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1. 发明授权

US06707732B2 Method of quickly determining work line failure type 有权
标题翻译：快速确定工作线故障类型的方法
公开(公告)号：US06707732B2
公开(公告)日：2004-03-16
申请号：US10222320
申请日：2002-08-16
申请人： Wu-Der Yang
发明人： Wu-Der Yang
IPC分类号： G11C700
CPC分类号： G11C29/025 , G11C29/02 , G11C2029/5002
摘要： A method of determining word line failure types in a memory device. In the method of the present invention, a relational table of electric characteristic and defective word line failure types is formed. A defective word line is then activated. Next, a first voltage is applied to the defective word line and the electric characteristic of the defective word line is measured. Finally, the defective word line failure type is determined according to the measured electric characteristic of the defective word line and the relational table.
摘要翻译：确定存储器件中的字线故障类型的方法。在本发明的方法中，形成了电特性和缺陷字线故障类型的关系表。然后激活有缺陷的字线。接下来，对缺陷字线施加第一电压，并测量缺陷字线的电特性。最后，根据测得的缺陷字线和关系表的电特性来确定有缺陷的字线故障类型。

2. 发明授权

US07538410B2 Fuse structure window 有权
标题翻译：保险丝结构窗口
公开(公告)号：US07538410B2
公开(公告)日：2009-05-26
申请号：US11435349
申请日：2006-05-15
申请人： Wu-Der Yang
发明人： Wu-Der Yang
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a fuse structure. The fuse structure comprises a substrate, a plurality of conductive layers, a plurality of dielectric layers and a plurality of conductive plugs. The novel fuse structure includes a plurality of fuse units, and a new layout of the fuse units to increase the pitch between the fuse units, preventing the fuse structure from failing when misalignment of the laser beam and thermal scattering of the laser beam damage the second layer of the fuse structure in the laser blow process, thus increasing reliability and yield.
摘要翻译：本发明提供一种熔丝结构。熔丝结构包括衬底，多个导电层，多个电介质层和多个导电插塞。新颖的熔丝结构包括多个熔丝单元，以及熔丝单元的新布局以增加熔丝单元之间的间距，从而防止当激光束的不对准和激光束的热散射损坏第二个时，熔丝结构发生故障在激光吹制过程中保险丝结构层，从而提高可靠性和产量。

3. 发明申请

US20070023861A1 Fuse structure window 有权
标题翻译：保险丝结构窗口
公开(公告)号：US20070023861A1
公开(公告)日：2007-02-01
申请号：US11435349
申请日：2006-05-15
申请人： Wu-Der Yang
发明人： Wu-Der Yang
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a fuse structure. The fuse structure comprises a substrate, a plurality of conductive layers, a plurality of dielectric layers and a plurality of conductive plugs. The novel fuse structure includes a plurality of fuse units, and a new layout of the fuse units to increase the pitch between the fuse units, preventing the fuse structure from failing when misalignment of the laser beam and thermal scattering of the laser beam damage the second layer of the fuse structure in the laser blow process, thus increasing reliability and yield.
摘要翻译：本发明提供一种熔丝结构。熔丝结构包括衬底，多个导电层，多个电介质层和多个导电插塞。新颖的熔丝结构包括多个熔丝单元，以及熔丝单元的新布局以增加熔丝单元之间的间距，从而防止当激光束的不对准和激光束的热散射损坏第二个时，熔丝结构发生故障在激光吹制过程中保险丝结构层，从而提高可靠性和产量。

4. 发明授权

US06686645B1 Fuse and fuse window structure 有权
标题翻译：保险丝和保险丝窗口结构
公开(公告)号：US06686645B1
公开(公告)日：2004-02-03
申请号：US10283392
申请日：2002-10-29
申请人： Wu-Der Yang
发明人： Wu-Der Yang
IPC分类号： H01L2976
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A fuse structure. A first dielectric layer is formed on a substrate, a first conductive layer is formed on part of the first dielectric layer, a second dielectric layer is formed on part of the first dielectric layer and part of the first conductive layer, and a second conductive layer is formed on part of the second dielectric layer. A third dielectric layer is formed on part of the second conductive layer and part of the second dielectric layer, with an opening to expose part of the second conductive layer, to be defined as the laser spot position. A third conductive layer is formed on the third dielectric layer, with at least one conductive plug penetrating the second dielectric layer, to electrically connect the first conductive layer and the second conductive layer, to function as a fuse. Thus, in the present invention, the fuse structure of the third conductive layer can avoid damage to the adjacent fuse structure from the laser blow process.
摘要翻译：保险丝结构。第一电介质层形成在基板上，第一导电层形成在第一电介质层的一部分上，第二电介质层形成在第一电介质层的一部分和第一导电层的一部分上，第二导电层形成在第二电介质层的一部分上。在第二导电层的一部分和第二电介质层的一部分上形成第三电介质层，具有露出部分第二导电层的开口，被定义为激光光斑位置。第三导电层形成在第三电介质层上，至少一个导电插塞穿透第二电介质层，以电连接第一导电层和第二导电层，起到保险丝的作用。因此，在本发明中，第三导电层的熔丝结构可以避免从激光吹制过程中损坏相邻的熔丝结构。

5. 发明授权

US6115834A Method for quickly identifying floating cells by a bit-line coupling pattern (BLCP) 有权
标题翻译：通过位线耦合模式（BLCP）快速识别浮动单元的方法
公开(公告)号：US6115834A
公开(公告)日：2000-09-05
申请号：US146042
申请日：1998-09-02
申请人： Tean-Sen Jen , Shiou-Yu Wang , Wu-Der Yang , Chang-Pin Chen
发明人： Tean-Sen Jen , Shiou-Yu Wang , Wu-Der Yang , Chang-Pin Chen
IPC分类号： G11C29/10 , G11C29/00 , G11C7/00
CPC分类号： G11C29/10
摘要： A method for quickly identifying floating cells by a bit-line coupling pattern (BLCP), an electronic analysis method, identifies floating cells by inputting different background data and inducing net charges from adjacent bit-lines to the bit-lines corresponding to floating cells by coupling parasitic capacitors, wherein the floating results from open bit-line contacts and/or open DRAM cell contacts. Moreover, a method for identifying floating cells according to the invention has the advantages of high efficiency and low cost.
摘要翻译：一种通过电子分析方法通过位线耦合模式（BLCP）快速识别浮动单元的方法，通过输入不同的背景数据并通过相应于浮动单元的位线的相邻位线引起净电荷来识别浮动单元，耦合寄生电容器，其中来自开放位线触点和/或开放DRAM单元触点的浮动。此外，根据本发明的用于识别浮动细胞的方法具有效率高，成本低的优点。

6. 发明授权

US06858913B2 Fuse structure window 有权
标题翻译：保险丝结构窗口
公开(公告)号：US06858913B2
公开(公告)日：2005-02-22
申请号：US10426216
申请日：2003-04-30
申请人： Wu-Der Yang
发明人： Wu-Der Yang
IPC分类号： H01L23/525 , H01L29/00
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a fuse structure. The fuse structure comprises a substrate, a plurality of conductive layers, a plurality of dielectric layers and a plurality of conductive plugs. The novel fuse structure includes a plurality of fuse units, and a new layout of the fuse units to increase the pitch between the fuse units, preventing the fuse structure from failing when misalignment of the laser beam and thermal scattering of the laser beam damage the second layer of the fuse structure in the laser blow process, thus increasing reliability and yield.
摘要翻译：本发明提供一种熔丝结构。熔丝结构包括衬底，多个导电层，多个电介质层和多个导电插塞。新颖的熔丝结构包括多个熔丝单元，以及熔丝单元的新布局以增加熔丝单元之间的间距，从而防止当激光束的不对准和激光束的热散射损坏第二个时，熔丝结构发生故障在激光吹制过程中保险丝结构层，从而提高可靠性和产量。

7. 发明授权

US06826067B2 Double capacity stacked memory and fabrication method thereof 有权
标题翻译：双容量堆叠式存储器及其制造方法
公开(公告)号：US06826067B2
公开(公告)日：2004-11-30
申请号：US10424416
申请日：2003-04-28
申请人： Wu-Der Yang
发明人： Wu-Der Yang
IPC分类号： G11C502
CPC分类号： G11C5/02 , H01L2924/0002 , H01L2924/00
摘要： A double capacity stacked memory device. In the present invention, two memory chips each have a plurality of control terminals and address terminals, and two data input/output terminals. The control terminals and address terminals of the first memory chip are electrically coupled to those of the second memory chip correspondingly to serve as control terminals and address terminals of the stacked memory respectively, and the data input/output terminals of the two memory chips construct four data input/output terminals of the stacked memory, such that the stacked memory accesses data in the first and second memory chip simultaneously according to an access command, and is thus suitable for double capacity memory devices in a standard package.
摘要翻译：双层容量堆叠式存储器件。在本发明中，两个存储器芯片各自具有多个控制端子和地址端子以及两个数据输入/输出端子。第一存储器芯片的控制端子和地址端子分别与第二存储器芯片的控制端子和地址端子电耦合，分别对应地用作堆叠存储器的控制端子和地址端子，并且两个存储器芯片的数据输入/输出端子构成四个堆叠存储器的数据输入/输出端子，使得堆叠存储器根据访问命令同时访问第一和第二存储器芯片中的数据，因此适用于标准封装中的双倍容量存储器件。

8. 发明授权

US06750753B2 Fuse structure window 有权
标题翻译：保险丝结构窗口
公开(公告)号：US06750753B2
公开(公告)日：2004-06-15
申请号：US10385985
申请日：2003-03-10
申请人： Wu-Der Yang
发明人： Wu-Der Yang
IPC分类号： H01H85046
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a fuse structure. The fuse structure comprises a substrate, a plurality of conductive layers, a dielectric layer and a plurality of conductive plugs. The fuse structure includes a plurality of fuse units, with increased the pitch between the fuse units. This structure prevents the fuse structure from failing when both misalignment of the laser beam or thermal scattering of the laser beam damage the second layer of the fuse structure in the laser blow process, which raises reliability and yield.
摘要翻译：本发明提供一种熔丝结构。熔丝结构包括衬底，多个导电层，电介质层和多个导电插塞。熔丝结构包括多个保险丝单元，其中保险丝单元之间的间距增加。当激光束的两个不对准或激光束的热散射在激光吹制过程中损坏熔丝结构的第二层时，这种结构防止熔丝结构发生故障，这提高了可靠性和产量。

9. 发明授权

US06667535B2 Fuse structure 有权
标题翻译：保险丝结构
公开(公告)号：US06667535B2
公开(公告)日：2003-12-23
申请号：US10349731
申请日：2003-01-22
申请人： Wu-Der Yang
发明人： Wu-Der Yang
IPC分类号： H01L2900
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A novel fuse structure. An optimal position of laser spot is defined above a substrate. A first conductive layer is formed on part of the substrate. A first dielectric layer is formed on the substrate and the first conductive layer. A second conductive layer as formed on the first dielectric layer. A second dielectric layer is formed on the first dielectric layer and the second conductive layer. A third conductive layer comprising the position of laser spot is formed on part of the second dielectric layer. A plurality of first conductive plugs penetrate the first dielectric layer, to electrically connect the first conductive layer and the second conductive layer. At least one second conductive plug penetrates the second dielectric layer, to electrically connect the second conductive layer and the third conductive layer. Thus, the first conductive layer serves as a backup conductive layer when the second conductive layer is broken.
摘要翻译：一种新颖的保险丝结构。激光光斑的最佳位置定义在基底之上。在基板的一部分上形成第一导电层。在基板和第一导电层上形成第一电介质层。形成在第一介电层上的第二导电层。在第一电介质层和第二导电层上形成第二电介质层。包括激光光斑位置的第三导电层形成在第二电介质层的一部分上。多个第一导电插塞穿透第一介电层，以电连接第一导电层和第二导电层。至少一个第二导电插塞穿透第二电介质层，以电连接第二导电层和第三导电层。因此，当第二导电层破裂时，第一导电层用作备用导电层。

10. 发明授权

US08022523B2 Multi-chip stack package 有权
标题翻译：多芯片堆栈包
公开(公告)号：US08022523B2
公开(公告)日：2011-09-20
申请号：US12136055
申请日：2008-06-10
申请人： Jen-Chun Chen , Wu-Der Yang
发明人： Jen-Chun Chen , Wu-Der Yang
IPC分类号： H01L23/02
CPC分类号： H01L23/5385 , H01L21/563 , H01L23/49838 , H01L24/48 , H01L25/0657 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06572 , H01L2924/00014 , H01L2924/15184 , H01L2224/05599 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A multi-chip stack package comprising a first wiring substrate, a first chip, a second wiring substrate, and a second chip is provided. The first wiring substrate is with a front side and a rear side. The first chip is disposed on the front side of the first wiring substrate and electrically connected to the first wiring substrate and the first chip has a first active surface. The second wiring substrate is disposed on the first active surface of the first chip and electrically connected to the first wiring substrate. The second chip is disposed on the second wiring substrate and electrically connected to the second wiring layer. The second active surface of the second chip faces the first active surface of the first chip.
摘要翻译：提供了包括第一布线基板，第一芯片，第二布线基板和第二芯片的多芯片堆叠封装。第一布线基板具有前侧和后侧。第一芯片配置在第一布线基板的正面，与第一布线基板电连接，第一芯片具有第一有源面。第二布线基板设置在第一芯片的第一有源面上，与第一布线基板电连接。第二芯片设置在第二布线基板上并与第二布线层电连接。第二芯片的第二有源表面面向第一芯片的第一有源表面。

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