , H01L21/6831
摘要： An apparatus which allows tightly coupling of the device wafer to the electrostatic chuck of the process chamber after the process chamber is conditioned. The apparatus includes (a) a process chamber; (b) a chuck in the process chamber; (c) a guard wafer placed on and in direct physical contact with the chuck; and (d) a particle restraining layer on essentially all surfaces that are exposed to the ambient inside the process chamber. The particle restraining layer has a thickness in a first direction of at least 500 nm. The first direction is essentially perpendicular to an interfacing surface between the particle restraining layer and the chuck. The guard wafer comprises a material selected from the group consisting of a metal and a semiconductor oxide.
摘要翻译：在处理室被调节之后允许将器件晶片与处理室的静电卡盘紧密耦合的装置。该装置包括（a）处理室; （b）处理室中的卡盘; （c）放置在与卡盘直接物理接触的保护晶片; 和（d）在基本上所有表面上的暴露于处理室内的环境的颗粒抑制层。粒子限制层的厚度在第一方向上至少为500nm。第一方向基本上垂直于颗粒限制层和卡盘之间的界面表面。保护晶片包括选自金属和半导体氧化物的材料。

7. 发明申请

US20060221537A1 GUARD WAFER FOR SEMICONDUCTOR STRUCTURE FABRICATION 有权
标题翻译：用于半导体结构制造的保护膜
公开(公告)号：US20060221537A1
公开(公告)日：2006-10-05
申请号：US10907508
申请日：2005-04-04
申请人： Scott Hargash , Pavel Smetana
发明人： Scott Hargash , Pavel Smetana
IPC分类号： H01T23/00
CPC分类号： C23C16/4581 , C23C16/4404 , H01L21/6831
摘要： An apparatus (and method for operating the same) which allows tightly coupling the device wafer to the electrostatic chuck of the process chamber after the process chamber is conditioned. The method comprises (a) providing (i) a process chamber and (ii) an electrostatic chuck in the process chamber; (b) placing a guard wafer on the electrostatic chuck via a top surface of the electrostatic chuck; and (c) forming a particle restraining layer on essentially all surfaces that are exposed to the ambient inside the process chamber, wherein the particle restraining layer has a thickness in a first direction of at least 500 Å, wherein the first direction is essentially perpendicular to an interfacing surface between the particle restraining layer and an inner surface of the process chamber, and wherein the guard wafer comprises a material selected from the group consisting of a metal and a semiconductor oxide.
摘要翻译：一种用于操作该装置的装置（及其操作方法），其允许在处理室被调节之后将装置晶片紧密地耦合到处理室的静电卡盘。该方法包括（a）在处理室中提供（i）处理室和（ii）静电卡盘; （b）通过静电卡盘的顶表面将防护晶片放置在静电卡盘上; 并且（c）在基本上暴露于处理室内的环境的所有表面上形成颗粒抑制层，其中所述颗粒限制层具有至少在第一方向上的厚度，其中所述第一方向基本上垂直于颗粒限制层和处理室的内表面之间的接合表面，并且其中防护晶片包括选自金属和半导体氧化物的材料。

8. 发明授权

US4659423A Semiconductor crystal growth via variable melt rotation 失效
标题翻译：通过可变的熔体旋转进行半导体晶体生长
公开(公告)号：US4659423A
公开(公告)日：1987-04-21
申请号：US856872
申请日：1986-04-28
申请人： Kyong-Min Kim , Pavel Smetana , Wolfgang A. Westdorp
发明人： Kyong-Min Kim , Pavel Smetana , Wolfgang A. Westdorp
IPC分类号： C30B15/00 , C30B15/30 , H01L21/18 , H01L21/208 , C30B13/24 , C30B13/30 , C30B35/00
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1072
摘要： An improvement in the method and apparatus for growing a semiconductor crystal by the Czochralski technique comprising the steps of applying a rotating transverse magnetic field to molten semiconductor material held in a crucible during the seed crystal pulling and crystal formation step, to cause the molten material to rotate within the crucible, and simultaneously increasing the rotational velocity of the magnetic field during this crystal formation as a function of the length of the crystal pulled from said molten material to thereby vary the rotation rate of the molten material. These steps result in the uniform axial distribution of oxygen in the crystal.
摘要翻译：通过切克劳斯基技术生长半导体晶体的方法和装置的改进包括以下步骤：在籽晶拉晶和晶体形成步骤期间，将保持在坩埚中的熔融半导体材料施加旋转横向磁场，使熔融材料在坩埚内旋转，并且在该晶体形成期间同时增加磁场的旋转速度，作为从所述熔融材料拉出的晶体的长度的函数，从而改变熔融材料的旋转速率。这些步骤导致晶体中氧均匀的轴向分布。

9. 发明申请

US20120190203A1 METHOD AND APPARATUS FOR ANGULAR HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION 有权
标题翻译：用于高密度等离子体化学蒸气沉积的方法和装置
公开(公告)号：US20120190203A1
公开(公告)日：2012-07-26
申请号：US13434934
申请日：2012-03-30
申请人： Daewon Yang , Kangguo Cheng , Pavel Smetana , Richard S. Wise , Keith Kwong Hon Wong
发明人： Daewon Yang , Kangguo Cheng , Pavel Smetana , Richard S. Wise , Keith Kwong Hon Wong
IPC分类号： H01L21/311
CPC分类号： C23C16/507 , C23C16/345 , C23C16/402 , C23C16/45578 , C23C16/4586 , C23C16/56 , H01J37/20 , H01J37/321 , H01J2237/20207 , H01J2237/3323 , H01L21/31608 , H01L21/3185 , H01L27/10867
摘要： Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area of a third of the STI trenches; removing dielectric material from the third STI trench; forming a gate stack having a first portion located between the first and the second of the STI trenches and a second portion located over and extending into the third trench; and performing a source/drain implant of the same polarity as the second cell well, thereby forming a FET in the first cell well, and a capacitor in the second cell well. The second polarity may be opposite from the first polarity. An additional implant may reduce ESR in the second cell well.
摘要翻译：通过形成多个STI沟槽与FET结合形成浅沟槽电容器; 对于FET，在第一和第二STI沟槽之间注入具有第一极性的第一单元阱; 对于电容器，在第三个STI沟槽的区域中注入具有第二极性的第二单元阱; 从第三STI沟槽去除电介质材料; 形成具有位于所述STI沟槽的所述第一和第二STI沟槽之间的第一部分和位于所述第三沟槽中并延伸到所述第三沟槽中的第二部分的栅极堆叠; 并且执行与第二单元阱相同极性的源极/漏极注入，从而在第一单元阱中形成FET，以及在第二单元阱中形成电容器。第二极性可以与第一极性相反。额外的植入物可以减少第二细胞中的ESR。

10. 发明申请

US20080287558A1 Method of the Preparation of Vulcanization Mixtures by the De-Vulcanization of Waste Rubber 审中-公开
标题翻译：通过废橡胶脱硫制备硫化混合物的方法
公开(公告)号：US20080287558A1
公开(公告)日：2008-11-20
申请号：US12095219
申请日：2006-11-30
申请人： Vladimir Kubanek , Miroslav Durdak , Vladimir Caska , Pavel Smetana
发明人： Vladimir Kubanek , Miroslav Durdak , Vladimir Caska , Pavel Smetana
IPC分类号： C08J11/28
CPC分类号： C08J11/28 , C08J2321/00 , C08K5/43 , Y02W30/706 , C08L21/00
摘要： Waste rubber in the from of crumbs, mainly from automobile tires, but also from other used rubber products including waste rubber formed in the course of their manufacturing, is mixed in a kneader, calender, or extruder with a compound containing the chemical group —SO2—NH—. Subsequently, at temperatures up to 180° C. the rubber crumbs are de-vulcanized within 15-20 minutes, the de-vulcanization degree being controlled by the de-vulcanization agent concentration, and time and temperature of de-vulcanization. After the eventual addition of small amounts of extenders as oil, soot, raw rubber, inorganic filler and the vulcanization agent a vulcanization mixture is obtained that after pressing into the shape of the rubber product is subjected to a standard vulcanization process.
摘要翻译：主要来自汽车轮胎的面包屑中的废橡胶，还包括其制造过程中形成的废橡胶的其他二手橡胶制品，在捏合机，压延机或挤出机中与含有化学基团-SO的化合物-SO 2 -NH-。随后，在高达180℃的温度下，橡胶屑在15-20分钟内脱硫，脱硫度由脱硫剂浓度，脱硫时间和温度控制。在最终添加少量作为油，烟灰，生橡胶，无机填料和硫化剂的增量剂之后，获得硫化混合物，在将其压制成橡胶制品的形状进行标准硫化处理之后。

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